JPS54154977A - Semiconductor device and its manufacture - Google Patents
Semiconductor device and its manufactureInfo
- Publication number
- JPS54154977A JPS54154977A JP6406778A JP6406778A JPS54154977A JP S54154977 A JPS54154977 A JP S54154977A JP 6406778 A JP6406778 A JP 6406778A JP 6406778 A JP6406778 A JP 6406778A JP S54154977 A JPS54154977 A JP S54154977A
- Authority
- JP
- Japan
- Prior art keywords
- groove
- film
- layer
- substrate
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 239000000758 substrate Substances 0.000 abstract 5
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000012535 impurity Substances 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 238000005530 etching Methods 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
- H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
- H01L29/1045—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface the doping structure being parallel to the channel length, e.g. DMOS like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
- H01L29/66621—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation using etching to form a recess at the gate location
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66651—Lateral single gate silicon transistors with a single crystalline channel formed on the silicon substrate after insulating device isolation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7834—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a non-planar structure, e.g. the gate or the source or the drain being non-planar
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/026—Deposition thru hole in mask
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/031—Diffusion at an edge
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/05—Etch and refill
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/111—Narrow masking
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/167—Two diffusions in one hole
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/168—V-Grooves
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6406778A JPS54154977A (en) | 1978-05-29 | 1978-05-29 | Semiconductor device and its manufacture |
US06/224,197 US4316203A (en) | 1978-05-29 | 1980-12-31 | Insulated gate field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6406778A JPS54154977A (en) | 1978-05-29 | 1978-05-29 | Semiconductor device and its manufacture |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54154977A true JPS54154977A (en) | 1979-12-06 |
JPS6237551B2 JPS6237551B2 (ja) | 1987-08-13 |
Family
ID=13247371
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6406778A Granted JPS54154977A (en) | 1978-05-29 | 1978-05-29 | Semiconductor device and its manufacture |
Country Status (2)
Country | Link |
---|---|
US (1) | US4316203A (ja) |
JP (1) | JPS54154977A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05246368A (ja) * | 1992-05-29 | 1993-09-24 | Honda Motor Co Ltd | 自動二輪車の後輪駆動装置 |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54144183A (en) * | 1978-05-01 | 1979-11-10 | Handotai Kenkyu Shinkokai | Insulated gate type electrostatic induction transistor and semiconductor integrated circuit |
US4364074A (en) * | 1980-06-12 | 1982-12-14 | International Business Machines Corporation | V-MOS Device with self-aligned multiple electrodes |
FR2513016A1 (fr) * | 1981-09-14 | 1983-03-18 | Radiotechnique Compelec | Transistor v mos haute tension, et son procede de fabrication |
JPS58106870A (ja) * | 1981-12-18 | 1983-06-25 | Nissan Motor Co Ltd | パワ−mosfet |
JPH0682837B2 (ja) * | 1982-09-16 | 1994-10-19 | 財団法人半導体研究振興会 | 半導体集積回路 |
JPS6252969A (ja) * | 1985-08-30 | 1987-03-07 | Nippon Texas Instr Kk | 絶縁ゲ−ト型電界効果半導体装置 |
US4794093A (en) * | 1987-05-01 | 1988-12-27 | Raytheon Company | Selective backside plating of gaas monolithic microwave integrated circuits |
FR2625044B1 (fr) * | 1987-12-18 | 1990-08-31 | Commissariat Energie Atomique | Transistor mos a extremite d'interface dielectrique de grille/substrat relevee et procede de fabrication de ce transistor |
WO1990011616A1 (en) * | 1989-03-21 | 1990-10-04 | Grumman Aerospace Corporation | Trench gate complimentary metal oxide semiconductor transistor |
US5108938A (en) * | 1989-03-21 | 1992-04-28 | Grumman Aerospace Corporation | Method of making a trench gate complimentary metal oxide semiconductor transistor |
WO1990011615A1 (en) * | 1989-03-21 | 1990-10-04 | Grumman Aerospace Corporation | Trench gate metal oxide semiconductor transistor |
