JPS5242375A - Process for production of semiconductor device - Google Patents
Process for production of semiconductor deviceInfo
- Publication number
- JPS5242375A JPS5242375A JP11837475A JP11837475A JPS5242375A JP S5242375 A JPS5242375 A JP S5242375A JP 11837475 A JP11837475 A JP 11837475A JP 11837475 A JP11837475 A JP 11837475A JP S5242375 A JPS5242375 A JP S5242375A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- production
- semiconductor device
- relation
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Weting (AREA)
Abstract
PURPOSE: To make etching by providing a layer of a known etching rate in relation to an etching solution on an etching mask, thereby forming a constant etching depth on a semiconductor substrate.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11837475A JPS5242375A (en) | 1975-09-30 | 1975-09-30 | Process for production of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11837475A JPS5242375A (en) | 1975-09-30 | 1975-09-30 | Process for production of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5242375A true JPS5242375A (en) | 1977-04-01 |
JPS5530293B2 JPS5530293B2 (en) | 1980-08-09 |
Family
ID=14735111
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11837475A Granted JPS5242375A (en) | 1975-09-30 | 1975-09-30 | Process for production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5242375A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007227892A (en) * | 2005-12-23 | 2007-09-06 | Interuniv Micro Electronica Centrum Vzw | Method of selectively epitaxially growing source/drain regions |
-
1975
- 1975-09-30 JP JP11837475A patent/JPS5242375A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007227892A (en) * | 2005-12-23 | 2007-09-06 | Interuniv Micro Electronica Centrum Vzw | Method of selectively epitaxially growing source/drain regions |
Also Published As
Publication number | Publication date |
---|---|
JPS5530293B2 (en) | 1980-08-09 |
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