JP2005347375A - Stem for light-emitting element, and optical semiconductor device - Google Patents

Stem for light-emitting element, and optical semiconductor device Download PDF

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JP2005347375A
JP2005347375A JP2004162930A JP2004162930A JP2005347375A JP 2005347375 A JP2005347375 A JP 2005347375A JP 2004162930 A JP2004162930 A JP 2004162930A JP 2004162930 A JP2004162930 A JP 2004162930A JP 2005347375 A JP2005347375 A JP 2005347375A
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stem
bright
plating layer
emitting element
light
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Kenji Kawamura
賢二 川村
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Shinko Electric Industries Co Ltd
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Shinko Electric Industries Co Ltd
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Priority to JP2004162930A priority Critical patent/JP2005347375A/en
Priority to KR1020050041890A priority patent/KR20060046091A/en
Priority to TW094117422A priority patent/TW200603446A/en
Publication of JP2005347375A publication Critical patent/JP2005347375A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a stem for a light-emitting element which stem suppresses substantially a decrease in the reflectance of light in a range of UV-rays having a wavelength of 400 nm or less. <P>SOLUTION: According to the stem for the light-emitting element, a reflective surface for reflecting light from a light-emitting diode 20 is formed on a mounting surface of the metal stem 10 on which the light-emitting diode 20 is mounted. The bare surface of the stem 10, where the reflective surface is formed, is coated with a bright nickel plated layer, which is then further coated with a bright silver plated layer, where UV-rays incident thereon with wavelength of 400 nm show a reflectance of 80% or higher. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は発光素子用ステム及び光半導体装置に関し、更に詳細には発光素子が搭載される金属製のステムの素地面に、光沢めっき層が形成されて成る発光素子用ステム、及び前記発光素子用ステムを用いた光半導体装置に関する。   The present invention relates to a stem for a light emitting element and an optical semiconductor device, and more specifically, a stem for a light emitting element in which a gloss plating layer is formed on a ground surface of a metal stem on which the light emitting element is mounted, and for the light emitting element. The present invention relates to an optical semiconductor device using a stem.

発光素子が搭載された光半導体装置としては、下記特許文献１に記載された図３（ａ）（ｂ）に示すものが知られている。
図３（ａ）（ｂ）に示す光半導体装置では、表面に銅めっきや銀めっきを施して形成しためっき皮膜８で覆われた金属製の一対のリード線１，２が設けられており、リード線１の先端部に光反射機能を有する凹部４が形成されている。
かかる凹部４内には、リード線２とワイヤ６によってボンディングされた発光素子５が搭載されており、発光素子５及びワイヤ６は、透明又は半透明の樹脂７によって封止されている。
特開昭５７−４１８４号（第１図） As an optical semiconductor device on which a light emitting element is mounted, the one shown in FIGS. 3A and 3B described in Patent Document 1 below is known.
In the optical semiconductor device shown in FIGS. 3A and 3B, a pair of metal lead wires 1 and 2 covered with a plating film 8 formed by applying copper plating or silver plating on the surface are provided. A recess 4 having a light reflecting function is formed at the tip of the lead wire 1.
A light emitting element 5 bonded by a lead wire 2 and a wire 6 is mounted in the recess 4, and the light emitting element 5 and the wire 6 are sealed with a transparent or translucent resin 7.
JP 57-4184 (Fig. 1)

