JPH0465901B2 - - Google Patents
Info
- Publication number
- JPH0465901B2 JPH0465901B2 JP61168053A JP16805386A JPH0465901B2 JP H0465901 B2 JPH0465901 B2 JP H0465901B2 JP 61168053 A JP61168053 A JP 61168053A JP 16805386 A JP16805386 A JP 16805386A JP H0465901 B2 JPH0465901 B2 JP H0465901B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon steel
- zone
- base material
- material plate
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910000976 Electrical steel Inorganic materials 0.000 claims description 47
- 239000000463 material Substances 0.000 claims description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 23
- 229910052710 silicon Inorganic materials 0.000 claims description 23
- 239000010703 silicon Substances 0.000 claims description 23
- 238000004519 manufacturing process Methods 0.000 claims description 18
- 238000002791 soaking Methods 0.000 claims description 16
- 230000001590 oxidative effect Effects 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 12
- 238000007740 vapor deposition Methods 0.000 claims description 12
- 238000001816 cooling Methods 0.000 claims description 11
- 239000013078 crystal Substances 0.000 claims description 11
- 238000005019 vapor deposition process Methods 0.000 claims description 2
- 238000004804 winding Methods 0.000 claims description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims 2
- 229910002092 carbon dioxide Inorganic materials 0.000 claims 1
- 239000001569 carbon dioxide Substances 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 description 23
- 238000000034 method Methods 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910000831 Steel Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 239000010959 steel Substances 0.000 description 3
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910003902 SiCl 4 Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002386 leaching Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000005049 silicon tetrachloride Substances 0.000 description 2
- 206010040844 Skin exfoliation Diseases 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
- Manufacturing Of Steel Electrode Plates (AREA)
- Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は、鋼板、特に、電磁材料用の電気鉄
板として用いられる高珪素鋼板の製造装置に関す
るものである。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an apparatus for manufacturing steel plates, particularly high-silicon steel plates used as electrical iron plates for electromagnetic materials.
変圧器等の鉄心電気鉄板には、高珪素鋼板が使
用されている。高珪素鋼板においては、珪素の含
有量が多いほど鉄損が低減し、そして、珪素の含
有量が約6.5wt％になると、磁気歪がほぼ０とな
ると共に最大透磁率がピークになる。このように
高珪素鋼板は、優れた磁気特性を有する。
High-silicon steel plates are used for the core electrical steel plates of transformers and the like. In high-silicon steel sheets, the higher the silicon content, the lower the core loss is, and when the silicon content is about 6.5 wt%, the magnetostriction becomes almost 0 and the maximum magnetic permeability peaks. In this way, high-silicon steel sheets have excellent magnetic properties.
従来、上記高珪素鋼板の製造方法として、次の
方法、所謂、滲珪処理法が知られている。即ち、
普通鋼板または4wt％以下の珪素を含有する低珪
素鋼板（以下、母材板と云う）に対し、４塩化珪
素ガス（SiCl4）を含有する無酸化ガス中におい
て、高温度下でCVD法（化学気相蒸着法）ある
いはPVD（物理気相蒸着法）により蒸着処理を施
し、これにより、母材板の表面に珪素を蒸着し、
次いで、４塩化珪素ガスを含有しない無酸化ガス
中において、蒸着した珪素を母材板中に拡散さ
せ、かくして、母材板中に珪素を浸透させる。 Conventionally, as a method for manufacturing the above-mentioned high-silicon steel sheet, the following method, the so-called silicon leaching treatment method, has been known. That is,
A normal steel sheet or a low-silicon steel sheet containing 4wt% or less silicon (hereinafter referred to as the base material sheet) is subjected to CVD (CVD) method at high temperature in a non-oxidizing gas containing silicon tetrachloride gas (SiCl 4 ). A vapor deposition process is performed using chemical vapor deposition (chemical vapor deposition) or PVD (physical vapor deposition), thereby depositing silicon on the surface of the base material plate.
Next, the deposited silicon is diffused into the base material plate in a non-oxidizing gas that does not contain silicon tetrachloride gas, thus causing the silicon to permeate into the base material plate.
上述した滲珪処理法によつて製造される高珪素
鋼板においては、母材板の表面に蒸着された珪素
を拡散させる過程で結晶粒が成長して粒径が大き
くなる。この結果、上述したように磁気特性が良
好になる反面、粒界割れが生じやすくなる。 In the high-silicon steel sheet manufactured by the above-mentioned silicon leaching treatment method, crystal grains grow and the grain size increases during the process of diffusing silicon deposited on the surface of the base material sheet. As a result, although the magnetic properties are improved as described above, grain boundary cracks are more likely to occur.
