JPH11163412A - Led illuminator - Google Patents

Led illuminator

Info

Publication number
JPH11163412A
JPH11163412A JP32262697A JP32262697A JPH11163412A JP H11163412 A JPH11163412 A JP H11163412A JP 32262697 A JP32262697 A JP 32262697A JP 32262697 A JP32262697 A JP 32262697A JP H11163412 A JPH11163412 A JP H11163412A
Authority
JP
Japan
Prior art keywords
substrate
emitting diode
light emitting
lighting device
led lighting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP32262697A
Other languages
Japanese (ja)
Inventor
Sakuo Kamata
策雄 鎌田
Shoichi Koyama
昇一 小山
Nobuyuki Asahi
信行 朝日
Toshiyuki Suzuki
俊之 鈴木
Eiji Shiohama
英二 塩浜
Masaru Sugimoto
勝 杉本
Shohei Yamamoto
正平 山本
Jiro Hashizume
二郎 橋爪
Yasushi Akiba
泰史 秋庭
Koji Tanaka
孝司 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Priority to JP32262697A priority Critical patent/JPH11163412A/en
Priority to TW087119454A priority patent/TW408497B/en
Priority to EP98203973A priority patent/EP0921568B1/en
Priority to US09/199,893 priority patent/US6331063B1/en
Priority to DE69841798T priority patent/DE69841798D1/en
Publication of JPH11163412A publication Critical patent/JPH11163412A/en
Priority to US09/895,354 priority patent/US20020006040A1/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched

Abstract

PROBLEM TO BE SOLVED: To provide a LED illuminator which can easily obtain arbitrary luminous intensity distribution characteristic, while being formed thin. SOLUTION: A large number concavities 11 are arranged vertically and horizontally on one side of a rectangular plate-type molded interconnection device(MID) substrate 1, and three LED chips are implemented on the bottom of each concavity 11. Since a plurality of LED chips 1 are implemented in each of the concavity 11 and positioned three-dimensionally on MID substrate 10, arbitrary luminous intensity distribution characteristic can be easily obtained according to the shape of the substrate 10, while forming a module thin. If the plurality of the LED chips 1 are implemented, which have one or more different luminescent colors, preferably at least three colors of red, blue and green, delicate color differences such as white light of a fluorescent lamp and daylight can be realized in the light of the overall module by mixing the luminescent colors from each of LED chips 1.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、基板に複数個の発
光ダイオード素子を配設して成るLED照明装置に関す
るものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an LED lighting device having a plurality of light emitting diode elements arranged on a substrate.

【0002】[0002]

【従来の技術】従来、光源に白熱灯や蛍光灯を用いた照
明装置では可視光以外に赤外線や紫外線も放射されてお
り、このような可視光以外の光が被照射物(例えば、美
術品や食品等)に良くない影響を与えていることが多か
った。また、このような照明装置では光源(ランプ)に
寿命があり、交換が必要である。
2. Description of the Related Art Conventionally, in an illuminating device using an incandescent lamp or a fluorescent lamp as a light source, infrared rays and ultraviolet rays are radiated in addition to visible light. And food). In such a lighting device, the light source (lamp) has a limited life and needs to be replaced.

【0003】一方、最近では高輝度の発光ダイオード
(以下、「LED」と略す。)が開発され、このような
単体のLED(LEDディスクリート)50を図25及
び図26に示すように基板51上に複数個実装してモジ
ュール化することにより、赤外線や紫外線等の有害光線
が放射されない照明装置が使用されてきている。このよ
うなLED照明装置では、白熱灯や蛍光灯のような光源
に比較して、寿命が長く、ランプ交換等のメンテナンス
が不要となって使い勝手が良いという利点がある。
On the other hand, recently, a high-brightness light emitting diode (hereinafter abbreviated as “LED”) has been developed, and such a single LED (LED discrete) 50 is mounted on a substrate 51 as shown in FIGS. A lighting device that does not emit harmful rays such as infrared rays and ultraviolet rays by mounting a plurality of modules on a module has been used. Such an LED lighting device has an advantage that it has a longer service life than a light source such as an incandescent lamp or a fluorescent lamp, does not require maintenance such as lamp replacement, and is easy to use.

【0004】[0004]

【発明が解決しようとする課題】ところで、上述のよう
に種々の利点を有するLED照明装置ではあるが、以下
に述べるような問題を有している。すなわち、LED5
0は単波長(単色)であるために白色光が得られず、且
つ光の指向性が強いために波長(発光色)の異なるLE
D50を混在して基板51に実装しても各色の光が完全
に混じらずに白色光源を得ることが難しく、特に被照射
物の影が虹色に見えてしまう。よって、蛍光灯を光源と
する照明装置のように昼光色と白色のような微妙な色差
を実現させることが不可能である。また、LED50を
基板51に高密度で実装すると各LED50からの発熱
で温度が上昇し、発光効率及び輝度が低下してしまうと
ともに、各LED50の寿命が短くなってしまう。さら
に、LED50の高さ寸法が大きいために薄型化が困難
である。
Although the LED lighting device has various advantages as described above, it has the following problems. That is, LED5
Since 0 is a single wavelength (monochromatic), white light cannot be obtained, and LE has a different wavelength (emission color) because the light has a high directivity.
Even if D50 is mixed and mounted on the substrate 51, it is difficult to obtain a white light source because the lights of the respective colors are not completely mixed, and particularly, the shadow of the irradiated object looks rainbow-colored. Therefore, it is impossible to realize a subtle color difference such as daylight and white as in a lighting device using a fluorescent lamp as a light source. Further, when the LEDs 50 are mounted on the substrate 51 at a high density, the temperature rises due to the heat generated from each LED 50, and the luminous efficiency and the luminance are reduced, and the life of each LED 50 is shortened. Furthermore, it is difficult to reduce the thickness of the LED 50 because the height of the LED 50 is large.

【0005】本発明は上記問題に鑑みて為されたもので
あり、請求項1及び請求項12〜14の発明の目的とす
るところは、任意の配光が容易に得られるとともに薄型
化が可能なLED照明装置を提供することにあり、ま
た、請求項2及び請求項15,16の発明の目的とする
ところは、白色や昼光色のような微妙な色差が実現可能
なLED照明装置を提供することにあり、さらに、請求
項4〜11の発明の目的とするところは、温度上昇を抑
えて発光効率及び輝度の低下を防止し発光ダイオード素
子の寿命も長くできるLED照明装置を提供することに
ある。
SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and it is an object of the inventions of claims 1 and 12 to 14 that an arbitrary light distribution can be easily obtained and the thickness can be reduced. Another object of the present invention is to provide an LED lighting device capable of realizing a subtle color difference such as white or daylight. Another object of the present invention is to provide an LED lighting device capable of suppressing a rise in temperature, preventing a decrease in luminous efficiency and luminance, and extending the life of a light emitting diode element. is there.

【0006】[0006]

【課題を解決するための手段】請求項1の発明は、上記
目的を達成するために、基板に凹部又は凸部の少なくと
も一方を複数形成するとともに、上記各凹部又は凸部に
各々1乃至複数の発光ダイオード素子を配設したことを
特徴とし、任意の配光が容易に得られるとともに薄型化
が可能となる。
According to a first aspect of the present invention, at least one of a concave portion and a convex portion is formed on a substrate, and one or more concave portions or convex portions are formed on each of the concave portions or the convex portions. The light emitting diode element of the above is disposed, and any light distribution can be easily obtained and the thickness can be reduced.

【0007】請求項2の発明は、請求項1の発明におい
て、上記複数の発光ダイオード素子に発光色の異なる1
乃至複数種の発光ダイオード素子を含むことを特徴と
し、白色や昼光色のような微妙な色差が実現可能とな
る。請求項3の発明は、請求項1又は2の発明におい
て、上記凹部又は凸部に上記発光ダイオード素子からの
光を反射する反射手段を設けたことを特徴とし、高輝度
並びに高効率化が図れる。
According to a second aspect of the present invention, in the first aspect of the present invention, the plurality of light emitting diode elements have different emission colors.
In addition, the light emitting device includes a plurality of types of light emitting diode elements, and can realize a subtle color difference such as white or daylight. According to a third aspect of the present invention, in the first or second aspect of the present invention, a reflection means for reflecting light from the light-emitting diode element is provided in the concave portion or the convex portion, so that high brightness and high efficiency can be achieved. .

【0008】請求項4の発明は、請求項1の発明におい
て、上記基板の少なくとも一部に複数の発光ダイオード
素子のグランドとなる金属板を設け、該金属板に上記発
光ダイオード素子を接触させて成ることを特徴とし、発
光ダイオード素子が発する熱を金属板により効率良く放
熱することができ、温度上昇を抑えて発光効率や輝度の
低下が防止できるとともに発光ダイオード素子の寿命が
延ばせる。
According to a fourth aspect of the present invention, in the first aspect of the present invention, a metal plate serving as a ground for a plurality of light emitting diode elements is provided on at least a part of the substrate, and the light emitting diode elements are brought into contact with the metal plate. The heat generated by the light emitting diode element can be efficiently dissipated by the metal plate, the temperature rise can be suppressed, the luminous efficiency and the luminance can be prevented from lowering, and the life of the light emitting diode element can be extended.

【0009】請求項5の発明は、請求項1の発明におい
て、少なくとも上記基板の凹部又は凸部の発光ダイオー
ド素子の周りに当該発光ダイオード素子からの光を反射
する金属製の放熱体を配設したことを特徴とし、発光ダ
イオード素子が発する熱を金属製の放熱体により効率良
く放熱することができ、温度上昇を抑えて発光効率や輝
度の低下が防止できるとともに発光ダイオード素子の寿
命が延ばせる。
According to a fifth aspect of the present invention, in the first aspect of the present invention, a metal radiator that reflects light from the light emitting diode element is disposed at least around the light emitting diode element in the concave or convex portion of the substrate. The heat generated by the light emitting diode element can be efficiently radiated by the metal radiator, the temperature rise can be suppressed, the luminous efficiency and the luminance can be prevented from lowering, and the life of the light emitting diode element can be extended.

【0010】請求項6の発明は、請求項1の発明におい
て、上記基板に銅張金属基板を一体に形成し、該銅張金
属基板の一方の面に形成された銅張部分に上記発光ダイ
オード素子を実装してグランドとし、上記発光ダイオー
ド素子の発光を制御する制御手段を構成する回路素子を
上記銅張金属基板の他方の面に実装したことを特徴と
し、小型化が図れるとともに制御手段のノイズに対する
シールドも可能になる。
According to a sixth aspect of the present invention, in the first aspect of the present invention, a copper-clad metal substrate is integrally formed on the substrate, and the light-emitting diode is provided on a copper-clad portion formed on one surface of the copper-clad metal substrate. The element is mounted as a ground, and a circuit element constituting control means for controlling light emission of the light emitting diode element is mounted on the other surface of the copper-clad metal substrate, so that miniaturization can be achieved and the control means Shielding against noise is also possible.

【0011】請求項7の発明は、請求項1の発明におい
て、上記発光ダイオード素子から発する熱を放熱する放
熱体を備え、該放熱体に複数の凹凸部を設けたことを特
徴とし、発光ダイオード素子が発する熱を放熱体により
効率良く放熱することができ、特に凹凸部を設けること
で放熱体の表面積を増加させて効率良く放熱することが
でき、温度上昇を抑えて発光効率や輝度の低下が防止で
きるとともに発光ダイオード素子の寿命が延ばせる。
According to a seventh aspect of the present invention, there is provided the light emitting diode according to the first aspect, further comprising a radiator for radiating heat generated from the light emitting diode element, wherein the radiator is provided with a plurality of uneven portions. The heat generated by the element can be efficiently dissipated by the radiator. Particularly, by providing the uneven portion, the surface area of the radiator can be increased and the heat can be dissipated more efficiently. Can be prevented and the life of the light emitting diode element can be extended.

【0012】請求項8の発明は、請求項1の発明におい
て、上記発光ダイオード素子の少なくとも一部分に接触
する放熱フィンを備えたことを特徴とし、発光ダイオー
ド素子が発する熱を放熱フィンにより効率良く放熱する
ことができ、温度上昇を抑えて発光効率や輝度の低下が
防止できるとともに発光ダイオード素子の寿命が延ばせ
る。
According to an eighth aspect of the present invention, in the first aspect of the present invention, a heat radiation fin is provided which contacts at least a part of the light emitting diode element, and the heat generated by the light emitting diode element is efficiently radiated by the heat radiation fin. In addition, the temperature rise can be suppressed, the luminous efficiency and the luminance can be prevented from lowering, and the life of the light emitting diode element can be extended.

【0013】請求項9の発明は、請求項1の発明におい
て、上記発光ダイオード素子と少なくとも一部で接触す
る放熱ピンを上記基板内に埋設したことを特徴とし、発
光ダイオード素子が発する熱を放熱ピンにより効率良く
放熱することができ、温度上昇を抑えて発光効率や輝度
の低下が防止できるとともに発光ダイオード素子の寿命
が延ばせる。
According to a ninth aspect of the present invention, in the first aspect of the present invention, a heat radiating pin at least partially in contact with the light emitting diode element is buried in the substrate to radiate heat generated by the light emitting diode element. The heat can be efficiently dissipated by the pins, and a rise in temperature can be suppressed to prevent a decrease in luminous efficiency and luminance, and a life of the light emitting diode element can be extended.

【0014】請求項10の発明は、請求項1の発明にお
いて、上記基板の凸部を多層に形成したことを特徴と
し、発光ダイオード素子が発する熱を空気の対流で発散
させ、発光ダイオード素子の温度上昇を抑えて発光効率
や輝度の低下が防止できるとともに発光ダイオード素子
の寿命が延ばせる。請求項11の発明は、請求項1の発
明において、上記発光ダイオード素子近傍の上記基板に
通風用の貫通孔を設けたことを特徴とし、貫通孔を通る
空気の対流で発光ダイオード素子からの熱を発散させ、
発光ダイオード素子の温度上昇を抑えて発光効率や輝度
の低下が防止できるとともに発光ダイオード素子の寿命
が延ばせる。
According to a tenth aspect of the present invention, in the first aspect of the present invention, the convex portion of the substrate is formed in multiple layers, and the heat generated by the light emitting diode element is radiated by convection of air, and It is possible to prevent a decrease in luminous efficiency and luminance by suppressing a rise in temperature and extend the life of the light emitting diode element. According to an eleventh aspect of the present invention, in the first aspect of the invention, a through hole for ventilation is provided in the substrate near the light emitting diode element, and heat from the light emitting diode element is generated by convection of air passing through the through hole. Diverge,
The temperature rise of the light emitting diode element can be suppressed to prevent a decrease in luminous efficiency and luminance, and the life of the light emitting diode element can be extended.

【0015】請求項12の発明は、請求項1の発明にお
いて、上記発光ダイオード素子を、当該発光ダイオード
素子のP型半導体とN型半導体とが上記基板の実装面に
対して略平行に並ぶように配設したことを特徴とし、発
光ダイオード素子の実装にワイヤボンディングを使用せ
ずに済み、発光効率を増大できるとともにワイヤの影が
生じるのを防ぎ、配光特性の設計自由度を拡げることが
できる。
According to a twelfth aspect of the present invention, in the first aspect of the present invention, the light emitting diode elements are arranged such that a P-type semiconductor and an N-type semiconductor of the light emitting diode elements are arranged substantially parallel to a mounting surface of the substrate. This feature eliminates the need for wire bonding to mount light-emitting diode elements, increases luminous efficiency, prevents shadows of wires, and increases the degree of freedom in designing light distribution characteristics. it can.

【0016】請求項13の発明は、請求項1の発明にお
いて、上記複数の発光ダイオード素子の発光方向に規則
性を持たせるように上記基板を形成したことを特徴と
し、基板の形状に応じて容易に配光特性を制御すること
ができる。請求項14の発明は、請求項1の発明におい
て、上記基板の両面に凹部又は凸部の少なくとも一方を
形成するとともに、上記各凹部又は凸部に各々1乃至複
数の発光ダイオード素子を配設したことを特徴とし、光
の照射範囲を基板周囲の略全方向に拡げることができ
る。
According to a thirteenth aspect of the present invention, in the first aspect of the present invention, the substrate is formed so as to have regularity in the light emitting direction of the plurality of light emitting diode elements. The light distribution characteristics can be easily controlled. According to a fourteenth aspect of the present invention, in the first aspect of the present invention, at least one of a concave portion and a convex portion is formed on both surfaces of the substrate, and one or a plurality of light emitting diode elements are disposed in each of the concave portions or the convex portions. With this feature, the light irradiation range can be extended in almost all directions around the substrate.