図３に示す光半導体装置によれば、発光素子５で発光された光のうち、凹部４に向けて発光された光は凹部４の反射面によって光半導体装置の先端部方向に反射される。このため、発光素子５から光半導体装置の先端部方向に発光された光と共に、発光素子５から凹部４の方向に発光された光も、光半導体装置の先端部から照射される。
ところで、リード線１の先端部に形成された凹部４の表面には、通常、光沢銀めっきが施されて光反射機能を付与される。
光沢銀めっきによって金属表面に形成した光沢銀めっき皮膜の反射率は、図４に示す様に、他の光沢めっき皮膜よりも優れている。
しかしながら、光沢銀めっき皮膜でも、波長５００〜１０００ｎｍの波長領域における反射率は８０〜９０％であり、波長が４００ｎｍ以下の紫外線領域では、その反射率が８０％未満に急激に低下する。この様に、波長が４００ｎｍ以下の紫外線領域での反射率が急激に低下する凹部４を具備する光半導体装置を用いた画像処理装置で画像処理を行なうと、良好な画像が得られ難い。
そこで、本発明の課題は、波長が４００ｎｍ以下の紫外線領域での反射率の低下を可及的に少なくし得る発光素子用ステム及び光半導体装置を提供することにある。 According to the optical semiconductor device shown in FIG. 3, among the light emitted from the light emitting element 5, the light emitted toward the concave portion 4 is reflected by the reflecting surface of the concave portion 4 toward the tip portion of the optical semiconductor device. For this reason, the light emitted from the light emitting element 5 in the direction of the recess 4 together with the light emitted from the light emitting element 5 in the direction of the front end of the optical semiconductor device is also emitted from the front end of the optical semiconductor device.
By the way, the surface of the concave portion 4 formed at the tip of the lead wire 1 is usually subjected to bright silver plating to give a light reflecting function.
The reflectance of the bright silver plating film formed on the metal surface by the bright silver plating is superior to other bright plating films as shown in FIG.
However, even in the bright silver plating film, the reflectance in the wavelength region of 500 to 1000 nm is 80 to 90%, and in the ultraviolet region where the wavelength is 400 nm or less, the reflectance rapidly decreases to less than 80%. As described above, when image processing is performed by an image processing apparatus using an optical semiconductor device including the concave portion 4 in which the reflectance in the ultraviolet region having a wavelength of 400 nm or less rapidly decreases, it is difficult to obtain a good image.
Therefore, an object of the present invention is to provide a light emitting element stem and an optical semiconductor device capable of minimizing a decrease in reflectance in an ultraviolet region having a wavelength of 400 nm or less.

本発明者は、先ず、従来の発光素子用ステムについて、波長が４００ｎｍ以下の紫外線領域での反射率が急激に低下する原因について検討したところ、波長の短い紫外光は、光沢銀めっき皮膜の表面に形成された微細凹凸によって乱反射され易いこと、光沢銀めっき皮膜の表面に形成される微小凹凸は、光沢銀めっき皮膜を形成するステムの表面粗さに影響され易いこと、ステムの表面粗さを更に少なくすることは至難のことであることを知った。
このため、本発明者は、ステムの表面に光沢めっき下地層を形成した後、この光沢めっき下地層の表面に光沢銀めっき層を形成することによって、波長４００ｎｍの紫外線光の反射率を向上できることを見出し、本発明に到達した。 The present inventor first examined the cause of a sharp decrease in reflectance in the ultraviolet region having a wavelength of 400 nm or less with respect to a conventional stem for a light emitting element. Ultraviolet light having a short wavelength is the surface of the bright silver plating film. It is easy to be irregularly reflected by the fine irregularities formed on the surface, the minute irregularities formed on the surface of the bright silver plating film are easily affected by the surface roughness of the stem forming the bright silver plating film, and the surface roughness of the stem is reduced. I knew that it would be extremely difficult to make less.
Therefore, the present inventor can improve the reflectance of ultraviolet light having a wavelength of 400 nm by forming a bright silver plating layer on the surface of the bright plating base layer after forming the bright plating base layer on the surface of the stem. And reached the present invention.

