SE9501385L - Bipolar silicon-on-insulator transistor - Google Patents

Bipolar silicon-on-insulator transistor

Info

Publication number
SE9501385L
SE9501385L SE9501385A SE9501385A SE9501385L SE 9501385 L SE9501385 L SE 9501385L SE 9501385 A SE9501385 A SE 9501385A SE 9501385 A SE9501385 A SE 9501385A SE 9501385 L SE9501385 L SE 9501385L
Authority
SE
Sweden
Prior art keywords
region
conductivity type
oxide layer
silicon
silicon layer
Prior art date
Application number
SE9501385A
Other languages
Unknown language ( )
English (en)
Other versions
SE9501385D0 (sv
SE515867C2 (sv
Inventor
Andrej Litwin
Torkel Arnborg
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Priority to SE9501385A priority Critical patent/SE515867C2/sv
Publication of SE9501385D0 publication Critical patent/SE9501385D0/sv
Priority to CN96193285A priority patent/CN1083162C/zh
Priority to AU53516/96A priority patent/AU5351696A/en
Priority to JP53095296A priority patent/JP4102434B2/ja
Priority to PCT/SE1996/000458 priority patent/WO1996032798A1/en
Priority to EP96910275A priority patent/EP0820645B1/en
Priority to CA002217049A priority patent/CA2217049A1/en
Priority to DE69622270T priority patent/DE69622270T2/de
Priority to ES96910275T priority patent/ES2179941T3/es
Priority to KR1019970707269A priority patent/KR100372035B1/ko
Publication of SE9501385L publication Critical patent/SE9501385L/sv
Priority to US08/948,738 priority patent/US6043555A/en
Priority to HK98111607A priority patent/HK1010606A1/xx
Publication of SE515867C2 publication Critical patent/SE515867C2/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/7317—Bipolar thin film transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
SE9501385A 1995-04-13 1995-04-13 Bipolär SOI-transistor SE515867C2 (sv)

Priority Applications (12)

Application Number Priority Date Filing Date Title
SE9501385A SE515867C2 (sv) 1995-04-13 1995-04-13 Bipolär SOI-transistor
KR1019970707269A KR100372035B1 (ko) 1995-04-13 1996-04-09 증가된항복전압을갖는바이폴라절연기판상의실리콘트랜지스터
CA002217049A CA2217049A1 (en) 1995-04-13 1996-04-09 Bipolar silicon-on-insulator transistor with increased breakdown voltage
AU53516/96A AU5351696A (en) 1995-04-13 1996-04-09 Bipolar silicon-on-insulator transistor with increased break down voltage
JP53095296A JP4102434B2 (ja) 1995-04-13 1996-04-09 降伏電圧強化バイポーラｓｏｉトランジスタ
PCT/SE1996/000458 WO1996032798A1 (en) 1995-04-13 1996-04-09 Bipolar silicon-on-insulator transistor with increased breakdown voltage
EP96910275A EP0820645B1 (en) 1995-04-13 1996-04-09 Bipolar silicon-on-insulator transistor with increased breakdown voltage
CN96193285A CN1083162C (zh) 1995-04-13 1996-04-09 击穿电压增加的双极绝缘体上硅晶体管
DE69622270T DE69622270T2 (de) 1995-04-13 1996-04-09 Silizium auf isolator-bipolartransistor mit erhöhter durchbruchspannung
ES96910275T ES2179941T3 (es) 1995-04-13 1996-04-09 Transistor bipolar de silicio sobre aislante con tension de ruptura incrementada.
US08/948,738 US6043555A (en) 1995-04-13 1997-10-10 Bipolar silicon-on-insulator transistor with increased breakdown voltage
HK98111607A HK1010606A1 (en) 1995-04-13 1998-10-29 Bipolar silicon-on-insulator transistor with increased breakdown voltage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9501385A SE515867C2 (sv) 1995-04-13 1995-04-13 Bipolär SOI-transistor

Publications (3)

Publication Number Publication Date
SE9501385D0 SE9501385D0 (sv) 1995-04-13
SE9501385L true SE9501385L (sv) 1996-10-14
SE515867C2 SE515867C2 (sv) 2001-10-22

Family

ID=20397959

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9501385A SE515867C2 (sv) 1995-04-13 1995-04-13 Bipolär SOI-transistor

Country Status (11)

Country Link
EP (1) EP0820645B1 (sv)
JP (1) JP4102434B2 (sv)
KR (1) KR100372035B1 (sv)
CN (1) CN1083162C (sv)
AU (1) AU5351696A (sv)
CA (1) CA2217049A1 (sv)
DE (1) DE69622270T2 (sv)
ES (1) ES2179941T3 (sv)
HK (1) HK1010606A1 (sv)
SE (1) SE515867C2 (sv)
WO (1) WO1996032798A1 (sv)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8022506B2 (en) 2004-12-28 2011-09-20 Nxp B.V. SOI device with more immunity from substrate voltage
FR2978614B1 (fr) * 2011-07-25 2014-09-05 Altis Semiconductor Snc Substrat semi-conducteur comprenant des zones dopees formant une jonction p-n
JP6125866B2 (ja) * 2013-03-26 2017-05-10 新日本無線株式会社 半導体装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4233618A (en) * 1978-07-31 1980-11-11 Sprague Electric Company Integrated circuit with power transistor
US4766482A (en) * 1986-12-09 1988-08-23 General Electric Company Semiconductor device and method of making the same
JPH02327A (ja) * 1987-10-09 1990-01-05 Fujitsu Ltd 半導体装置
US4843448A (en) * 1988-04-18 1989-06-27 The United States Of America As Represented By The Secretary Of The Navy Thin-film integrated injection logic
US4902633A (en) * 1988-05-09 1990-02-20 Motorola, Inc. Process for making a bipolar integrated circuit
US5237193A (en) * 1988-06-24 1993-08-17 Siliconix Incorporated Lightly doped drain MOSFET with reduced on-resistance
US5262345A (en) * 1990-01-25 1993-11-16 Analog Devices, Inc. Complimentary bipolar/CMOS fabrication method
JPH0479364A (ja) * 1990-07-23 1992-03-12 Sony Corp 半導体装置の製造方法
JPH04213219A (ja) * 1990-12-07 1992-08-04 Nippon Telegr & Teleph Corp <Ntt> 半導体集積回路
JP2654268B2 (ja) * 1991-05-13 1997-09-17 株式会社東芝 半導体装置の使用方法

Also Published As

Publication number Publication date
KR100372035B1 (ko) 2003-06-19
WO1996032798A1 (en) 1996-10-17
SE9501385D0 (sv) 1995-04-13
DE69622270T2 (de) 2003-02-06
SE515867C2 (sv) 2001-10-22
ES2179941T3 (es) 2003-02-01
EP0820645A1 (en) 1998-01-28
KR19980703869A (ko) 1998-12-05
DE69622270D1 (de) 2002-08-14
AU5351696A (en) 1996-10-30
HK1010606A1 (en) 1999-06-25
JPH11503573A (ja) 1999-03-26
EP0820645B1 (en) 2002-07-10
JP4102434B2 (ja) 2008-06-18
CN1083162C (zh) 2002-04-17
CA2217049A1 (en) 1996-10-17
CN1181842A (zh) 1998-05-13

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Legal Events

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NUG Patent has lapsed