【0017】請求項15の発明は、請求項1の発明にお
いて、1乃至複数の上記凹部又は凸部を有し該凹部又は
凸部に発光色の異なる複数種の発光ダイオード素子を配
設してセルを構成し、該セルを複数個用いて形成される
ことを特徴とし、製造工程で発生した不良あるいは経年
劣化により一部の発光ダイオード素子が不点灯になった
場合、当該不点灯となった発光ダイオード素子が含まれ
るセルのみを交換することで安価に復旧させることがで
きる。また、混色あるいは配光特性の異なるセルを組み
合わせるようにすれば、装飾用のLED照明装置が簡単
な構成で実現できる。
According to a fifteenth aspect of the present invention, in the first aspect of the present invention, a plurality of types of light-emitting diode elements having one or more of the concave portions or the convex portions and having different emission colors are disposed in the concave portions or the convex portions. A cell is formed, and is formed by using a plurality of the cells, and when some of the light emitting diode elements are turned off due to a defect or aging deterioration occurring in a manufacturing process, the light is turned off. By replacing only the cell containing the light emitting diode element, it is possible to restore the cell at low cost. Also, by combining cells having different color mixing or light distribution characteristics, a decorative LED lighting device can be realized with a simple configuration.

【0018】請求項16の発明は、請求項1の発明にお
いて、上記発光ダイオード素子を微振動させる手段を上
記基板に設けたことを特徴とし、特定の発光ダイオード
素子を振動させることで任意の混色及び配光特性を得る
ことができ、また振動を制御することで人に不快感を与
える光のちらつき特性を改善することができる。請求項
17の発明は、請求項1の発明において、上記基板を撓
み自在に形成したことを特徴とし、基板を自在に曲げる
ことができて配光特性を容易に変えることが可能とな
り、しかも基板の弾性を利用してねじ等を使わずにハウ
ジング等に容易に取り付けることができる。
According to a sixteenth aspect of the present invention, in the first aspect of the present invention, a means for finely vibrating the light emitting diode element is provided on the substrate. In addition, light distribution characteristics can be obtained, and the flickering characteristics of light that gives a discomfort to a person can be improved by controlling the vibration. According to a seventeenth aspect of the present invention, in the first aspect of the present invention, the substrate is formed to be flexible, and the light distribution characteristic can be easily changed by freely bending the substrate. It can be easily attached to a housing or the like without using a screw or the like by utilizing the elasticity.

【0019】請求項18の発明は、請求項1の発明にお
いて、所定個数の上記発光ダイオード素子が含まれる寸
法単位に上記基板を切断自在としたことを特徴とし、必
要な照度が得られるような寸法に基板を切断して使用す
ることができて効率的であり、しかも基板を大きな単位
で作成することが可能でコストダウンが図れる。
An eighteenth aspect of the present invention is characterized in that, in the first aspect of the present invention, the substrate can be cut in a dimensional unit including a predetermined number of the light emitting diode elements, so that a required illuminance can be obtained. Since the substrate can be cut into dimensions and used, it is efficient, and the substrate can be made in large units, thereby reducing costs.

【0020】[0020]

【発明の実施の形態】(実施形態1)図1は本発明の実
施形態1を示す要部側面断面図、図2は同じく斜視図で
ある。図2に示すように矩形板状のMID(立体回路成
形品)基板10の片面に多数の凹部11が縦横に配設さ
れ、その凹部11の底面に3個の発光ダイオード素子
(以下、「LEDチップ」と略す。)1が実装されてい
る。
(Embodiment 1) FIG. 1 is a side sectional view of a main part showing Embodiment 1 of the present invention, and FIG. 2 is a perspective view of the same. As shown in FIG. 2, a large number of recesses 11 are arranged vertically and horizontally on one side of a rectangular plate-shaped MID (three-dimensional circuit molded product) substrate 10, and three light emitting diode elements (hereinafter, referred to as “LED”) are provided on the bottom surface of the recess 11. Abbreviated as “chip”).

【0021】次に上記MID基板(以下、単に「基板」
と呼ぶ。)10の製造工程について説明する。ポリイミ
ド、ポリエーテルイミド、ポリアミド、液晶ポリマ等の
電気絶縁性材料を用い、射出成形によって絶縁性基材を
形成する。そして、LEDチップ1の実装箇所に凹部1
1を設ける等して3次元の立体形状の絶縁性基材を形成
する。
Next, the MID substrate (hereinafter simply referred to as “substrate”)
Call. 10) Manufacturing steps will be described. An insulating substrate is formed by injection molding using an electrically insulating material such as polyimide, polyetherimide, polyamide, and liquid crystal polymer. Then, the concave portion 1 is provided at the mounting position of the LED chip 1.
1 to form an insulating base material having a three-dimensional three-dimensional shape.

【0022】この絶縁性基材をアルカリ脱脂した後、そ
の表面をプラズマ処理して表面の活性化及び微細な粗面
化を行う。その後、絶縁性基材の表面にスパッタリング
や真空蒸着等により、銅、銀、金、ニッケル、白金又は
パラジウム等の金属膜(めっき下地層)を形成する。こ
の金属層の厚みは0.1〜2〔μm〕程度が望ましい。
After the insulating base material is alkali-degreased, its surface is subjected to plasma treatment to activate the surface and finely roughen the surface. Thereafter, a metal film (plating underlayer) such as copper, silver, gold, nickel, platinum, or palladium is formed on the surface of the insulating base material by sputtering, vacuum deposition, or the like. The thickness of this metal layer is desirably about 0.1 to 2 [μm].

【0023】そして、レーザ等の電磁波を照射して上記
金属膜を除去する。このレーザとしては第2高調波YA
Gレーザ、YAGレーザ、エキシマレーザ等が好まし
く、ガルバノミラーでレーザ光を走査することにより、
絶縁性基材の表面のうち回路を形成する箇所である回路
部12以外の部分、すなわち回路部12間の絶縁スペー
スとなる非回路部13において照射されるものであり、
非回路部13の少なくとも回路部12との境界領域に非
回路部13のパターンに沿って照射することにより、非
回路部13の回路部12との境界領域の金属膜を除去す
るものである。
Then, the metal film is removed by irradiating an electromagnetic wave such as a laser. As this laser, the second harmonic YA
G laser, YAG laser, excimer laser, etc. are preferable, and by scanning laser light with a galvanometer mirror,
Irradiation is performed on a portion of the surface of the insulating base material other than the circuit portion 12 which is a portion where a circuit is formed, that is, on a non-circuit portion 13 serving as an insulating space between the circuit portions 12,
By irradiating at least the boundary region between the non-circuit portion 13 and the circuit portion 12 along the pattern of the non-circuit portion 13, the metal film in the boundary region between the non-circuit portion 13 and the circuit portion 12 is removed.

【0024】次に、回路部12に給電を行ない、例えば
硫酸銅めっき浴(硫酸銅80g/l、硫酸180g/
l、塩素、光沢剤)で電気銅めっきを行ない、例えばワ
ット浴(硫酸ニッケル270g/l、塩化ニッケル50
g/l、ホウ酸40g/l、光沢剤)で電気ニッケルめ
っき、電気金めっき(例えば、EEJA社製:商品名テ
ンペレックス401)等を行って所定厚の金属膜を形成
した回路基板(基板10)を得る。非回路部13の残存
した金属膜は、必要に応じてソフトエッチング等で除去
してもよい。
Next, power is supplied to the circuit section 12 and, for example, a copper sulfate plating bath (copper sulfate 80 g / l, sulfuric acid 180 g /
l, chlorine, brightener), for example, using a Watts bath (270 g / l nickel sulfate, 50% nickel chloride).
g / l, boric acid 40 g / l, brightener) by electro-nickel plating, electro-gold plating (for example, manufactured by EEJA: trade name: Temperex 401) or the like to form a circuit board (substrate) having a predetermined thickness of metal film Obtain 10). The remaining metal film of the non-circuit portion 13 may be removed by soft etching or the like as necessary.

【0025】上記方法により得られた基板10の凹部1
1にLEDチップ1を実装し、回路部12とLEDチッ
プ1を導電性接着剤で電気的に接合する(ダイボン
ド)。その後にLEDチップ1の上部電極と回路部12
とを金線14で接合する(ワイボンド)。なお、LED
チップ1が実装される凹部11の内面11aを鏡面に仕
上げて反射板を兼ねる構造とすることで、高輝度及び高
効率化を図ることができる。その次に凹部11内に透明
樹脂を充填してLEDチップ1を封止する。このとき上
記透明樹脂が凹部11の外に流れ出ないように、基板1
0に堰を設けることが望ましい。最後に基板10の表面
(実装面)に透明樹脂等から成る拡散板15を取り付け
て、本実施形態のLED照明装置のモジュールが完成す
る。
The concave portion 1 of the substrate 10 obtained by the above method
1, the LED chip 1 is mounted, and the circuit section 12 and the LED chip 1 are electrically bonded with a conductive adhesive (die bonding). Thereafter, the upper electrode of the LED chip 1 and the circuit portion 12
Are bonded by a gold wire 14 (Wybond). In addition, LED
By finishing the inner surface 11a of the concave portion 11 on which the chip 1 is mounted to a mirror surface and also serving as a reflecting plate, high luminance and high efficiency can be achieved. Next, the recess 11 is filled with a transparent resin to seal the LED chip 1. At this time, the substrate 1 is so protected that the transparent resin does not flow out of the recess 11.
It is desirable to provide a weir at zero. Finally, a diffusion plate 15 made of a transparent resin or the like is attached to the surface (mounting surface) of the substrate 10 to complete the module of the LED lighting device of the present embodiment.

【0026】上述のように複数個のLEDチップ1を凹
部11内に実装してMIDの基板10に立体的に配置す
るため、基板10の形状に応じて任意の配光特性が容易
に得られるとともに、ディスクリート型の発光ダイオー
ドを基板上に多数配設した従来例に比較してモジュール
の薄型化が可能となる。また、実装するLEDチップ1
に発光色の異なる1種類以上、望ましくは赤、青、緑の
3種類を少なくとも含む複数種のLEDチップ1を実装
するようにすれば、各LEDチップ1の発光色を混色さ
せて、モジュール全体の光に蛍光灯における白色や昼光
色のような微妙な色差を実現することができる。
As described above, since a plurality of LED chips 1 are mounted in the recesses 11 and are three-dimensionally arranged on the MID substrate 10, an arbitrary light distribution characteristic can be easily obtained according to the shape of the substrate 10. At the same time, the thickness of the module can be reduced as compared with a conventional example in which a large number of discrete light emitting diodes are arranged on a substrate. LED chip 1 to be mounted
If a plurality of types of LED chips 1 including at least one type having different emission colors, desirably at least three types of red, blue, and green are mounted on the LED module, the emission colors of the LED chips 1 are mixed, and the entire module is mounted. A subtle color difference such as white or daylight in a fluorescent lamp can be realized for this light.

【0027】なお、本実施形態では基板10に凹部11
を設けて3次元形状を形成したが、これに限定する主旨
ではなく、例えば基板10に凸部を設けて該凸部にLE
Dチップ1を実装したり、その他の種々の3次元形状に
基板10を形成することでLEDチップ1を立体的に配
置するようにすればよい。 (実施形態2)図3は本発明の実施形態2を示す側面断
面図である。本実施形態は、基板10の裏面(反実装
面)にLEDチップ1を含む回路のグランドとなる金属
板16を設け、凹部11の底面に露出させた金属板16
上にLEDチップ1を実装して、LEDチップ1が発す
る熱を金属板16により効率良く放熱させるようにした
点に特徴がある。なお、その他の構成については実施形
態1と共通であるから、共通する部分に同一の符号を付
して説明を省略する。
In this embodiment, the concave portion 11 is formed on the substrate 10.
Is formed to form a three-dimensional shape. However, the present invention is not limited to this. For example, a protrusion may be provided on the substrate 10 and LE may be provided on the protrusion.
The LED chip 1 may be arranged three-dimensionally by mounting the D chip 1 or forming the substrate 10 in various other three-dimensional shapes. (Embodiment 2) FIG. 3 is a side sectional view showing Embodiment 2 of the present invention. In this embodiment, a metal plate 16 serving as a ground of a circuit including the LED chip 1 is provided on the back surface (anti-mounting surface) of the substrate 10, and the metal plate 16 exposed on the bottom surface of the concave portion 11 is provided.
It is characterized in that the LED chip 1 is mounted thereon, and the heat generated by the LED chip 1 is efficiently radiated by the metal plate 16. Since other configurations are the same as those of the first embodiment, common portions are denoted by the same reference numerals and description thereof is omitted.

【0028】次に本実施形態の基板10の製造工程につ
いて、実施形態1と異なる点のみを説明する。適当な大
きさ、形状の金属板(例えば、銅板)16を金型の中に
入れてインサート射出成形によって絶縁性基材を形成す
る。電気絶縁性材料には実施形態1と同様にポリイミ
ド、ポリエーテルイミド、ポリアミド、液晶ポリマ等を
用いる。金属板16は予め板金加工、機械加工、科学的
なエッチング等によって立体形状に形成してもよい。
Next, with respect to the manufacturing process of the substrate 10 of the present embodiment, only differences from the first embodiment will be described. A metal plate (for example, a copper plate) 16 having an appropriate size and shape is placed in a mold, and an insulating base material is formed by insert injection molding. As in the first embodiment, polyimide, polyetherimide, polyamide, liquid crystal polymer, or the like is used as the electrically insulating material. The metal plate 16 may be previously formed into a three-dimensional shape by sheet metal processing, machining, scientific etching, or the like.

【0029】ここで、成形と同時にLEDチップ1が実
装される凹部11の底面から金属板16を露出させる
か、あるいは成形後にレーザ又はホーニングにより成形
樹脂を取り除くことで上記底面から金属板16を露出さ
せる。その絶縁性基材をアルカリ脱脂した後、金属板1
6を活性化するために表面を化学エッチングする。その
次に絶縁性基材の表面をプラズマ処理して表面の活性化
及び微細な粗面化を行う。以下実施形態1と同様に、金
属層を形成し回路部12並びに非回路部13を形成し
て、最終的に凹部11内にLEDチップ1を実装し且つ
透明樹脂で封止して、基板10の実装面に拡散板15を
取り付けることでLED照明装置のモジュールが完成す
る。
Here, the metal plate 16 is exposed from the bottom surface of the concave portion 11 in which the LED chip 1 is mounted at the same time as molding, or the molding plate is removed by laser or honing after molding to expose the metal plate 16 from the bottom surface. Let it. After the insulating substrate is alkali-degreased, the metal plate 1
The surface is chemically etched to activate 6. Then, the surface of the insulating base material is plasma-treated to activate the surface and to make the surface rough. Hereinafter, in the same manner as in the first embodiment, a metal layer is formed, a circuit portion 12 and a non-circuit portion 13 are formed, and finally, the LED chip 1 is mounted in the concave portion 11 and sealed with a transparent resin. The module of the LED lighting device is completed by attaching the diffusion plate 15 to the mounting surface of the LED lighting device.

【0030】上述のように本実施形態によれば、金属板
16を回路の共通のグランドとすることで金属板16に
LEDチップ1を実装して金属板16とLEDチップ1
とを直接接触させ、LEDチップ1から発生する熱を金
属板16によって効率良く放熱し取り除くことができ
る。そのため、LEDチップ1の温度上昇が防げ、発光
効率や輝度の低下を抑えることができ、また、LEDチ
ップ1の寿命も延ばすことができる。
As described above, according to the present embodiment, the LED chip 1 is mounted on the metal plate 16 by using the metal plate 16 as a common ground of the circuit, and the metal plate 16 and the LED chip 1
And the heat generated from the LED chip 1 can be efficiently radiated and removed by the metal plate 16. Therefore, a rise in the temperature of the LED chip 1 can be prevented, a decrease in luminous efficiency and luminance can be suppressed, and the life of the LED chip 1 can be extended.

【0031】(実施形態3)図4は本発明の実施形態3
を示す要部側面断面図、図5は同じく平面図である。本
実施形態は、基板10に実装されたLEDチップ1の周
囲に金属等から成り光を反射する放熱体17を配設し、
LEDチップ1の放熱用の放熱板17を反射板に兼用し
た点に特徴がある。なお、その他の構成については実施
形態1と共通であるから、共通する部分に同一の符号を
付して説明を省略する。
(Embodiment 3) FIG. 4 shows Embodiment 3 of the present invention.
And FIG. 5 is a plan view of the same. In the present embodiment, a radiator 17 made of metal or the like and reflecting light is disposed around the LED chip 1 mounted on the substrate 10,
It is characterized in that the heat radiating plate 17 for radiating the LED chip 1 is also used as a reflecting plate. Since other configurations are the same as those of the first embodiment, common portions are denoted by the same reference numerals and description thereof is omitted.

【0032】次に本実施形態の基板10の製造工程につ
いて、実施形態1と異なる点のみを説明する。適当な大
きさ、形状の放熱板(例えば、銅板)17を金型の中に
入れてインサート射出成形によって絶縁性基材を形成す
る。電気絶縁性材料には実施形態1と同様にポリイミ
ド、ポリエーテルイミド、ポリアミド、液晶ポリマ等を
用いる。放熱板17は予め板金加工、機械加工、科学的
なエッチング等によって反射板と成るような立体形状
(具体的にはLEDチップ1が実装される凹部17aが
多数配設された形状)に形成してある。
Next, with respect to the manufacturing process of the substrate 10 of the present embodiment, only differences from the first embodiment will be described. A heat sink (for example, a copper plate) 17 having an appropriate size and shape is placed in a mold, and an insulating base material is formed by insert injection molding. As in the first embodiment, polyimide, polyetherimide, polyamide, liquid crystal polymer, or the like is used as the electrically insulating material. The heat radiating plate 17 is formed in advance into a three-dimensional shape (specifically, a shape in which a large number of concave portions 17a on which the LED chips 1 are mounted) by using sheet metal processing, machining, scientific etching, or the like. It is.

