JPS54106169A - Vapor epitaxial growth device - Google Patents
Vapor epitaxial growth deviceInfo
- Publication number
- JPS54106169A JPS54106169A JP1384278A JP1384278A JPS54106169A JP S54106169 A JPS54106169 A JP S54106169A JP 1384278 A JP1384278 A JP 1384278A JP 1384278 A JP1384278 A JP 1384278A JP S54106169 A JPS54106169 A JP S54106169A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- layer
- boat
- reaction tube
- epitaxial growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To secure the sudden change of the impurity density without lowering the crystalline performance of the transit region of each layer when the different conducting multiple layers are formed by the epitxial growing method.
CONSTITUTION: N+GaAs substrate 3 is put on holder 2 and then set to reaction tube 1, and then the N-layer is formed on the substrate with operation of valves 11W13 and via H2 saturated with AsCl3 plus the N-type GaAs source in boat 5. Then rotor 4 containing the boat is turned 180° with axle 9 to connect the substrate to gas introduction mouth 8 of boat 6 in the P-type GaAs source in order to form the P-epitaxial layer. With this method, the substrate has not to be taken out of the reaction tube in the course of the process with no contamination given to the substrate at all. Thus, the crystalline property is enhanced for the transit region from the N-layer to the P-layer.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1384278A JPS54106169A (en) | 1978-02-08 | 1978-02-08 | Vapor epitaxial growth device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1384278A JPS54106169A (en) | 1978-02-08 | 1978-02-08 | Vapor epitaxial growth device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54106169A true JPS54106169A (en) | 1979-08-20 |
Family
ID=11844521
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1384278A Pending JPS54106169A (en) | 1978-02-08 | 1978-02-08 | Vapor epitaxial growth device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54106169A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5710921A (en) * | 1980-06-23 | 1982-01-20 | Mitsubishi Electric Corp | Gas phase epitaxial growth device |
US5599389A (en) * | 1990-02-14 | 1997-02-04 | Kabushiki Kaisha Toshiba | Compound semiconductor and method of manufacturing the same |
-
1978
- 1978-02-08 JP JP1384278A patent/JPS54106169A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5710921A (en) * | 1980-06-23 | 1982-01-20 | Mitsubishi Electric Corp | Gas phase epitaxial growth device |
US5599389A (en) * | 1990-02-14 | 1997-02-04 | Kabushiki Kaisha Toshiba | Compound semiconductor and method of manufacturing the same |
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