このようなことから、上述した滲珪処理法によ
つて製造された高珪素鋼板に加える加工の程度が
小さい場合には、高珪素鋼板を若干（200〜300
℃）加熱すれば加工できるので問題は生じない
が、高珪素鋼板に大きな加工を加える場合には、
上述した理由によつてこれが行なえない。 For this reason, if the degree of processing applied to the high-silicon steel sheet manufactured by the above-mentioned silica treatment method is small, the high-silicon steel sheet may be slightly (200 to 300
°C) It can be processed by heating, so there is no problem, but when major processing is applied to a high silicon steel plate,
This cannot be done for the reasons mentioned above.
そこで、滲珪処理法によつて高珪素鋼板を連続
的に製造する場合に、製造後に施す加工の程度に
応じて結晶粒の粒径を変えることができる、高珪
素鋼板の製造装置に開発が望まれているが、かか
る装置はまだ提案されていない。 Therefore, when manufacturing high-silicon steel sheets continuously using the silica treatment method, a manufacturing device for high-silicon steel sheets has been developed that can change the grain size of the crystal grains depending on the degree of processing performed after manufacturing. Although desired, such a device has not yet been proposed.
従つて、この発明の目的は、滲珪処理法によつ
て高珪素鋼板を連続的に製造する場合に、製造後
に施す加工の程度に応じて結晶粒の粒径を変える
ことができる、高珪素鋼板の製造装置を提供する
ことにある。
Therefore, an object of the present invention is to produce a high-silicon steel plate that can change the grain size of the crystal grains depending on the degree of processing performed after production when high-silicon steel sheets are continuously produced by the silicon bleed treatment method. The purpose of the present invention is to provide steel plate manufacturing equipment.
この発明は、コイル状に巻かれた低珪素鋼板か
らなる母材板を繰り出すためのアンコイラーと、
前記アンコイラーに続いて設けられた、前記母材
板を加熱するための加熱帯と、前記加熱帯に続い
て設けられた、前記加熱帯内で加熱された前記母
材板に蒸着処理を施すための蒸着帯と、前記蒸着
帯に続いて設けられた、前記蒸着帯内で前記母材
板の表面に蒸着された珪素を前記母材板中に拡散
させて、高珪素鋼板を得るための均熱帯と、前記
均熱帯内を、製造する高珪素鋼板の用途目的に応
じて結晶粒の成長を制御するために、酸化性雰囲
気あるいは還元性雰囲気に切り替え、且つ、必要
に応じて、その酸化あるいは還元強度を制御し得
るガス供給手段と、前記均熱帯に続いて設けられ
た、前記高珪素鋼板を冷却するための冷却帯と、
前記冷却帯に続いて設けられた、前記冷却帯内で
冷却された前記高珪素鋼板を巻き取るためのコイ
ラーとからなることに特徴を有するものである。
This invention includes an uncoiler for unwinding a base material plate made of a low-silicon steel plate wound into a coil shape;
A heating zone provided following the uncoiler for heating the base material plate; and a heating zone provided following the heating zone for performing a vapor deposition treatment on the base material plate heated within the heating zone. a vapor deposition zone, which is provided following the vapor deposition zone, for diffusing silicon deposited on the surface of the base material plate in the vapor deposition zone into the base material plate to obtain a high-silicon steel plate. The tropical zone and the soaking zone are switched to an oxidizing atmosphere or a reducing atmosphere in order to control the growth of crystal grains depending on the intended use of the high-silicon steel sheet to be manufactured, and the oxidizing or reducing atmosphere is changed as necessary. a gas supply means capable of controlling the reduction intensity; a cooling zone provided subsequent to the soaking zone for cooling the high silicon steel plate;
The present invention is characterized in that it comprises a coiler provided following the cooling zone for winding up the high silicon steel plate cooled in the cooling zone.
〔発明の構成〕
次に、この発明の、高珪素鋼板の製造装置の一
実施態様を図面を参照しながら説明する。[Structure of the Invention] Next, an embodiment of a high-silicon steel sheet manufacturing apparatus according to the present invention will be described with reference to the drawings.
