JPS55166937A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS55166937A
JPS55166937A JP7521879A JP7521879A JPS55166937A JP S55166937 A JPS55166937 A JP S55166937A JP 7521879 A JP7521879 A JP 7521879A JP 7521879 A JP7521879 A JP 7521879A JP S55166937 A JPS55166937 A JP S55166937A
Authority
JP
Japan
Prior art keywords
film
sio2
polycrystalline
layer
oxidation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7521879A
Other languages
Japanese (ja)
Inventor
Juro Yasui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP7521879A priority Critical patent/JPS55166937A/en
Publication of JPS55166937A publication Critical patent/JPS55166937A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To obtain a high tension resisting layer insulation film in the formation of a multilayer wiring construction forming the first insulation film, the first layer electrode, the second insulation film and a semiconductor film on a semiconductor substrate and then by oxidizing the remaining semiconductor film after the oxidation of the semiconductor film between electrodes has been removed. CONSTITUTION:A heat oxidation film 2, the first layer polycrystalline Si electrode 3, a CVD SiO2 film 4 and a polycrystalline Si film 5 are formed successively. Then a phosphor glass film 6 is formed on the region 7 of the Si film 5 located between Si electrodes 3, a heat treatment is given to the said film 6, and the Si film is changed to an SiO2 film 8 for the entire thickness on the region 7 and for the surface only on the other section. Then, after the SiO2 film 8 is removed by etching and a selective etching is given to the exposed SiO2 film 4 and the heat oxidation film 2, the surface of the substrate is changed to an oxidation film 97 and the remaining polycrystalline Si film 5 is changed to an SiO2 film 9 by heat treatment, on which the second layer polycrystalline Si electrode 10 is formed. The SiO2 film 9 is formed by giving a heat-treatment to the polycrystalline Si film and it is a high- tension withstanding inter-layer insulation film.
JP7521879A 1979-06-14 1979-06-14 Manufacture of semiconductor device Pending JPS55166937A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7521879A JPS55166937A (en) 1979-06-14 1979-06-14 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7521879A JPS55166937A (en) 1979-06-14 1979-06-14 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS55166937A true JPS55166937A (en) 1980-12-26

Family

ID=13569849

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7521879A Pending JPS55166937A (en) 1979-06-14 1979-06-14 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55166937A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6267838A (en) * 1985-09-20 1987-03-27 Toshiba Corp Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6267838A (en) * 1985-09-20 1987-03-27 Toshiba Corp Manufacture of semiconductor device

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