JPS5294782A - Insulation gate type ic - Google Patents
Insulation gate type icInfo
- Publication number
- JPS5294782A JPS5294782A JP1199176A JP1199176A JPS5294782A JP S5294782 A JPS5294782 A JP S5294782A JP 1199176 A JP1199176 A JP 1199176A JP 1199176 A JP1199176 A JP 1199176A JP S5294782 A JPS5294782 A JP S5294782A
- Authority
- JP
- Japan
- Prior art keywords
- film
- gate type
- insulation gate
- mask
- active region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Non-Volatile Memory (AREA)
Abstract
PURPOSE: Si3N4 film is selectively coated on semiconductor substrate to divide active region using Si3N4 film for the mask. Then, the partial surface of Si3N4 film is coated with one electrode of capacity element, which is used for the mask to remove Si3N4 film. IGFET is formed on the exposed active region surface, thus obtaining highly dependable MOSIC.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1199176A JPS59977B2 (en) | 1976-02-05 | 1976-02-05 | Insulated gate integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1199176A JPS59977B2 (en) | 1976-02-05 | 1976-02-05 | Insulated gate integrated circuit |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58016939A Division JPS58151056A (en) | 1983-02-04 | 1983-02-04 | Capacitance element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5294782A true JPS5294782A (en) | 1977-08-09 |
JPS59977B2 JPS59977B2 (en) | 1984-01-10 |
Family
ID=11793038
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1199176A Expired JPS59977B2 (en) | 1976-02-05 | 1976-02-05 | Insulated gate integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59977B2 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54159887A (en) * | 1978-06-08 | 1979-12-18 | Nec Corp | Semiconductor memory device |
JPS6018948A (en) * | 1983-07-12 | 1985-01-31 | Nec Corp | Semiconductor integrated circuit device |
JPS6049662A (en) * | 1983-08-29 | 1985-03-18 | Nec Corp | Manufacture of semiconductor device |
JPS60153158A (en) * | 1984-01-23 | 1985-08-12 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
JPH0294466A (en) * | 1988-09-16 | 1990-04-05 | Samsung Electron Co Ltd | Double-capacitor and its manufacture |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0430188U (en) * | 1990-06-29 | 1992-03-11 |
-
1976
- 1976-02-05 JP JP1199176A patent/JPS59977B2/en not_active Expired
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54159887A (en) * | 1978-06-08 | 1979-12-18 | Nec Corp | Semiconductor memory device |
JPS6018948A (en) * | 1983-07-12 | 1985-01-31 | Nec Corp | Semiconductor integrated circuit device |
JPH0231504B2 (en) * | 1983-07-12 | 1990-07-13 | Nippon Electric Co | |
JPS6049662A (en) * | 1983-08-29 | 1985-03-18 | Nec Corp | Manufacture of semiconductor device |
JPH0230186B2 (en) * | 1983-08-29 | 1990-07-04 | Nippon Electric Co | |
JPS60153158A (en) * | 1984-01-23 | 1985-08-12 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
JPH0231865B2 (en) * | 1984-01-23 | 1990-07-17 | Oki Electric Ind Co Ltd | |
JPH0294466A (en) * | 1988-09-16 | 1990-04-05 | Samsung Electron Co Ltd | Double-capacitor and its manufacture |
Also Published As
Publication number | Publication date |
---|---|
JPS59977B2 (en) | 1984-01-10 |
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