JPS55154781A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS55154781A JPS55154781A JP6281179A JP6281179A JPS55154781A JP S55154781 A JPS55154781 A JP S55154781A JP 6281179 A JP6281179 A JP 6281179A JP 6281179 A JP6281179 A JP 6281179A JP S55154781 A JPS55154781 A JP S55154781A
- Authority
- JP
- Japan
- Prior art keywords
- hydrogen
- halogen elements
- substrate made
- conversion efficiency
- light irradiating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 239000000758 substrate Substances 0.000 abstract 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 3
- 229910052736 halogen Inorganic materials 0.000 abstract 3
- 150000002367 halogens Chemical class 0.000 abstract 3
- 229910052739 hydrogen Inorganic materials 0.000 abstract 3
- 239000001257 hydrogen Substances 0.000 abstract 3
- 238000006243 chemical reaction Methods 0.000 abstract 2
- 230000001678 irradiating effect Effects 0.000 abstract 2
- 239000010410 layer Substances 0.000 abstract 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract 2
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 abstract 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 229910003465 moissanite Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910001220 stainless steel Inorganic materials 0.000 abstract 1
- 239000010935 stainless steel Substances 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
- 229910052718 tin Inorganic materials 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
- 239000010936 titanium Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
PURPOSE:To enable provision of a photoelectric converter having high conversion efficiency by locally incorporating hydrogen or halogen elements in nonmonocrystalline semiconductor formed on a substrate. CONSTITUTION:A nonmonocrystalline semiconductor layer made of Si, SiC, Ge, Sn or the like is coated on a conductive substrate made of stainless steel, titanium or the like, a semiconductor substrate made of silicon, silicon carbide, germanium or the like or an insulating substrate made of alumina, glass or the like. Then, hydrogen or halogen elements are mixed with the light irradiating side, heat energy is selectively applied, or ultraviolet ray or the like is irradiated thereto to locally retain the hydrogen or halogen elements. Or, they are uniformly added in parallel with the surface of light irradiating side, or so added at a density gradient as to become high density in the surface layer and lower density as becoming deeper. In this manner, energy gap in the semiconductor layer is provided to enhance the photoelectric conversion efficiency.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6281179A JPS55154781A (en) | 1979-05-22 | 1979-05-22 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6281179A JPS55154781A (en) | 1979-05-22 | 1979-05-22 | Semiconductor device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59077239A Division JPS6057617A (en) | 1984-04-16 | 1984-04-16 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55154781A true JPS55154781A (en) | 1980-12-02 |
Family
ID=13211088
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6281179A Pending JPS55154781A (en) | 1979-05-22 | 1979-05-22 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55154781A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5742985U (en) * | 1980-12-19 | 1982-03-09 | ||
| JPS57100771A (en) * | 1980-12-15 | 1982-06-23 | Seiko Epson Corp | Switching element |
| JPS57139972A (en) * | 1981-02-13 | 1982-08-30 | Rca Corp | Method of producing amorphous silicon solar battery |
| JPS57159070A (en) * | 1981-03-26 | 1982-10-01 | Sumitomo Electric Ind Ltd | Manufacture of photo electromotive force element |
| JPS5853865A (en) * | 1981-09-28 | 1983-03-30 | Komatsu Denshi Kinzoku Kk | Preparation of amorphous silicon solar battery |
| JPS5856415A (en) * | 1981-09-30 | 1983-04-04 | Semiconductor Energy Lab Co Ltd | Plasma vapor growth method |
| JPS5892217A (en) * | 1981-11-28 | 1983-06-01 | Semiconductor Energy Lab Co Ltd | Manufacture of semiconductor device |
| JPS61295565A (en) * | 1985-06-25 | 1986-12-26 | Toshiba Corp | Photoconductive member |
| JPS61295570A (en) * | 1985-06-25 | 1986-12-26 | Toshiba Corp | Photoconductive member |
| US6927417B2 (en) | 2001-11-13 | 2005-08-09 | Toyota Jidosha Kabushiki Kaisha | Photoelectric conversion element and method of manufacturing the same |
-
1979
- 1979-05-22 JP JP6281179A patent/JPS55154781A/en active Pending
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57100771A (en) * | 1980-12-15 | 1982-06-23 | Seiko Epson Corp | Switching element |
| JPS5742985U (en) * | 1980-12-19 | 1982-03-09 | ||
| JPS57139972A (en) * | 1981-02-13 | 1982-08-30 | Rca Corp | Method of producing amorphous silicon solar battery |
| JPH0359588B2 (en) * | 1981-02-13 | 1991-09-11 | Rca Corp | |
| JPS6334632B2 (en) * | 1981-03-26 | 1988-07-11 | Sumitomo Electric Industries | |
| JPS57159070A (en) * | 1981-03-26 | 1982-10-01 | Sumitomo Electric Ind Ltd | Manufacture of photo electromotive force element |
| JPS5853865A (en) * | 1981-09-28 | 1983-03-30 | Komatsu Denshi Kinzoku Kk | Preparation of amorphous silicon solar battery |
| JPS5856415A (en) * | 1981-09-30 | 1983-04-04 | Semiconductor Energy Lab Co Ltd | Plasma vapor growth method |
| JPS5892217A (en) * | 1981-11-28 | 1983-06-01 | Semiconductor Energy Lab Co Ltd | Manufacture of semiconductor device |
| JPH0341978B2 (en) * | 1981-11-28 | 1991-06-25 | ||
| JPS61295565A (en) * | 1985-06-25 | 1986-12-26 | Toshiba Corp | Photoconductive member |
| JPS61295570A (en) * | 1985-06-25 | 1986-12-26 | Toshiba Corp | Photoconductive member |
| JPH0715587B2 (en) * | 1985-06-25 | 1995-02-22 | 株式会社東芝 | Photoconductive member |
| US6927417B2 (en) | 2001-11-13 | 2005-08-09 | Toyota Jidosha Kabushiki Kaisha | Photoelectric conversion element and method of manufacturing the same |
| US7368797B2 (en) | 2001-11-13 | 2008-05-06 | Toyota Jidosha Kabushiki Kaisha | Photoelectric conversion element and method of manufacturing the same |
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