JPS5294782A - Insulation gate type ic - Google Patents

Insulation gate type ic

Info

Publication number
JPS5294782A
JPS5294782A JP1199176A JP1199176A JPS5294782A JP S5294782 A JPS5294782 A JP S5294782A JP 1199176 A JP1199176 A JP 1199176A JP 1199176 A JP1199176 A JP 1199176A JP S5294782 A JPS5294782 A JP S5294782A
Authority
JP
Japan
Prior art keywords
film
gate type
insulation gate
mask
active region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1199176A
Other languages
Japanese (ja)
Other versions
JPS59977B2 (en
Inventor
Toshio Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1199176A priority Critical patent/JPS59977B2/en
Publication of JPS5294782A publication Critical patent/JPS5294782A/en
Publication of JPS59977B2 publication Critical patent/JPS59977B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE: Si3N4 film is selectively coated on semiconductor substrate to divide active region using Si3N4 film for the mask. Then, the partial surface of Si3N4 film is coated with one electrode of capacity element, which is used for the mask to remove Si3N4 film. IGFET is formed on the exposed active region surface, thus obtaining highly dependable MOSIC.
COPYRIGHT: (C)1977,JPO&Japio
JP1199176A 1976-02-05 1976-02-05 Insulated gate integrated circuit Expired JPS59977B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1199176A JPS59977B2 (en) 1976-02-05 1976-02-05 Insulated gate integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1199176A JPS59977B2 (en) 1976-02-05 1976-02-05 Insulated gate integrated circuit

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP58016939A Division JPS58151056A (en) 1983-02-04 1983-02-04 Capacitance element

Publications (2)

Publication Number Publication Date
JPS5294782A true JPS5294782A (en) 1977-08-09
JPS59977B2 JPS59977B2 (en) 1984-01-10

Family

ID=11793038

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1199176A Expired JPS59977B2 (en) 1976-02-05 1976-02-05 Insulated gate integrated circuit

Country Status (1)

Country Link
JP (1) JPS59977B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54159887A (en) * 1978-06-08 1979-12-18 Nec Corp Semiconductor memory device
JPS6018948A (en) * 1983-07-12 1985-01-31 Nec Corp Semiconductor integrated circuit device
JPS6049662A (en) * 1983-08-29 1985-03-18 Nec Corp Manufacture of semiconductor device
JPS60153158A (en) * 1984-01-23 1985-08-12 Oki Electric Ind Co Ltd Manufacture of semiconductor device
JPH0294466A (en) * 1988-09-16 1990-04-05 Samsung Electron Co Ltd Double-capacitor and its manufacture

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0430188U (en) * 1990-06-29 1992-03-11

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54159887A (en) * 1978-06-08 1979-12-18 Nec Corp Semiconductor memory device
JPS6018948A (en) * 1983-07-12 1985-01-31 Nec Corp Semiconductor integrated circuit device
JPH0231504B2 (en) * 1983-07-12 1990-07-13 Nippon Electric Co
JPS6049662A (en) * 1983-08-29 1985-03-18 Nec Corp Manufacture of semiconductor device
JPH0230186B2 (en) * 1983-08-29 1990-07-04 Nippon Electric Co
JPS60153158A (en) * 1984-01-23 1985-08-12 Oki Electric Ind Co Ltd Manufacture of semiconductor device
JPH0231865B2 (en) * 1984-01-23 1990-07-17 Oki Electric Ind Co Ltd
JPH0294466A (en) * 1988-09-16 1990-04-05 Samsung Electron Co Ltd Double-capacitor and its manufacture

Also Published As

Publication number Publication date
JPS59977B2 (en) 1984-01-10

Similar Documents

Publication Publication Date Title
JPS53108390A (en) Semiconductor device and its manufacture
JPS52102690A (en) Semiconductor capacitance device
JPS5355986A (en) Manufacture of semiconductor device
JPS5294782A (en) Insulation gate type ic
JPS5234671A (en) Semiconductor integrated circuit
JPS5267963A (en) Manufacture of semiconductor unit
JPS547864A (en) Manufacture for semiconductor device
JPS5464983A (en) Manufacture of semiconductor device
JPS53108773A (en) Production of semiconductor device
JPS5397791A (en) Production of semiconductor integrated circuit device
JPS5268371A (en) Semiconductor device
JPS53105385A (en) Manufacture for semiconductor
JPS547867A (en) Manufacture for semiconductor device
JPS5429587A (en) Semiconductor device
JPS52117080A (en) Preparation of mis semiconductor device
JPS53108385A (en) Manufacture for semiconductor device
JPS5258456A (en) Formation of semiconductor pellet
JPS52112287A (en) Manufacture of semiconductor device
JPS53124065A (en) Manufacture of semiconductor device
JPS5355991A (en) Manufacture of dielectric separation substrate
JPS5379460A (en) Manufacture of semiconductor device
JPS5434784A (en) Semiconductor integrated circuit device
JPS5435683A (en) Manufacture of semiconductor device
JPS52106680A (en) Surface stabilized semiconductor element
JPS5267971A (en) Manufacture of integrated circuit wafer