JPH0573052B2 - - Google Patents

Info

Publication number: JPH0573052B2
Authority: JP; Japan
Prior art keywords: wiring; etching; lsi; reaction vessel; metal thin
Prior art date: 1985-03-29
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

JP6350285A

Other languages

English (en)

Japanese (ja)

Other versions

JPS61224342A (ja

Inventor

Kunyuki Fukuzawa

Mikio Ppongo

Takeoki Myauchi

Junzo Azuma

Katsuro Mizukoshi

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Hitachi Ltd

Original Assignee

Hitachi Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1985-03-29

Filing date

1985-03-29

Publication date

1993-10-13

1985-03-29 Application filed by Hitachi Ltd filed Critical Hitachi Ltd

1985-03-29 Priority to JP60063502A priority Critical patent/JPS61224342A/ja

1986-10-06 Publication of JPS61224342A publication Critical patent/JPS61224342A/ja

1993-10-13 Publication of JPH0573052B2 publication Critical patent/JPH0573052B2/ja

Status Granted legal-status Critical Current

Links

238000005530 etching Methods 0.000 claims description 26
239000010408 film Substances 0.000 claims description 23
238000000034 method Methods 0.000 claims description 22
238000006243 chemical reaction Methods 0.000 claims description 21
229910052751 metal Inorganic materials 0.000 claims description 20
239000002184 metal Substances 0.000 claims description 20
239000010409 thin film Substances 0.000 claims description 11
238000002161 passivation Methods 0.000 claims description 10
238000000151 deposition Methods 0.000 claims description 9
238000001182 laser chemical vapour deposition Methods 0.000 claims 1
238000012937 correction Methods 0.000 description 18
239000007789 gas Substances 0.000 description 18
229910052782 aluminium Inorganic materials 0.000 description 14
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 12
239000000126 substance Substances 0.000 description 8
125000002524 organometallic group Chemical group 0.000 description 7
239000011261 inert gas Substances 0.000 description 6
238000010884 ion-beam technique Methods 0.000 description 4
150000002500 ions Chemical class 0.000 description 4
238000000427 thin-film deposition Methods 0.000 description 4
238000001020 plasma etching Methods 0.000 description 3
238000010521 absorption reaction Methods 0.000 description 2
230000015572 biosynthetic process Effects 0.000 description 2
229910052793 cadmium Inorganic materials 0.000 description 2
238000010586 diagram Methods 0.000 description 2
230000000694 effects Effects 0.000 description 2
239000000463 material Substances 0.000 description 2
239000000203 mixture Substances 0.000 description 2
230000003287 optical effect Effects 0.000 description 2
150000002902 organometallic compounds Chemical class 0.000 description 2
AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
238000011109 contamination Methods 0.000 description 1
230000008021 deposition Effects 0.000 description 1
-1 iC 4 H 9 ) 3 Chemical class 0.000 description 1
238000010329 laser etching Methods 0.000 description 1
238000012986 modification Methods 0.000 description 1
230000004048 modification Effects 0.000 description 1
238000012544 monitoring process Methods 0.000 description 1
230000003647 oxidation Effects 0.000 description 1
238000007254 oxidation reaction Methods 0.000 description 1
238000002294 plasma sputter deposition Methods 0.000 description 1
238000012545 processing Methods 0.000 description 1
239000004065 semiconductor Substances 0.000 description 1
238000000992 sputter etching Methods 0.000 description 1

Landscapes

Preparing Plates And Mask In Photomechanical Process (AREA)
Drying Of Semiconductors (AREA)
Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Design And Manufacture Of Integrated Circuits (AREA)

JP60063502A 1985-03-29 1985-03-29 Ｌｓｉ配線修正方法及びその装置 Granted JPS61224342A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP60063502A JPS61224342A (ja)	1985-03-29	1985-03-29	Ｌｓｉ配線修正方法及びその装置

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP60063502A JPS61224342A (ja)	1985-03-29	1985-03-29	Ｌｓｉ配線修正方法及びその装置

Publications (2)

Publication Number	Publication Date
JPS61224342A JPS61224342A (ja)	1986-10-06
JPH0573052B2 true JPH0573052B2 (de)	1993-10-13

Family

ID=13231069

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP60063502A Granted JPS61224342A (ja)	1985-03-29	1985-03-29	Ｌｓｉ配線修正方法及びその装置

Country Status (1)

Country	Link
JP (1)	JPS61224342A (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH084089B2 (ja) *	1986-12-22	1996-01-17	株式会社日立製作所	Ｉｃ素子並びにｉｃ素子における配線接続方法
JPH081928B2 (ja) *	1986-12-17	1996-01-10	株式会社日立製作所	多層配線の接続配線構造の形成方法
JP2594941B2 (ja) *	1987-05-11	1997-03-26	株式会社日立製作所	Ｉｃ配線の接続方法及びその装置
JP2527183B2 (ja) *	1987-05-20	1996-08-21	株式会社日立製作所	処理方法及び半導体装置の配線修正方法
JPH03253058A (ja) *	1990-03-01	1991-11-12	Hitachi Ltd	半導体集積回路の補修方式および半導体集積回路補修システム

1985
- 1985-03-29 JP JP60063502A patent/JPS61224342A/ja active Granted

Also Published As

Publication number	Publication date
JPS61224342A (ja)	1986-10-06

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