JPS57160175A - Photoelectric converter - Google Patents

Photoelectric converter

Info

Publication number
JPS57160175A
JPS57160175A JP56045888A JP4588881A JPS57160175A JP S57160175 A JPS57160175 A JP S57160175A JP 56045888 A JP56045888 A JP 56045888A JP 4588881 A JP4588881 A JP 4588881A JP S57160175 A JPS57160175 A JP S57160175A
Authority
JP
Japan
Prior art keywords
type semiconductor
photoelectric converter
exothermicity
enlarging
infrared rays
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56045888A
Other languages
Japanese (ja)
Other versions
JPS6230714B2 (en
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HANDOUTAI ENERUGII KENKYUSHO KK
Semiconductor Energy Laboratory Co Ltd
Original Assignee
HANDOUTAI ENERUGII KENKYUSHO KK
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HANDOUTAI ENERUGII KENKYUSHO KK, Semiconductor Energy Laboratory Co Ltd filed Critical HANDOUTAI ENERUGII KENKYUSHO KK
Priority to JP56045888A priority Critical patent/JPS57160175A/en
Publication of JPS57160175A publication Critical patent/JPS57160175A/en
Publication of JPS6230714B2 publication Critical patent/JPS6230714B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To transmit infrared rays to prevent self-exothermicity by enlarging the energy band width of a P type and an N type semiconductor layers larger than that of an I type semiconductor layer in a photoelectric converter having a PIN structure. CONSTITUTION:A photoelectric converter is constituted of a phototransmitting substrate 15, photo-transmitting electrodes 16, 19, an I type semiconductor layer 20, P type semiconductor 22 on the side of luminous irradiation and an N type semiconductor 23 on the back side thereof. By enlarging the energy band widths of the layers 22, 23 larger than that of the layer 20, infrared rays can be permeated without absorption thereof thereby realizing no self-exothermicity.
JP56045888A 1981-03-28 1981-03-28 Photoelectric converter Granted JPS57160175A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56045888A JPS57160175A (en) 1981-03-28 1981-03-28 Photoelectric converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56045888A JPS57160175A (en) 1981-03-28 1981-03-28 Photoelectric converter

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP56152617A Division JPS57160176A (en) 1981-09-26 1981-09-26 Photoelectric converter
JP2245100A Division JPH03227575A (en) 1990-09-14 1990-09-14 Photoelectric conversion device

Publications (2)

Publication Number Publication Date
JPS57160175A true JPS57160175A (en) 1982-10-02
JPS6230714B2 JPS6230714B2 (en) 1987-07-03

Family

ID=12731773

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56045888A Granted JPS57160175A (en) 1981-03-28 1981-03-28 Photoelectric converter

Country Status (1)

Country Link
JP (1) JPS57160175A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59154079A (en) * 1983-02-22 1984-09-03 Semiconductor Energy Lab Co Ltd Photoelectric conversion semiconductor device
JPS59155974A (en) * 1983-02-25 1984-09-05 Semiconductor Energy Lab Co Ltd Manufacture of photoelectric converter
JPS6030180A (en) * 1983-07-28 1985-02-15 Matsushita Electric Ind Co Ltd Amorphous thin film photovoltaic element
JPS60250681A (en) * 1984-05-14 1985-12-11 エナージー・コンバーシヨン・デバイセス・インコーポレーテツド Random multilayer semiconductor structure
JPS62106670A (en) * 1985-11-05 1987-05-18 Kanegafuchi Chem Ind Co Ltd Semiconductor device
JPS62165374A (en) * 1986-01-16 1987-07-21 Sumitomo Electric Ind Ltd Amorphous photovoltaic element
JPS62232173A (en) * 1986-04-01 1987-10-12 Toa Nenryo Kogyo Kk Amorphous silicon solar cell
JPS6313380A (en) * 1986-07-04 1988-01-20 Hitachi Ltd Amorphous silicon solar cell
JPS63143877A (en) * 1986-12-08 1988-06-16 Hitachi Ltd Amorphous solar cell
JPH04211179A (en) * 1991-03-27 1992-08-03 Kanegafuchi Chem Ind Co Ltd Switching element
JP2009158667A (en) * 2007-12-26 2009-07-16 Mitsubishi Heavy Ind Ltd Photoelectric converter and method of producing the same
JP2010118695A (en) * 2010-02-22 2010-05-27 Mitsubishi Heavy Ind Ltd Photoelectric conversion apparatus, and method of manufacturing the same