すなわち、本発明は、発光素子が搭載される金属製のステムの搭載面に、前記発光素子からの光を反射する反射面が形成された発光素子用ステムにおいて、該反射面が形成されるステムの素地面に光沢めっき下地層が形成されていると共に、前記光沢めっき下地層上に光沢銀めっき層が形成され、且つ前記光沢銀めっき層に照射した波長４００ｎｍの紫外線の反射率が８０％以上であることを特徴とする発光素子用ステムていることを特徴とする発光素子用ステムにある。
また、本発明は、この発光素子用ステムに形成された発光素子搭載部に、発光素子が搭載されていることを特徴とする光半導体装置にある。 That is, the present invention provides a stem for a light emitting element in which a reflective surface for reflecting light from the light emitting element is formed on a mounting surface of a metal stem on which the light emitting element is mounted. A bright plating underlayer is formed on the substrate, and a bright silver plating layer is formed on the bright plating underlayer, and the reflectance of ultraviolet light having a wavelength of 400 nm irradiated on the bright silver plating layer is 80% or more. The stem for a light emitting element is characterized by being a stem for a light emitting element.
The present invention also provides an optical semiconductor device in which a light emitting element is mounted on a light emitting element mounting portion formed on the stem for the light emitting element.

かかる本発明において、光沢めっき下地層を、光沢ニッケルめっき層とし、ステムの素地面と前記光沢ニッケルめっき層との間に、ワット浴を用いた電解ニッケルめっきによるニッケルめっき層を形成することによって、ステムの素材色調が光沢銀めっき層に影響することを効果的に防止できる。
更に、光沢めっき下地層の厚さを２μｍ以上とし、光沢銀めっき層の厚さを３μｍ以上とすることが好ましい。
また、金属製のステムとしては、Fe-Ni-Co合金から成るステムを好適に採用でき、発光素子として、発光ダイオードを好適に採用できる。 In the present invention, the bright plating base layer is a bright nickel plating layer, and a nickel plating layer by electrolytic nickel plating using a Watt bath is formed between the stem ground surface and the bright nickel plating layer, It is possible to effectively prevent the material color tone of the stem from affecting the bright silver plating layer.
Furthermore, it is preferable that the thickness of the bright plating base layer is 2 μm or more and the thickness of the bright silver plating layer is 3 μm or more.
In addition, a stem made of an Fe—Ni—Co alloy can be suitably employed as the metal stem, and a light emitting diode can be favorably employed as the light emitting element.

本発明に係る発光素子用ステムによれば、発光素子が搭載される金属製のステムの搭載面に形成された反射面は、ステムの素地面に形成された光沢めっき下地層と、この光沢めっき下地層上に形成された光沢銀めっき層とから構成されている。このため、ステムの素地面の表面粗さは光沢めっき下地層によって吸収でき、平坦な光沢めっき下地層の表面上に光沢銀めっき層を形成できる。
このため、ステムの素地面に直接光沢銀めっき層を形成した場合に比較して、波長４００ｎｍ近傍の紫外線の反射率を向上でき、光沢銀めっき層に照射した波長４００ｎｍの紫外線の反射率を８０％以上とすることができる。 According to the stem for a light-emitting element according to the present invention, the reflective surface formed on the mounting surface of the metal stem on which the light-emitting element is mounted includes the bright plating base layer formed on the bare surface of the stem, and the bright plating. And a bright silver plating layer formed on the underlayer. For this reason, the surface roughness of the base surface of the stem can be absorbed by the bright plating underlayer, and a bright silver plating layer can be formed on the surface of the flat bright plating underlayer.
For this reason, compared with the case where the bright silver plating layer is formed directly on the bare surface of the stem, it is possible to improve the reflectivity of the ultraviolet light in the vicinity of the wavelength of 400 nm and the reflectivity of the ultraviolet light of the wavelength of 400 nm irradiated to the bright silver plating layer is % Or more.