【0033】その絶縁性基材をアルカリ脱脂した後、放
熱板17を活性化するために表面を化学エッチングす
る。その次に絶縁性基材の表面をプラズマ処理して表面
の活性化及び微細な粗面化を行う。以下、金属層を形成
し回路部12並びに非回路部13を形成して、最終的に
放熱板17の凹部17a内にLEDチップ1を実装し且
つ透明樹脂で封止して、基板10の実装面に拡散板15
を取り付けることでLED照明装置のモジュールが完成
する。
After the insulating base material is alkali-degreased, the surface thereof is chemically etched to activate the heat radiating plate 17. Then, the surface of the insulating base material is plasma-treated to activate the surface and to make the surface rough. Hereinafter, the metal layer is formed, the circuit portion 12 and the non-circuit portion 13 are formed, and finally, the LED chip 1 is mounted in the concave portion 17a of the heat sink 17 and sealed with a transparent resin to mount the substrate 10. Diffuser 15 on the surface
The module of the LED lighting device is completed by attaching the.

【0034】上述のように本実施形態によれば、反射板
を兼ねる放熱板17をLEDチップ1の周りに配設した
ことにより、放熱板17とLEDチップ1とを直接接触
させ、LEDチップ1から発生する熱を放熱板17によ
って効率良く放熱し取り除くことができる。そのため、
LEDチップ1の温度上昇が防げ、発光効率や輝度の低
下を抑えることができ、また、LEDチップ1の寿命も
延ばすことができる。
As described above, according to the present embodiment, since the heat radiating plate 17 also serving as the reflecting plate is disposed around the LED chip 1, the heat radiating plate 17 and the LED chip 1 are brought into direct contact with each other, Can be efficiently radiated and removed by the heat radiating plate 17. for that reason,
A rise in the temperature of the LED chip 1 can be prevented, a decrease in luminous efficiency and luminance can be suppressed, and the life of the LED chip 1 can be extended.

【0035】(実施形態4)図6は本発明の実施形態3
を示す要部側面断面図である。本実施形態は、基板10
の凹部11内面に光を反射する金属膜(例えば、銅膜)
を形成し、この金属膜をLEDチップ1の放熱を行う放
熱体18と反射板とに兼用した点に特徴がある。なお、
その他の構成については実施形態1と共通であるから、
共通する部分に同一の符号を付して説明を省略する。
(Embodiment 4) FIG. 6 shows Embodiment 3 of the present invention.
FIG. In the present embodiment, the substrate 10
Metal film (for example, copper film) reflecting light on the inner surface of the concave portion 11
This is characterized in that this metal film is used also as a radiator 18 for radiating heat of the LED chip 1 and a reflector. In addition,
Since other configurations are common to the first embodiment,
Common parts are denoted by the same reference numerals, and description thereof is omitted.

【0036】次に本実施形態の基板10の製造工程につ
いて、実施形態1と異なる点のみを説明する。ポリイミ
ド、ポリエーテルイミド、ポリアミド、液晶ポリマ等の
電気絶縁性材料を用い、射出成形によって絶縁性基材を
形成する。そして、LEDチップ1の実装箇所に凹部1
1を設ける等して3次元の立体形状の絶縁性基材を形成
する。この絶縁性基材をアルカリ脱脂した後、その表面
をプラズマ処理して表面の活性化及び微細な粗面化を行
う。その後、絶縁性基材の表面にスパッタリングや真空
蒸着等により、銅、銀、金、ニッケル、白金又はパラジ
ウム等の金属膜(めっき下地層)を形成する。
Next, with respect to the manufacturing process of the substrate 10 of the present embodiment, only differences from the first embodiment will be described. An insulating substrate is formed by injection molding using an electrically insulating material such as polyimide, polyetherimide, polyamide, and liquid crystal polymer. Then, the concave portion 1 is provided at the mounting position of the LED chip 1.
1 to form an insulating base material having a three-dimensional three-dimensional shape. After alkali-degreasing the insulating base material, the surface is subjected to plasma treatment to activate the surface and finely roughen the surface. Thereafter, a metal film (plating underlayer) such as copper, silver, gold, nickel, platinum, or palladium is formed on the surface of the insulating base material by sputtering, vacuum deposition, or the like.

【0037】そして、レーザ等の電磁波を照射して上記
金属膜を除去して配線パターンを形成する(レーザパタ
ーニング)のであるが、この時凹部11の内面に形成さ
れている金属膜(放熱体18)の全体が回路部12を構
成するように金属膜を除去する。以下、放熱体18が形
成された凹部11の底面にLEDチップ1を実装し且つ
透明樹脂で封止して、基板10の実装面に拡散板15を
取り付けることでLED照明装置のモジュールが完成す
る。
Then, the metal film is removed by irradiating an electromagnetic wave such as a laser to form a wiring pattern (laser patterning). At this time, the metal film (radiator 18) formed on the inner surface of the concave portion 11 is formed. The metal film is removed so that the whole of () constitutes the circuit section 12. Hereinafter, the LED chip 1 is mounted on the bottom surface of the recess 11 in which the heat radiator 18 is formed, sealed with a transparent resin, and the diffusion plate 15 is mounted on the mounting surface of the substrate 10 to complete the module of the LED lighting device. .

【0038】上述のように本実施形態においても、金属
膜(金属めっき)を放熱体18と反射板とに兼用してL
EDチップ1の周りに配設したことにより、放熱体18
とLEDチップ1とを直接接触させ、LEDチップ1か
ら発生する熱を放熱体18によって効率良く放熱し取り
除くことができる。そのため、LEDチップ1の温度上
昇が防げ、発光効率や輝度の低下を抑えることができ、
また、LEDチップ1の寿命も延ばすことができる。
As described above, also in this embodiment, the metal film (metal plating) is used as the heat radiator 18 and the reflection plate, and
The arrangement around the ED chip 1 allows the heat radiator 18
And the LED chip 1 are brought into direct contact with each other, and the heat generated from the LED chip 1 can be efficiently radiated and removed by the radiator 18. Therefore, a rise in the temperature of the LED chip 1 can be prevented, and a decrease in luminous efficiency and luminance can be suppressed.
In addition, the life of the LED chip 1 can be extended.

【0039】(実施形態5)図7は本発明の実施形態5
を示す要部側面断面図である。本実施形態では、多数の
凹部11が片面に形成されたMID基板10の反対側の
面に銅張金属基板(以下、単に「金属基板」と呼ぶ。)
19を設け、この金属基板19の導電層19aをLED
チップ1のグランドとするとともに、LEDチップ1の
発光を制御する制御回路を構成するIC、抵抗、コンデ
ンサ等の回路素子(チップ部品)20を金属基板19の
絶縁層19bに実装した点に特徴がある。なお、その他
の構成については実施形態1と共通であるから、共通す
る部分に同一の符号を付して説明を省略する。
(Embodiment 5) FIG. 7 shows Embodiment 5 of the present invention.
FIG. In the present embodiment, a copper-clad metal substrate (hereinafter simply referred to as a “metal substrate”) is provided on a surface on the opposite side of the MID substrate 10 in which a large number of concave portions 11 are formed on one surface.
The conductive layer 19a of the metal substrate 19 is
A feature is that a circuit element (chip component) 20 such as an IC, a resistor, and a capacitor, which constitutes a control circuit for controlling light emission of the LED chip 1, is mounted on an insulating layer 19 b of a metal substrate 19 while being used as a ground for the chip 1. is there. Since other configurations are the same as those of the first embodiment, common portions are denoted by the same reference numerals and description thereof is omitted.

【0040】次に本実施形態の基板10の製造工程につ
いて簡単に説明する。まず金属基板19を金型の中に入
れてインサート射出成形によって絶縁性基材を形成す
る。電気絶縁性材料には実施形態1と同様にポリイミ
ド、ポリエーテルイミド、ポリアミド、液晶ポリマ等を
用いる。その絶縁性基材をアルカリ脱脂した後、絶縁性
基材の表面をプラズマ処理して表面の活性化及び微細な
粗面化を行う。その後は、金属層を形成し回路部12並
びに非回路部13を形成した後、基板10の凹部11底
面に露出した金属基板19の導電層19a上にLEDチ
ップ1を実装し且つ透明樹脂で封止する。
Next, a brief description will be given of a manufacturing process of the substrate 10 of the present embodiment. First, the metal substrate 19 is placed in a mold and an insulating base material is formed by insert injection molding. As in the first embodiment, polyimide, polyetherimide, polyamide, liquid crystal polymer, or the like is used as the electrically insulating material. After the insulating base material is alkali-degreased, the surface of the insulating base material is plasma-treated to activate the surface and finely roughen the surface. Thereafter, after forming a metal layer to form the circuit portion 12 and the non-circuit portion 13, the LED chip 1 is mounted on the conductive layer 19a of the metal substrate 19 exposed on the bottom surface of the concave portion 11 of the substrate 10, and sealed with a transparent resin. Stop.

【0041】ここで、本実施形態では凹部11に実装さ
れたLEDチップ1を透明樹脂で封止した後に、金属基
板19の絶縁層19bに制御回路を形成するための回路
(配線)パターンを形成する。このパターン形成方法
は、プリント基板の一般的な形成方法である露光・エッ
チング法でもレーザパターニング法の何れでもよい。そ
して、上記回路パターン形成後にIC、抵抗、コンデン
サ等の回路素子(チップ部品)20を半田実装すること
でLED照明装置のモジュールが完成する。
Here, in this embodiment, after sealing the LED chip 1 mounted in the concave portion 11 with a transparent resin, a circuit (wiring) pattern for forming a control circuit is formed on the insulating layer 19 b of the metal substrate 19. I do. This pattern forming method may be any of a general method of forming a printed circuit board, such as an exposure / etching method or a laser patterning method. Then, after the circuit pattern is formed, a circuit element (chip component) 20 such as an IC, a resistor, or a capacitor is mounted by soldering to complete the module of the LED lighting device.

【0042】上述のように本実施形態によれば、基板1
0にインサート成形された銅張金属板19の導電層19
aにLEDチップ1を実装してグランドとすることによ
り、金属基板19とLEDチップ1とを直接接触させて
LEDチップ1から発する熱を金属基板19により効率
良く放熱し取り除くことができる。そのため、LEDチ
ップ1の温度上昇が防げ、発光効率や輝度の低下を抑え
ることができ、また、LEDチップ1の寿命も延ばすこ
とができる。しかも、金属基板19の絶縁層19bにL
EDチップ1の発光を制御する制御回路等の回路素子2
0を実装するようにしたため、モジュールの小型化が可
能になるとともにノイズに対する回路素子20のシール
ドも図れるという利点がある。
According to the present embodiment as described above, the substrate 1
Conductive layer 19 of copper-clad metal plate 19 insert-molded
By mounting the LED chip 1 on a and making it ground, the metal substrate 19 and the LED chip 1 are brought into direct contact, and the heat generated from the LED chip 1 can be efficiently radiated and removed by the metal substrate 19. Therefore, a rise in the temperature of the LED chip 1 can be prevented, a decrease in luminous efficiency and luminance can be suppressed, and the life of the LED chip 1 can be extended. In addition, the insulating layer 19b of the metal substrate 19 has L
Circuit element 2 such as a control circuit for controlling light emission of ED chip 1
0 is mounted, so that the module can be reduced in size and the circuit element 20 can be shielded against noise.

【0043】(実施形態6)図8は本発明の実施形態6
を示す要部側面断面図である。本実施形態は、表面に凹
凸を設けた放熱体(金属板)21の片面にMID基板1
0を形成し、この基板10の表面に形成された凹部11
内の底面及び側面にLEDチップ1を実装した点に特徴
がある。
(Embodiment 6) FIG. 8 shows Embodiment 6 of the present invention.
FIG. In the present embodiment, the MID substrate 1 is provided on one surface of a heat radiator (metal plate) 21 having irregularities on the surface.
0, and a concave portion 11 formed on the surface of the substrate 10
It is characterized in that the LED chip 1 is mounted on the bottom and side surfaces inside.

【0044】次に本実施形態の基板10の製造工程につ
いて簡単に説明する。表面に凹凸を形成した金属板(例
えば、銅板)21を金型の中に入れてインサート射出成
形によって基板10を形成する。電気絶縁性材料には実
施形態1と同様にポリイミド、ポリエーテルイミド、ポ
リアミド、液晶ポリマ等を用いる。金属板21は予め板
金加工、機械加工、科学的なエッチング等によって凹凸
を有する立体形成(具体的にはLEDチップ1が実装さ
れる凹部11に対応した凹部21aが多数形成してあ
る。
Next, the manufacturing process of the substrate 10 of the present embodiment will be briefly described. A metal plate (for example, a copper plate) 21 having an uneven surface is placed in a mold and the substrate 10 is formed by insert injection molding. As in the first embodiment, polyimide, polyetherimide, polyamide, liquid crystal polymer, or the like is used as the electrically insulating material. The metal plate 21 is formed in advance into a three-dimensional structure having irregularities by sheet metal processing, machining, scientific etching, or the like (specifically, a large number of concave portions 21a corresponding to the concave portions 11 on which the LED chips 1 are mounted).

【0045】その成形基板をアルカリ脱脂した後、金属
板21を活性化するために表面を化学エッチングする。
その次に絶縁性基材の表面をプラズマ処理して表面の活
性化及び微細な粗面化を行う。以下、金属層を形成し回
路部12並びに非回路部13を形成する。そして、最終
的には基板10の凹部11内にLEDチップ1を実装し
且つ透明樹脂で封止して、基板10の実装面に拡散板1
5を取り付けることでLED照明装置のモジュールが完
成する。
After the molded substrate is degreased with an alkali, the surface is chemically etched to activate the metal plate 21.
Then, the surface of the insulating base material is plasma-treated to activate the surface and to make the surface rough. Hereinafter, a circuit layer 12 and a non-circuit section 13 are formed by forming a metal layer. Finally, the LED chip 1 is mounted in the concave portion 11 of the substrate 10 and sealed with a transparent resin, and the diffusion plate 1 is mounted on the mounting surface of the substrate 10.
By attaching 5, the module of the LED lighting device is completed.

【0046】上述のように本実施形態によれば、表面に
凹凸を設けることで金属板21の表面積を増やしたこと
により、LEDチップ1から発生する熱を効率良く放熱
し取り除くことができる。そのため、LEDチップ1の
温度上昇が防げ、発光効率や輝度の低下を抑えることが
でき、また、LEDチップ1の寿命も延ばすことができ
る。
As described above, according to the present embodiment, since the surface area of the metal plate 21 is increased by providing irregularities on the surface, the heat generated from the LED chip 1 can be efficiently radiated and removed. Therefore, a rise in the temperature of the LED chip 1 can be prevented, a decrease in luminous efficiency and luminance can be suppressed, and the life of the LED chip 1 can be extended.

【0047】(実施形態7)図9は本発明の実施形態7
を示す要部側面断面図である。本実施形態は、LEDチ
ップ1の少なくとも一部分に接触する放熱フィン22を
備えた点に特徴がある。放熱フィン22はアルミダイカ
スト製であって、金型の中に入れてインサート射出成形
により基板10と一体に形成される。電気絶縁性材料に
は実施形態1と同様にポリイミド、ポリエーテルイミ
ド、ポリアミド、液晶ポリマ等を用いる。その成形基板
をアルカリ脱脂した後、放熱フィン22を活性化するた
めに表面を化学エッチングする。その次に絶縁性基材の
表面をプラズマ処理して表面の活性化及び微細な粗面化
を行う。以下、金属層を形成し回路部12並びに非回路
部13を形成する。そして、最終的に基板10の凹部1
1内にLEDチップ1を実装し且つ透明樹脂で封止し
て、基板10の実装面に拡散板15を取り付けることで
LED照明装置のモジュールが完成する。ここで、凹部
11内に実装したLEDチップ1の一部が放熱フィン2
2と接触させてある。
(Embodiment 7) FIG. 9 shows Embodiment 7 of the present invention.
FIG. The present embodiment is characterized in that a radiation fin 22 that contacts at least a part of the LED chip 1 is provided. The radiating fins 22 are made of aluminum die-cast, and are formed integrally with the substrate 10 by insert injection molding in a mold. As in the first embodiment, polyimide, polyetherimide, polyamide, liquid crystal polymer, or the like is used as the electrically insulating material. After the molded substrate is degreased with an alkali, the surface is chemically etched to activate the radiation fins 22. Then, the surface of the insulating base material is plasma-treated to activate the surface and to make the surface rough. Hereinafter, a circuit layer 12 and a non-circuit section 13 are formed by forming a metal layer. And finally, the concave portion 1 of the substrate 10
1, the LED chip 1 is mounted therein, sealed with a transparent resin, and a diffusion plate 15 is attached to the mounting surface of the substrate 10, thereby completing the module of the LED lighting device. Here, a part of the LED chip 1 mounted in the recess 11 is
2 contacted.

