JPS5469390A - Production of semiconductor device - Google Patents

Abstract

PURPOSE: To improve the yield of IC generation by growing an epitaxial layer on the semiconductor substrate and forming an element group on the reverse face of this substrate.

CONSTITUTION: Oxide film 3 is caused to adhere onto N-type Si substrate 1, and a prescribed region is removed to form N⁺-type collector buried region 4 by diffiusion. Next, when oxide film 3' generated at this time is made remain and other film 3 is removed to grow epitaxially a Si layer including P-type impurity throughout the surface, the Si layer becomes P-type single crystal layer 5 and P-type polycrystal Si layer 6 on substrate 1 and film 3' on region 4 respectively. After that, reverse face 7 of substrate 1 is etched with fluoric nitric acid-system etching liquid, and further, the thickness of substrate 1 is made smaller by mechanical polishing. Next, P-type impurity is diffused in a prescrived region of generated reverse face 7' until it reaches layer 5, thereby forming element separation regions 8 and 8'. After that, P-type resistance regions 9 and 9' and N-type transistor regions 10 and 10' are formed on reverse face 7' by diffusion. Thus, the substrate with crystal defects reduced in used for IC.

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