本発明に係る光半導体装置の一例を図１に示す。図１に示す光半導体装置は、Fe-Ni-Co合金（コバール）から成る円柱状のステム１０には、その一面側にすり鉢状の凹部１８が形成されている。かかる凹部１８の底面は、発光ダイオード２０が搭載される発光素子搭載部であり、凹部１８の内壁面は、凹部１８の底面に搭載された発光素子としての発光ダイオード２０から発光される光の反射面に形成されている。
また、ステム１０に形成された貫通孔１２内には、リード線１４の一端部近傍が挿入されてガラス１６によって封着されている。このリード線１４は、その一端部がステム１０の一面側に突出しており、リード線１４の突出先端と凹部１８の底面に搭載された発光ダイオード２０とがワイヤ２４によってボンディングされている。
更に、かかるステム１０の他面側には、アースリードとしてのリード線２２の一端が装着されている。
尚、ステム１０の一面側に搭載された発光ダイオード２０やワイヤ２４は、ステム１０に装着されるガラス板２７付きの金属製キャップ２６によって封止される。 An example of an optical semiconductor device according to the present invention is shown in FIG. In the optical semiconductor device shown in FIG. 1, a mortar-shaped recess 18 is formed on one side of a cylindrical stem 10 made of an Fe—Ni—Co alloy (Kovar). The bottom surface of the recess 18 is a light emitting element mounting portion on which the light emitting diode 20 is mounted, and the inner wall surface of the recess 18 is a reflection of light emitted from the light emitting diode 20 as a light emitting element mounted on the bottom surface of the recess 18. Formed on the surface.
Further, in the through hole 12 formed in the stem 10, the vicinity of one end of the lead wire 14 is inserted and sealed with the glass 16. One end portion of the lead wire 14 protrudes to one surface side of the stem 10, and the protruding tip of the lead wire 14 and the light emitting diode 20 mounted on the bottom surface of the recess 18 are bonded by a wire 24.
Furthermore, one end of a lead wire 22 as an earth lead is attached to the other surface side of the stem 10.
The light emitting diode 20 and the wire 24 mounted on one surface side of the stem 10 are sealed by a metal cap 26 with a glass plate 27 attached to the stem 10.

図１に示すステム１０には、リード線１４，２２を含むステム１０（以下、単にステム１０と称することがある）の素地面の全面に、光沢めっき下地層としての光沢ニッケルめっき層が形成されており、この光沢ニッケルめっき層上に、光沢銀めっき層が形成されている。
この様に、光沢ニッケルめっき層を形成することによって、ステム１０の素地面の表面粗さを光沢ニッケルめっき層によって吸収し、平坦な光沢ニッケルめっき層の表面上に光沢銀めっき層を形成できる。このため、形成された光沢銀めっき層の表面の平坦性を向上できる。
かかる光沢ニッケルめっき層としては、その厚さを２μｍ以上（特に２〜５μｍ）とし、光沢銀めっき層の厚さを３μｍ以上（特に３〜７μｍ）とすることが好ましい。光沢ニッケルめっき層の厚さを２μｍ未満とすると、ステム１０の素地面の表面粗さを充分に吸収し難くなる傾向にある。
尚、ステムの素地面に形成するめっき層の厚さの上限は、経済上の観点から１０μｍ程度とすることが好ましい。 In the stem 10 shown in FIG. 1, a bright nickel plating layer as a bright plating underlayer is formed on the entire surface of the stem 10 including the lead wires 14 and 22 (hereinafter sometimes simply referred to as the stem 10). A bright silver plating layer is formed on the bright nickel plating layer.
Thus, by forming the bright nickel plating layer, the surface roughness of the bare surface of the stem 10 can be absorbed by the bright nickel plating layer, and the bright silver plating layer can be formed on the surface of the flat bright nickel plating layer. For this reason, the flatness of the surface of the formed bright silver plating layer can be improved.
The bright nickel plating layer preferably has a thickness of 2 μm or more (particularly 2 to 5 μm), and the bright silver plating layer preferably has a thickness of 3 μm or more (particularly 3 to 7 μm). When the thickness of the bright nickel plating layer is less than 2 μm, it tends to be difficult to sufficiently absorb the surface roughness of the bare surface of the stem 10.
In addition, it is preferable that the upper limit of the thickness of the plating layer formed on the bare base of the stem is about 10 μm from the viewpoint of economy.

