JPS5421165A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5421165A JPS5421165A JP8652477A JP8652477A JPS5421165A JP S5421165 A JPS5421165 A JP S5421165A JP 8652477 A JP8652477 A JP 8652477A JP 8652477 A JP8652477 A JP 8652477A JP S5421165 A JPS5421165 A JP S5421165A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- wiring
- provding
- bump
- absorb
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05124—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/05666—Titanium [Ti] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/05681—Tantalum [Ta] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/05684—Tungsten [W] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13005—Structure
- H01L2224/13007—Bump connector smaller than the underlying bonding area, e.g. than the under bump metallisation [UBM]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/81801—Soldering or alloying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01022—Titanium [Ti]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01024—Chromium [Cr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01042—Molybdenum [Mo]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01073—Tantalum [Ta]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Wire Bonding (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8652477A JPS5421165A (en) | 1977-07-18 | 1977-07-18 | Semiconductor device |
US05/925,324 US4263606A (en) | 1977-07-18 | 1978-07-17 | Low stress semiconductor device lead connection |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8652477A JPS5421165A (en) | 1977-07-18 | 1977-07-18 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5421165A true JPS5421165A (en) | 1979-02-17 |
JPS6149819B2 JPS6149819B2 (ja) | 1986-10-31 |
Family
ID=13889366
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8652477A Granted JPS5421165A (en) | 1977-07-18 | 1977-07-18 | Semiconductor device |
Country Status (2)
Country | Link |
---|---|
US (1) | US4263606A (ja) |
JP (1) | JPS5421165A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5628852A (en) * | 1991-07-26 | 1997-05-13 | Nec Corporation | Method for manufacturing a polyimide multilayer wiring substrate |
Families Citing this family (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5552639A (en) * | 1980-09-01 | 1996-09-03 | Hitachi, Ltd. | Resin molded type semiconductor device having a conductor film |
JPS5745259A (en) * | 1980-09-01 | 1982-03-15 | Hitachi Ltd | Resin sealing type semiconductor device |
US5371411A (en) * | 1980-09-01 | 1994-12-06 | Hitachi, Ltd. | Resin molded type semiconductor device having a conductor film |
US4514751A (en) * | 1982-12-23 | 1985-04-30 | International Business Machines Corporation | Compressively stresses titanium metallurgy for contacting passivated semiconductor devices |
DE3343367A1 (de) * | 1983-11-30 | 1985-06-05 | Siemens AG, 1000 Berlin und 8000 München | Halbleiterbauelement mit hoeckerartigen, metallischen anschlusskontakten und mehrlagenverdrahtung |
JPS6178151A (ja) * | 1984-09-25 | 1986-04-21 | Nec Corp | 半導体装置 |
US5134460A (en) * | 1986-08-11 | 1992-07-28 | International Business Machines Corporation | Aluminum bump, reworkable bump, and titanium nitride structure for tab bonding |
JPS6373660A (ja) * | 1986-09-17 | 1988-04-04 | Fujitsu Ltd | 半導体装置 |
US5132775A (en) * | 1987-12-11 | 1992-07-21 | Texas Instruments Incorporated | Methods for and products having self-aligned conductive pillars on interconnects |
US5243363A (en) * | 1988-07-22 | 1993-09-07 | Canon Kabushiki Kaisha | Ink-jet recording head having bump-shaped electrode and protective layer providing structural support |
