JPS6178151A - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JPS6178151A JPS6178151A JP59200225A JP20022584A JPS6178151A JP S6178151 A JPS6178151 A JP S6178151A JP 59200225 A JP59200225 A JP 59200225A JP 20022584 A JP20022584 A JP 20022584A JP S6178151 A JPS6178151 A JP S6178151A
- Authority
- JP
- Japan
- Prior art keywords
- bonding
- semiconductor device
- bonding pad
- pad
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H01L24/42—Wire connectors; Manufacturing methods related thereto
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Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
め要約のデータは記録されません。
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は、多層配線半導体装置のボンディングパッドの
構造に関するものである。
構造に関するものである。
(従来の技f#)
半導体素子、特に集積回路素子は、より高集積化するた
め、近年多層配線技術が多用されつつある。またこれに
よりボンディングパッドの構造も複雑になり、眉間絶縁
膜などの段差がパッド巧にあり、ボンディング工程時に
層間絶縁膜の破壊などが起り、問題となる。
め、近年多層配線技術が多用されつつある。またこれに
よりボンディングパッドの構造も複雑になり、眉間絶縁
膜などの段差がパッド巧にあり、ボンディング工程時に
層間絶縁膜の破壊などが起り、問題となる。
(発明が解決しようとする問題点)
そこで1本発明はボンディングパッド内での段差をなく
し、より信頼度の高いボンディングパッドの構造を提供
することにある。
し、より信頼度の高いボンディングパッドの構造を提供
することにある。
(問題点を解決するための手段)
本発明では、スルーホールをボンディングパッド外周部
に設けることにより眉間絶縁膜による段差をボンディン
グパッド内に作らず平坦部でワ・イヤボンディング可能
な半導体装置を得る。
に設けることにより眉間絶縁膜による段差をボンディン
グパッド内に作らず平坦部でワ・イヤボンディング可能
な半導体装置を得る。
(作用)
本発明によれば、ボンディング部に眉間絶縁膜の段部が
存在しないので、ワイヤボンディング時の圧力で眉間絶
縁膜が破壊されることはなく、信頼性の高い半導体装置
を得ることができる。
存在しないので、ワイヤボンディング時の圧力で眉間絶
縁膜が破壊されることはなく、信頼性の高い半導体装置
を得ることができる。
第2図は従来のボンディングパッドの構造を示す。半導
体基板1の上に菰散層2、さらに絶縁層3があり、ボン
ディングパッドの$IAI電極4さらに層間絶縁膜5.
第2AI電極6がある。この構造のパッドにAu線7に
てボンディングを行う。かかる構造では、ボンディング
時の機械的ひずみで層間絶l!&!IX5を破壊し、近
くを通る配線に影響をあたえる。
体基板1の上に菰散層2、さらに絶縁層3があり、ボン
ディングパッドの$IAI電極4さらに層間絶縁膜5.
第2AI電極6がある。この構造のパッドにAu線7に
てボンディングを行う。かかる構造では、ボンディング
時の機械的ひずみで層間絶l!&!IX5を破壊し、近
くを通る配線に影響をあたえる。
(実施例)
次に5図面を参照して本発明を説明する。
第1図は本発明の一実施例を示す。半導体基板11、拡
散層12.絶縁層13は従来と同一構造であるが第1人
1電極14を、パッド外周部に設けた層関絶R膜15の
スルーホールにて第2A1電極16と接続しAu線17
にてボンディングを行う。この構造であれば、ワイヤボ
ンディング直下に(まほとんど段差はなくワイヤボンデ
ィング時にその圧力で層間絶縁膜15が破壊されること
はないので高信頼度の半導体装置が得られる。
散層12.絶縁層13は従来と同一構造であるが第1人
1電極14を、パッド外周部に設けた層関絶R膜15の
スルーホールにて第2A1電極16と接続しAu線17
にてボンディングを行う。この構造であれば、ワイヤボ
ンディング直下に(まほとんど段差はなくワイヤボンデ
ィング時にその圧力で層間絶縁膜15が破壊されること
はないので高信頼度の半導体装置が得られる。
(発明の効果)
本発明によれば、ワイヤボンディング時に眉間絶縁膜が
破壊されることのない信頼度の高い半導体装置を得るこ
とができる。
破壊されることのない信頼度の高い半導体装置を得るこ
とができる。
第1図は本発明の一実施例によるボンディングパッド構
造を示す断面図、第2図は従来の多層配線技術における
ボンディングパッド構造を示す断面図である。 l、11・・・・・・半導体基板、2,12・・・・・
・拡散層。 3.13・・・・・・絶縁層、4,14・・・・・・第
1AI電極。 5.15・・・・・・層間絶縁膜、6,16・・・・・
・第2AI電極、7,17・・・・・・Au線。
造を示す断面図、第2図は従来の多層配線技術における
ボンディングパッド構造を示す断面図である。 l、11・・・・・・半導体基板、2,12・・・・・
・拡散層。 3.13・・・・・・絶縁層、4,14・・・・・・第
1AI電極。 5.15・・・・・・層間絶縁膜、6,16・・・・・
・第2AI電極、7,17・・・・・・Au線。
Claims (1)
- 半導体基板上に配線層とボンディングパッドとこれら
の間に設置された層間絶縁膜とを有し、前記ボンディン
グパッドは中央部の周囲で前記配線層と前記ボンディン
グパッドとは前記層間絶縁膜のスルーホールを介して接
続されていることを特徴とする半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59200225A JPS6178151A (ja) | 1984-09-25 | 1984-09-25 | 半導体装置 |