図１に示すステム１０の素地面の全面に光沢ニッケルめっき層を形成する際には、ステム１０を光沢ニッケル浴に浸漬して電解ニッケルめっきを施す。この光沢ニッケル浴としては、光沢剤としてサッカリン化合物が添加された公知の光沢ニッケル浴、例えば化学便覧「応用化学編Ｉプロセス編」第４１２頁表５．７５（日本化学会編、昭和６３年１１月
１５日第２刷発行、丸善株式会社）に掲載されている光沢ニッケル浴を用いることができる。
かかる光沢ニッケルめっき層上に、光沢銀めっき層を形成する際には、光沢ニッケルめっき層を形成したステム１０を光沢銀めっき浴に浸漬して電解銀めっきを施す。この光沢銀めっき浴としては、例えばシアン化銀カリウム、シアン化カリウム及び炭酸ナトリウムに、光沢剤としての二酸化セレンや市販されている光沢剤を添加した光沢銀めっき浴を用いることができる。 When the bright nickel plating layer is formed on the entire surface of the base 10 of the stem 10 shown in FIG. 1, the stem 10 is immersed in a bright nickel bath and subjected to electrolytic nickel plating. As this bright nickel bath, a known bright nickel bath to which a saccharin compound is added as a brightener, for example, Chemical Handbook "Applied Chemistry Edition I Process Edition", page 412, Table 5.75 (Edited by the Chemical Society of Japan, November 1988) Luminous nickel baths published on March 15 in the second printing, Maruzen Co., Ltd.) can be used.
When forming a bright silver plating layer on the bright nickel plating layer, electrolytic silver plating is performed by immersing the stem 10 on which the bright nickel plating layer is formed in a bright silver plating bath. As this bright silver plating bath, for example, a bright silver plating bath obtained by adding selenium dioxide as a brightener or a commercially available brightener to silver cyanide potassium, potassium cyanide and sodium carbonate can be used.

この様に、ステム１０の素地面に直接光沢ニッケルめっき層を形成すると、ステムの素材色調が光沢銀めっき層に影響を及ぼす場合がある。この場合、ステム１０の素地面にワット浴を用いた電解ニッケルめっきによるニッケルめっき層（以下、ワットＮｉめっき層と称することがある）を形成した後、光沢ニッケルめっき層を形成することによって、ステムの素材色調の影響を防止できる。かかるワットＮｉめっき層は、２〜５μｍ程度とすることが好ましい。このワット浴としては、公知のワット浴、例えば化学便覧「応用化学編Ｉプロセス編」第４１２頁表５．７３（日本化学会編、昭和６３年１１月１５日第２刷発行、丸善株式会社）に掲載されているワット浴を用いることができる。
また、光沢ニッケルめっき層上に光沢銀めっき層を形成する際に、両層の密着性を向上すべく、光沢ニッケルめっき層上に、厚さ１μｍ程度の銀ストライクめっき層を形成した後、光沢銀めっき層を形成することが好ましい。この銀ストライクめっき層を形成するめっき浴も、公知の銀ストライク浴、例えば化学便覧「応用化学編Ｉプロセス編」第４１４頁表５．８３（日本化学会編、昭和６３年１１月１５日第２刷発行、丸善株式会社）に掲載されている銀ストライク浴を用いることができる。 In this manner, when the bright nickel plating layer is formed directly on the base of the stem 10, the material color tone of the stem may affect the bright silver plating layer. In this case, a nickel plating layer by electrolytic nickel plating using a Watt bath (hereinafter sometimes referred to as a Watt Ni plating layer) is formed on the base of the stem 10, and then a bright nickel plating layer is formed. The influence of the material color tone can be prevented. The Watt Ni plating layer is preferably about 2 to 5 μm. As this watt bath, a known watt bath, for example, Chemical Handbook "Applied Chemistry I Process", page 412, Table 5.73 (Edited by The Chemical Society of Japan, November 15, 1988, second printing, Maruzen Co., Ltd.) The watt bath listed in) can be used.
In addition, when forming a bright silver plating layer on the bright nickel plating layer, after forming a silver strike plating layer having a thickness of about 1 μm on the bright nickel plating layer in order to improve the adhesion between both layers, the gloss It is preferable to form a silver plating layer. The plating bath for forming this silver strike plating layer is also a known silver strike bath, for example, Chemical Handbook “Applied Chemistry I Process”, page 414, Table 5.83 (The Chemical Society of Japan, November 15, 1988, No. 15). The silver strike bath published in 2nd printing, Maruzen Co., Ltd.) can be used.