US5038996A (en) * | 1988-10-12 | 1991-08-13 | International Business Machines Corporation | Bonding of metallic surfaces |
US5182420A (en) * | 1989-04-25 | 1993-01-26 | Cray Research, Inc. | Method of fabricating metallized chip carriers from wafer-shaped substrates |
US5135155A (en) * | 1989-08-25 | 1992-08-04 | International Business Machines Corporation | Thermocompression bonding in integrated circuit packaging |
US5120418A (en) * | 1989-08-25 | 1992-06-09 | International Business Machines Corporation | Lead frame plating apparatus for thermocompression bonding |
US5148261A (en) * | 1989-08-25 | 1992-09-15 | International Business Machines Corporation | Thermocompression bonding in integrated circuit packaging |
US5006917A (en) * | 1989-08-25 | 1991-04-09 | International Business Machines Corporation | Thermocompression bonding in integrated circuit packaging |
US5242569A (en) * | 1989-08-25 | 1993-09-07 | International Business Machines Corporation | Thermocompression bonding in integrated circuit packaging |
US5150197A (en) * | 1989-10-05 | 1992-09-22 | Digital Equipment Corporation | Die attach structure and method |
US5206186A (en) * | 1990-10-26 | 1993-04-27 | General Electric Company | Method for forming semiconductor electrical contacts using metal foil and thermocompression bonding |
US5184206A (en) * | 1990-10-26 | 1993-02-02 | General Electric Company | Direct thermocompression bonding for thin electronic power chips |
US5196377A (en) * | 1990-12-20 | 1993-03-23 | Cray Research, Inc. | Method of fabricating silicon-based carriers |
US5053851A (en) * | 1991-01-14 | 1991-10-01 | International Business Machines Corp. | Metal bump for a thermal compression bond and method for making same |
US5059553A (en) * | 1991-01-14 | 1991-10-22 | Ibm Corporation | Metal bump for a thermal compression bond and method for making same |
EP0501358B1 (en) * | 1991-02-25 | 1997-01-15 | Canon Kabushiki Kaisha | Connecting method and apparatus for electric circuit components |
US5283948A (en) * | 1991-05-31 | 1994-02-08 | Cray Research, Inc. | Method of manufacturing interconnect bumps |
US5223851A (en) * | 1991-06-05 | 1993-06-29 | Trovan Limited | Apparatus for facilitating interconnection of antenna lead wires to an integrated circuit and encapsulating the assembly to form an improved miniature transponder device |
CA2075462C (en) * | 1992-01-27 | 1999-05-04 | George Erdos | Bump structure and method for bonding to a semi-conductor device |
US5508561A (en) * | 1993-11-15 | 1996-04-16 | Nec Corporation | Apparatus for forming a double-bump structure used for flip-chip mounting |
JP3353508B2 (ja) * | 1994-12-20 | 2002-12-03 | ソニー株式会社 | プリント配線板とこれを用いた電子装置 |
US5973931A (en) * | 1996-03-29 | 1999-10-26 | Sony Corporation | Printed wiring board and electronic device using same |
US5929521A (en) * | 1997-03-26 | 1999-07-27 | Micron Technology, Inc. | Projected contact structure for bumped semiconductor device and resulting articles and assemblies |
JP3149846B2 (ja) * | 1998-04-17 | 2001-03-26 | 日本電気株式会社 | 半導体装置及びその製造方法 |
US6090643A (en) | 1998-08-17 | 2000-07-18 | Teccor Electronics, L.P. | Semiconductor chip-substrate attachment structure |
JP4121665B2 (ja) * | 1999-04-19 | 2008-07-23 | 株式会社ルネサステクノロジ | 半導体基板の接合方法 |
JP3494940B2 (ja) * | 1999-12-20 | 2004-02-09 | シャープ株式会社 | テープキャリア型半導体装置、その製造方法及びそれを用いた液晶モジュール |
JP2003110016A (ja) * | 2001-09-28 | 2003-04-11 | Kobe Steel Ltd | 半導体基板上への空中金属配線の形成方法 |
JP3731053B2 (ja) * | 2002-12-18 | 2006-01-05 | 独立行政法人 宇宙航空研究開発機構 | 導電性融液中の拡散係数計測方法及び導電性融液中の拡散係数計測装置 |
US6784089B2 (en) * | 2003-01-13 | 2004-08-31 | Aptos Corporation | Flat-top bumping structure and preparation method |