EP85306788A EP0177251B1 (en) | 1984-09-25 | 1985-09-24 | A semiconductor device having a reliable bonding pad structure |
DE8585306788T DE3574527D1 (de) | 1984-09-25 | 1985-09-24 | Halbleiterbauelement mit zuverlaessiger bondfleckenstruktur. |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59200225A JPS6178151A (ja) | 1984-09-25 | 1984-09-25 | 半導体装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6178151A true JPS6178151A (ja) | 1986-04-21 |
Family
ID=16420887
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59200225A Pending JPS6178151A (ja) | 1984-09-25 | 1984-09-25 | 半導体装置 |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0177251B1 (ja) |
JP (1) | JPS6178151A (ja) |
DE (1) | DE3574527D1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5696406A (en) * | 1993-10-29 | 1997-12-09 | Nec Corportion | Semiconductor device and method for fabricating the same |
US5739587A (en) * | 1995-02-21 | 1998-04-14 | Seiko Epson Corporation | Semiconductor device having a multi-latered wiring structure |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL8902695A (nl) * | 1989-11-01 | 1991-06-03 | Philips Nv | Interconnectiestructuur. |
JP2616227B2 (ja) * | 1990-11-24 | 1997-06-04 | 日本電気株式会社 | 半導体装置 |
US5309025A (en) * | 1992-07-27 | 1994-05-03 | Sgs-Thomson Microelectronics, Inc. | Semiconductor bond pad structure and method |
US6093894A (en) * | 1997-05-06 | 2000-07-25 | International Business Machines Corporation | Multiconductor bonded connection assembly with direct thermal compression bonding through a base layer |
TW445616B (en) * | 1998-12-04 | 2001-07-11 | Koninkl Philips Electronics Nv | An integrated circuit device |
DE10333465B4 (de) * | 2003-07-22 | 2008-07-24 | Infineon Technologies Ag | Elektronisches Bauteil mit Halbleiterchip, Verfahren zur Herstellung desselben sowie Verfahren zur Herstellung eines Halbleiterwafers mit Kontaktflecken |
CN110168707B (zh) * | 2017-07-13 | 2023-08-29 | 富士电机株式会社 | 半导体装置 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5851425B2 (ja) * | 1975-08-22 | 1983-11-16 | 株式会社日立製作所 | ハンドウタイソウチ |
JPS5421165A (en) * | 1977-07-18 | 1979-02-17 | Nec Corp | Semiconductor device |
-
1984
- 1984-09-25 JP JP59200225A patent/JPS6178151A/ja active Pending
-
1985
- 1985-09-24 EP EP85306788A patent/EP0177251B1/en not_active Expired
- 1985-09-24 DE DE8585306788T patent/DE3574527D1/de not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5696406A (en) * | 1993-10-29 | 1997-12-09 | Nec Corportion | Semiconductor device and method for fabricating the same |
US5739587A (en) * | 1995-02-21 | 1998-04-14 | Seiko Epson Corporation | Semiconductor device having a multi-latered wiring structure |
Also Published As
Publication number | Publication date |
---|---|
EP0177251A1 (en) | 1986-04-09 |
DE3574527D1 (de) | 1990-01-04 |
EP0177251B1 (en) | 1989-11-29 |
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