JPH0818071A - Manufacture of individual diode device - Google Patents
Manufacture of individual diode deviceInfo
- Publication number
- JPH0818071A JPH0818071A JP12685895A JP12685895A JPH0818071A JP H0818071 A JPH0818071 A JP H0818071A JP 12685895 A JP12685895 A JP 12685895A JP 12685895 A JP12685895 A JP 12685895A JP H0818071 A JPH0818071 A JP H0818071A
- Authority
- JP
- Japan
- Prior art keywords
- resistor
- film
- layer
- diode
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、１つのパッケージに
収納された個別ダイオード装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an individual diode device housed in one package.
【０００２】[0002]
【従来の技術】ビデオテープレコーダ等、多数の各種電
子回路を複合して構成される電子機器では、その構成回
路を集積回路（ＩＣ）化することが機能面で不利になる
場合や回路定数の設定等によりＩＣ化が困難な場合があ
る。例えばダイオードは、その整流特性と順方向電圧降
下特性を利用したクリップ回路、スライス回路、クラン
プ回路、電圧電流特性を利用した関数発生回路、また、
整流特性を利用した電流の逆流防止回路など様々な回路
部分に用いられるが、このように種々の目的に使用可能
なダイオードは個別部品としての用途も多く、他のチッ
プ部品とともにプリント基板に個別に実装されている。2. Description of the Related Art In an electronic device such as a video tape recorder which is composed of a large number of various electronic circuits in combination, it may be disadvantageous in terms of function to integrate the constituent circuits into an integrated circuit (IC) or a circuit constant It may be difficult to form an IC due to settings or the like. For example, a diode is a clipping circuit that uses its rectification characteristics and forward voltage drop characteristics, a slice circuit, a clamp circuit, a function generation circuit that uses voltage-current characteristics, and
It is used in various circuit parts such as a current backflow prevention circuit that uses rectification characteristics, but diodes that can be used for various purposes are often used as individual parts in this way, and they are individually mounted on the printed circuit board together with other chip parts. It is implemented.
【０００３】[0003]
【発明が解決しようとする課題】ダイオードを用いた前
記各種回路は、そのほとんどの場合、図４に示すように
ダイオードＤのアノード側に抵抗Ｒが接続されている
か、図５に示すようにダイオードＤのカソード側に抵抗
Ｒが接続されている。したがって、個別部品としてダイ
オードを用いる場合には、ほとんどの場合、個別部品と
しての抵抗器も必要となる。このようにダイオードを用
いた回路を個別部品で構成する場合、プリント基板上の
部品実装面積が大きくなり、電子機器の小型軽量化を妨
げ、またプリント基板に対する実装工程も多くなり、こ
の種の回路を数多く必要とするビデオテープレコーダ等
の電子機器では部品コストとともに製造コストも嵩む。
このようにダイオードを用いた回路を個別部品で構成す
る場合、プリント基板上の部品実装面積が大きくなり、
電子機器の小型軽量化を妨げ、またプリント基板に対す
る実装工程も多くなり、この種の回路を数多く必要とす
るビデオテープレコーダ等の電子機器では部品コストと
ともに製造コストも嵩む。In most of the various circuits using a diode, a resistor R is connected to the anode side of the diode D as shown in FIG. 4 or a diode as shown in FIG. A resistor R is connected to the cathode side of D. Therefore, when a diode is used as an individual component, in most cases, a resistor as an individual component is also required. When a circuit using diodes is configured with individual components in this way, the component mounting area on the printed circuit board becomes large, hindering the miniaturization and weight reduction of electronic devices, and the mounting process on the printed circuit board also increases. In electronic devices such as video tape recorders that require a large number of components, the manufacturing cost increases as well as the component cost.
When a circuit using diodes is configured with individual components in this way, the component mounting area on the printed circuit board increases,
This hinders the downsizing and weight reduction of electronic equipment, and the number of mounting steps on a printed circuit board increases, and in electronic equipment such as a video tape recorder that requires many circuits of this type, the manufacturing cost as well as the component cost increases.
【０００４】この発明の目的は、ダイオードを構成する
半導体基板上に抵抗を形成し、その抵抗の一端をダイオ
ードの一方と接続して素子の複合化を図り、個別部品ま
たは集積回路では得ることのできない利点を持つ個別ダ
イオード装置の製造方法を提供することにある。An object of the present invention is to form a resistor on a semiconductor substrate which constitutes a diode, and connect one end of the resistor to one of the diodes to combine the elements to obtain an individual component or an integrated circuit. It is to provide a manufacturing method of an individual diode device having an advantage that cannot be obtained.