【0048】上述のように本実施形態によれば、LED
チップ1の少なくとも一部に接触する放熱フィン22を
基板10と一体成形したことにより、LEDチップ1か
ら発生する熱を放熱フィン22により効率良く放熱し取
り除くことができる。そのため、LEDチップ1の温度
上昇が防げ、発光効率や輝度の低下を抑えることがで
き、また、LEDチップ1の寿命も延ばすことができ
る。
As described above, according to the present embodiment, the LED
Since the heat radiation fins 22 that contact at least a part of the chip 1 are formed integrally with the substrate 10, the heat generated from the LED chip 1 can be efficiently radiated and removed by the heat radiation fins 22. Therefore, a rise in the temperature of the LED chip 1 can be prevented, a decrease in luminous efficiency and luminance can be suppressed, and the life of the LED chip 1 can be extended.

【0049】(実施形態8)図10は本発明の実施形態
8を示す要部側面断面図である。MIDの基板23の片
面に多数の凸部24が縦横に配設され、その凸部24の
頂点にLEDチップ1が実装してある。上記基板23の
製造工程について簡単に説明する。ポリイミド、ポリエ
ーテルイミド、ポリアミド、液晶ポリマ等の電気絶縁性
材料を用い、射出成形によって絶縁性基材を形成する。
そして、LEDチップ1の実装箇所に凸部24を形成す
るとともに凸部24内にスルーホール25を形成する。
(Eighth Embodiment) FIG. 10 is a side sectional view showing a main part of an eighth embodiment of the present invention. A large number of protrusions 24 are arranged vertically and horizontally on one side of a substrate 23 of the MID, and the LED chip 1 is mounted on the top of the protrusions 24. The manufacturing process of the substrate 23 will be briefly described. An insulating substrate is formed by injection molding using an electrically insulating material such as polyimide, polyetherimide, polyamide, and liquid crystal polymer.
Then, the protrusion 24 is formed at the mounting position of the LED chip 1 and the through hole 25 is formed in the protrusion 24.

【0050】この絶縁性基材をアルカリ脱脂した後、そ
の表面をプラズマ処理して表面の活性化及び微細な粗面
化を行う。その後、絶縁性基材の表面にスパッタリング
や真空蒸着等により、銅、銀、金、ニッケル、白金又は
パラジウム等の金属膜(めっき下地層)を形成する。そ
して、レーザ等の電磁波を照射して非回路部の回路部と
の境界領域の金属膜を除去する。次に、回路部に給電を
行ない、例えば硫酸銅めっき浴で電気銅めっきを行なて
所定厚の金属膜を形成した回路基板(基板23)を得
る。そして、凸部24に形成したスルーホール25内に
放熱ピン26を圧入する。
After the insulating base material is alkali-degreased, its surface is subjected to plasma treatment to activate the surface and to make it finely roughened. Thereafter, a metal film (plating underlayer) such as copper, silver, gold, nickel, platinum, or palladium is formed on the surface of the insulating base material by sputtering, vacuum deposition, or the like. Then, the metal film in the boundary region between the non-circuit portion and the circuit portion is removed by irradiating an electromagnetic wave such as a laser. Next, power is supplied to the circuit portion, and for example, electrolytic copper plating is performed in a copper sulfate plating bath to obtain a circuit board (substrate 23) on which a metal film having a predetermined thickness is formed. Then, the heat radiating pins 26 are press-fitted into the through holes 25 formed in the convex portions 24.

【0051】上記方法により得られた基板23の凸部2
4にLEDチップ1を実装し、回路部(放熱ピン26を
含む)とLEDチップ1を導電性接着剤で電気的に接合
する(ダイボンド)。その後にLEDチップ1の上部電
極と回路部とを金線で接合する(ワイボンド)。なお、
LEDチップ1が実装される凸部24の周囲斜面24a
を鏡面に仕上げて反射板を兼ねる構造とすることで、高
輝度及び高効率化を図ることができる。その次に透明樹
脂によりLEDチップ1を封止する。最後に基板10の
表面(実装面)に透明樹脂等から成る拡散板を取り付け
て、本実施形態のLED照明装置のモジュールが完成す
る。
The convex portion 2 of the substrate 23 obtained by the above method
4, the LED chip 1 is mounted, and the circuit portion (including the heat radiation pins 26) and the LED chip 1 are electrically bonded with a conductive adhesive (die bonding). Thereafter, the upper electrode of the LED chip 1 and the circuit portion are joined by a gold wire (Wybond). In addition,
Slope 24a around convex portion 24 on which LED chip 1 is mounted
By finishing the mirror as a mirror and having a structure that also serves as a reflector, high brightness and high efficiency can be achieved. Next, the LED chip 1 is sealed with a transparent resin. Finally, a diffusion plate made of a transparent resin or the like is attached to the surface (mounting surface) of the substrate 10 to complete the module of the LED lighting device of the present embodiment.

【0052】上述のように本実施形態によれば、LED
チップ1の下の基板24内に少なくともLEDチップ1
の一部に接触する放熱ピン26を設けたことにより、L
EDチップ1から発生する熱を放熱ピン26により効率
良く放熱し取り除くことができる。そのため、LEDチ
ップ1の温度上昇が防げ、発光効率や輝度の低下を抑え
ることができ、また、LEDチップ1の寿命も延ばすこ
とができる。
As described above, according to the present embodiment, the LED
At least the LED chip 1 in the substrate 24 under the chip 1
The heat radiation pin 26 that contacts a part of the
The heat generated from the ED chip 1 can be efficiently radiated by the heat radiation pins 26 and removed. Therefore, a rise in the temperature of the LED chip 1 can be prevented, a decrease in luminous efficiency and luminance can be suppressed, and the life of the LED chip 1 can be extended.

【0053】(実施形態9)図11は本発明の実施形態
9を示す要部側面図である。本実施形態は、MIDの基
板27に多層の凸部28を形成して基板27全体を所謂
タワー形状(螺旋形状)とし、この凸部28の各層に各
々複数個のLEDチップ1を配設するようにした点に特
徴がある。
(Embodiment 9) FIG. 11 is a side view of a main part showing Embodiment 9 of the present invention. In the present embodiment, a multilayer convex portion 28 is formed on an MID substrate 27 so that the entire substrate 27 has a so-called tower shape (spiral shape), and a plurality of LED chips 1 are arranged on each layer of the convex portion 28. There is a characteristic in the point that it did.

【0054】基板27はタワー形状に形成された金型を
用いて射出成形される。なお、以降の工程については実
施形態1と共通するので説明を省略する。但し、基板2
7にLEDチップ1を実装した後で合成樹脂による封止
は行わない。ところで、通電によりLEDチップ1の温
度が上昇するとLEDチップ1の近傍の空気が温められ
て上昇気流が発生し、基板27の凸部28に沿って空気
が上昇するとともに、基板27の下方からは温度の低い
空気が流れ込むことでLEDチップ1の熱が奪われて冷
却される。
The substrate 27 is injection molded using a mold formed in a tower shape. Note that the subsequent steps are the same as in the first embodiment, and a description thereof will be omitted. However, substrate 2
After the LED chip 1 is mounted on 7, sealing with a synthetic resin is not performed. By the way, when the temperature of the LED chip 1 rises due to energization, the air near the LED chip 1 is warmed and an ascending airflow is generated, so that the air rises along the convex portion 28 of the board 27 and the air from below the board 27 When the low-temperature air flows in, the LED chip 1 is deprived of heat and cooled.

【0055】上述のように本実施形態では、MIDの基
板27に多層の凸部28を形成して基板27全体を所謂
タワー形状(螺旋形状)とし、この凸部28の各層に各
々複数個のLEDチップ1を配設するようにしたことに
より、LEDチップ1から発する熱を空気の気流(対
流)で発散させてLEDチップ1の温度上昇を防ぐこと
ができる。そのため、LEDチップ1の発光効率や輝度
の低下を抑えることができ、また、寿命も延ばすことが
できる。
As described above, in the present embodiment, the MID substrate 27 is formed with a multi-layered convex portion 28 to make the entire substrate 27 a so-called tower shape (spiral shape). By arranging the LED chip 1, the heat generated from the LED chip 1 can be radiated by the airflow (convection) of the air to prevent the temperature of the LED chip 1 from rising. Therefore, it is possible to suppress a decrease in the luminous efficiency and luminance of the LED chip 1, and to prolong the life.

【0056】(実施形態10)図12は本発明の実施形
態10を示す要部側面図である。本実施形態は、片面に
多数の凹部30が形成された基板29に対し、LEDチ
ップ1が実装される上記凹部30と基板29の裏面側と
を貫通する通風用の貫通孔(スルーホール)31を設け
た点に特徴がある。
(Embodiment 10) FIG. 12 is a side view of a main part showing Embodiment 10 of the present invention. In the present embodiment, a through hole (through hole) 31 for ventilation that penetrates through the concave portion 30 on which the LED chip 1 is mounted and the back surface side of the substrate 29 with respect to the substrate 29 having a large number of concave portions 30 formed on one surface. The feature is that it is provided.

【0057】MIDの基板29の成形時に貫通孔31を
形成する。なお、以降の工程については実施形態1と共
通するので説明を省略する。但し、基板29の凹部30
にLEDチップ1を実装した後で合成樹脂による封止は
行わない。而して、通電によりLEDチップ1の温度が
上昇するとLEDチップ1の近傍の空気が温められて上
昇気流が発生する。そのため、貫通孔31を通して基板
29の反対側から温度の低い空気が流れ込み、LEDチ
ップ1の熱が奪われて冷却される。
A through hole 31 is formed when the MID substrate 29 is formed. Note that the subsequent steps are the same as in the first embodiment, and a description thereof will be omitted. However, the concave portion 30 of the substrate 29
After the LED chip 1 is mounted on the substrate, sealing with a synthetic resin is not performed. Thus, when the temperature of the LED chip 1 rises due to energization, the air near the LED chip 1 is heated, and an ascending airflow is generated. Therefore, low-temperature air flows from the opposite side of the substrate 29 through the through hole 31, and the heat of the LED chip 1 is taken away and cooled.

【0058】上述のように本実施形態では、LEDチッ
プ1が実装される凹部30と基板29の裏面側とを貫通
する通風用の貫通孔31を設けたことにより、LEDチ
ップ1から発する熱を空気の気流(対流)で発散させて
LEDチップ1の温度上昇を防ぐことができる。そのた
め、LEDチップ1の発光効率や輝度の低下を抑えるこ
とができ、また、寿命も延ばすことができる。
As described above, in this embodiment, the heat generated from the LED chip 1 is provided by providing the ventilation through-hole 31 penetrating the recess 30 in which the LED chip 1 is mounted and the back surface of the substrate 29. The LED chip 1 can be prevented from rising in temperature by diverging by air current (convection). Therefore, it is possible to suppress a decrease in the luminous efficiency and luminance of the LED chip 1, and to prolong the life.

【0059】(実施形態11)ところで、図15に示す
ようにLEDチップ1はP型半導体1aとN型半導体1
bとの接合界面における電子の移動時に発光し、接合界
面を含む平面内で全方向に光が照射されるが、基板10
へのLEDチップ1の実装方向や金線(ワイヤ)14に
光が遮られて光の照射方向が制約を受けたり、影ができ
てしまう。
(Embodiment 11) As shown in FIG. 15, the LED chip 1 has a P-type semiconductor 1a and an N-type semiconductor 1a.
b, light is emitted when electrons move at the bonding interface, and light is emitted in all directions within a plane including the bonding interface.
The light is blocked by the mounting direction of the LED chip 1 and the gold wire (wire) 14 so that the light irradiation direction is restricted or a shadow is formed.

【0060】そこで、本実施形態では、図13に示すよ
うにLEDチップ1をP型半導体1aとN型半導体1b
とが基板10の実装面に対して略平行に並ぶように配設
した点に特徴があり、その他の構成は実施形態1と共通
であるので説明は省略する。図13に示すようにLED
チップ1が実装される部分は周囲より一段高く形成され
ており、その両側にパッド32が形成してあって、これ
らパッド32とLEDチップ1のP型半導体1a及びN
型半導体1bとの接続は半田や導電性接着剤33により
行われる。ここでLEDチップ1を1段高く形成された
部分に実装しているため、上記接続時の短絡事故が防止
できる。なお、LEDチップ1は例えば0.3〔mm〕
の立方体のものが望ましい。
Therefore, in this embodiment, as shown in FIG. 13, the LED chip 1 is made up of a P-type semiconductor 1a and an N-type semiconductor 1b.
Are arranged so as to be substantially parallel to the mounting surface of the substrate 10, and the other configuration is the same as that of the first embodiment. LED as shown in FIG.
The portion on which the chip 1 is mounted is formed one step higher than the surroundings, and pads 32 are formed on both sides thereof. These pads 32 and the P-type semiconductors 1a and N of the LED chip 1 are formed.
The connection with the mold semiconductor 1b is made by solder or a conductive adhesive 33. Here, since the LED chip 1 is mounted on a portion formed one step higher, a short circuit accident at the time of the connection can be prevented. The LED chip 1 has, for example, 0.3 [mm].
Cubes are desirable.

【0061】上述のように本実施形態によれば、LED
チップ1をP型半導体1aとN型半導体1bとが基板1
0の実装面に対して略平行に並ぶように配設したことに
より、両者の接合面が基板10の表面と略直交すること
になり、LEDチップ1から発する光を基板10に対し
て垂直な方向に照射するため、金線(ワイヤ)14で光
が遮られて影ができることもなく、LEDチップ1の発
光効率を高めることができる。
According to the present embodiment as described above, the LED
The chip 1 is composed of a P-type semiconductor 1a and an N-type semiconductor 1b.
By arranging them so as to be substantially parallel to the mounting surface of the substrate 10, the joint surface between them is substantially orthogonal to the surface of the substrate 10, and the light emitted from the LED chip 1 is perpendicular to the substrate 10. Since the light is radiated in the direction, the light is not blocked by the gold wire (wire) 14 and a shadow is not formed, and the luminous efficiency of the LED chip 1 can be increased.

【0062】なお、図14に示すようにフィレット部分
に凹所33を設け、この凹所33内で導電性接着剤等に
よりLEDチップ1を接合するようにしても、電気的な
接続時における上記短絡の発生が防止できる。上述のよ
うに本実施形態によれば、LEDチップ1をP型半導体
1aとN型半導体1bとが基板10の実装面に対して略
平行に並ぶように配設したことにより、LEDチップ1
の発光方向が基板10に対して略平行とすることがで
き、ワイヤ(金線)14の影がなくなってLEDチップ
1の発光効率を増大させることができる。
As shown in FIG. 14, a concave portion 33 is provided in the fillet portion, and the LED chip 1 is joined in the concave portion 33 by a conductive adhesive or the like. The occurrence of a short circuit can be prevented. As described above, according to the present embodiment, the LED chip 1 is arranged such that the P-type semiconductor 1a and the N-type semiconductor 1b are arranged substantially in parallel to the mounting surface of the substrate 10, so that the LED chip 1
Can be made substantially parallel to the substrate 10, and the shadow of the wire (gold wire) 14 is eliminated, so that the luminous efficiency of the LED chip 1 can be increased.

【0063】(実施形態12)図16は本発明の実施形
態12を示す要部側面断面図である。本実施形態では、
複数のLEDチップ1のの発光方向に規則性を持たせる
ように基板を形成した点に特徴があり、図16に示すよ
うに基板34の片面(実装面)を断面鋸歯状に形成し、
各々の斜面34aにLEDチップ1が実装してある。
(Twelfth Embodiment) FIG. 16 is a side sectional view showing a main part of a twelfth embodiment of the present invention. In this embodiment,
It is characterized in that the substrate is formed so as to have regularity in the light emitting direction of the plurality of LED chips 1, and as shown in FIG. 16, one surface (mounting surface) of the substrate 34 is formed in a saw-tooth cross section.
The LED chip 1 is mounted on each slope 34a.

【0064】一般にLEDチップ1の基板34に対する
実装向きと発光方向とには規則性があるが、MIDの基
板34を任意の立体形状に形成することにより、所望の
配光や集光特性を得ることができる。そして、完成した
モジュールを、実装されたLEDチップ1の方向が規則
正しく一方向を向くように形成してあるので、光が一方
向の配光になり発光効率がよくなるという利点がある。
Generally, the mounting direction of the LED chip 1 with respect to the substrate 34 and the light emitting direction have regularity. However, by forming the MID substrate 34 into an arbitrary three-dimensional shape, desired light distribution and light collecting characteristics are obtained. be able to. Since the completed module is formed so that the direction of the mounted LED chip 1 is regularly directed in one direction, there is an advantage that light is distributed in one direction and light emission efficiency is improved.