第１図は、この発明の、高珪素鋼板の製造装置
の一実施態様を示すブロツク図である。 FIG. 1 is a block diagram showing one embodiment of a high-silicon steel sheet manufacturing apparatus according to the present invention.
第１図において、アンコイラー１は、低珪素鋼
板からなるコイル状に巻かれた母材板２を繰り出
す。 In FIG. 1, an uncoiler 1 unwinds a base material plate 2 made of a low-silicon steel plate and wound into a coil shape.
加熱帯３は、後述する蒸着帯内で母材板２に、
例えば、CVD法により蒸着が行なえるように、
母材板２を1100〜1200℃に加熱する。蒸着帯４
は、母材板２の表面に向けて吹付けノズルからア
ルゴンガス等のキヤリヤガスと共にSiCl4ガスを
吹き付けて、無酸化ガス中で母材板の表面に珪素
を蒸着する。 The heating zone 3 is attached to the base material plate 2 within the vapor deposition zone, which will be described later.
For example, so that vapor deposition can be performed using the CVD method,
The base material plate 2 is heated to 1100 to 1200°C. Vapor deposition zone 4
In this method, SiCl 4 gas is sprayed together with a carrier gas such as argon gas from a spray nozzle toward the surface of the base material plate 2 to vapor-deposit silicon on the surface of the base material plate in a non-oxidizing gas.
均熱帯５は、蒸着帯４によつて表面に珪素が蒸
着された母材板２を1200〜1400℃に加熱して、母
材板２の表面に蒸着された珪素を母材板２中に拡
散させ4.0〜7.3wt％、例えば、6.5wt％の珪素を
母材板２中に浸透させ、かくして、高珪素鋼板８
を製造する。 In the soaking zone 5, the base material plate 2 on which silicon is vapor-deposited on the surface by the vapor deposition zone 4 is heated to 1200 to 1400°C, and the silicon vapor-deposited on the surface of the base material plate 2 is transferred into the base material plate 2. 4.0 to 7.3wt%, for example, 6.5wt% of silicon is diffused into the base material plate 2, thus forming the high silicon steel plate 8.
Manufacture.
ガス供給手段６は、Ar、He等の不活性ガスと
共にH2、CH4、CnHn、NH3等の還元性ガス、
または、空気、O2、H2O、CO2等の酸化性ガスを
均熱帯５に供給して、均熱帯５内を還元性または
酸化性雰囲気に維持する。 The gas supply means 6 supplies inert gases such as Ar and He, as well as reducing gases such as H 2 , CH 4 , CnHn, and NH 3 ,
Alternatively, an oxidizing gas such as air, O 2 , H 2 O, CO 2 or the like is supplied to the soaking zone 5 to maintain the inside of the soaking zone 5 in a reducing or oxidizing atmosphere.
冷却帯７は、均熱帯５によつて得られた高珪素
鋼板８を所定温度に冷却する。コイラー９は、冷
却帯７によつて冷却された高珪素鋼板８をコイル
状に巻き取る。 The cooling zone 7 cools the high silicon steel plate 8 obtained in the soaking zone 5 to a predetermined temperature. The coiler 9 winds up the high silicon steel plate 8 cooled by the cooling zone 7 into a coil shape.
上述した、この発明の、高珪素鋼板の製造装置
の一実施態様によつて、製造後に大きな加工を施
す高珪素鋼板を製造するには、ガス供給手段６か
ら不活性ガスと共に酸化性ガスを均熱帯５内に供
給する。 According to the above-described embodiment of the high-silicon steel sheet manufacturing apparatus of the present invention, in order to manufacture a high-silicon steel sheet that is subjected to extensive processing after manufacturing, an oxidizing gas is homogenized together with an inert gas from the gas supply means 6. Supply within the tropics 5.
これによつて、蒸着帯４内で母材板２の表面に
蒸着された珪素は、酸化性ガス雰囲気に維持され
た均熱帯５内で母材板２中に拡散して高珪素鋼板
８が連続的に製造されるが、酸化性ガス雰囲気下
で拡散が行なわれるので、高珪素鋼板８の結晶粒
は余り成長しない。この結果、高珪素鋼板８に大
きな加工を施すことができる。なお、加工を施し
た後の高珪素鋼板８には、磁気特性を高珪素によ
る作用と相俟つて向上させるために高温下で焼鈍
を施して、その結晶粒の粒径を大きくする。 As a result, the silicon deposited on the surface of the base material plate 2 in the vapor deposition zone 4 is diffused into the base material plate 2 in the soaking zone 5 maintained in an oxidizing gas atmosphere, and the high silicon steel plate 8 is formed. Although it is manufactured continuously, the crystal grains of the high silicon steel sheet 8 do not grow much because the diffusion is performed in an oxidizing gas atmosphere. As a result, large-scale processing can be performed on the high-silicon steel plate 8. The processed high-silicon steel plate 8 is annealed at a high temperature to increase the grain size of its crystal grains in order to improve its magnetic properties together with the effects of high silicon content.
