JPH11503573A - 降伏電圧強化バイポーラsoiトランジスタ - Google Patents
降伏電圧強化バイポーラsoiトランジスタInfo
- Publication number
- JPH11503573A JPH11503573A JP8530952A JP53095296A JPH11503573A JP H11503573 A JPH11503573 A JP H11503573A JP 8530952 A JP8530952 A JP 8530952A JP 53095296 A JP53095296 A JP 53095296A JP H11503573 A JPH11503573 A JP H11503573A
- Authority
- JP
- Japan
- Prior art keywords
- region
- transistor
- plug
- base
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015556 catabolic process Effects 0.000 title description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 19
- 239000010703 silicon Substances 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 241000282376 Panthera tigris Species 0.000 claims 1
- 239000002253 acid Substances 0.000 claims 1
- 239000012535 impurity Substances 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/7317—Bipolar thin film transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.バイポーラSOIトランジスタであって、 −主面を有する基板(1)、 −前記主面上の酸化物層(2)、 −前記酸化物層(2)上の第1の伝導形のシリコン層(3)、 −前記シリコン層(3)中へ延びる第2の伝導形のベース領域(4)、 −前記ベース領域(4)中へ延びる前記第1の伝導形のエミッタ領域(5)、お よび −前記ベース領域(4)から横方向に離れたところにおいて、前記シリコン層( 3)中へ延びる前記第1の伝導形のコレクタ領域(6)、 を有し、前記第2の伝導形のプラグ領域(8)が、前記コレクタ領域(6)とは 反対側の前記エミッタ領域(5)において、前記シリコン層(3)の中を前記酸 化物層(2)まで延びていること、前記プラグ領域(8)の一部分(8’)が、 前記ベース領域(4)から離れたところにおいて、エミッタ領域(5)の少なく とも一部分の下を前記酸化物層(2)の表面に沿ってコレクタ領域(6)の方へ 横方向に延びていること、および前記プラグ領域が前記ベース領域(4)と電気 的に接続されていることを特徴とするトランジスタ。 2.請求項第1項記載のトランジスタであって、前記プラグ領域(8)が少な くとも部分的に前記ベース領域(4)中を通って延びていることを特徴とするト ランジスタ。 3.請求項第2項記載のトランジスタであって、前記プラグ領域(8)が前記 ベース領域(4)中を完全に貫通して延びていることを特徴とするトランジスタ 。 4.請求項第1項記載のトランジスタであって、前記プラグ領域が前記ベース 領域(4)から横方向に離れたところにおいて延びていることを特徴とするトラ ンジスタ。 5.請求項第4項記載のトランジスタであって、前記プラグ領域が前記ベース 領域(4)へ外部的に接続されていることを特徴とするトランジスタ。 6.請求項第1項ないし第6項のうちの任意の項記載のトランジスタであって 、 プラグ領域(8)の前記部分(8’)が前記ベース領域(4)の端部まで横方向 に延びていることを特徴とするトランジスタ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9501385A SE515867C2 (sv) | 1995-04-13 | 1995-04-13 | Bipolär SOI-transistor |
SE9501385-0 | 1995-04-13 | ||
PCT/SE1996/000458 WO1996032798A1 (en) | 1995-04-13 | 1996-04-09 | Bipolar silicon-on-insulator transistor with increased breakdown voltage |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH11503573A true JPH11503573A (ja) | 1999-03-26 |
JP4102434B2 JP4102434B2 (ja) | 2008-06-18 |
Family
ID=20397959
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP53095296A Expired - Lifetime JP4102434B2 (ja) | 1995-04-13 | 1996-04-09 | 降伏電圧強化バイポーラsoiトランジスタ |
Country Status (11)
Country | Link |
---|---|
EP (1) | EP0820645B1 (ja) |
JP (1) | JP4102434B2 (ja) |
KR (1) | KR100372035B1 (ja) |
CN (1) | CN1083162C (ja) |
AU (1) | AU5351696A (ja) |
CA (1) | CA2217049A1 (ja) |
DE (1) | DE69622270T2 (ja) |
ES (1) | ES2179941T3 (ja) |
HK (1) | HK1010606A1 (ja) |
SE (1) | SE515867C2 (ja) |
WO (1) | WO1996032798A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014192197A (ja) * | 2013-03-26 | 2014-10-06 | New Japan Radio Co Ltd | 半導体装置 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8022506B2 (en) | 2004-12-28 | 2011-09-20 | Nxp B.V. | SOI device with more immunity from substrate voltage |
