JPS5366382A - Mos type field effect transistor - Google Patents

Mos type field effect transistor

Info

Publication number
JPS5366382A
JPS5366382A JP14182676A JP14182676A JPS5366382A JP S5366382 A JPS5366382 A JP S5366382A JP 14182676 A JP14182676 A JP 14182676A JP 14182676 A JP14182676 A JP 14182676A JP S5366382 A JPS5366382 A JP S5366382A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
type field
mos type
domain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14182676A
Other languages
Japanese (ja)
Inventor
Kenji Natori
Isao Sasaki
Masamizu Konaka
Fujio Masuoka
Shigeharu Horiuchi
Yoshio Nishi
Hiroshi Hara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14182676A priority Critical patent/JPS5366382A/en
Publication of JPS5366382A publication Critical patent/JPS5366382A/en
Pending legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To prevent the short channel effect, to increase the break down voltage, and to improve integration, by providing V shaped grooves between the source domain and the drain domain, forming the gate electrode on this groove, and taking the lower side as channels.
COPYRIGHT: (C)1978,JPO&Japio
JP14182676A 1976-11-26 1976-11-26 Mos type field effect transistor Pending JPS5366382A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14182676A JPS5366382A (en) 1976-11-26 1976-11-26 Mos type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14182676A JPS5366382A (en) 1976-11-26 1976-11-26 Mos type field effect transistor

Publications (1)

Publication Number Publication Date
JPS5366382A true JPS5366382A (en) 1978-06-13

Family

ID=15301016

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14182676A Pending JPS5366382A (en) 1976-11-26 1976-11-26 Mos type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5366382A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54154977A (en) * 1978-05-29 1979-12-06 Fujitsu Ltd Semiconductor device and its manufacture
JPS5574031U (en) * 1978-11-14 1980-05-21
JPH02122573A (en) * 1988-10-31 1990-05-10 Mitsubishi Electric Corp Silicon semiconductor pressure sensor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4973982A (en) * 1972-11-16 1974-07-17
JPS49126281A (en) * 1973-04-04 1974-12-03
JPS508483A (en) * 1973-05-21 1975-01-28

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4973982A (en) * 1972-11-16 1974-07-17
JPS49126281A (en) * 1973-04-04 1974-12-03
JPS508483A (en) * 1973-05-21 1975-01-28

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54154977A (en) * 1978-05-29 1979-12-06 Fujitsu Ltd Semiconductor device and its manufacture
JPS6237551B2 (en) * 1978-05-29 1987-08-13 Fujitsu Ltd
JPS5574031U (en) * 1978-11-14 1980-05-21
JPS5843774Y2 (en) * 1978-11-14 1983-10-04 セイコーインスツルメンツ株式会社 trimmer capacitor
JPH02122573A (en) * 1988-10-31 1990-05-10 Mitsubishi Electric Corp Silicon semiconductor pressure sensor

Similar Documents

Publication Publication Date Title
JPS5222480A (en) Insulating gate field effect transistor
JPS5366181A (en) High dielectric strength mis type transistor
JPS5226177A (en) Semi-conductor unit
JPS5362985A (en) Mis type field effect transistor and its production
JPS52117586A (en) Semiconductor device
JPS5382179A (en) Field effect transistor
JPS5366382A (en) Mos type field effect transistor
JPS53112069A (en) Production of mis transistor
JPS5384570A (en) Field effect semiconductor device and its manufacture
JPS5322378A (en) Production of field effect transistor s
JPS5384571A (en) Insulating gate type field effect transistor and its manufacture
JPS53143177A (en) Production of field effect transistor
JPS5263074A (en) Insulated gate type field effect transistor and its production
JPS52128080A (en) Junction-type field effect transistor
JPS5296871A (en) Manufacture of mos type transistor
JPS5371573A (en) Field effect transistor of isolating gate type
JPS548986A (en) Semiconductor device
JPS5423478A (en) Semiconductor device of field effect type
JPS5291380A (en) Field effect transistor
JPS5357976A (en) Insulated gate type field effect transistor
JPS56126970A (en) Mos field effect transistor and manufacture thereof
JPS5245281A (en) Field effect transistor of vertical junction type
JPS5419678A (en) Insulated gate field effect transistor
JPS52130572A (en) Preparation of mis type semiconductor circuit device
JPS5418687A (en) Insulating gate field effect transistor