【0065】上述のように本実施形態によれば、複数の
LEDチップ1の発光方向に規則性を持たせるように基
板34を形成したので、基板34の形状に応じて容易に
配光特性を制御することができ、しかもモジュール全体
を考慮した集配光で利用率がよいという利点がある。さ
らに、基板34の形状によって配光制御が可能であるた
め、別途レンズ等の光学手段を設ける必要がないという
利点がある。
As described above, according to the present embodiment, since the substrate 34 is formed so as to have regularity in the light emitting direction of the plurality of LED chips 1, the light distribution characteristics can be easily adjusted according to the shape of the substrate 34. There is an advantage that the light can be controlled, and the light collection and distribution considering the entire module has a high utilization factor. Further, since the light distribution can be controlled depending on the shape of the substrate 34, there is an advantage that it is not necessary to separately provide an optical unit such as a lens.

【0066】(実施形態13)ところで、従来からある
ディスクリート型の発光ダイオードでは、例えばLED
チップを封止するエポキシ樹脂を砲弾形に形成すること
でレンズの役割を担っており、ほぼ360度の全方向に
光を照射することができるが、基板に複数の発光ダイオ
ードを実装する場合には基板に遮られて全周囲方向に光
を照射することが困難になる。
(Embodiment 13) By the way, in a conventional discrete light emitting diode, for example, an LED
The epoxy resin that seals the chip has a shell shape and plays the role of a lens, and can irradiate light in almost all directions of 360 degrees. However, when mounting a plurality of light emitting diodes on a substrate, Is blocked by the substrate, making it difficult to irradiate light in all directions.

【0067】そこで、本実施形態では、図17に示すよ
うにMIDの基板35の表裏両面に各々凹部36を複数
形成し、各凹部36の底面にLEDチップ1を実装した
点に特徴があり、これにより基板35の周囲のほぼ全方
向に光を照射することができる。なお、基板35の製造
方法は実施形態1と共通であるから説明は省略する。上
述のように本実施形態によれば、基板35の表裏両面に
各々凹部36を複数形成し、各凹部36の底面にLED
チップ1を実装したことにより、略全方向に光を照射す
ることができ、従来の蛍光灯や白熱灯と同じように使用
することができる。また、基板35に対するLEDチッ
プ1の実装密度を増大させて全体の輝度を向上させるこ
とができ、さらには配光設計の自由度が大きくなるとい
う利点がある。
Therefore, the present embodiment is characterized in that a plurality of recesses 36 are formed on both the front and back surfaces of the MID substrate 35 as shown in FIG. 17, and the LED chip 1 is mounted on the bottom surface of each recess 36. Thus, light can be irradiated to almost all directions around the substrate 35. Note that the method of manufacturing the substrate 35 is the same as that of the first embodiment, and a description thereof will be omitted. As described above, according to the present embodiment, a plurality of recesses 36 are formed on each of the front and back surfaces of the substrate 35, and the LED is provided on the bottom surface of each recess 36.
By mounting the chip 1, light can be emitted in almost all directions, and it can be used in the same manner as a conventional fluorescent lamp or incandescent lamp. Further, there is an advantage that the mounting density of the LED chips 1 on the substrate 35 can be increased to improve the overall luminance, and that the degree of freedom in the light distribution design is increased.

【0068】(実施形態14)ところで上記実施形態1
〜13においては、1枚の基板10に多数のLEDチッ
プ1が実装されており、例えば製造工程上で発生する不
良や経年劣化によって一部のLEDチップ1が点灯しな
くなった場合でも、当該不点灯のLEDチップ1が含ま
れる基板10全体を交換する必要があり、不便である。
(Embodiment 14) Incidentally, Embodiment 1
13 to 13, a large number of LED chips 1 are mounted on a single substrate 10. For example, even if some of the LED chips 1 do not turn on due to a defect occurring in the manufacturing process or deterioration over time, the LED chip 1 is not affected. It is necessary to replace the entire board 10 including the lit LED chip 1, which is inconvenient.

【0069】そこで、本実施形態では、数色の単色LE
Dチップ(例えば、赤・緑・青・黄)1a〜1dの組み
合わせを1つの単位とするモジュールを1セルSとし、
このセルSを複数個組み合わせることでLED照明装置
を構成するようにした点に特徴がある。図18に示すよ
うに実施形態1と同様の方法で形成されたシート状の基
板10の凹部11には、上記4色のLEDチップ1a〜
1dをマトリクス状に配置して実装してある(図19
(a)参照)。このように4色のLEDチップ1a〜1
dが実装された1つの凹部11を1セルSとし、図18
における破線部分で各セル毎にダイシングソーで切断す
る。そして、切断された1セルSを再度プリント基板等
に実装することで新たにモジュールが構成される(図1
9(b)参照)。上述のように本実施形態によれば、同
一の凹部11内に実装された4個のLEDチップ1を含
む1セルSを1つの単位とし、このセルSを複数個組み
合わせることでLED照明装置を構成するようにしたこ
とにより、製造工程で発生した不良あるいは経年劣化に
より一部のLEDチップ1が不点灯になった場合、当該
不点灯となったLEDチップ1が含まれるセルSのみを
良品と交換することでLED照明装置を安価に復旧させ
ることができる。また、混色あるいは配光特性の異なる
セルSを組み合わせるようにすれば、装飾用のLED照
明装置が簡単な構成で実現できるという利点もある。
Therefore, in this embodiment, several single-color LEs are used.
A module having a combination of D chips (for example, red / green / blue / yellow) 1a to 1d as one unit is defined as one cell S,
A feature is that an LED lighting device is configured by combining a plurality of the cells S. As shown in FIG. 18, the recesses 11 of the sheet-like substrate 10 formed by the same method as in the first embodiment have LED chips 1 a to
1d are arranged in a matrix and mounted (FIG. 19).
(A)). Thus, the four-color LED chips 1a to 1
One recess 11 in which “d” is mounted is defined as one cell S, and FIG.
Is cut by a dicing saw for each cell at the broken line portion in FIG. Then, by mounting the cut one cell S again on a printed circuit board or the like, a new module is configured.
9 (b)). As described above, according to the present embodiment, one cell S including four LED chips 1 mounted in the same recess 11 is defined as one unit, and an LED lighting device is manufactured by combining a plurality of the cells S. With this configuration, when some of the LED chips 1 become unlit due to a defect or aging deterioration occurring in the manufacturing process, only the cells S including the unlit LED chips 1 are regarded as good products. By replacing the LED lighting device, the LED lighting device can be restored at a low cost. Further, by combining cells S having different color mixing or light distribution characteristics, there is an advantage that an LED lighting device for decoration can be realized with a simple configuration.

【0070】(実施形態15)図20は本発明の実施形
態15を示す要部斜視図である。本実施形態は、MID
の基板37にLEDチップ1を微振動させる手段(マイ
クロマシン部38)を設けた点に特徴がある。マイクロ
マシン部38は一端が片持ち支持された3つの梁部38
aと、その梁部38aの上に設けられた水晶板38bと
によって構成され、各梁部38aの自由端近傍にそれぞ
れLEDチップ1が配設される。なお、LEDチップ1
の前方にはレンズ39を設けることが望ましい。
(Embodiment 15) FIG. 20 is a perspective view showing a main part of Embodiment 15 of the present invention. This embodiment uses the MID
This is characterized in that a means (micromachine section 38) for microvibrating the LED chip 1 is provided on the substrate 37 of FIG. The micromachine section 38 includes three beam sections 38 each having one end supported at one end.
a, and a crystal plate 38b provided on the beam portion 38a, and the LED chips 1 are arranged near free ends of the beam portions 38a, respectively. In addition, LED chip 1
Is desirably provided with a lens 39 in front of.

【0071】次に本実施形態の基板37の製造工程を、
実施形態1と異なる部分についてのみ説明する。基板3
7はセラミックから成るMID基板であり、例えばアル
ミナ粉に滑剤と樹脂を混練したものを射出成形し、所定
の形状をつくり、さらに脱脂乾燥、焼結させてセラミッ
ク成形品(成形基板)を作成する。その後、この成形基
板をアルカリ脱脂した後、セラミックの表面をプラズマ
処理して表面の活性化及び微細な粗面化を行う。次にセ
ラミックの表面にスパッタリング、真空蒸着等の適宜の
方法で銅、銀、金、ニッケル、白金、パラジウム等の金
属膜(めっき下地層)を形成する。この金属膜の厚みは
0.1〜2〔μm〕程度が好ましい。以下、実施形態1
と同様にしてパターニングを行って梁部38aの上に水
晶の薄板38bを実装し、さらにその上にLEDチップ
1の実装を行ってLED照明装置のモジュールが完成す
る。
Next, the manufacturing process of the substrate 37 of the present embodiment will be described.
Only parts different from the first embodiment will be described. Substrate 3
Reference numeral 7 denotes a ceramic MID substrate, for example, injection molding of a mixture of alumina powder and a lubricant and a resin to form a predetermined shape, further degrease drying, and sintering to form a ceramic molded product (molded substrate). . Then, after the molded substrate is alkali-degreased, the surface of the ceramic is plasma-treated to activate and finely roughen the surface. Next, a metal film (plating base layer) of copper, silver, gold, nickel, platinum, palladium or the like is formed on the surface of the ceramic by an appropriate method such as sputtering or vacuum evaporation. The thickness of this metal film is preferably about 0.1 to 2 [μm]. Hereinafter, the first embodiment
Patterning is performed in the same manner as described above, a thin quartz plate 38b is mounted on the beam portion 38a, and the LED chip 1 is mounted thereon, thereby completing the module of the LED lighting device.

【0072】そして、マイクロマシン部38に電圧を印
加することにより、水晶の逆圧電効果で梁部38aを揺
動させることができ、梁部38aの上に実装されている
LEDチップ1を微振動させることができる。而して、
特定のLEDチップ1に微振動を与えることにより、任
意の混色や配光特性を得ることができ、また、印加する
電圧の周波数やレベルに応じて任意の振動をLEDチッ
プ1に与えるように制御すれば、人に不快感を与えるち
らつき特性を改善することができる。
Then, by applying a voltage to the micromachine portion 38, the beam portion 38a can be swung by the inverse piezoelectric effect of quartz, and the LED chip 1 mounted on the beam portion 38a is slightly vibrated. be able to. Thus,
By giving a slight vibration to a specific LED chip 1, it is possible to obtain an arbitrary color mixture or light distribution characteristics, and to control the LED chip 1 to apply an arbitrary vibration according to the frequency or level of the applied voltage. This can improve the flicker characteristic that gives a person discomfort.

【0073】(実施形態16)図21は本発明の実施形
態16を示す斜視図、図22は側面断面図である。本実
施形態は、LEDチップ1が立体的に実装されるMID
の基板40とフレキシブル基板41とを一体に形成し、
撓み(曲げ)自在の基板42を構成した点に特徴があ
る。
(Embodiment 16) FIG. 21 is a perspective view showing Embodiment 16 of the present invention, and FIG. 22 is a side sectional view. In this embodiment, the MID on which the LED chip 1 is mounted three-dimensionally
The substrate 40 and the flexible substrate 41 are integrally formed,
It is characterized in that a flexible (bendable) substrate 42 is formed.

【0074】ここで、本実施形態の基板37の製造工程
を、実施形態1と異なる部分についてのみ説明する。予
め回路形成したポリイミド製のフレキシブル基板41を
金型の中に入れ射出成形によってフレキシブル基板41
を成形品に転写する。また、LEDチップ1が実装され
る部分に成形品の厚肉部(凸部)43を形成する。な
お、曲げを考慮して上記厚肉部43の間はフレキシブル
基板41のまま残す。また、樹脂の封止もLEDチップ
1周辺のみで行ない、フレキシブル基板41を曲げた際
に封止剤が直接曲がらないように考慮し、基板全体とし
て曲げ易いようにしてある。その成形基板をアルカリ脱
脂した後は実施形態1と同様の工程で基板42を形成す
る。
Here, the manufacturing process of the substrate 37 of the present embodiment will be described only for parts different from the first embodiment. A polyimide flexible substrate 41 having a circuit formed in advance is placed in a mold, and the flexible substrate 41 is formed by injection molding.
Is transferred to a molded article. Further, a thick portion (convex portion) 43 of the molded product is formed in a portion where the LED chip 1 is mounted. The flexible board 41 is left between the thick portions 43 in consideration of bending. Also, the resin is sealed only around the LED chip 1, and the flexible substrate 41 is bent so that the sealing agent does not directly bend when the flexible substrate 41 is bent. After the formed substrate is degreased with alkali, the substrate 42 is formed in the same process as in the first embodiment.

【0075】上述のように本実施形態によれば、LED
チップ1が立体的に実装されるMIDの基板40とフレ
キシブル基板41とを一体に形成し、撓み(曲げ)自在
の基板42を構成したことにより、基板41を自在に曲
げることができて配光特性を容易に変えることが可能と
なり、しかも基板41の弾性を利用してねじ等を使わず
に(照明器具の)ハウジング等に容易に取り付けること
ができる。
As described above, according to the present embodiment, the LED
Since the MID substrate 40 on which the chip 1 is mounted three-dimensionally and the flexible substrate 41 are integrally formed to form a flexible (bendable) substrate 42, the substrate 41 can be bent freely and light distribution is achieved. The characteristics can be easily changed, and furthermore, the elasticity of the substrate 41 can be used to easily attach to a housing or the like (of a lighting fixture) without using screws or the like.

【0076】(実施形態17)図23は本発明の実施形
態17を示す斜視図である。本実施形態は、実施形態1
のように複数の凹部11に各々複数個のLEDチップ1
が実装された基板10を、所定個数のLEDチップ1が
含まれる寸法単位で切断自在とした点に特徴がある。な
お、基板10等の基本的な構成は実施形態1と共通であ
るので、共通する部分には同一の符号を付して説明を省
略する。
(Embodiment 17) FIG. 23 is a perspective view showing Embodiment 17 of the present invention. This embodiment corresponds to the first embodiment.
As shown in FIG.
Is characterized in that the substrate 10 on which the LED chips 1 are mounted can be cut in units of dimensions including a predetermined number of LED chips 1. Since the basic configuration of the substrate 10 and the like is the same as that of the first embodiment, the common parts are denoted by the same reference numerals and the description thereof will be omitted.

【0077】図24に示すように本実施形態の回路は、
基板10に実装されるLEDチップ1を所定の個数ずつ
直列に接続するとともに、各直列回路を抵抗R1 …を介
して電源ラインL1 とスイッチング素子Q1 のコレクタ
との間に接続し、このスイッチング素子Q1 のエミッタ
を抵抗R2 を介してグランドラインL2 に接続し、さら
に電源ラインL1 とグランドラインL2 とに各々抵抗R
3 ,R4 を介してスイッチング素子Q1 のベースを接続
して構成してある。なお、電源ラインL1 −グランドラ
インL2 間には直流電圧DCが印加される。
As shown in FIG. 24, the circuit of this embodiment
With connecting LED chip 1 to be mounted on the substrate 10 in series by a predetermined number, connected between the collector of the power supply line L 1 and the switching element Q 1 and the respective series circuit through the resistor R 1 ..., the connected to the switching element ground line L 2 through a resistor R 2 to the emitter of Q 1, further each resistor R and the power supply line L 1 and a ground line L 2
3, through R 4 are constituted by connecting the base of the switching element Q 1. Note that a DC voltage DC is applied between the power supply line L 1 and the ground line L 2 .

【0078】そして、上記LEDチップ1の直列回路の
間の適当な切断箇所イで基板10が切断自在となってお
り、必要な個数のLEDチップ1でユニット化できるよ
うにしてある。ここで、ユニット化するLEDチップ1
の個数は、蛍光灯が出力(10、15、20、30W)
に応じた管球で形成されるように、出力に対応する個数
とすれば取扱が便利になる。また、切断し易いように基
板10に溝を設けることが望ましい。なお、基板10の
製造方法については実施形態1と共通であるから説明は
省略する。
The substrate 10 can be cut freely at an appropriate cutting position A between the series circuits of the LED chips 1 so that a required number of LED chips 1 can be unitized. Here, the LED chip 1 to be unitized
Of fluorescent lights output (10, 15, 20, 30 W)
If the number corresponds to the output so that the tube is formed by the tube according to the above, the handling becomes convenient. Further, it is desirable to provide a groove in the substrate 10 so as to be easily cut. Note that the method of manufacturing the substrate 10 is the same as that of the first embodiment, and a description thereof will be omitted.

【0079】上述のように本実施形態によれば、所定個
数のLEDチップ1が含まれる寸法単位で切断自在とし
たことにより、必要な照度が得られるような寸法に基板
10を切断して使用することができて効率的であり、し
かも基板10を大きな単位で作成することが可能でコス
トダウンが図れるという利点がある。
As described above, according to the present embodiment, the substrate 10 can be cut to a size such that a required illuminance can be obtained by making it possible to cut the size in a unit including a predetermined number of LED chips 1. This is advantageous in that the substrate 10 can be formed in a large unit and cost can be reduced.

【0080】[0080]

【発明の効果】請求項1の発明は、基板に凹部又は凸部
の少なくとも一方を複数形成するとともに、上記各凹部
又は凸部に各々1乃至複数の発光ダイオード素子を配設
したので、任意の配光が容易に得られるとともに薄型化
が可能となるという効果がある。
According to the first aspect of the present invention, at least one of a plurality of concave portions or convex portions is formed on the substrate, and one or a plurality of light emitting diode elements are disposed in each of the concave portions or convex portions. There is an effect that the light distribution can be easily obtained and the thickness can be reduced.