これまで説明した様に、素地面の全面に形成した光沢ニッケルめっき層上に、光沢銀めっき層を形成したステム１０では、その光沢銀めっき層に波長４００ｎｍの紫外線を照射したときの反射率は８０％以上を呈し、素地面に直接光沢銀めっき層を形成した場合に比較して、波長４００ｎｍ近傍の紫外線領域での反射率を向上できる。
更に、波長５００〜１０００ｎｍの波長領域でも、その反射率は９０％を越えており、素地面に直接光沢銀めっき層を形成した場合よりも反射率を向上できる。
以上、説明したステム１０では、リード線１４，２２を含むステム１０の素地面の全面に光沢ニッケルめっき層及び光沢銀めっき層を形成しているが、凹部１８が形成されたステム１０の一面側のみに光沢ニッケルめっき層及び光沢銀めっき層を形成してもよい。
また、光沢めっき下地層としての光沢ニッケルめっき層を形成しているが、光沢ニッケルめっき層に代えて光沢銅めっき層を形成してもよい。 As explained so far, in the stem 10 in which the bright silver plating layer is formed on the bright nickel plating layer formed on the entire surface of the substrate, the reflectance when the bright silver plating layer is irradiated with ultraviolet light having a wavelength of 400 nm is It exhibits 80% or more, and the reflectance in the ultraviolet region near the wavelength of 400 nm can be improved as compared with the case where the bright silver plating layer is directly formed on the ground surface.
Further, even in the wavelength region of 500 to 1000 nm, the reflectance exceeds 90%, and the reflectance can be improved as compared with the case where the bright silver plating layer is directly formed on the substrate.
In the stem 10 described above, the bright nickel plating layer and the bright silver plating layer are formed on the entire surface of the stem 10 including the lead wires 14 and 22, but one side of the stem 10 in which the recess 18 is formed. Only a bright nickel plating layer and a bright silver plating layer may be formed.
Further, although the bright nickel plating layer is formed as the bright plating underlayer, a bright copper plating layer may be formed instead of the bright nickel plating layer.

図１に示すFe-Ni-Co合金（コバール）から成る円柱状のステム１０及びリード線１４，２２の素地面の全面を下記表１の組成のワット浴に浸漬し、浴温６０℃で電流密度０．５Ａ／ｄｍ2の条件で電解ニッケルめっきを施して、平均厚さ２μｍのニッケルめっき層を形成した。