【０００５】[0005]
【課題を解決するための手段】この発明の個別トランジ
スタの製造方法は、第１導電型の半導体基板の表面に同
じ導電型のエピタキシャル層を形成し、前記エピタキシ
ャル層の表面に酸化膜を形成後、前記酸化膜に窓を開け
て前記エピタキシャル層に第２導電型の拡散領域を形成
し、前記エピタキシャル層の前記拡散領域以外の領域の
前記酸化膜上に薄膜抵抗を形成し、少なくとも前記拡散
層の表面から前記薄膜抵抗の一方端にかけて及び前記薄
膜抵抗の他方端並びに前記基板の裏面にそれぞれ金属膜
を形成後、前記基板を分割することを特徴とする。According to the method of manufacturing an individual transistor of the present invention, an epitaxial layer of the same conductivity type is formed on the surface of a semiconductor substrate of the first conductivity type, and an oxide film is formed on the surface of the epitaxial layer. A window is opened in the oxide film to form a second conductivity type diffusion region in the epitaxial layer, and a thin film resistor is formed on the oxide film in a region other than the diffusion region of the epitaxial layer, and at least the diffusion layer. The substrate is divided after forming a metal film from the front surface to the one end of the thin film resistor and on the other end of the thin film resistor and the back surface of the substrate, respectively.
【０００６】[0006]
【作用】半導体基板上に形成されたエピタキシャル層に
第２導電型の拡散領域を形成し、エピタキシャル層の拡
散領域以外の領域の酸化膜上に薄膜抵抗を形成し、少な
くとも拡散層の表面から薄膜抵抗の一方端にかけて及び
薄膜抵抗の他方端並びに基板の裏面にそれぞれ金属膜を
形成後、基板を分割することにより、薄膜抵抗が接続し
て設けられた個別ダイオード装置を簡易かつ容易に製造
できる。The second conductivity type diffusion region is formed in the epitaxial layer formed on the semiconductor substrate, and the thin film resistor is formed on the oxide film in the region other than the diffusion region of the epitaxial layer. By forming a metal film over one end of the resistor and on the other end of the thin film resistor and on the back surface of the substrate, and then dividing the substrate, an individual diode device provided with the thin film resistor connected thereto can be easily and easily manufactured.
【０００７】この発明により得られる個別ダイオード装
置は、ダイオードと抵抗を接続した回路がユニットとし
て一つのパッケージに組み込まれるため、その占有面積
が小さくなり、装置全体の小型軽量化に寄与し、しか
も、個別トランジスタ装置と同様に、３端子構造の電子
部品として用いることができるため、プリント基板に実
装する際、組立コストの低減を図ることができる。ま
た、抵抗体としてポリシリコン成長膜による薄膜抵抗を
用いるため、必要な抵抗値を広い範囲に亘って正確に設
定することができ、極めて汎用性の高い電子部品として
様々な目的に用いることができる。In the individual diode device obtained by the present invention, the circuit in which the diode and the resistor are connected is incorporated into one package as a unit, so that the occupying area becomes small, which contributes to the reduction in size and weight of the entire device, and moreover, Since it can be used as an electronic component having a three-terminal structure like the individual transistor device, it is possible to reduce the assembly cost when it is mounted on a printed circuit board. Further, since the thin film resistor formed by the polysilicon growth film is used as the resistor, the necessary resistance value can be accurately set over a wide range and can be used for various purposes as an extremely versatile electronic component. .
