JPS6437056A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6437056A
JPS6437056A JP62192945A JP19294587A JPS6437056A JP S6437056 A JPS6437056 A JP S6437056A JP 62192945 A JP62192945 A JP 62192945A JP 19294587 A JP19294587 A JP 19294587A JP S6437056 A JPS6437056 A JP S6437056A
Authority
JP
Japan
Prior art keywords
source
gate electrode
insulating film
drain electrode
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62192945A
Other languages
Japanese (ja)
Inventor
Koichi Kugimiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62192945A priority Critical patent/JPS6437056A/en
Publication of JPS6437056A publication Critical patent/JPS6437056A/en
Pending legal-status Critical Current

Links

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  • Electrodes Of Semiconductors (AREA)
  • Containers, Films, And Cooling For Superconductive Devices (AREA)

Abstract

PURPOSE:To make resistance low and improve heat resistant property so as to prevent a abnormal phenomenon such as a contact resistance, a spike or the like from generating by a method wherein a gate electrode and a source and a drain electrode formed of superconductor are formed on a semiconductor substrate through the intermediary of a thin insulation film which is formed concurrently and a thick insulating film is provided between the gate electrode and the source and the drain electrode. CONSTITUTION:A gate electrode 15 and a source and a drain electrode formed of a superconductor 13 are formed on a substrate through the intermediary of a thin insulating film 11 which is uniform in thickness and formed concurrently and the gate electrode 15 is isolated from the source and drain electrode 13 by means of a thick insulating film 14. By these processes, a drain and a source electrode material are zero in resistance, wherefore the loss due to resistance is prevented, and a gate electrode and a source and a drain electrode are rid of the interference between them as a thick insulating film is interposed between them, and thus a defective contact such as a spike or the like is prevented.
JP62192945A 1987-07-31 1987-07-31 Semiconductor device Pending JPS6437056A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62192945A JPS6437056A (en) 1987-07-31 1987-07-31 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62192945A JPS6437056A (en) 1987-07-31 1987-07-31 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6437056A true JPS6437056A (en) 1989-02-07

Family

ID=16299624

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62192945A Pending JPS6437056A (en) 1987-07-31 1987-07-31 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6437056A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6474758A (en) * 1987-09-17 1989-03-20 Fujitsu Ltd Insulated gate field-effect transistor
US6774463B1 (en) * 1990-02-01 2004-08-10 International Business Machines Corporation Superconductor gate semiconductor channel field effect transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6474758A (en) * 1987-09-17 1989-03-20 Fujitsu Ltd Insulated gate field-effect transistor
US6774463B1 (en) * 1990-02-01 2004-08-10 International Business Machines Corporation Superconductor gate semiconductor channel field effect transistor

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