Figure 2005347375
更に、素地全面にニッケルめっき層を形成したリード線１４，２２を含むステム１０を、下記表２に示す光沢ニッケル浴に浸漬し、浴温５０℃で電流密度０．５Ａ／ｄｍ2の条件で電解ニッケルめっきを施して、リード線１４，２２を含むステム１０に形成したニッケルめっき層の全面に平均厚さ７μｍの光沢ニッケルめっき層を形成した。
Figure 2005347375
 この様に、素地全面にニッケルめっき層及び光沢ニッケルめっき層を形成したリード線１４，２２を含むステム１０を、下記表３に示す銀ストライク浴に浸漬し、浴温２５℃で４Ｖ定電圧の条件で電解銀めっきを施して、リード線１４，２２を含むステム１０の光沢ニッケルめっき層の全面に平均厚さ１μｍの銀ストライクめっき層を形成した。
Figure 2005347375
 その後、素地全面にニッケルめっき層、光沢ニッケルめっき層及び銀ストライクめっき層を形成したリード線１４，２２を含むステム１０を、下記表４に示す光沢銀めっき浴に浸漬し、浴温２５℃で電流密度１．０Ａ／ｄｍ2の条件で電解銀めっきを施して、リード線１４，２２を含むステム１０の銀ストライクめっき層の全面に平均厚さが３μｍ、５μｍ及び７μｍの光沢銀めっき層を形成した。
Figure 2005347375
 1 is immersed in a watt bath having the composition shown in Table 1 below, and a current at a bath temperature of 60 ° C. is obtained. The cylindrical stem 10 and the lead wires 14 and 22 made of Fe—Ni—Co alloy (Kovar) shown in FIG. Electrolytic nickel plating was performed under conditions of a density of 0.5 A / dm 2 to form a nickel plating layer having an average thickness of 2 μm.
Figure 2005347375
 Further, the stem 10 including the lead wires 14 and 22 having the nickel plating layer formed on the entire surface of the substrate is immersed in the bright nickel bath shown in Table 2 below, and the bath temperature is 50 ° C. and the current density is 0.5 A / dm 2 . Electrolytic nickel plating was performed to form a bright nickel plating layer having an average thickness of 7 μm on the entire surface of the nickel plating layer formed on the stem 10 including the lead wires 14 and 22.
Figure 2005347375
 In this manner, the stem 10 including the lead wires 14 and 22 having the nickel plating layer and the bright nickel plating layer formed on the entire surface of the substrate is immersed in the silver strike bath shown in Table 3 below, and the bath temperature is 25 ° C. and the constant voltage is 4V. Electrolytic silver plating was performed under the conditions to form a silver strike plating layer having an average thickness of 1 μm on the entire surface of the bright nickel plating layer of the stem 10 including the lead wires 14 and 22.
Figure 2005347375
 Thereafter, the stem 10 including the lead wires 14 and 22 having the nickel plating layer, the bright nickel plating layer, and the silver strike plating layer formed on the entire surface of the substrate is immersed in the bright silver plating bath shown in Table 4 below, and the bath temperature is 25 ° C. A bright silver plating layer having an average thickness of 3 μm, 5 μm, and 7 μm is applied to the entire surface of the silver strike plating layer of the stem 10 including the lead wires 14 and 22 by performing electrolytic silver plating under a current density of 1.0 A / dm 2. Formed.
Figure 2005347375

実施例１で得た素地全面にニッケルめっき層、光沢ニッケルめっき層、銀ストライクめっき層及び光沢銀めっき層を形成したリード線１４，２２を含むステム１０に種々の波長の光を照射し、その反射率を測定した。かかる反射率について、光沢銀めっき層の厚さを、３μｍ、５μｍ、７μｍとしたステム１０の各々について測定した結果を図２に示す。
実施例１で得たステム１０では、波長４００ｎｍの紫外線を照射したときの反射率は８０％以上を呈し、素地面に直接光沢銀めっき層を形成した図４に示す反射率に比較して、波長４００ｎｍ近傍の紫外線領域での反射率が向上されていることが判る。
更に、波長５００〜１０００ｎｍの波長領域でも、その反射率は９０％を越えており、素地面に直接光沢銀めっき層を形成した図４に示す反射率が向上されていることも判る。 The stem 10 including the lead wires 14 and 22 having the nickel plating layer, the bright nickel plating layer, the silver strike plating layer, and the bright silver plating layer formed on the entire surface of the substrate obtained in Example 1 is irradiated with light of various wavelengths. The reflectance was measured. FIG. 2 shows the results of measuring the reflectance of the stem 10 in which the thickness of the bright silver plating layer is 3 μm, 5 μm, and 7 μm.
In the stem 10 obtained in Example 1, the reflectance when irradiated with ultraviolet rays having a wavelength of 400 nm is 80% or more, and compared with the reflectance shown in FIG. 4 in which a bright silver plating layer is directly formed on the ground surface, It can be seen that the reflectance in the ultraviolet region near the wavelength of 400 nm is improved.
Furthermore, even in the wavelength range of 500 to 1000 nm, the reflectance exceeds 90%, and it can be seen that the reflectance shown in FIG. 4 in which the bright silver plating layer is directly formed on the substrate is improved.