【０００８】[0008]
【実施例】図１はこの発明の製造方法により得られた個
別ダイオード装置のペレット部の断面図である。図１に
おいて１０はＮ+ の導電型の半導体基板、１１はＮの導
電型の層であり、これらは第１導電型の領域として作用
する。１２は第２導電型の領域であるＰ層、１３は１１
の表面部を覆うＳｉＯ2 等で形成された酸化膜、１５は
ポリシリコンの薄膜抵抗である。１４，１４’はそれぞ
れアルミニウムや金等による電極であり基板の裏面にも
図示は省略するが同様の電極が全面的に設けられてい
る。電極１４は薄膜抵抗の一方端に導通する第１の電極
として作用し、１４’は薄膜抵抗の他方端とＰ層１２と
に導通する第２の電極として作用する。図１においてＴ
１，Ｔ２，Ｔ３は図３に示した各端子の記号と一致して
いる、即ちこれらは外部の電気素子に接続される端子で
あり、Ｔ１は電極１４に接続された抵抗の一方の端子、
Ｔ２は電極１４’に接続された抵抗の他方の端子および
ダイオードのアノード端子、Ｔ３は裏面電極を構成する
ダイオードのカソード端子である。1 is a sectional view of a pellet portion of an individual diode device obtained by the manufacturing method of the present invention. In FIG. 1, 10 is a semiconductor substrate of N + conductivity type, 11 is a layer of N conductivity type, and these serve as regions of the first conductivity type. 12 is a P layer which is a second conductivity type region, and 13 is 11
Oxide film formed of SiO 2 or the like which covers the surface portion of the 15 is a thin film resistance of polysilicon. Reference numerals 14 and 14 'are electrodes made of aluminum, gold, or the like, and similar electrodes are provided on the entire back surface of the substrate, though not shown. The electrode 14 acts as a first electrode that conducts to one end of the thin film resistor, and 14 'acts as a second electrode that conducts to the other end of the thin film resistor and the P layer 12. In FIG. 1, T
1, T2 and T3 match the symbols of the terminals shown in FIG. 3, that is, these are terminals connected to an external electric element, and T1 is one terminal of a resistor connected to the electrode 14,
T2 is the other terminal of the resistor connected to the electrode 14 'and the anode terminal of the diode, and T3 is the cathode terminal of the diode forming the back electrode.
【０００９】図１に示した個別のペレットは、その使用
に際しては、従来の３端子型トランジスタのパッケージ
ングと同様に、先ず、ペレットを端子Ｔ３に連続するリ
ードフレームにダイボンディングし、電極１４，１４’
をリードボンディング等により端子Ｔ１，Ｔ２にそれぞ
れ電気的に接続することにより外部の電気素子と協働し
て任意の電気回路を構成することができる。When the individual pellets shown in FIG. 1 are used, the pellets are first die-bonded to a lead frame continuous to the terminal T3 in the same way as the packaging of a conventional three-terminal type transistor, and the electrodes 14, 14 '
Is electrically connected to the terminals T1 and T2 by lead bonding or the like, whereby an arbitrary electric circuit can be configured in cooperation with an external electric element.
【００１０】次に、本発明の製造方法を図２に従い説明
する。Next, the manufacturing method of the present invention will be described with reference to FIG.
【００１１】まず、図２（ａ）に示すように、第１導電
型であるＮ+ の平坦な半導体基板（ウエハー）１０にこ
れと同一の導電型のＮ層１１をエピタキシャル成長させ
る。このようにドーピング濃度を設定することにより、
ダイオードの順方向電圧降下の値を小さくすることがで
きる。次に、図２（ｂ）に示すように、Ｎ層１１の表面
に熱酸化法によりシリコン酸化膜１３を形成し、この酸
化膜１３の所定位置つまりダイオードのアノードを形成
すべき位置にエッチングにより窓を開けた後、この窓を
介して第２導電型から成るＰ層１２を拡散により形成す
る。その後、図２（ｃ）に示すように、酸化膜の表面に
ポリシリコンの薄膜をＣＶＤ法により成膜し、ポリシリ
コンの膜をパターンニングすることにより薄膜抵抗１５
を得る。更に、図２（ｄ）に示すように、表面にアルミ
ニウムや金等の金属膜を蒸着により形成し、薄膜抵抗の
一方端と、薄膜抵抗の他方端およびＰ層１２の上部に電
極１４，１４’をパターンニングすると共に基板の裏面
にも同様の材料の電極を形成した後、ウエハーをスクラ
イビングしてペレットとして分離、即ち分割、すること
により本発明の個別ダイオード装置が得られる。First, as shown in FIG. 2A, an N layer 11 of the same conductivity type as that of the first conductivity type is epitaxially grown on a flat semiconductor substrate (wafer) 10 of N + . By setting the doping concentration in this way,
The value of the forward voltage drop of the diode can be reduced. Next, as shown in FIG. 2B, a silicon oxide film 13 is formed on the surface of the N layer 11 by a thermal oxidation method, and a predetermined position of this oxide film 13, that is, a position where an anode of the diode is to be formed is etched. After the window is opened, the P layer 12 of the second conductivity type is formed by diffusion through the window. After that, as shown in FIG. 2C, a thin film of polysilicon is formed on the surface of the oxide film by the CVD method, and the thin film resistor 15 is patterned by patterning the film of polysilicon.
