JPS5239385A - Process for production of semiconductor device - Google Patents
Process for production of semiconductor deviceInfo
- Publication number
- JPS5239385A JPS5239385A JP11481275A JP11481275A JPS5239385A JP S5239385 A JPS5239385 A JP S5239385A JP 11481275 A JP11481275 A JP 11481275A JP 11481275 A JP11481275 A JP 11481275A JP S5239385 A JPS5239385 A JP S5239385A
- Authority
- JP
- Japan
- Prior art keywords
- production
- semiconductor device
- faster
- ohmic contact
- metallic layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To make good ohmic contact between wiring layers by forming intermediate metallic layer whose etching speed is faster than that of the wiring material.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11481275A JPS5239385A (en) | 1975-09-25 | 1975-09-25 | Process for production of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11481275A JPS5239385A (en) | 1975-09-25 | 1975-09-25 | Process for production of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5239385A true JPS5239385A (en) | 1977-03-26 |
JPS5731660B2 JPS5731660B2 (en) | 1982-07-06 |
Family
ID=14647289
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11481275A Granted JPS5239385A (en) | 1975-09-25 | 1975-09-25 | Process for production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5239385A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5624951A (en) * | 1979-08-07 | 1981-03-10 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS5939050A (en) * | 1982-08-27 | 1984-03-03 | Fujitsu Ltd | Manufacture of semiconductor device |
US4659427A (en) * | 1984-12-31 | 1987-04-21 | Gte Laboratories Incorporated | Via formation for multilayered metalization |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4479868A (en) * | 1983-10-21 | 1984-10-30 | Westinghouse Electric Corp. | Gas measuring probe |
JPS6118856A (en) * | 1984-07-06 | 1986-01-27 | Fujikura Ltd | Heating of sensor |
AU596538B2 (en) * | 1987-09-03 | 1990-05-03 | International Control Automation Finance Sa | Method of applying an automotive type oxygen sensor for use in an industrial process analyzer |
-
1975
- 1975-09-25 JP JP11481275A patent/JPS5239385A/en active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5624951A (en) * | 1979-08-07 | 1981-03-10 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS5939050A (en) * | 1982-08-27 | 1984-03-03 | Fujitsu Ltd | Manufacture of semiconductor device |
US4659427A (en) * | 1984-12-31 | 1987-04-21 | Gte Laboratories Incorporated | Via formation for multilayered metalization |
Also Published As
Publication number | Publication date |
---|---|
JPS5731660B2 (en) | 1982-07-06 |
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