【0081】請求項2の発明は、上記複数の発光ダイオ
ード素子に発光色の異なる1乃至複数種の発光ダイオー
ド素子を含むので、白色や昼光色のような微妙な色差が
実現可能となるという効果がある。請求項3の発明は、
請求項1又は2の発明において、上記凹部又は凸部に上
記発光ダイオード素子からの光を反射する反射手段を設
けたので、高輝度並びに高効率化が図れるという効果が
ある。
According to the second aspect of the present invention, since the plurality of light emitting diode elements include one or more kinds of light emitting diode elements having different emission colors, a subtle color difference such as white or daylight can be realized. is there. The invention of claim 3 is
According to the first or second aspect of the present invention, since the concave portion or the convex portion is provided with a reflecting means for reflecting light from the light emitting diode element, there is an effect that high luminance and high efficiency can be achieved.

【0082】請求項4の発明は、上記基板の少なくとも
一部に複数の発光ダイオード素子のグランドとなる金属
板を設け、該金属板に上記発光ダイオード素子を接触さ
せて成るので、発光ダイオード素子が発する熱を金属板
により効率良く放熱することができ、温度上昇を抑えて
発光効率や輝度の低下が防止できるとともに発光ダイオ
ード素子の寿命が延ばせるという効果がある。
According to a fourth aspect of the present invention, at least a portion of the substrate is provided with a metal plate serving as a ground for a plurality of light emitting diode elements, and the light emitting diode elements are brought into contact with the metal plate. The generated heat can be efficiently dissipated by the metal plate, and there is an effect that a rise in temperature can be suppressed, a decrease in luminous efficiency and luminance can be prevented, and a life of the light emitting diode element can be extended.

【0083】請求項5の発明は、少なくとも上記基板の
凹部又は凸部の発光ダイオード素子の周りに当該発光ダ
イオード素子からの光を反射する金属製の放熱体を配設
したので、発光ダイオード素子が発する熱を金属製の放
熱体により効率良く放熱することができ、温度上昇を抑
えて発光効率や輝度の低下が防止できるとともに発光ダ
イオード素子の寿命が延ばせるという効果がある。
According to a fifth aspect of the present invention, since a metal radiator for reflecting light from the light emitting diode element is disposed at least around the light emitting diode element in the concave or convex portion of the substrate, the light emitting diode element can be used. The generated heat can be efficiently radiated by the metal radiator, so that the temperature rise can be suppressed, the luminous efficiency and the luminance can be prevented from lowering, and the life of the light emitting diode element can be extended.

【0084】請求項6の発明は、上記基板に銅張金属基
板を一体に形成し、該銅張金属基板の一方の面に形成さ
れた銅張部分に上記発光ダイオード素子を実装してグラ
ンドとし、上記発光ダイオード素子の発光を制御する制
御手段を構成する回路素子を上記銅張金属基板の他方の
面に実装したので、小型化が図れるとともに制御手段の
ノイズに対するシールドも可能になるという効果があ
る。
According to a sixth aspect of the present invention, a copper-clad metal substrate is integrally formed on the substrate, and the light-emitting diode element is mounted on a copper-clad portion formed on one surface of the copper-clad metal substrate to serve as a ground. Since the circuit element constituting the control means for controlling the light emission of the light emitting diode element is mounted on the other surface of the copper-clad metal substrate, it is possible to reduce the size and to shield the control means against noise. is there.

【0085】請求項7の発明は、上記発光ダイオード素
子から発する熱を放熱する放熱体を備え、該放熱体に複
数の凹凸部を設けたので、発光ダイオード素子が発する
熱を放熱体により効率良く放熱することができ、特に凹
凸部を設けることで放熱体の表面積を増加させて効率良
く放熱することができ、温度上昇を抑えて発光効率や輝
度の低下が防止できるとともに発光ダイオード素子の寿
命が延ばせるという効果がある。
According to a seventh aspect of the present invention, a heat radiator for radiating heat generated from the light emitting diode element is provided, and the heat radiator is provided with a plurality of uneven portions. It is possible to radiate heat, especially by providing the uneven part, it is possible to increase the surface area of the radiator and to radiate heat efficiently. This has the effect of extending it.

【0086】請求項8の発明は、上記発光ダイオード素
子の少なくとも一部分に接触する放熱フィンを備えたの
で、発光ダイオード素子が発する熱を放熱フィンにより
効率良く放熱することができ、温度上昇を抑えて発光効
率や輝度の低下が防止できるとともに発光ダイオード素
子の寿命が延ばせるという効果がある。請求項9の発明
は、上記発光ダイオード素子と少なくとも一部で接触す
る放熱ピンを上記基板内に埋設したので、発光ダイオー
ド素子が発する熱を放熱ピンにより効率良く放熱するこ
とができ、温度上昇を抑えて発光効率や輝度の低下が防
止できるとともに発光ダイオード素子の寿命が延ばせる
という効果がある。
According to the eighth aspect of the present invention, since the radiating fin is provided in contact with at least a part of the light emitting diode element, the heat generated by the light emitting diode element can be efficiently radiated by the radiating fin and the temperature rise can be suppressed. This has the effect of preventing a decrease in luminous efficiency and luminance and extending the life of the light emitting diode element. According to the ninth aspect of the present invention, the heat radiating pins that are at least partially in contact with the light emitting diode elements are embedded in the substrate, so that the heat generated by the light emitting diode elements can be efficiently radiated by the heat radiating pins, and the temperature rise can be reduced. It is possible to prevent the reduction of the luminous efficiency and the luminance by suppressing the luminous efficiency and extend the life of the light emitting diode element.

【0087】請求項10の発明は、上記基板の凸部を多
層に形成したので、発光ダイオード素子が発する熱を空
気の対流で発散させ、発光ダイオード素子の温度上昇を
抑えて発光効率や輝度の低下が防止できるとともに発光
ダイオード素子の寿命が延ばせるという効果がある。請
求項11の発明は、上記発光ダイオード素子近傍の上記
基板に通風用の貫通孔を設けたので、貫通孔を通る空気
の対流で発光ダイオード素子からの熱を発散させ、発光
ダイオード素子の温度上昇を抑えて発光効率や輝度の低
下が防止できるとともに発光ダイオード素子の寿命が延
ばせるという効果がある。
According to the tenth aspect of the present invention, since the convex portions of the substrate are formed in multiple layers, the heat generated by the light emitting diode element is radiated by convection of air, and the temperature rise of the light emitting diode element is suppressed to reduce the luminous efficiency and luminance. There is an effect that the reduction can be prevented and the life of the light emitting diode element can be extended. According to the eleventh aspect of the present invention, since a through hole for ventilation is provided in the substrate near the light emitting diode element, heat from the light emitting diode element is dissipated by convection of air passing through the through hole, and the temperature of the light emitting diode element rises. Thus, there is an effect that a reduction in luminous efficiency and luminance can be prevented, and a life of the light emitting diode element can be extended.

【0088】請求項12の発明は、上記発光ダイオード
素子を、当該発光ダイオード素子のP型半導体とN型半
導体とが上記基板の実装面に対して略平行に並ぶように
配設したので、発光ダイオード素子の実装にワイヤボン
ディングを使用せずに済み、発光効率を増大できるとと
もにワイヤの影が生じるのを防ぎ、配光特性の設計自由
度を拡げることができるという効果がある。
According to a twelfth aspect of the present invention, the light emitting diode element is disposed such that the P-type semiconductor and the N-type semiconductor of the light emitting diode element are arranged substantially in parallel to the mounting surface of the substrate. There is no need to use wire bonding for mounting the diode element, so that the luminous efficiency can be increased, the shadow of the wire can be prevented, and the degree of freedom in designing the light distribution characteristics can be increased.

【0089】請求項13の発明は、上記複数の発光ダイ
オード素子の発光方向に規則性を持たせるように上記基
板を形成したので、基板の形状に応じて容易に配光特性
を制御することができるという効果がある。請求項14
の発明は、上記基板の両面に凹部又は凸部の少なくとも
一方を形成するとともに、上記各凹部又は凸部に各々1
乃至複数の発光ダイオード素子を配設したので、光の照
射範囲を基板周囲の略全方向に拡げることができるとい
う効果がある。
According to the thirteenth aspect of the present invention, since the substrate is formed so that the light emitting directions of the plurality of light emitting diode elements have regularity, the light distribution characteristics can be easily controlled according to the shape of the substrate. There is an effect that can be. Claim 14
In the invention, at least one of a concave portion or a convex portion is formed on both surfaces of the substrate, and each of the concave portions or the convex portions is
In addition, since a plurality of light emitting diode elements are provided, there is an effect that the light irradiation range can be extended in almost all directions around the substrate.

【0090】請求項15の発明は、1乃至複数の上記凹
部又は凸部を有し該凹部又は凸部に発光色の異なる複数
種の発光ダイオード素子を配設してセルを構成し、該セ
ルを複数個用いて形成されるので、製造工程で発生した
不良あるいは経年劣化により一部の発光ダイオード素子
が不点灯になった場合、当該不点灯となった発光ダイオ
ード素子が含まれるセルのみを交換することで安価に復
旧させることができるという効果がある。また、混色あ
るいは配光特性の異なるセルを組み合わせるようにすれ
ば、装飾用のLED照明装置が簡単な構成で実現できる
という効果がある。
The invention according to a fifteenth aspect is directed to a cell having one or a plurality of the concave portions or the convex portions, wherein a plurality of types of light emitting diode elements having different emission colors are arranged in the concave portions or the convex portions. When a part of the light emitting diode element becomes unlit due to a defect or aging deterioration in the manufacturing process, only the cell containing the unlit LED element is replaced. By doing so, there is an effect that restoration can be performed at low cost. Further, by combining cells having different color mixing or light distribution characteristics, there is an effect that an LED lighting device for decoration can be realized with a simple configuration.

【0091】請求項16の発明は、上記発光ダイオード
素子を微振動させる手段を上記基板に設けたので、特定
の発光ダイオード素子を振動させることで任意の混色及
び配光特性を得ることができ、また振動を制御すること
で人に不快感を与える光のちらつき特性を改善すること
ができるという効果がある。請求項17の発明は、上記
基板を撓み自在に形成したので、基板を自在に曲げるこ
とができて配光特性を容易に変えることが可能となり、
しかも基板の弾性を利用してねじ等を使わずにハウジン
グ等に容易に取り付けることができるという効果があ
る。
According to the sixteenth aspect of the present invention, the means for finely vibrating the light emitting diode element is provided on the substrate, so that an arbitrary color mixing and light distribution characteristics can be obtained by vibrating a specific light emitting diode element. In addition, there is an effect that by controlling the vibration, the flickering property of light that gives a discomfort to a person can be improved. According to the invention of claim 17, since the substrate is formed to be flexible, the substrate can be bent freely and the light distribution characteristics can be easily changed,
In addition, there is an effect that the elasticity of the substrate can be easily attached to a housing or the like without using screws or the like.

【0092】請求項18の発明は、所定個数の上記発光
ダイオード素子が含まれる寸法単位に上記基板を切断自
在としたので、必要な照度が得られるような寸法に基板
を切断して使用することができて効率的であり、しかも
基板を大きな単位で作成することが可能でコストダウン
が図れるという効果がある。
According to the eighteenth aspect of the present invention, since the substrate can be cut into dimensional units containing a predetermined number of the light emitting diode elements, the substrate can be cut to a size that can provide a required illuminance. Therefore, there is an effect that the substrate can be formed in a large unit, and the cost can be reduced.

【図面の簡単な説明】[Brief description of the drawings]

【図1】実施形態1の要部を示す側面断面図である。FIG. 1 is a side sectional view showing a main part of a first embodiment.

【図2】同上を示す斜視図である。FIG. 2 is a perspective view showing the same.

【図3】実施形態2の要部を示す側面断面図である。FIG. 3 is a side sectional view showing a main part of a second embodiment.

【図4】実施形態3の要部を示す側面断面図である。FIG. 4 is a side sectional view showing a main part of a third embodiment.

【図5】同上を示す平面図である。FIG. 5 is a plan view showing the same.

【図6】実施形態4の要部を示す側面断面図である。FIG. 6 is a side sectional view showing a main part of a fourth embodiment.

【図7】実施形態5の要部を示す側面断面図である。FIG. 7 is a side sectional view showing a main part of a fifth embodiment.

【図8】実施形態6の要部を示す側面断面図である。FIG. 8 is a side sectional view showing a main part of a sixth embodiment.

【図9】実施形態7の要部を示す側面断面図である。FIG. 9 is a side sectional view showing a main part of a seventh embodiment.

【図10】実施形態8の要部を示す側面断面図である。FIG. 10 is a side sectional view showing a main part of an eighth embodiment.

【図11】実施形態9の要部を示す側面図である。FIG. 11 is a side view showing a main part of a ninth embodiment.

【図12】実施形態10の要部を示す側面断面図であ
る。
FIG. 12 is a side sectional view showing a main part of a tenth embodiment.

【図13】実施形態11を示し、(a)は要部側面断面
図、(b)は要部斜視図である。
13A and 13B show an eleventh embodiment, wherein FIG. 13A is a side sectional view of a main part, and FIG. 13B is a perspective view of a main part.

【図14】同上の他の構成を示し、(a)は要部側面断
面図、(b)は要部斜視図である。
14A and 14B show another configuration of the above, wherein FIG. 14A is a side sectional view of a main part, and FIG. 14B is a perspective view of a main part.

【図15】同上に対する従来の構成を示す要部側面断面
図である。
FIG. 15 is a side sectional view of a main part showing a conventional configuration for the above.

【図16】実施形態12の要部を示す側面図である。FIG. 16 is a side view showing a main part of the twelfth embodiment.

【図17】実施形態13の要部を示す側面図である。FIG. 17 is a side view showing a main part of a thirteenth embodiment.

【図18】実施形態14の斜視図である。FIG. 18 is a perspective view of a fourteenth embodiment.

【図19】同上を示し、(a)は1セルの構成図、
(b)は複数セルから成るモジュールの構成図である。
FIG. 19 shows the same as the above, (a) is a configuration diagram of one cell,
(B) is a configuration diagram of a module including a plurality of cells.

【図20】実施形態15の要部斜視図である。FIG. 20 is a perspective view of a main part of the fifteenth embodiment.

【図21】実施形態16の斜視図である。FIG. 21 is a perspective view of a sixteenth embodiment.

【図22】同上の要部を示す側面図である。FIG. 22 is a side view showing a main part of the above.

【図23】実施形態17の斜視図である。FIG. 23 is a perspective view of a seventeenth embodiment.

【図24】同上の要部回路構成図である。FIG. 24 is a circuit diagram of a main part of the above.

【図25】従来例を示す側面図である。FIG. 25 is a side view showing a conventional example.

【図26】同上の斜視図である。FIG. 26 is a perspective view of the same.