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5136086A (en) * 1974-09-20 1976-03-26 Sharp Kk
US4064521A (en) * 1975-07-28 1977-12-20 Rca Corporation Semiconductor device having a body of amorphous silicon
US4109271A (en) * 1977-05-27 1978-08-22 Rca Corporation Amorphous silicon-amorphous silicon carbide photovoltaic device
US4166919A (en) * 1978-09-25 1979-09-04 Rca Corporation Amorphous silicon solar cell allowing infrared transmission
JPS57126175A (en) * 1981-01-29 1982-08-05 Kanegafuchi Chem Ind Co Ltd Amorphous silicon carbide/amorophous silicon hetero junction optoelectric element
JPS57136377A (en) * 1981-02-17 1982-08-23 Kanegafuchi Chem Ind Co Ltd Amorphous silicon nitride/amorphous silicon heterojunction photoelectric element
JPS6148276A (en) * 1984-08-16 1986-03-08 Ricoh Co Ltd Color correction circuit

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5136086A (en) * 1974-09-20 1976-03-26 Sharp Kk
US4064521A (en) * 1975-07-28 1977-12-20 Rca Corporation Semiconductor device having a body of amorphous silicon
US4109271A (en) * 1977-05-27 1978-08-22 Rca Corporation Amorphous silicon-amorphous silicon carbide photovoltaic device
US4166919A (en) * 1978-09-25 1979-09-04 Rca Corporation Amorphous silicon solar cell allowing infrared transmission
JPS57126175A (en) * 1981-01-29 1982-08-05 Kanegafuchi Chem Ind Co Ltd Amorphous silicon carbide/amorophous silicon hetero junction optoelectric element
JPS57136377A (en) * 1981-02-17 1982-08-23 Kanegafuchi Chem Ind Co Ltd Amorphous silicon nitride/amorphous silicon heterojunction photoelectric element
JPS6148276A (en) * 1984-08-16 1986-03-08 Ricoh Co Ltd Color correction circuit

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0570311B2 (en) * 1983-02-22 1993-10-04 Handotai Energy Kenkyusho
JPS59154079A (en) * 1983-02-22 1984-09-03 Semiconductor Energy Lab Co Ltd Photoelectric conversion semiconductor device
JPS59155974A (en) * 1983-02-25 1984-09-05 Semiconductor Energy Lab Co Ltd Manufacture of photoelectric converter
JPS6030180A (en) * 1983-07-28 1985-02-15 Matsushita Electric Ind Co Ltd Amorphous thin film photovoltaic element
JPS60250681A (en) * 1984-05-14 1985-12-11 エナージー・コンバーシヨン・デバイセス・インコーポレーテツド Random multilayer semiconductor structure
JPS62106670A (en) * 1985-11-05 1987-05-18 Kanegafuchi Chem Ind Co Ltd Semiconductor device
JPS62165374A (en) * 1986-01-16 1987-07-21 Sumitomo Electric Ind Ltd Amorphous photovoltaic element
JPS62232173A (en) * 1986-04-01 1987-10-12 Toa Nenryo Kogyo Kk Amorphous silicon solar cell
JPS6313380A (en) * 1986-07-04 1988-01-20 Hitachi Ltd Amorphous silicon solar cell
JPS63143877A (en) * 1986-12-08 1988-06-16 Hitachi Ltd Amorphous solar cell
JPH04211179A (en) * 1991-03-27 1992-08-03 Kanegafuchi Chem Ind Co Ltd Switching element
JP2009158667A (en) * 2007-12-26 2009-07-16 Mitsubishi Heavy Ind Ltd Photoelectric converter and method of producing the same
JP2010118695A (en) * 2010-02-22 2010-05-27 Mitsubishi Heavy Ind Ltd Photoelectric conversion apparatus, and method of manufacturing the same

Also Published As

Publication number Publication date
JPS6230714B2 (en) 1987-07-03

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