一方、製造後にそれぼと大きな加工を施さない
高珪素鋼板を製造するには、ガス供給手段６から
不活性ガスと共に還元性ガスと均熱帯５に供給す
る。 On the other hand, in order to manufacture a high-silicon steel sheet that does not undergo any major processing after manufacturing, a reducing gas and an inert gas are supplied from the gas supply means 6 to the soaking zone 5.
これによつて、蒸着帯４内で母材板２の表面に
蒸着された珪素は、還元性ガス雰囲気に維持され
た均熱帯５内で母材板２中に拡散して高珪素鋼板
８が連続的に製造される。このように、母材板２
の表面に蒸着された珪素が還元性ガス雰囲気下で
母材板２中に拡散すると、得られた高珪素鋼板８
の結晶粒が成長して、その粒径が大きくなるの
で、高珪素による作用と相俟つて磁気特性の優れ
た高珪素鋼板８が連続的に製造される。 As a result, the silicon deposited on the surface of the base material plate 2 in the vapor deposition zone 4 is diffused into the base material plate 2 in the soaking zone 5 maintained in a reducing gas atmosphere, and the high silicon steel plate 8 is formed. Manufactured continuously. In this way, the base material plate 2
When the silicon deposited on the surface of is diffused into the base material plate 2 in a reducing gas atmosphere, the obtained high silicon steel plate 8
As the crystal grains grow and their grain size becomes larger, together with the effect of high silicon content, high silicon steel sheets 8 with excellent magnetic properties are continuously manufactured.
次に、均熱帯５内の雰囲気をアルゴン：98％、
酸素：２％の酸化性ガス雰囲気に維持し、拡散処
理温度を1200℃および1300℃にそれぞれ保持し、
得られた高珪素鋼板８の平均結晶粒径と拡散処理
温度との関係について調べ、そして、均熱帯５内
の雰囲気をアルゴン：75％、水素：25％の還元性
ガス雰囲気に維持し、拡散処理温度を1200℃およ
び1300℃にそれぞれ保持し、得られた高珪素鋼板
８の平均結晶粒径と拡散処理時間との関係につい
て調べた。これらの結果を第２図に示す。 Next, the atmosphere in soaking zone 5 was set to 98% argon.
Oxygen: Maintained in an oxidizing gas atmosphere of 2%, and the diffusion treatment temperature was maintained at 1200°C and 1300°C, respectively.
The relationship between the average grain size of the obtained high-silicon steel sheet 8 and the diffusion treatment temperature was investigated, and the atmosphere in the soaking zone 5 was maintained at a reducing gas atmosphere of 75% argon and 25% hydrogen, and the diffusion The treatment temperature was maintained at 1200° C. and 1300° C., respectively, and the relationship between the average grain size of the obtained high silicon steel plate 8 and the diffusion treatment time was investigated. These results are shown in FIG.
第２図から明らかなように、酸化性ガス雰囲気
下で拡散処理を施した場合には、拡散処理時間が
経過しても結晶粒径はほとんど変らず、一方、還
元性ガス雰囲気下で拡散処理を施した場合には、
拡散処理時間が経過するにつれて結晶粒径が大き
くなることがわかる。 As is clear from Figure 2, when diffusion treatment is performed in an oxidizing gas atmosphere, the crystal grain size hardly changes even after the diffusion treatment time elapses; If you apply
It can be seen that the crystal grain size increases as the diffusion treatment time elapses.
以上説明したように、この発明によれば、滲珪
処理法によつて、高珪素鋼板を連続的に製造する
場合に、製造後に施す加工の程度に応じて結晶粒
の粒径を変えることができるといつたきわめて有
用な効果がもたらされる。
As explained above, according to the present invention, when high-silicon steel sheets are continuously manufactured using the silicon exfoliation treatment method, the grain size of the crystal grains can be changed depending on the degree of processing performed after manufacturing. This can have very useful effects.
