JPS5788767A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS5788767A JPS5788767A JP16454280A JP16454280A JPS5788767A JP S5788767 A JPS5788767 A JP S5788767A JP 16454280 A JP16454280 A JP 16454280A JP 16454280 A JP16454280 A JP 16454280A JP S5788767 A JPS5788767 A JP S5788767A
- Authority
- JP
- Japan
- Prior art keywords
- type
- ion implantation
- diode
- selectively
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 238000005468 ion implantation Methods 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 238000010438 heat treatment Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To fix breakdown voltage of a protection diode between a base and collector of a semiconductor device by a method wherein a semiconductor being introduced with impurities by neutron irradiation or a high resistance layer formed epitaxially is used for a substrate. CONSTITUTION:The n<-> type Si substrate 1 unified by neutron irradiation is prepared, an n<+> type layer 2 is provided on the side face thereof, and P ion implantation and heat treatment are performed on the main face using an SiO2 mask 3 to form an n<+> type layer 4'. The SiO2 mask 3 is removed selectively, and p type layers 5 and an n type layer 4'' are formed by B ion implantation and heat treatment. Openings are formed selectively in the SiO2 mask 3 again, B ion implantation and diffusion in an oxidizing atmosphere are performed to form p<+> type layers 6, and the Zener diode is constituted by the layers 4'', 6. P ions are made to be diffused selectively in the p<+> type layers 6, n<+> type emitters 7 are adhered thereto, the upper face thereof is covered with PSG20, and openings for electrodes are formed selectively. Thereafter electrodes are attached according to the prescribed way. By this constitution, junction of diode is placed at the prescribed depth by the ion implantation method, and concentration at the neighborhood of junction is uniform. Because no unevenness of concentration exists in the n<-> type substrate, extention of the depletion layer of diode junction is fixed always.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16454280A JPS5788767A (en) | 1980-11-25 | 1980-11-25 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16454280A JPS5788767A (en) | 1980-11-25 | 1980-11-25 | Semiconductor device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5788767A true JPS5788767A (en) | 1982-06-02 |
Family
ID=15795132
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16454280A Pending JPS5788767A (en) | 1980-11-25 | 1980-11-25 | Semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5788767A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5914670A (en) * | 1982-07-16 | 1984-01-25 | Nec Corp | Transistor |
| JPH05326399A (en) * | 1992-05-15 | 1993-12-10 | Rohm Co Ltd | Manufacture of soi substrate |
| CN102915967A (en) * | 2012-10-11 | 2013-02-06 | 杭州杭鑫电子工业有限公司 | Method for compatible integrated manufacture of silicon crystal diodes and triodes |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5559767A (en) * | 1978-10-30 | 1980-05-06 | Hitachi Ltd | Semiconductor device, method of fabricating the same and application thereof |
-
1980
- 1980-11-25 JP JP16454280A patent/JPS5788767A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5559767A (en) * | 1978-10-30 | 1980-05-06 | Hitachi Ltd | Semiconductor device, method of fabricating the same and application thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5914670A (en) * | 1982-07-16 | 1984-01-25 | Nec Corp | Transistor |
| JPH05326399A (en) * | 1992-05-15 | 1993-12-10 | Rohm Co Ltd | Manufacture of soi substrate |
| CN102915967A (en) * | 2012-10-11 | 2013-02-06 | 杭州杭鑫电子工业有限公司 | Method for compatible integrated manufacture of silicon crystal diodes and triodes |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6449273A (en) | Semiconductor device and its manufacture | |
| JPS5788767A (en) | Semiconductor device and manufacture thereof | |
| JPS56138920A (en) | Method of selection and diffusion for impurities | |
| JPS55127061A (en) | Manufacture of semiconductor memory | |
| GB1068248A (en) | Semiconductor devices | |
| JPS55127064A (en) | Semiconductor device | |
| JPS5788772A (en) | Vertical mis semiconductor device | |
| JPS5710969A (en) | Semiconductor device and manufacture thereof | |
| JPS5788769A (en) | Semiconductor device | |
| JPS55107229A (en) | Method of manufacturing semiconductor device | |
| JPS54104785A (en) | P-wel and its forming method | |
| JPS5649575A (en) | Junction type field effect semiconductor | |
| JPS55165673A (en) | Semiconductor device | |
| JPS54154271A (en) | Manufacture of semiconductor device | |
| JPS57202773A (en) | Silicon integrated circuit device | |
| JPS6436075A (en) | Semiconductor device and manufacture thereof | |
| JPS5685858A (en) | Semiconductor device | |
| JPS5650560A (en) | Manufacture of semiconductor device | |
| JPS57132357A (en) | Manufacture of semiconductor element | |
| JPS57192083A (en) | Semiconductor device | |
| JPS57162460A (en) | Manufacture of semiconductor device | |
| JPS5587446A (en) | Manufacture of semiconductor device | |
| JPS5685852A (en) | Manufacture of bipolar type integrated circuit | |
| JPS5544741A (en) | Manufacture of semiconductor device | |
| JPS56134762A (en) | Manufacturing of bipolar semiconductor device |