Get. Further, as shown in FIG. 2D, a metal film such as aluminum or gold is formed on the surface by vapor deposition, and electrodes 14, 14 are formed on one end of the thin film resistor and the other end of the thin film resistor and on the P layer 12. 'Is patterned and an electrode of the same material is formed on the back surface of the substrate, and then the wafer is scribed to be separated into pellets, that is, divided to obtain the individual diode device of the present invention.
【００１２】上記実施例はダイオードのアノード側に抵
抗を接続したものであったが、逆に、第１及び第２の導
電ダイオードのカソード側に抵抗を接続することもでき
る。図３はそのような方法による半導体装置の断面図で
ある。In the above embodiment, the resistor is connected to the anode side of the diode, but conversely, the resistor can be connected to the cathode side of the first and second conductive diodes. FIG. 3 is a sectional view of a semiconductor device manufactured by such a method.
【００１３】図３において２０は第１導電型のＰ+ の半
導体基板、２１はＰ層、２２は第２導電型のＮから成る
層である。つまり端子Ｔ２がカソード、端子Ｔ３がアノ
ードとなる。このように形成することにより、図５に示
したような回路ユニットが構成される。In FIG. 3, 20 is a P + semiconductor substrate of the first conductivity type, 21 is a P layer, and 22 is a layer made of N of the second conductivity type. That is, the terminal T2 serves as a cathode and the terminal T3 serves as an anode. By forming in this way, the circuit unit as shown in FIG. 5 is configured.
【００１４】以上に示した実施例によれば、従来の個別
ダイオード装置と同様のサイズに薄膜抵抗を形成するこ
とができ、ウエハーあたりの取り数を下げることなく製
造できる。According to the embodiment described above, the thin film resistor can be formed in the same size as that of the conventional individual diode device, and the thin film resistor can be manufactured without reducing the number of wafers taken per wafer.
【００１５】[0015]
【発明の効果】この発明によれば、ダイオードに抵抗が
接続された個別ダイオード装置を簡易かつ容易に製造す
ることができる。この発明により製造された個別ダイオ
ード装置は、ダイオードと抵抗を接続する回路部分に適
用することができ、従来の個別ダイオードを用いていた
箇所にこのような装置を用いることにより、個別部品と
しての抵抗器が不要となる。また、３端子構造を有する
個別トランジスタ装置と同様のパッケージに収納するこ
とができ、個別トランジスタ装置と同等に取り扱うこと
ができる。そのため、電子回路としての汎用性だけでな
く、基板に対する実装方法も汎用化され、電子機器の小
型軽量化に寄与する。更に、この発明により製造された
装置によれば、抵抗回路として、酸化膜の表面にポリシ
リコン成長膜による薄膜抵抗を形成したため、例えば拡
散抵抗によるものに比較して、抵抗回路の占有面積が小
さく全体に大型化しない、組成，膜厚の制御が容易であ
り抵抗値を広範囲に亘って正確に設定することができ
る、隣接する他の層間の寄生容量（浮遊容量）が小さく
高周波特性に優れる、許容電流値および耐圧上の問題が
生じない、などの効果もある。According to the present invention, an individual diode device in which a resistor is connected to a diode can be simply and easily manufactured. The individual diode device manufactured according to the present invention can be applied to a circuit portion that connects a diode and a resistor, and by using such a device in a place where a conventional individual diode is used, a resistance as an individual component can be obtained. No need for vessels. Further, it can be housed in the same package as the individual transistor device having a three-terminal structure, and can be handled in the same manner as the individual transistor device. Therefore, not only the versatility as an electronic circuit, but also the mounting method for a substrate is generalized, which contributes to reduction in size and weight of electronic equipment. Further, according to the device manufactured by the present invention, as the resistance circuit, the thin film resistance formed by the polysilicon growth film is formed on the surface of the oxide film, so that the occupied area of the resistance circuit is smaller than that of the resistance circuit, for example. The overall size is not increased, the composition and film thickness can be easily controlled, the resistance value can be accurately set over a wide range, the parasitic capacitance (stray capacitance) between other adjacent layers is small, and the high frequency characteristics are excellent. There are also effects such as no problems with the allowable current value and the breakdown voltage.
