JPS6418261A - Multigate-type metal insulator semiconductor device - Google Patents
Multigate-type metal insulator semiconductor deviceInfo
- Publication number
- JPS6418261A JPS6418261A JP17515087A JP17515087A JPS6418261A JP S6418261 A JPS6418261 A JP S6418261A JP 17515087 A JP17515087 A JP 17515087A JP 17515087 A JP17515087 A JP 17515087A JP S6418261 A JPS6418261 A JP S6418261A
- Authority
- JP
- Japan
- Prior art keywords
- layer insulation
- films
- insulation films
- gate insulating
- film thicknesses
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To satisfy the requirement for incocsistent characteristics of the second gate electrodes and layer insulation films simultaneously by setting up separately film thicknesses of both layer insulation films and gate insulating films located at lower layers of the second gate electrodes. CONSTITUTION:Film thicknesses between layer insulation films 5 end the first gate electrodes 3 located at lower layers of the second gate electrodes 4 and those of the second gate insulating film 6 located at the second gate region of a semiconductor substrate 1 are separately established. In other words, respective film thicknesses of the layer insulation films end the second gate insulating films are individually controlled by forming individually the layer insulation films 5 and a part of the second gate insulating films 6 at least which have been formed so far simultaneously with the formation of the first gate electrodes 3. Then the film thicknesses of layer insulation films 5 are established to values that satisfy the requirement for the layer insulation films 5 without being restricted by the film thicknesses of the second gate insulating films 6. Thus the resultant set values satisfy the requirement for characteristics of the second gate insulating films and layer insulation films simultaneously.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17515087A JPS6418261A (en) | 1987-07-14 | 1987-07-14 | Multigate-type metal insulator semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17515087A JPS6418261A (en) | 1987-07-14 | 1987-07-14 | Multigate-type metal insulator semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6418261A true JPS6418261A (en) | 1989-01-23 |
Family
ID=15991146
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17515087A Pending JPS6418261A (en) | 1987-07-14 | 1987-07-14 | Multigate-type metal insulator semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6418261A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0705846A1 (en) | 1994-10-04 | 1996-04-10 | Immuno Ag | High molecular weight and low molecular weight fractions of von Willebrand factor |
| US6791156B2 (en) | 2001-10-26 | 2004-09-14 | Denso Corporation | Semiconductor device and method for manufacturing it |
-
1987
- 1987-07-14 JP JP17515087A patent/JPS6418261A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0705846A1 (en) | 1994-10-04 | 1996-04-10 | Immuno Ag | High molecular weight and low molecular weight fractions of von Willebrand factor |
| US6791156B2 (en) | 2001-10-26 | 2004-09-14 | Denso Corporation | Semiconductor device and method for manufacturing it |
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