【符号の説明】[Explanation of symbols]

1 LEDチップ 10 基板 11 凹部 DESCRIPTION OF SYMBOLS 1 LED chip 10 Substrate 11 Concave part

───────────────────────────────────────────────────── フロントページの続き (72)発明者 鈴木 俊之 大阪府門真市大字門真1048番地松下電工株 式会社内 (72)発明者 塩浜 英二 大阪府門真市大字門真1048番地松下電工株 式会社内 (72)発明者 杉本 勝 大阪府門真市大字門真1048番地松下電工株 式会社内 (72)発明者 山本 正平 大阪府門真市大字門真1048番地松下電工株 式会社内 (72)発明者 橋爪 二郎 大阪府門真市大字門真1048番地松下電工株 式会社内 (72)発明者 秋庭 泰史 大阪府門真市大字門真1048番地松下電工株 式会社内 (72)発明者 田中 孝司 大阪府門真市大字門真1048番地松下電工株 式会社内 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Toshiyuki Suzuki 1048 Kadoma Kadoma, Osaka Prefecture Matsushita Electric Works, Ltd. (72) Inventor Eiji Shiohama 1048 Kadoma Kadoma, Kadoma City, Osaka Matsushita Electric Works Co., Ltd. ( 72) Inventor Masaru Sugimoto 1048, Kazuma Kadoma, Kadoma City, Osaka Prefecture, Japan (72) Inventor Shohei Yamamoto 1048, Kazuma Kadoma, Kadoma City, Osaka Prefecture Inside Matsushita Electric Works, Ltd. 1048, Kadoma, Kadoma, Matsushita Electric Works, Ltd. (72) Inventor Yasufumi Akiba, Kazuma, Kazuma, Osaka 1048, Matsushita Electric Works, Ltd. Within a stock company

Claims (18)

【特許請求の範囲】[Claims] 【請求項1】 基板に凹部又は凸部の少なくとも一方を
複数形成するとともに、上記各凹部又は凸部に各々1乃
至複数の発光ダイオード素子を配設したことを特徴とす
るLED照明装置。
1. An LED lighting device, wherein at least one of a concave portion and a convex portion is formed on a substrate, and one or a plurality of light emitting diode elements are disposed in each of the concave portions or the convex portions.
【請求項2】 上記複数の発光ダイオード素子に発光色
の異なる1乃至複数種の発光ダイオード素子を含むこと
を特徴とする請求項1記載のLED照明装置。
2. The LED lighting device according to claim 1, wherein the plurality of light emitting diode elements include one or more kinds of light emitting diode elements having different emission colors.
【請求項3】 上記凹部又は凸部に上記発光ダイオード
素子からの光を反射する反射手段を設けたことを特徴と
する請求項1又は2記載のLED照明装置。
3. The LED lighting device according to claim 1, wherein a reflection means for reflecting light from the light emitting diode element is provided in the concave portion or the convex portion.
【請求項4】 上記基板の少なくとも一部に複数の発光
ダイオード素子のグランドとなる金属板を設け、該金属
板に上記発光ダイオード素子を接触させて成ることを特
徴とする請求項1記載のLED照明装置。
4. The LED according to claim 1, wherein a metal plate serving as a ground of the plurality of light emitting diode elements is provided on at least a part of the substrate, and the light emitting diode elements are brought into contact with the metal plate. Lighting equipment.
【請求項5】 少なくとも上記基板の凹部又は凸部の発
光ダイオード素子の周りに当該発光ダイオード素子から
の光を反射する金属製の放熱体を配設したことを特徴と
する請求項1記載のLED照明装置。
5. The LED according to claim 1, wherein a metal radiator that reflects light from the light emitting diode element is disposed at least around the light emitting diode element in the concave or convex part of the substrate. Lighting equipment.
【請求項6】 上記基板に銅張金属基板を一体に形成
し、該銅張金属基板の一方の面に形成された銅張部分に
上記発光ダイオード素子を実装してグランドとし、上記
発光ダイオード素子の発光を制御する制御手段を構成す
る回路素子を上記銅張金属基板の他方の面に実装したこ
とを特徴とする請求項1記載のLED照明装置。
6. A light-emitting diode device, wherein a copper-clad metal substrate is integrally formed on the substrate, and the light-emitting diode device is mounted on a copper-clad portion formed on one surface of the copper-clad metal substrate to serve as a ground. 2. The LED lighting device according to claim 1, wherein a circuit element constituting a control unit for controlling light emission of said LED is mounted on the other surface of said copper-clad metal substrate.
【請求項7】 上記発光ダイオード素子から発する熱を
放熱する放熱体を備え、該放熱体に複数の凹凸部を設け
たことを特徴とする請求項1記載のLED照明装置。
7. The LED lighting device according to claim 1, further comprising a radiator for radiating heat generated from the light emitting diode element, wherein the radiator is provided with a plurality of uneven portions.
【請求項8】 上記発光ダイオード素子の少なくとも一
部分に接触する放熱フィンを備えたこと特徴とする請求
項1記載のLED照明装置。
8. The LED lighting device according to claim 1, further comprising a radiation fin that contacts at least a part of the light emitting diode element.
【請求項9】 上記発光ダイオード素子と少なくとも一
部で接触する放熱ピンを上記基板内に埋設したことを特
徴とする請求項1記載のLED照明装置。
9. The LED lighting device according to claim 1, wherein a heat radiating pin at least partially in contact with said light emitting diode element is embedded in said substrate.
【請求項10】 上記基板の凸部を多層に形成したこと
を特徴とする請求項1記載のLED照明装置。
10. The LED lighting device according to claim 1, wherein the convex portions of the substrate are formed in multiple layers.
【請求項11】 上記発光ダイオード素子近傍の上記基
板に通風用の貫通孔を設けたことを特徴とする請求項1
記載のLED照明装置。
11. A ventilation hole is provided in said substrate near said light emitting diode element for ventilation.
The LED lighting device as described in the above.
【請求項12】 上記発光ダイオード素子を、当該発光
ダイオード素子のP型半導体とN型半導体とが上記基板
の実装面に対して略平行に並ぶように配設したことを特
徴とする請求項1記載のLED照明装置。
12. The light-emitting diode device according to claim 1, wherein the P-type semiconductor and the N-type semiconductor of the light-emitting diode device are arranged substantially in parallel to a mounting surface of the substrate. The LED lighting device as described in the above.
【請求項13】 上記複数の発光ダイオード素子の発光
方向に規則性を持たせるように上記基板を形成したこと
を特徴とする請求項1記載のLED照明装置。
13. The LED lighting device according to claim 1, wherein the substrate is formed so that the light emitting directions of the plurality of light emitting diode elements have regularity.
【請求項14】 上記基板の両面に凹部又は凸部の少な
くとも一方を形成するとともに、上記各凹部又は凸部に
各々1乃至複数の発光ダイオード素子を配設したことを
特徴とする請求項1記載のLED照明装置。
14. The semiconductor device according to claim 1, wherein at least one of a concave portion and a convex portion is formed on both surfaces of the substrate, and one or a plurality of light emitting diode elements are disposed in each of the concave portions or the convex portions. LED lighting device.
【請求項15】 1乃至複数の上記凹部又は凸部を有し
該凹部又は凸部に発光色の異なる複数種の発光ダイオー
ド素子を配設してセルを構成し、該セルを複数個用いて
形成されることを特徴とする請求項1記載のLED照明
装置。
15. A cell comprising one or more concave portions or convex portions and a plurality of types of light emitting diode elements having different emission colors arranged in the concave portions or convex portions, and a plurality of the cells are used. The LED lighting device according to claim 1, wherein the LED lighting device is formed.
【請求項16】 上記発光ダイオード素子を微振動させ
る手段を上記基板に設けたことを特徴とする請求項1記
載のLED照明装置。
16. The LED lighting device according to claim 1, wherein means for microvibrating the light emitting diode element is provided on the substrate.
【請求項17】 上記基板を撓み自在に形成したことを
特徴とする請求項1記載のLED照明装置。
17. The LED lighting device according to claim 1, wherein said substrate is formed to be flexible.
【請求項18】 所定個数の上記発光ダイオード素子が
含まれる寸法単位に上記基板を切断自在としたことを特
徴とする請求項1記載のLED照明装置。
18. The LED lighting device according to claim 1, wherein said substrate is cuttable in a dimensional unit including a predetermined number of said light emitting diode elements.
JP32262697A 1997-11-25 1997-11-25 Led illuminator Pending JPH11163412A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP32262697A JPH11163412A (en) 1997-11-25 1997-11-25 Led illuminator
TW087119454A TW408497B (en) 1997-11-25 1998-11-24 LED illuminating apparatus
EP98203973A EP0921568B1 (en) 1997-11-25 1998-11-25 LED Luminaire
US09/199,893 US6331063B1 (en) 1997-11-25 1998-11-25 LED luminaire with light control means
DE69841798T DE69841798D1 (en) 1997-11-25 1998-11-25 Luminaire with light emitting diodes
US09/895,354 US20020006040A1 (en) 1997-11-25 2001-06-29 Led luminaire with light control means

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32262697A JPH11163412A (en) 1997-11-25 1997-11-25 Led illuminator

Publications (1)

Publication Number Publication Date
JPH11163412A true JPH11163412A (en) 1999-06-18

Family

ID=18145824

Family Applications (1)

Application Number Title Priority Date Filing Date
JP32262697A Pending JPH11163412A (en) 1997-11-25 1997-11-25 Led illuminator

Country Status (1)

Country Link
JP (1) JPH11163412A (en)

Cited By (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6611000B2 (en) 2001-03-14 2003-08-26 Matsushita Electric Industrial Co., Ltd. Lighting device
JP2004519866A (en) * 2001-04-03 2004-07-02 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Matrix array device with flexible substrate
JP2004228170A (en) * 2003-01-20 2004-08-12 Matsushita Electric Works Ltd Wiring board and light emitting device
JP2004235652A (en) * 2003-01-31 2004-08-19 Osram Opto Semiconductors Gmbh Light emitting diode carrier
US6809475B2 (en) 2000-06-15 2004-10-26 Lednium Pty Limited Led lamp with light-emitting junctions arranged in a three-dimensional array
US6857767B2 (en) 2001-09-18 2005-02-22 Matsushita Electric Industrial Co., Ltd. Lighting apparatus with enhanced capability of heat dissipation
WO2005038935A1 (en) * 2003-10-15 2005-04-28 Nichia Corporation Light-emitting device
US6940102B2 (en) 2001-02-13 2005-09-06 Agilent Technologies, Inc. Light-emitting diode and a method for its manufacture
EP1508174A4 (en) * 2002-05-29 2005-10-12 Optolum Inc Light emitting diode light source
JP2005347375A (en) * 2004-06-01 2005-12-15 Shinko Electric Ind Co Ltd Stem for light-emitting element, and optical semiconductor device
WO2006001352A1 (en) * 2004-06-25 2006-01-05 Sanyo Electric Co., Ltd. Light-emitting device
WO2006003569A1 (en) * 2004-06-29 2006-01-12 Koninklijke Philips Electronics N.V. Led lighting
JP2006049657A (en) * 2004-08-06 2006-02-16 Citizen Electronics Co Ltd Led lamp
JP2006509372A (en) * 2002-12-06 2006-03-16 クリー インコーポレイテッド Composite leadframe LED package and method of manufacturing the same This application is US Provisional Patent Application No. 60 / 431,523, filed December 6, 2002, entitled "Leadframe based LEDor semiconductor packaging package". Claims the benefit of filing date to the US Patent and Trademark Office.
JP2006114854A (en) * 2004-10-18 2006-04-27 Sharp Corp Semiconductor light emitting device, and backlight device for liquid crystal display
JP2006228529A (en) * 2005-02-16 2006-08-31 Matsushita Electric Works Ltd Illumination apparatus
JP2006273634A (en) * 2005-03-28 2006-10-12 Matsushita Electric Works Ltd Alumina substrate and its circuit forming method
KR100643583B1 (en) * 2005-11-10 2006-11-10 루미마이크로 주식회사 Module of multi-color led package using metal pcb, and manufacturing method thereof
JP2007059905A (en) * 2005-08-22 2007-03-08 Avago Technologies Ecbu Ip (Singapore) Pte Ltd Optoelectronic package, and method and system of manufacturing and using the same
JP2007090343A (en) * 2005-09-20 2007-04-12 Summit Business Products Inc Ultraviolet light-emitting diode device
JP2007129273A (en) * 2007-02-23 2007-05-24 Matsushita Electric Works Ltd Method for manufacturing led display apparatus
JP2007172872A (en) * 2005-12-19 2007-07-05 Hitachi Displays Ltd Lighting system, and image display device using the same
DE10230105B4 (en) * 2001-07-05 2007-07-26 Tridonic Optoelectronics Gmbh White LED light source
JP2007235085A (en) * 2006-02-03 2007-09-13 Hitachi Chem Co Ltd Method of manufacturing package substrate for packaging optical semiconductor element and method of manufacturing optical semiconductor device using the same
JP2007273603A (en) * 2006-03-30 2007-10-18 Kyocera Corp Wiring board for light emitting element, and light emitting device
JP2007531303A (en) * 2004-03-29 2007-11-01 クリー インコーポレイテッド Semiconductor light emitting device comprising a flexible coating having optical elements therein and method of assembling the same
US7320632B2 (en) 2000-06-15 2008-01-22 Lednium Pty Limited Method of producing a lamp
JP2008507150A (en) * 2004-07-19 2008-03-06 ラミナ ライティング インコーポレーテッド LED array package with internal feedback and control
JP2008091161A (en) * 2006-09-29 2008-04-17 Matsushita Electric Works Ltd Led lighting system
JP2008089412A (en) * 2006-10-02 2008-04-17 Matsushita Electric Works Ltd Pressure sensor
JP2008235824A (en) * 2007-03-23 2008-10-02 Sharp Corp Light-mitting device and method of manufacturing the same
WO2009038072A1 (en) * 2007-09-21 2009-03-26 Showa Denko K.K. Light-emitting device, display, and light-emitting device manufacturing method
JP2009135080A (en) * 2007-11-28 2009-06-18 Ind Technol Res Inst Light source device
US7621654B2 (en) 2004-03-26 2009-11-24 Panasonic Corporation LED mounting module, LED module, manufacturing method of LED mounting module, and manufacturing method of LED module
JP2010056192A (en) * 2008-08-27 2010-03-11 Kyocera Corp Surface-emitting irradiation device, surface-emitting irradiation equipment, and droplet discharge equipment
JP2010068001A (en) * 2001-03-06 2010-03-25 Digital Optics Corp Integrated electro-optic module
US7704762B2 (en) 2002-06-14 2010-04-27 Lednium Technology Pty Limited Lamp and method of producing a lamp
US7737462B2 (en) 2003-02-28 2010-06-15 Citizen Electronics Co., Ltd Light emitting diode and light emitting diode device including the light emitting diode element and method for manufacturing the light emitting diode
KR100969907B1 (en) 2006-02-23 2010-07-13 파나소닉 전공 주식회사 Led luminaire
JP2011082259A (en) * 2009-10-05 2011-04-21 Dainippon Printing Co Ltd Led element mounting member and method for manufacturing the same, and led element package and method for manufacturing the same
US7992445B2 (en) 2006-10-02 2011-08-09 Panasonic Electric Works Co., Ltd. Pressure sensor
JP4879913B2 (en) * 2005-03-01 2012-02-22 マシモ・ラボラトリーズ・インコーポレーテッド Multi-wavelength sensor board
CN102760730A (en) * 2012-07-20 2012-10-31 歌尔声学股份有限公司 Light-emitting diode device
JP2014502030A (en) * 2011-01-05 2014-01-23 深▲せん▼市衆明半導体照明有限公司 LED module and lighting device
JP2014130967A (en) * 2012-12-28 2014-07-10 Nichia Chem Ind Ltd Light emitting device
KR101453748B1 (en) * 2011-12-30 2014-10-23 루미마이크로 주식회사 Light emitting diode package
US8965471B2 (en) 2007-04-21 2015-02-24 Cercacor Laboratories, Inc. Tissue profile wellness monitor
JP2016207757A (en) * 2015-04-17 2016-12-08 シチズン電子株式会社 Led light-emitting device and manufacturing method therefor
JP2017050344A (en) * 2015-08-31 2017-03-09 シチズン電子株式会社 Light-emitting device
JP2017085012A (en) * 2015-10-29 2017-05-18 パナソニックIpマネジメント株式会社 Mold circuit component and electronic circuit device including the same
JP2017118098A (en) * 2015-12-21 2017-06-29 日亜化学工業株式会社 Method of manufacturing light-emitting device
US9839381B1 (en) 2009-11-24 2017-12-12 Cercacor Laboratories, Inc. Physiological measurement system with automatic wavelength adjustment
JP2018061027A (en) * 2016-09-29 2018-04-12 日亜化学工業株式会社 Method for manufacturing light-emitting device
US10199533B2 (en) 2015-12-21 2019-02-05 Nichia Corporation Method of manufacturing light emitting device
US10270016B2 (en) 2016-09-29 2019-04-23 Nichia Corporation Light emitting device
US10729402B2 (en) 2009-12-04 2020-08-04 Masimo Corporation Calibration for multi-stage physiological monitors
CN113471239A (en) * 2021-06-30 2021-10-01 上海天马微电子有限公司 Display panel and display device

Citations (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54150478U (en) * 1978-04-10 1979-10-19
JPS6045452U (en) * 1983-09-05 1985-03-30 スタンレー電気株式会社 Substrate for light emitting devices with reflective function
JPS6185007U (en) * 1984-11-12 1986-06-04
JPS61137376A (en) * 1984-12-07 1986-06-25 エヌ・ベー・フイリツプス・フルーイランペンフアブリケン Light emitting element matrix and manufacture thereof
JPS62235787A (en) * 1986-04-07 1987-10-15 Koito Mfg Co Ltd Illuminating device
JPS6322759U (en) * 1986-07-26 1988-02-15
JPS63120287U (en) * 1986-12-29 1988-08-03
JPH01138748U (en) * 1988-03-16 1989-09-21
JPH01309201A (en) * 1988-06-06 1989-12-13 Mitsubishi Cable Ind Ltd Luminous diode lighting apparatus
JPH02201396A (en) * 1988-11-29 1990-08-09 Valeo Vision Light emitting strip
JPH0567033U (en) * 1991-12-17 1993-09-03 日本ビクター株式会社 Semiconductor device
JPH0645659A (en) * 1992-07-23 1994-02-18 Stanley Electric Co Ltd Multiple-color light emitting chip led
JPH07202271A (en) * 1993-12-28 1995-08-04 Matsushita Electric Works Ltd Light-emitting diode and manufacture thereof
JPH07307491A (en) * 1994-05-11 1995-11-21 Mitsubishi Cable Ind Ltd Led aggregate module and its manufacture
JPH07307492A (en) * 1994-05-11 1995-11-21 Mitsubishi Cable Ind Ltd Led aggregate module and its manufacture
JPH088463A (en) * 1994-06-21 1996-01-12 Sharp Corp Thin type led dot matrix unit
JPH08116097A (en) * 1994-10-14 1996-05-07 Mitsubishi Cable Ind Ltd Led display
JPH08213660A (en) * 1994-12-06 1996-08-20 Sharp Corp Light emitting device and its manufacture
JPH08223365A (en) * 1994-12-15 1996-08-30 Nikon Corp Image input device and light emitting device
JPH10502772A (en) * 1994-12-08 1998-03-10 クァンタム・ディバイセズ・インコーポレーテッド Optoelectronic device array and method of manufacturing the same
JPH1098215A (en) * 1996-09-24 1998-04-14 Toyoda Gosei Co Ltd Light-emitting diode device
JPH10229221A (en) * 1997-02-17 1998-08-25 Kouha:Kk Light emitting diode display and image picture display using the same