【図１】この発明により製造された個別ダイオード装置
の断面図である。FIG. 1 is a cross-sectional view of an individual diode device manufactured according to the present invention.
【図２】この発明の製造方法の工程を示す断面図であ
る。FIG. 2 is a cross-sectional view showing the steps of the manufacturing method of the present invention.
【図３】この発明により製造された他のタイプの個別ダ
イオード装置の断面図である。FIG. 3 is a cross-sectional view of another type of discrete diode device made in accordance with the present invention.
【図４】抵抗とダイオードによる基本回路の回路図であ
る。FIG. 4 is a circuit diagram of a basic circuit including a resistor and a diode.
【図５】抵抗とダイオードによる基本回路の回路図であ
る。FIG. 5 is a circuit diagram of a basic circuit including a resistor and a diode.
１０，２０−半導体基板（第１導電領域） １２，２２−第２導電領域 １３−酸化膜 １４−第１の電極 １４’−第２の電極 １５−薄膜抵抗 10, 20-Semiconductor substrate (first conductive region) 12, 22-Second conductive region 13-Oxide film 14-First electrode 14'-Second electrode 15-Thin film resistor
Claims (1)
型のエピタキシャル層を形成し、前記エピタキシャル層
の表面に酸化膜を形成後、前記酸化膜に窓を開けて前記
エピタキシャル層に第２導電型の拡散領域を形成し、前
記エピタキシャル層の前記拡散領域以外の領域の前記酸
化膜上に薄膜抵抗を形成し、少なくとも前記拡散層の表
面から前記薄膜抵抗の一方端にかけて及び前記薄膜抵抗
の他方端並びに前記基板の裏面にそれぞれ金属膜を形成
後、前記基板を分割することを特徴とする個別ダイオー
ド装置の製造方法。1. An epitaxial layer of the same conductivity type is formed on the surface of a semiconductor substrate of the first conductivity type, an oxide film is formed on the surface of the epitaxial layer, and a window is opened in the oxide film to form a second layer on the epitaxial layer. A two-conductivity type diffusion region is formed, a thin film resistor is formed on the oxide film in a region other than the diffusion region of the epitaxial layer, and at least from the surface of the diffusion layer to one end of the thin film resistor and the thin film resistor. A method for manufacturing an individual diode device, wherein the substrate is divided after forming metal films on the other end and the back surface of the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12685895A JPH0818071A (en) | 1995-05-25 | 1995-05-25 | Manufacture of individual diode device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12685895A JPH0818071A (en) | 1995-05-25 | 1995-05-25 | Manufacture of individual diode device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21091791A Division JPH04355969A (en) | 1991-08-22 | 1991-08-22 | Separate diode device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0818071A true JPH0818071A (en) | 1996-01-19 |
Family
ID=14945592
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12685895A Pending JPH0818071A (en) | 1995-05-25 | 1995-05-25 | Manufacture of individual diode device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0818071A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109950299A (en) * | 2019-04-16 | 2019-06-28 | 成都方舟微电子有限公司 | A kind of power integrated diode chip structure and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4932474A (en) * | 1972-07-24 | 1974-03-25 | ||
| JPS523389A (en) * | 1975-06-27 | 1977-01-11 | Toshiba Corp | Field effect semiconductor device |
| JPS58219759A (en) * | 1982-06-15 | 1983-12-21 | Oki Electric Ind Co Ltd | Manufacture of polycrystalline silicon resistor |
| JPS59189679A (en) * | 1983-04-13 | 1984-10-27 | Hitachi Ltd | Diode |
-
1995
- 1995-05-25 JP JP12685895A patent/JPH0818071A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4932474A (en) * | 1972-07-24 | 1974-03-25 | ||
| JPS523389A (en) * | 1975-06-27 | 1977-01-11 | Toshiba Corp | Field effect semiconductor device |
| JPS58219759A (en) * | 1982-06-15 | 1983-12-21 | Oki Electric Ind Co Ltd | Manufacture of polycrystalline silicon resistor |
| JPS59189679A (en) * | 1983-04-13 | 1984-10-27 | Hitachi Ltd | Diode |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109950299A (en) * | 2019-04-16 | 2019-06-28 | 成都方舟微电子有限公司 | A kind of power integrated diode chip structure and preparation method thereof |
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