JPS54106169A - Vapor epitaxial growth device - Google Patents

Vapor epitaxial growth device

Info

Publication number
JPS54106169A
JPS54106169A JP1384278A JP1384278A JPS54106169A JP S54106169 A JPS54106169 A JP S54106169A JP 1384278 A JP1384278 A JP 1384278A JP 1384278 A JP1384278 A JP 1384278A JP S54106169 A JPS54106169 A JP S54106169A
Authority
JP
Japan
Prior art keywords
substrate
layer
boat
reaction tube
epitaxial growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1384278A
Other languages
Japanese (ja)
Inventor
Takaaki Muneta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1384278A priority Critical patent/JPS54106169A/en
Publication of JPS54106169A publication Critical patent/JPS54106169A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To secure the sudden change of the impurity density without lowering the crystalline performance of the transit region of each layer when the different conducting multiple layers are formed by the epitxial growing method.
CONSTITUTION: N+GaAs substrate 3 is put on holder 2 and then set to reaction tube 1, and then the N-layer is formed on the substrate with operation of valves 11W13 and via H2 saturated with AsCl3 plus the N-type GaAs source in boat 5. Then rotor 4 containing the boat is turned 180° with axle 9 to connect the substrate to gas introduction mouth 8 of boat 6 in the P-type GaAs source in order to form the P-epitaxial layer. With this method, the substrate has not to be taken out of the reaction tube in the course of the process with no contamination given to the substrate at all. Thus, the crystalline property is enhanced for the transit region from the N-layer to the P-layer.
COPYRIGHT: (C)1979,JPO&Japio
JP1384278A 1978-02-08 1978-02-08 Vapor epitaxial growth device Pending JPS54106169A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1384278A JPS54106169A (en) 1978-02-08 1978-02-08 Vapor epitaxial growth device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1384278A JPS54106169A (en) 1978-02-08 1978-02-08 Vapor epitaxial growth device

Publications (1)

Publication Number Publication Date
JPS54106169A true JPS54106169A (en) 1979-08-20

Family

ID=11844521

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1384278A Pending JPS54106169A (en) 1978-02-08 1978-02-08 Vapor epitaxial growth device

Country Status (1)

Country Link
JP (1) JPS54106169A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5710921A (en) * 1980-06-23 1982-01-20 Mitsubishi Electric Corp Gas phase epitaxial growth device
US5599389A (en) * 1990-02-14 1997-02-04 Kabushiki Kaisha Toshiba Compound semiconductor and method of manufacturing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5710921A (en) * 1980-06-23 1982-01-20 Mitsubishi Electric Corp Gas phase epitaxial growth device
US5599389A (en) * 1990-02-14 1997-02-04 Kabushiki Kaisha Toshiba Compound semiconductor and method of manufacturing the same

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