JPS55166937A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS55166937A JPS55166937A JP7521879A JP7521879A JPS55166937A JP S55166937 A JPS55166937 A JP S55166937A JP 7521879 A JP7521879 A JP 7521879A JP 7521879 A JP7521879 A JP 7521879A JP S55166937 A JPS55166937 A JP S55166937A
- Authority
- JP
- Japan
- Prior art keywords
- film
- sio2
- polycrystalline
- layer
- oxidation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To obtain a high tension resisting layer insulation film in the formation of a multilayer wiring construction forming the first insulation film, the first layer electrode, the second insulation film and a semiconductor film on a semiconductor substrate and then by oxidizing the remaining semiconductor film after the oxidation of the semiconductor film between electrodes has been removed. CONSTITUTION:A heat oxidation film 2, the first layer polycrystalline Si electrode 3, a CVD SiO2 film 4 and a polycrystalline Si film 5 are formed successively. Then a phosphor glass film 6 is formed on the region 7 of the Si film 5 located between Si electrodes 3, a heat treatment is given to the said film 6, and the Si film is changed to an SiO2 film 8 for the entire thickness on the region 7 and for the surface only on the other section. Then, after the SiO2 film 8 is removed by etching and a selective etching is given to the exposed SiO2 film 4 and the heat oxidation film 2, the surface of the substrate is changed to an oxidation film 97 and the remaining polycrystalline Si film 5 is changed to an SiO2 film 9 by heat treatment, on which the second layer polycrystalline Si electrode 10 is formed. The SiO2 film 9 is formed by giving a heat-treatment to the polycrystalline Si film and it is a high- tension withstanding inter-layer insulation film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7521879A JPS55166937A (en) | 1979-06-14 | 1979-06-14 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7521879A JPS55166937A (en) | 1979-06-14 | 1979-06-14 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55166937A true JPS55166937A (en) | 1980-12-26 |
Family
ID=13569849
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7521879A Pending JPS55166937A (en) | 1979-06-14 | 1979-06-14 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55166937A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6267838A (en) * | 1985-09-20 | 1987-03-27 | Toshiba Corp | Manufacture of semiconductor device |
-
1979
- 1979-06-14 JP JP7521879A patent/JPS55166937A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6267838A (en) * | 1985-09-20 | 1987-03-27 | Toshiba Corp | Manufacture of semiconductor device |
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