本発明に係る光半導体装置の一例を説明するための断面図である。It is sectional drawing for demonstrating an example of the optical semiconductor device which concerns on this invention. 本発明に係る発光素子用ステムの反射率についてのグラフである。It is a graph about the reflectance of the stem for light emitting elements which concerns on this invention. 従来の光半導体装置を説明するための斜視図及び断面図である。It is the perspective view and sectional drawing for demonstrating the conventional optical semiconductor device. ステムの素地面に直接光沢銀めっき層を形成した場合の反射率についてのグラフである。It is a graph about the reflectance at the time of forming a bright silver plating layer directly on the bare ground of a stem.

符号の説明Explanation of symbols

１０ ステム
１２ 貫通孔
１４，２２ リード線
１６ ガラス
１８ 凹部
２０ 発光ダイオード（発光素子）
２４ ワイヤ
２６ 透明キャップ DESCRIPTION OF SYMBOLS 10 Stem 12 Through-hole 14,22 Lead wire 16 Glass 18 Recessed part 20 Light emitting diode (light emitting element)
24 wire 26 transparent cap

Claims (6)

発光素子が搭載される金属製のステムの搭載面に、前記発光素子からの光を反射する反射面が形成された発光素子用ステムにおいて、
該反射面が形成されるステムの素地面に光沢めっき下地層が形成されていると共に、前記光沢めっき下地層上に光沢銀めっき層が形成され、
且つ前記光沢銀めっき層に照射した波長４００ｎｍの紫外線の反射率が８０％以上であることを特徴とする発光素子用ステム。 In the stem for a light emitting element in which a reflection surface that reflects light from the light emitting element is formed on a mounting surface of a metal stem on which the light emitting element is mounted,
A bright plating underlayer is formed on the base of the stem on which the reflecting surface is formed, and a bright silver plating layer is formed on the bright plating underlayer,
A stem for a light-emitting element, wherein the reflectance of ultraviolet light having a wavelength of 400 nm irradiated on the bright silver plating layer is 80% or more. 光沢めっき下地層が、光沢ニッケルめっき層であって、ステムの素地面と前記光沢ニッケルめっき層との間に、ワット浴を用いた電解ニッケルめっきによるニッケルめっき層が形成されている請求項１記載の発光素子用ステム。   2. The bright plating underlayer is a bright nickel plating layer, and a nickel plating layer formed by electrolytic nickel plating using a Watt bath is formed between a bare ground surface of the stem and the bright nickel plating layer. Stem for light emitting device. 光沢めっき下地層の厚さが２μｍ以上であり、光沢銀めっき層の厚さが３μｍ以上である請求項１又は請求項２記載の発光素子用ステム。   The stem for a light emitting device according to claim 1 or 2, wherein the thickness of the bright plating base layer is 2 µm or more, and the thickness of the bright silver plating layer is 3 µm or more. 金属製のステムが、Fe-Ni-Co合金から成るステムである請求項１〜３のいずれか一項記載の発行素子用ステム。   The stem for an issuing element according to any one of claims 1 to 3, wherein the metal stem is a stem made of an Fe-Ni-Co alloy. 発光素子が、発光ダイオードである請求項１〜４のいずれか一項記載の発光素子用ステム。   The stem for a light emitting element according to any one of claims 1 to 4, wherein the light emitting element is a light emitting diode. 請求項１〜５のいずれか一項記載の発光素子用ステムに形成された発光素子搭載部に、発光素子が搭載されていることを特徴とする光半導体装置。   A light-emitting element is mounted on a light-emitting element mounting portion formed on the light-emitting element stem according to claim 1.
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JP2007012822A (en) * 2005-06-29 2007-01-18 Ngk Spark Plug Co Ltd Ceramic package for light-emitting device, and its manufacturing method
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