JPS5359377A - Insulating gate type electric field effect semiconductor unit and itsproduction - Google Patents

Insulating gate type electric field effect semiconductor unit and itsproduction

Info

Publication number
JPS5359377A
JPS5359377A JP265776A JP265776A JPS5359377A JP S5359377 A JPS5359377 A JP S5359377A JP 265776 A JP265776 A JP 265776A JP 265776 A JP265776 A JP 265776A JP S5359377 A JPS5359377 A JP S5359377A
Authority
JP
Japan
Prior art keywords
itsproduction
electric field
field effect
type electric
gate type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP265776A
Other languages
Japanese (ja)
Other versions
JPS597230B2 (en
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Corp filed Critical TDK Corp
Priority to JP51002657A priority Critical patent/JPS597230B2/en
Publication of JPS5359377A publication Critical patent/JPS5359377A/en
Publication of JPS597230B2 publication Critical patent/JPS597230B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Weting (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
  • Local Oxidation Of Silicon (AREA)

Abstract

PURPOSE: To reduce a floating capacity between a gate and a source and between a gate and a drain, by forming the SiO2 film-which is formed on source and drain areaas-by the local oxidization of a semiconductor substrate and providing source and drain areas deeply in the substrate on the part except a channel forming part.
COPYRIGHT: (C)1978,JPO&Japio
JP51002657A 1976-01-12 1976-01-12 Insulated gate field effect semiconductor device and its manufacturing method Expired JPS597230B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51002657A JPS597230B2 (en) 1976-01-12 1976-01-12 Insulated gate field effect semiconductor device and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51002657A JPS597230B2 (en) 1976-01-12 1976-01-12 Insulated gate field effect semiconductor device and its manufacturing method

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP46096086A Division JPS5141515B2 (en) 1971-11-29 1971-11-29

Publications (2)

Publication Number Publication Date
JPS5359377A true JPS5359377A (en) 1978-05-29
JPS597230B2 JPS597230B2 (en) 1984-02-17

Family

ID=11535403

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51002657A Expired JPS597230B2 (en) 1976-01-12 1976-01-12 Insulated gate field effect semiconductor device and its manufacturing method

Country Status (1)

Country Link
JP (1) JPS597230B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61127179A (en) * 1984-11-21 1986-06-14 ローム・コーポレーション Electric program type memory for single transistor and method for maunfacturing and using the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4853679A (en) * 1971-10-29 1973-07-27
JPS5141515A (en) * 1974-10-04 1976-04-07 Kawai Musical Instr Mfg Co Denshigatsukino gakuonhatsuseisochi

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4853679A (en) * 1971-10-29 1973-07-27
JPS5141515A (en) * 1974-10-04 1976-04-07 Kawai Musical Instr Mfg Co Denshigatsukino gakuonhatsuseisochi

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61127179A (en) * 1984-11-21 1986-06-14 ローム・コーポレーション Electric program type memory for single transistor and method for maunfacturing and using the same

Also Published As

Publication number Publication date
JPS597230B2 (en) 1984-02-17

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