JPS523389A - Field effect semiconductor device - Google Patents

Field effect semiconductor device

Info

Publication number
JPS523389A
JPS523389A JP50079346A JP7934675A JPS523389A JP S523389 A JPS523389 A JP S523389A JP 50079346 A JP50079346 A JP 50079346A JP 7934675 A JP7934675 A JP 7934675A JP S523389 A JPS523389 A JP S523389A
Authority
JP
Japan
Prior art keywords
semiconductor device
field effect
effect semiconductor
gate
polarities
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50079346A
Other languages
Japanese (ja)
Inventor
Kiyoshi Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP50079346A priority Critical patent/JPS523389A/en
Publication of JPS523389A publication Critical patent/JPS523389A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:diodes having a different polarity are provided in series with each other between a gate electrode and basic plate, catching center is positioned in a gate film, A NMOS element for protecting a gate even if over-load voltage having both polarities is applied.
JP50079346A 1975-06-27 1975-06-27 Field effect semiconductor device Pending JPS523389A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50079346A JPS523389A (en) 1975-06-27 1975-06-27 Field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50079346A JPS523389A (en) 1975-06-27 1975-06-27 Field effect semiconductor device

Publications (1)

Publication Number Publication Date
JPS523389A true JPS523389A (en) 1977-01-11

Family

ID=13687328

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50079346A Pending JPS523389A (en) 1975-06-27 1975-06-27 Field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS523389A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6230361A (en) * 1985-07-31 1987-02-09 Nec Corp Cmos input protecting circuit
JPS63151090A (en) * 1986-12-16 1988-06-23 Matsushita Electronics Corp Hall effect semiconductor device
JPS63300549A (en) * 1987-05-29 1988-12-07 Nec Corp Diode
WO1990014690A1 (en) * 1989-05-17 1990-11-29 David Sarnoff Research Center, Inc. Voltage stress alterable esd protection structure
US5010380A (en) * 1989-05-17 1991-04-23 David Sarnoff Research Center, Inc. Voltage stress alterable ESD protection structure
JPH03129779A (en) * 1989-07-12 1991-06-03 Fuji Electric Co Ltd Semiconductor device having high breakdown strength
US5371392A (en) * 1992-06-29 1994-12-06 Sony Corporation Semiconductor apparatus and horizontal register for solid-state image pickup apparatus with protection circuit
JPH07326772A (en) * 1995-05-25 1995-12-12 Rohm Co Ltd Discrete diode device
JPH088446A (en) * 1995-05-25 1996-01-12 Rohm Co Ltd Discrete diode
JPH0818071A (en) * 1995-05-25 1996-01-19 Rohm Co Ltd Manufacture of individual diode device
JPH0832092A (en) * 1995-05-25 1996-02-02 Rohm Co Ltd Discrete diode
US5777367A (en) * 1993-09-30 1998-07-07 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Integrated structure active clamp for the protection of power devices against overvoltages

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4932586A (en) * 1972-07-22 1974-03-25

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4932586A (en) * 1972-07-22 1974-03-25

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6230361A (en) * 1985-07-31 1987-02-09 Nec Corp Cmos input protecting circuit
JPS63151090A (en) * 1986-12-16 1988-06-23 Matsushita Electronics Corp Hall effect semiconductor device
JPS63300549A (en) * 1987-05-29 1988-12-07 Nec Corp Diode
WO1990014690A1 (en) * 1989-05-17 1990-11-29 David Sarnoff Research Center, Inc. Voltage stress alterable esd protection structure
US5010380A (en) * 1989-05-17 1991-04-23 David Sarnoff Research Center, Inc. Voltage stress alterable ESD protection structure
JPH03129779A (en) * 1989-07-12 1991-06-03 Fuji Electric Co Ltd Semiconductor device having high breakdown strength
US5371392A (en) * 1992-06-29 1994-12-06 Sony Corporation Semiconductor apparatus and horizontal register for solid-state image pickup apparatus with protection circuit
US5641981A (en) * 1992-06-29 1997-06-24 Sony Corporation Semiconductor apparatus and horizontal register for solid-state image pickup apparatus with protection circuit for bypassing an excess signal
US5811845A (en) * 1992-06-29 1998-09-22 Sony Corporation Semiconductor apparatus and horizontal register for solid-state image pickup apparatus with protection circuit for bypassing an excess signal
US5777367A (en) * 1993-09-30 1998-07-07 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Integrated structure active clamp for the protection of power devices against overvoltages
JPH07326772A (en) * 1995-05-25 1995-12-12 Rohm Co Ltd Discrete diode device
JPH088446A (en) * 1995-05-25 1996-01-12 Rohm Co Ltd Discrete diode
JPH0818071A (en) * 1995-05-25 1996-01-19 Rohm Co Ltd Manufacture of individual diode device
JPH0832092A (en) * 1995-05-25 1996-02-02 Rohm Co Ltd Discrete diode

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