JPS6430252A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6430252A JPS6430252A JP18683687A JP18683687A JPS6430252A JP S6430252 A JPS6430252 A JP S6430252A JP 18683687 A JP18683687 A JP 18683687A JP 18683687 A JP18683687 A JP 18683687A JP S6430252 A JPS6430252 A JP S6430252A
- Authority
- JP
- Japan
- Prior art keywords
- accomplished
- thin film
- titanium
- titanium oxide
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000010409 thin film Substances 0.000 abstract 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract 3
- 239000010408 film Substances 0.000 abstract 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 abstract 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 238000000059 patterning Methods 0.000 abstract 2
- 238000000206 photolithography Methods 0.000 abstract 2
- 229910052719 titanium Inorganic materials 0.000 abstract 2
- 239000010936 titanium Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 238000000137 annealing Methods 0.000 abstract 1
- 239000003990 capacitor Substances 0.000 abstract 1
- 239000003989 dielectric material Substances 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To realize a high-capacity element built of a dielectric material without reducing the degree of integration by a method wherein a titanium oxide film high in dielectric constant is used. CONSTITUTION:For example on a silicon substrate 1, an impurity diffusion layer 2 is formed, an insulating film 3 which is for example an oxide film is formed, patterning is accomplished by photolithography and etching, and then a titanium thin film 10 is formed by spattering. Next, the titanium thin film 10 is converted into a titanium oxide thin film 11, which is accomplished by thermal oxidation or lamp annealing or oxidizing ion implantation. A process follows wherein the titanium oxide thin film 11 is subjected to patterning, which is accomplished by photolithography or the like. Etching is accomplished for the formation of a capacitor, which is followed by the use of spattering or the like for the formation of an aluminum wiring for the completion of a semiconductor device of this design.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18683687A JPS6430252A (en) | 1987-07-27 | 1987-07-27 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18683687A JPS6430252A (en) | 1987-07-27 | 1987-07-27 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6430252A true JPS6430252A (en) | 1989-02-01 |
Family
ID=16195479
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18683687A Pending JPS6430252A (en) | 1987-07-27 | 1987-07-27 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6430252A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5193800A (en) * | 1991-04-08 | 1993-03-16 | Seiko Epson Corporation | Apparatus for conveying paper in a printer |
| EP0720213A3 (en) * | 1994-12-28 | 1997-05-07 | Matsushita Electronics Corp | Capacitor for integrated circuit and its fabrication method |
| EP1628349A2 (en) * | 2004-08-19 | 2006-02-22 | Fujitsu Limited | Mis capacitor and production method of mis capacitor |
-
1987
- 1987-07-27 JP JP18683687A patent/JPS6430252A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5193800A (en) * | 1991-04-08 | 1993-03-16 | Seiko Epson Corporation | Apparatus for conveying paper in a printer |
| EP0720213A3 (en) * | 1994-12-28 | 1997-05-07 | Matsushita Electronics Corp | Capacitor for integrated circuit and its fabrication method |
| EP0971393A1 (en) * | 1994-12-28 | 2000-01-12 | Matsushita Electronics Corporation | Capacitor for integrated circuit and its fabrication method |
| EP1628349A2 (en) * | 2004-08-19 | 2006-02-22 | Fujitsu Limited | Mis capacitor and production method of mis capacitor |
| EP1628349A3 (en) * | 2004-08-19 | 2008-01-23 | Fujitsu Limited | Mis capacitor and production method of mis capacitor |
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