FR2978614B1 (fr) * | 2011-07-25 | 2014-09-05 | Altis Semiconductor Snc | Substrat semi-conducteur comprenant des zones dopees formant une jonction p-n |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4233618A (en) * | 1978-07-31 | 1980-11-11 | Sprague Electric Company | Integrated circuit with power transistor |
US4766482A (en) * | 1986-12-09 | 1988-08-23 | General Electric Company | Semiconductor device and method of making the same |
JPH02327A (ja) * | 1987-10-09 | 1990-01-05 | Fujitsu Ltd | 半導体装置 |
US4843448A (en) * | 1988-04-18 | 1989-06-27 | The United States Of America As Represented By The Secretary Of The Navy | Thin-film integrated injection logic |
US4902633A (en) * | 1988-05-09 | 1990-02-20 | Motorola, Inc. | Process for making a bipolar integrated circuit |
US5237193A (en) * | 1988-06-24 | 1993-08-17 | Siliconix Incorporated | Lightly doped drain MOSFET with reduced on-resistance |
US5262345A (en) * | 1990-01-25 | 1993-11-16 | Analog Devices, Inc. | Complimentary bipolar/CMOS fabrication method |
JPH0479364A (ja) * | 1990-07-23 | 1992-03-12 | Sony Corp | 半導体装置の製造方法 |
JPH04213219A (ja) * | 1990-12-07 | 1992-08-04 | Nippon Telegr & Teleph Corp <Ntt> | 半導体集積回路 |
JP2654268B2 (ja) * | 1991-05-13 | 1997-09-17 | 株式会社東芝 | 半導体装置の使用方法 |
-
1995
- 1995-04-13 SE SE9501385A patent/SE515867C2/sv not_active IP Right Cessation
-
1996
- 1996-04-09 JP JP53095296A patent/JP4102434B2/ja not_active Expired - Lifetime
- 1996-04-09 KR KR1019970707269A patent/KR100372035B1/ko not_active IP Right Cessation
- 1996-04-09 DE DE69622270T patent/DE69622270T2/de not_active Expired - Lifetime
- 1996-04-09 ES ES96910275T patent/ES2179941T3/es not_active Expired - Lifetime
- 1996-04-09 EP EP96910275A patent/EP0820645B1/en not_active Expired - Lifetime
- 1996-04-09 WO PCT/SE1996/000458 patent/WO1996032798A1/en active IP Right Grant
- 1996-04-09 AU AU53516/96A patent/AU5351696A/en not_active Abandoned
- 1996-04-09 CA CA002217049A patent/CA2217049A1/en not_active Abandoned
- 1996-04-09 CN CN96193285A patent/CN1083162C/zh not_active Expired - Lifetime
-
1998
- 1998-10-29 HK HK98111607A patent/HK1010606A1/xx not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014192197A (ja) * | 2013-03-26 | 2014-10-06 | New Japan Radio Co Ltd | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
CA2217049A1 (en) | 1996-10-17 |
SE9501385L (sv) | 1996-10-14 |
SE9501385D0 (sv) | 1995-04-13 |
SE515867C2 (sv) | 2001-10-22 |
WO1996032798A1 (en) | 1996-10-17 |
EP0820645B1 (en) | 2002-07-10 |
DE69622270D1 (de) | 2002-08-14 |
HK1010606A1 (en) | 1999-06-25 |
CN1083162C (zh) | 2002-04-17 |
EP0820645A1 (en) | 1998-01-28 |
AU5351696A (en) | 1996-10-30 |
ES2179941T3 (es) | 2003-02-01 |
DE69622270T2 (de) | 2003-02-06 |
KR19980703869A (ko) | 1998-12-05 |
JP4102434B2 (ja) | 2008-06-18 |
CN1181842A (zh) | 1998-05-13 |
KR100372035B1 (ko) | 2003-06-19 |
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