JPS5469390A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5469390A JPS5469390A JP13705377A JP13705377A JPS5469390A JP S5469390 A JPS5469390 A JP S5469390A JP 13705377 A JP13705377 A JP 13705377A JP 13705377 A JP13705377 A JP 13705377A JP S5469390 A JPS5469390 A JP S5469390A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- type
- layer
- reverse face
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Element Separation (AREA)
Abstract
PURPOSE: To improve the yield of IC generation by growing an epitaxial layer on the semiconductor substrate and forming an element group on the reverse face of this substrate.
CONSTITUTION: Oxide film 3 is caused to adhere onto N-type Si substrate 1, and a prescribed region is removed to form N+-type collector buried region 4 by diffiusion. Next, when oxide film 3' generated at this time is made remain and other film 3 is removed to grow epitaxially a Si layer including P-type impurity throughout the surface, the Si layer becomes P-type single crystal layer 5 and P-type polycrystal Si layer 6 on substrate 1 and film 3' on region 4 respectively. After that, reverse face 7 of substrate 1 is etched with fluoric nitric acid-system etching liquid, and further, the thickness of substrate 1 is made smaller by mechanical polishing. Next, P-type impurity is diffused in a prescrived region of generated reverse face 7' until it reaches layer 5, thereby forming element separation regions 8 and 8'. After that, P-type resistance regions 9 and 9' and N-type transistor regions 10 and 10' are formed on reverse face 7' by diffusion. Thus, the substrate with crystal defects reduced in used for IC.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13705377A JPS5469390A (en) | 1977-11-14 | 1977-11-14 | Production of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13705377A JPS5469390A (en) | 1977-11-14 | 1977-11-14 | Production of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5469390A true JPS5469390A (en) | 1979-06-04 |
Family
ID=15189768
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13705377A Pending JPS5469390A (en) | 1977-11-14 | 1977-11-14 | Production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5469390A (en) |
-
1977
- 1977-11-14 JP JP13705377A patent/JPS5469390A/en active Pending
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