JPS6437056A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6437056A JPS6437056A JP62192945A JP19294587A JPS6437056A JP S6437056 A JPS6437056 A JP S6437056A JP 62192945 A JP62192945 A JP 62192945A JP 19294587 A JP19294587 A JP 19294587A JP S6437056 A JPS6437056 A JP S6437056A
- Authority
- JP
- Japan
- Prior art keywords
- source
- gate electrode
- insulating film
- drain electrode
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Containers, Films, And Cooling For Superconductive Devices (AREA)
Abstract
PURPOSE:To make resistance low and improve heat resistant property so as to prevent a abnormal phenomenon such as a contact resistance, a spike or the like from generating by a method wherein a gate electrode and a source and a drain electrode formed of superconductor are formed on a semiconductor substrate through the intermediary of a thin insulation film which is formed concurrently and a thick insulating film is provided between the gate electrode and the source and the drain electrode. CONSTITUTION:A gate electrode 15 and a source and a drain electrode formed of a superconductor 13 are formed on a substrate through the intermediary of a thin insulating film 11 which is uniform in thickness and formed concurrently and the gate electrode 15 is isolated from the source and drain electrode 13 by means of a thick insulating film 14. By these processes, a drain and a source electrode material are zero in resistance, wherefore the loss due to resistance is prevented, and a gate electrode and a source and a drain electrode are rid of the interference between them as a thick insulating film is interposed between them, and thus a defective contact such as a spike or the like is prevented.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62192945A JPS6437056A (en) | 1987-07-31 | 1987-07-31 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62192945A JPS6437056A (en) | 1987-07-31 | 1987-07-31 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6437056A true JPS6437056A (en) | 1989-02-07 |
Family
ID=16299624
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62192945A Pending JPS6437056A (en) | 1987-07-31 | 1987-07-31 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6437056A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6474758A (en) * | 1987-09-17 | 1989-03-20 | Fujitsu Ltd | Insulated gate field-effect transistor |
US6774463B1 (en) * | 1990-02-01 | 2004-08-10 | International Business Machines Corporation | Superconductor gate semiconductor channel field effect transistor |
-
1987
- 1987-07-31 JP JP62192945A patent/JPS6437056A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6474758A (en) * | 1987-09-17 | 1989-03-20 | Fujitsu Ltd | Insulated gate field-effect transistor |
US6774463B1 (en) * | 1990-02-01 | 2004-08-10 | International Business Machines Corporation | Superconductor gate semiconductor channel field effect transistor |
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