Patent Citations (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54150478U (en) * 1978-04-10 1979-10-19
JPS6045452U (en) * 1983-09-05 1985-03-30 スタンレー電気株式会社 Substrate for light emitting devices with reflective function
JPS6185007U (en) * 1984-11-12 1986-06-04
JPS61137376A (en) * 1984-12-07 1986-06-25 エヌ・ベー・フイリツプス・フルーイランペンフアブリケン Light emitting element matrix and manufacture thereof
JPS62235787A (en) * 1986-04-07 1987-10-15 Koito Mfg Co Ltd Illuminating device
JPS6322759U (en) * 1986-07-26 1988-02-15
JPS63120287U (en) * 1986-12-29 1988-08-03
JPH01138748U (en) * 1988-03-16 1989-09-21
JPH01309201A (en) * 1988-06-06 1989-12-13 Mitsubishi Cable Ind Ltd Luminous diode lighting apparatus
JPH02201396A (en) * 1988-11-29 1990-08-09 Valeo Vision Light emitting strip
JPH0567033U (en) * 1991-12-17 1993-09-03 日本ビクター株式会社 Semiconductor device
JPH0645659A (en) * 1992-07-23 1994-02-18 Stanley Electric Co Ltd Multiple-color light emitting chip led
JPH07202271A (en) * 1993-12-28 1995-08-04 Matsushita Electric Works Ltd Light-emitting diode and manufacture thereof
JPH07307491A (en) * 1994-05-11 1995-11-21 Mitsubishi Cable Ind Ltd Led aggregate module and its manufacture
JPH07307492A (en) * 1994-05-11 1995-11-21 Mitsubishi Cable Ind Ltd Led aggregate module and its manufacture
JPH088463A (en) * 1994-06-21 1996-01-12 Sharp Corp Thin type led dot matrix unit
JPH08116097A (en) * 1994-10-14 1996-05-07 Mitsubishi Cable Ind Ltd Led display
JPH08213660A (en) * 1994-12-06 1996-08-20 Sharp Corp Light emitting device and its manufacture
JPH10502772A (en) * 1994-12-08 1998-03-10 クァンタム・ディバイセズ・インコーポレーテッド Optoelectronic device array and method of manufacturing the same
JPH08223365A (en) * 1994-12-15 1996-08-30 Nikon Corp Image input device and light emitting device
JPH1098215A (en) * 1996-09-24 1998-04-14 Toyoda Gosei Co Ltd Light-emitting diode device
JPH10229221A (en) * 1997-02-17 1998-08-25 Kouha:Kk Light emitting diode display and image picture display using the same

Cited By (101)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7320632B2 (en) 2000-06-15 2008-01-22 Lednium Pty Limited Method of producing a lamp
US7352127B2 (en) 2000-06-15 2008-04-01 Lednium Pty Limited LED lamp with light-emitting junction arranged in three-dimensional array
US6809475B2 (en) 2000-06-15 2004-10-26 Lednium Pty Limited Led lamp with light-emitting junctions arranged in a three-dimensional array
US6940102B2 (en) 2001-02-13 2005-09-06 Agilent Technologies, Inc. Light-emitting diode and a method for its manufacture
JP2010068001A (en) * 2001-03-06 2010-03-25 Digital Optics Corp Integrated electro-optic module
US6611000B2 (en) 2001-03-14 2003-08-26 Matsushita Electric Industrial Co., Ltd. Lighting device
JP2004519866A (en) * 2001-04-03 2004-07-02 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Matrix array device with flexible substrate
DE10230105B4 (en) * 2001-07-05 2007-07-26 Tridonic Optoelectronics Gmbh White LED light source
US6857767B2 (en) 2001-09-18 2005-02-22 Matsushita Electric Industrial Co., Ltd. Lighting apparatus with enhanced capability of heat dissipation
EP1508174A4 (en) * 2002-05-29 2005-10-12 Optolum Inc Light emitting diode light source
US7704762B2 (en) 2002-06-14 2010-04-27 Lednium Technology Pty Limited Lamp and method of producing a lamp
US7692206B2 (en) 2002-12-06 2010-04-06 Cree, Inc. Composite leadframe LED package and method of making the same
JP4757495B2 (en) * 2002-12-06 2011-08-24 クリー インコーポレイテッド Composite lead frame LED package and manufacturing method thereof
JP2006509372A (en) * 2002-12-06 2006-03-16 クリー インコーポレイテッド Composite leadframe LED package and method of manufacturing the same This application is US Provisional Patent Application No. 60 / 431,523, filed December 6, 2002, entitled "Leadframe based LEDor semiconductor packaging package". Claims the benefit of filing date to the US Patent and Trademark Office.
JP2004228170A (en) * 2003-01-20 2004-08-12 Matsushita Electric Works Ltd Wiring board and light emitting device
JP2004235652A (en) * 2003-01-31 2004-08-19 Osram Opto Semiconductors Gmbh Light emitting diode carrier
US7737462B2 (en) 2003-02-28 2010-06-15 Citizen Electronics Co., Ltd Light emitting diode and light emitting diode device including the light emitting diode element and method for manufacturing the light emitting diode
US7745835B2 (en) 2003-02-28 2010-06-29 Citizen Electronics Co., Ltd. Light emitting diode and light emitting diode device including the light emitting diode element and method for manufacturing the light emitting diode
US7482636B2 (en) 2003-10-15 2009-01-27 Nichia Corporation Light emitting device
WO2005038935A1 (en) * 2003-10-15 2005-04-28 Nichia Corporation Light-emitting device
US7812365B2 (en) 2003-10-15 2010-10-12 Nichia Corporation Heat dissipation member, semiconductor apparatus and semiconductor light emitting apparatus
US7621654B2 (en) 2004-03-26 2009-11-24 Panasonic Corporation LED mounting module, LED module, manufacturing method of LED mounting module, and manufacturing method of LED module
JP2007531303A (en) * 2004-03-29 2007-11-01 クリー インコーポレイテッド Semiconductor light emitting device comprising a flexible coating having optical elements therein and method of assembling the same
EP1730791B1 (en) * 2004-03-29 2019-08-28 Cree, Inc. Semiconductor light emitting device including flexible film having therein an optical element, and method of assembling the same
EP2259351A3 (en) * 2004-03-29 2017-01-04 Cree, Inc. Semiconductor light emitting devices including flexible film having therein an optical element, and methods of assembling same
JP2005347375A (en) * 2004-06-01 2005-12-15 Shinko Electric Ind Co Ltd Stem for light-emitting element, and optical semiconductor device
WO2006001352A1 (en) * 2004-06-25 2006-01-05 Sanyo Electric Co., Ltd. Light-emitting device
JP4694567B2 (en) * 2004-06-29 2011-06-08 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ LED lighting
KR101111274B1 (en) 2004-06-29 2012-02-17 코닌클리즈케 필립스 일렉트로닉스 엔.브이. Led lighting
JP2008505436A (en) * 2004-06-29 2008-02-21 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ LED lighting
WO2006003569A1 (en) * 2004-06-29 2006-01-12 Koninklijke Philips Electronics N.V. Led lighting
CN103104837A (en) * 2004-06-29 2013-05-15 皇家飞利浦电子股份有限公司 Lighting system, lighting module, method of improving lighting from adjacent LED modules and use method of lighting aperture
JP2008507150A (en) * 2004-07-19 2008-03-06 ラミナ ライティング インコーポレーテッド LED array package with internal feedback and control
JP2006049657A (en) * 2004-08-06 2006-02-16 Citizen Electronics Co Ltd Led lamp
US7977689B2 (en) 2004-10-18 2011-07-12 Sharp Kabushiki Kaisha Backlight device for liquid crystal display including a plurality of light emitting diodes within their own concaves aligned in a straight line within a larger concave
JP2006114854A (en) * 2004-10-18 2006-04-27 Sharp Corp Semiconductor light emitting device, and backlight device for liquid crystal display
JP2006228529A (en) * 2005-02-16 2006-08-31 Matsushita Electric Works Ltd Illumination apparatus
US9549696B2 (en) 2005-03-01 2017-01-24 Cercacor Laboratories, Inc. Physiological parameter confidence measure
US9131882B2 (en) 2005-03-01 2015-09-15 Cercacor Laboratories, Inc. Noninvasive multi-parameter patient monitor
US10856788B2 (en) 2005-03-01 2020-12-08 Cercacor Laboratories, Inc. Noninvasive multi-parameter patient monitor
US10251585B2 (en) 2005-03-01 2019-04-09 Cercacor Laboratories, Inc. Noninvasive multi-parameter patient monitor
US8929964B2 (en) 2005-03-01 2015-01-06 Cercacor Laboratories, Inc. Multiple wavelength sensor drivers
US10123726B2 (en) 2005-03-01 2018-11-13 Cercacor Laboratories, Inc. Configurable physiological measurement system
US9241662B2 (en) 2005-03-01 2016-01-26 Cercacor Laboratories, Inc. Configurable physiological measurement system
US8849365B2 (en) 2005-03-01 2014-09-30 Cercacor Laboratories, Inc. Multiple wavelength sensor emitters
US9351675B2 (en) 2005-03-01 2016-05-31 Cercacor Laboratories, Inc. Noninvasive multi-parameter patient monitor
US11430572B2 (en) 2005-03-01 2022-08-30 Cercacor Laboratories, Inc. Multiple wavelength sensor emitters
US10327683B2 (en) 2005-03-01 2019-06-25 Cercacor Laboratories, Inc. Multiple wavelength sensor emitters
US11545263B2 (en) 2005-03-01 2023-01-03 Cercacor Laboratories, Inc. Multiple wavelength sensor emitters
US9167995B2 (en) 2005-03-01 2015-10-27 Cercacor Laboratories, Inc. Physiological parameter confidence measure
US8912909B2 (en) 2005-03-01 2014-12-16 Cercacor Laboratories, Inc. Noninvasive multi-parameter patient monitor
JP4879913B2 (en) * 2005-03-01 2012-02-22 マシモ・ラボラトリーズ・インコーポレーテッド Multi-wavelength sensor board
US9750443B2 (en) 2005-03-01 2017-09-05 Cercacor Laboratories, Inc. Multiple wavelength sensor emitters
US10984911B2 (en) 2005-03-01 2021-04-20 Cercacor Laboratories, Inc. Multiple wavelength sensor emitters
JP2006273634A (en) * 2005-03-28 2006-10-12 Matsushita Electric Works Ltd Alumina substrate and its circuit forming method
JP2007059905A (en) * 2005-08-22 2007-03-08 Avago Technologies Ecbu Ip (Singapore) Pte Ltd Optoelectronic package, and method and system of manufacturing and using the same
JP2007090343A (en) * 2005-09-20 2007-04-12 Summit Business Products Inc Ultraviolet light-emitting diode device
JP4653712B2 (en) * 2005-09-20 2011-03-16 サミット ビジネス プロダクツ,インコーポレイテッド UV light emitting diode device
KR100643583B1 (en) * 2005-11-10 2006-11-10 루미마이크로 주식회사 Module of multi-color led package using metal pcb, and manufacturing method thereof
JP4594859B2 (en) * 2005-12-19 2010-12-08 株式会社 日立ディスプレイズ LIGHTING DEVICE AND IMAGE DISPLAY DEVICE USING THE SAME
JP2007172872A (en) * 2005-12-19 2007-07-05 Hitachi Displays Ltd Lighting system, and image display device using the same
JP2007235085A (en) * 2006-02-03 2007-09-13 Hitachi Chem Co Ltd Method of manufacturing package substrate for packaging optical semiconductor element and method of manufacturing optical semiconductor device using the same
KR100969907B1 (en) 2006-02-23 2010-07-13 파나소닉 전공 주식회사 Led luminaire
JP2007273603A (en) * 2006-03-30 2007-10-18 Kyocera Corp Wiring board for light emitting element, and light emitting device
JP2008091161A (en) * 2006-09-29 2008-04-17 Matsushita Electric Works Ltd Led lighting system
US7992445B2 (en) 2006-10-02 2011-08-09 Panasonic Electric Works Co., Ltd. Pressure sensor
JP2008089412A (en) * 2006-10-02 2008-04-17 Matsushita Electric Works Ltd Pressure sensor
JP2007129273A (en) * 2007-02-23 2007-05-24 Matsushita Electric Works Ltd Method for manufacturing led display apparatus
JP4609441B2 (en) * 2007-02-23 2011-01-12 パナソニック電工株式会社 Manufacturing method of LED display device
JP2008235824A (en) * 2007-03-23 2008-10-02 Sharp Corp Light-mitting device and method of manufacturing the same
US10251586B2 (en) 2007-04-21 2019-04-09 Masimo Corporation Tissue profile wellness monitor
US9848807B2 (en) 2007-04-21 2017-12-26 Masimo Corporation Tissue profile wellness monitor
US11647923B2 (en) 2007-04-21 2023-05-16 Masimo Corporation Tissue profile wellness monitor
US10980457B2 (en) 2007-04-21 2021-04-20 Masimo Corporation Tissue profile wellness monitor
US8965471B2 (en) 2007-04-21 2015-02-24 Cercacor Laboratories, Inc. Tissue profile wellness monitor
WO2009038072A1 (en) * 2007-09-21 2009-03-26 Showa Denko K.K. Light-emitting device, display, and light-emitting device manufacturing method
JPWO2009038072A1 (en) * 2007-09-21 2011-01-06 昭和電工株式会社 Light emitting device, display device, and method of manufacturing light emitting device
JP2009135080A (en) * 2007-11-28 2009-06-18 Ind Technol Res Inst Light source device
JP2010056192A (en) * 2008-08-27 2010-03-11 Kyocera Corp Surface-emitting irradiation device, surface-emitting irradiation equipment, and droplet discharge equipment
JP2011082259A (en) * 2009-10-05 2011-04-21 Dainippon Printing Co Ltd Led element mounting member and method for manufacturing the same, and led element package and method for manufacturing the same
US9839381B1 (en) 2009-11-24 2017-12-12 Cercacor Laboratories, Inc. Physiological measurement system with automatic wavelength adjustment
US11534087B2 (en) 2009-11-24 2022-12-27 Cercacor Laboratories, Inc. Physiological measurement system with automatic wavelength adjustment
US10750983B2 (en) 2009-11-24 2020-08-25 Cercacor Laboratories, Inc. Physiological measurement system with automatic wavelength adjustment
US10729402B2 (en) 2009-12-04 2020-08-04 Masimo Corporation Calibration for multi-stage physiological monitors
US11571152B2 (en) 2009-12-04 2023-02-07 Masimo Corporation Calibration for multi-stage physiological monitors
JP2014502030A (en) * 2011-01-05 2014-01-23 深▲せん▼市衆明半導体照明有限公司 LED module and lighting device
KR101453748B1 (en) * 2011-12-30 2014-10-23 루미마이크로 주식회사 Light emitting diode package
CN102760730A (en) * 2012-07-20 2012-10-31 歌尔声学股份有限公司 Light-emitting diode device
JP2014130967A (en) * 2012-12-28 2014-07-10 Nichia Chem Ind Ltd Light emitting device
JP2016207757A (en) * 2015-04-17 2016-12-08 シチズン電子株式会社 Led light-emitting device and manufacturing method therefor
JP2017050344A (en) * 2015-08-31 2017-03-09 シチズン電子株式会社 Light-emitting device
JP2017085012A (en) * 2015-10-29 2017-05-18 パナソニックIpマネジメント株式会社 Mold circuit component and electronic circuit device including the same
US11063176B2 (en) 2015-12-21 2021-07-13 Nichia Corporation Light emitting device including covering member and first and second metal layers
US10199533B2 (en) 2015-12-21 2019-02-05 Nichia Corporation Method of manufacturing light emitting device
JP2017118098A (en) * 2015-12-21 2017-06-29 日亜化学工業株式会社 Method of manufacturing light-emitting device
US10770618B2 (en) 2015-12-21 2020-09-08 Nichia Corporation Method of manufacturing light emitting device
US10497843B2 (en) 2016-09-29 2019-12-03 Nichia Corporation Light emitting device
JP2018061027A (en) * 2016-09-29 2018-04-12 日亜化学工業株式会社 Method for manufacturing light-emitting device
US10270016B2 (en) 2016-09-29 2019-04-23 Nichia Corporation Light emitting device
CN113471239A (en) * 2021-06-30 2021-10-01 上海天马微电子有限公司 Display panel and display device
CN113471239B (en) * 2021-06-30 2024-04-26 上海天马微电子有限公司 Display panel and display device

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