WO1998012741A1 (en) * | 1996-09-18 | 1998-03-26 | Advanced Micro Devices, Inc. | Short channel non-self aligned vmos field effect transistor |
US5808340A (en) * | 1996-09-18 | 1998-09-15 | Advanced Micro Devices, Inc. | Short channel self aligned VMOS field effect transistor |
US6465842B2 (en) * | 1998-06-25 | 2002-10-15 | Kabushiki Kaisha Toshiba | MIS semiconductor device and method of fabricating the same |
US7239020B2 (en) * | 2004-05-06 | 2007-07-03 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Multi-mode integrated circuit structure |
JP5201307B2 (ja) * | 2005-12-22 | 2013-06-05 | 富士電機株式会社 | 半導体装置 |
CN104752205B (zh) * | 2013-12-27 | 2017-11-03 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其形成方法 |
US10224407B2 (en) | 2017-02-28 | 2019-03-05 | Sandisk Technologies Llc | High voltage field effect transistor with laterally extended gate dielectric and method of making thereof |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5366382A (en) * | 1976-11-26 | 1978-06-13 | Toshiba Corp | Mos type field effect transistor |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3600651A (en) * | 1969-12-08 | 1971-08-17 | Fairchild Camera Instr Co | Bipolar and field-effect transistor using polycrystalline epitaxial deposited silicon |
US4016587A (en) * | 1974-12-03 | 1977-04-05 | International Business Machines Corporation | Raised source and drain IGFET device and method |
US4011105A (en) * | 1975-09-15 | 1977-03-08 | Mos Technology, Inc. | Field inversion control for n-channel device integrated circuits |
DE2619713C2 (de) * | 1976-05-04 | 1984-12-20 | Siemens AG, 1000 Berlin und 8000 München | Halbleiterspeicher |
DE2642615C2 (de) * | 1976-09-22 | 1986-04-24 | Siemens AG, 1000 Berlin und 8000 München | Halbleiterspeicher |
JPS5368581A (en) * | 1976-12-01 | 1978-06-19 | Hitachi Ltd | Semiconductor device |
DE2703871C2 (de) * | 1977-01-31 | 1985-06-13 | Siemens AG, 1000 Berlin und 8000 München | Halbleiterspeicher mit wenigstens einem V-MOS-Transistor |
JPS54881A (en) * | 1977-06-03 | 1979-01-06 | Fujitsu Ltd | Semiconductor device |
DE2737134A1 (de) * | 1977-08-17 | 1979-03-01 | Siemens Ag | Verfahren zum herstellen einer ein-transistor-speicherzelle |
US4191963A (en) * | 1978-11-21 | 1980-03-04 | Instituto Venezolano De Investigaciones Cientificas (Ivic) | Built-in notched channel MOS-FET triodes for high frequency application |
-
1978
- 1978-05-29 JP JP6406778A patent/JPS54154977A/ja active Granted
-
1980
- 1980-12-31 US US06/224,197 patent/US4316203A/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5366382A (en) * | 1976-11-26 | 1978-06-13 | Toshiba Corp | Mos type field effect transistor |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05246368A (ja) * | 1992-05-29 | 1993-09-24 | Honda Motor Co Ltd | 自動二輪車の後輪駆動装置 |
Also Published As
Publication number | Publication date |
---|---|
US4316203A (en) | 1982-02-16 |
JPS6237551B2 (ja) | 1987-08-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS54154977A (en) | Semiconductor device and its manufacture | |
JPS5587429A (en) | Manufacture of semiconductor device | |
JPS5513957A (en) | Semiconductor device | |
JPS54161889A (en) | Insulated gate type field effect transistor | |
JPS5456381A (en) | Production of semiconductor device | |
JPS53148988A (en) | Manufacture of semiconductor substrate | |
JPS5478673A (en) | Manufacture of complementary insulator gate field effect transistor | |
JPS5533051A (en) | Manufacture of semiconductor device | |
JPS54162978A (en) | Manufacture of semicinductor device | |
JPS54104291A (en) | Manufacture of mos semiconductor device | |
JPS54121071A (en) | Insulator gate type field effect semiconductor device | |
JPS5491185A (en) | Semiconductor divece | |
JPS5574181A (en) | Preparing junction type field effect transistor | |
JPS54158889A (en) | Manufacture of semiconductor device | |
JPS5499577A (en) | Semiconductor assembly | |
JPS5568650A (en) | Manufacturing method of semiconductor device | |
JPS54162477A (en) | Lateral transistor | |
JPS54162982A (en) | Manufacture of semiconductor device | |
JPS5472985A (en) | Manufacture of integrated-circuit device | |
JPS54162983A (en) | Manufacture of semiconductor device | |
JPS5475991A (en) | Junction-type field effect transistor | |
JPS55102269A (en) | Method of fabricating semiconductor device | |
JPS5350687A (en) | Production of semiconductor device | |
JPS5479578A (en) | Manufacture of semiconductor device | |
JPS54144888A (en) | Manufacture for gate control semiconductor element |