US7109583B2 (en) * | 2004-05-06 | 2006-09-19 | Endwave Corporation | Mounting with auxiliary bumps |
JP2006032864A (ja) * | 2004-07-21 | 2006-02-02 | Sony Corp | 多層配線構造と多層配線構造を有する半導体装置とこれらの製造方法 |
US8604624B2 (en) * | 2008-03-19 | 2013-12-10 | Stats Chippac Ltd. | Flip chip interconnection system having solder position control mechanism |
DE102009010816B4 (de) * | 2009-02-27 | 2011-03-10 | Solarworld Innovations Gmbh | Verfahren zur Herstellung eines Halbleiter-Bauelements |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3303071A (en) * | 1964-10-27 | 1967-02-07 | Bell Telephone Labor Inc | Fabrication of a semiconductive device with closely spaced electrodes |
US3629669A (en) * | 1968-11-25 | 1971-12-21 | Gen Motors Corp | Passivated wire-bonded semiconductor device |
US3617818A (en) * | 1968-12-31 | 1971-11-02 | Texas Instruments Inc | Corrosion-resistent multimetal lead contact for semiconductor devices |
NL159822B (nl) * | 1969-01-02 | 1979-03-15 | Philips Nv | Halfgeleiderinrichting. |
DE2326314C2 (de) * | 1973-05-23 | 1983-10-27 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur Herstellung von Reliefstrukturen |
US3921200A (en) * | 1974-04-15 | 1975-11-18 | Motorola Inc | Composite beam lead metallization |
US4005455A (en) * | 1974-08-21 | 1977-01-25 | Intel Corporation | Corrosive resistant semiconductor interconnect pad |
JPS51147253A (en) * | 1975-06-13 | 1976-12-17 | Nec Corp | Structure of electrode terminal |
JPS5851425B2 (ja) * | 1975-08-22 | 1983-11-16 | 株式会社日立製作所 | ハンドウタイソウチ |
US4045594A (en) * | 1975-12-31 | 1977-08-30 | Ibm Corporation | Planar insulation of conductive patterns by chemical vapor deposition and sputtering |
-
1977
- 1977-07-18 JP JP8652477A patent/JPS5421165A/ja active Granted
-
1978
- 1978-07-17 US US05/925,324 patent/US4263606A/en not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5628852A (en) * | 1991-07-26 | 1997-05-13 | Nec Corporation | Method for manufacturing a polyimide multilayer wiring substrate |
US5686702A (en) * | 1991-07-26 | 1997-11-11 | Nippon Electric Co | Polyimide multilayer wiring substrate |
Also Published As
Publication number | Publication date |
---|---|
US4263606A (en) | 1981-04-21 |
JPS6149819B2 (ja) | 1986-10-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5421165A (en) | Semiconductor device | |
JPS528785A (en) | Semiconductor device electrode structure | |
JPS5394875A (en) | Package for semiconductor element | |
JPS5391680A (en) | Semiconductor device | |
JPS5432082A (en) | Semiconductor device | |
JPS53128285A (en) | Semiconductor device and production of the same | |
JPS5345978A (en) | Insulated-gate-protective semiconductor device | |
JPS5275987A (en) | Gate protecting device | |
JPS5285474A (en) | Semiconductor device | |
JPS5432078A (en) | Semiconductor device | |
JPS51147290A (en) | Semiconductor device | |
JPS5228868A (en) | Semiconductor device | |
JPS5313877A (en) | Semiconductor device | |
JPS5324271A (en) | Hybrid semiconduct or device | |
JPS5384414A (en) | Manufacture of solid state pickup device | |
JPS5356969A (en) | Production of tape for tape carrier | |
JPS5441666A (en) | Semiconductor integrated circuit element | |
JPS51134579A (en) | Semiconductor device | |
JPS542069A (en) | Semiconductor device | |
JPS53134373A (en) | Semiconductor integrated circuit device | |
JPS52104072A (en) | High voltage semiconductor device | |
JPS5424574A (en) | Manufacture for semiconductor device | |
JPS52143186A (en) | Taping device | |
JPS5372538A (en) | Test unit for dynamic processor element | |
JPS549588A (en) | Semiconductor control rectifier equipment |