第１図は、この発明の、高珪素鋼板の製造装置
の一実施態様を示すブロツク図、第２図は、平均
結晶粒径と拡散処理時間との関係を示すグラフで
ある。
図面において、１……アンコイラー、２……母
材板、３……加熱帯、４……蒸着処理帯、５……
均熱帯、６……ガス供給手段、７……冷却帯、８
……高珪素鋼板、９……コイラー。
FIG. 1 is a block diagram showing one embodiment of the high-silicon steel plate manufacturing apparatus of the present invention, and FIG. 2 is a graph showing the relationship between average grain size and diffusion treatment time. In the drawings, 1... Uncoiler, 2... Base material plate, 3... Heating zone, 4... Vapor deposition treatment zone, 5...
Soaking zone, 6... Gas supply means, 7... Cooling zone, 8
...High silicon steel plate, 9...Coiler.
Claims (1)
板を繰り出すためのアンコイラーと、前記アンコ
イラーに続いて設けられた、前記母材板を加熱す
るための加熱帯と、前記加熱帯に続いて設けられ
た、前記加熱帯内で加熱された前記母材板に蒸着
処理を施すための蒸着帯と、前記蒸着帯に続いて
設けられた、前記蒸着帯内で前記母材板の表面に
蒸着された珪素を前記母材板中に拡散させて、高
珪素鋼板を得るための均熱帯と、前記均熱帯内
を、製造する高珪素鋼板の用途目的に応じて結晶
粒の成長を制御するために、酸化性雰囲気あるい
は還元性雰囲気に切り替え可能なガス供給手段
と、前記均熱帯に続いて設けられた、前記高珪素
鋼板を冷却するための冷却帯と、前記冷却帯に続
いて設けられた、前記冷却帯内で冷却された前記
高珪素鋼板を巻き取るためのコイラーとからなる
ことを特徴とする、高珪素鋼板の製造装置。 ２ 前記ガス供給手段は、酸化性雰囲気あるいは
還元性雰囲気に切り替え可能であり、且つ、その
酸化あるいは還元強度を制御し得ることを特徴と
する、特許請求の範囲１に記載された、高珪素鋼
板の製造装置。[Scope of Claims] 1. An uncoiler for unwinding a base material plate made of a low-silicon steel plate wound into a coil, a heating zone provided following the uncoiler for heating the base material plate, a vapor deposition zone provided following the heating zone for performing a vapor deposition process on the base material plate heated within the heating zone; A soaking zone for diffusing silicon deposited on the surface of the material plate into the base material plate to obtain a high-silicon steel plate, and a soaking zone for diffusing silicon deposited on the surface of the material plate into the base material plate, and a soaking zone for crystal grains depending on the intended use of the high-silicon steel plate to be manufactured. a gas supply means that can be switched to an oxidizing atmosphere or a reducing atmosphere in order to control the growth of the carbon dioxide; a cooling zone provided following the soaking zone to cool the high-silicon steel sheet; and the cooling zone. and a coiler provided subsequent to the cooling zone for winding up the high silicon steel sheet cooled in the cooling zone. 2. The high silicon steel sheet according to claim 1, wherein the gas supply means is capable of switching to an oxidizing atmosphere or a reducing atmosphere, and can control the oxidation or reduction strength thereof. manufacturing equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16805386A JPS6326312A (en) | 1986-07-18 | 1986-07-18 | Apparatus for producing steel sheet |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16805386A JPS6326312A (en) | 1986-07-18 | 1986-07-18 | Apparatus for producing steel sheet |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6326312A JPS6326312A (en) | 1988-02-03 |
| JPH0465901B2 true JPH0465901B2 (en) | 1992-10-21 |
Family
ID=15860956
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16805386A Granted JPS6326312A (en) | 1986-07-18 | 1986-07-18 | Apparatus for producing steel sheet |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6326312A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5217245A (en) * | 1991-09-03 | 1993-06-08 | Monroe Auto Equipment Company | Switchable roll-stabilizer bar |
| KR101404136B1 (en) * | 2012-03-19 | 2014-06-10 | 한국기계연구원 | Method of forming electrical steel sheet having high silicon concentration and system for fabricating electrical steel sheet |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4893522A (en) * | 1972-03-13 | 1973-12-04 |
-
1986
- 1986-07-18 JP JP16805386A patent/JPS6326312A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4893522A (en) * | 1972-03-13 | 1973-12-04 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6326312A (en) | 1988-02-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |