JPS6326324A - Production of treated steel sheet - Google Patents
Production of treated steel sheetInfo
- Publication number
- JPS6326324A JPS6326324A JP16805586A JP16805586A JPS6326324A JP S6326324 A JPS6326324 A JP S6326324A JP 16805586 A JP16805586 A JP 16805586A JP 16805586 A JP16805586 A JP 16805586A JP S6326324 A JPS6326324 A JP S6326324A
- Authority
- JP
- Japan
- Prior art keywords
- steel sheet
- silicon
- pressure
- atmosphere
- furnace
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910000831 Steel Inorganic materials 0.000 title claims abstract description 51
- 239000010959 steel Substances 0.000 title claims abstract description 51
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 24
- 239000010703 silicon Substances 0.000 claims description 24
- 230000001590 oxidative effect Effects 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 abstract description 39
- 239000013078 crystal Substances 0.000 abstract description 16
- 238000010438 heat treatment Methods 0.000 abstract description 5
- 238000007740 vapor deposition Methods 0.000 abstract description 5
- 238000005520 cutting process Methods 0.000 abstract description 4
- 229910003910 SiCl4 Inorganic materials 0.000 abstract 2
- 230000008020 evaporation Effects 0.000 abstract 2
- 238000001704 evaporation Methods 0.000 abstract 2
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 22
- 229910000976 Electrical steel Inorganic materials 0.000 description 19
- 239000007789 gas Substances 0.000 description 17
- 238000005229 chemical vapour deposition Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 10
- 238000000926 separation method Methods 0.000 description 6
- 238000005452 bending Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000005019 vapor deposition process Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000013001 point bending Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000005097 cold rolling Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005098 hot rolling Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000007712 rapid solidification Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910000702 sendust Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Landscapes
- Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は、切断等の加工性に富んだ高ケイ素鋼板の製
造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a method for producing a high-silicon steel plate that is highly workable in cutting and the like.
変圧器や発電機等の回転機の鉄心として用いられている
電磁鉄板のほとんどは、高ケイ素鋼板からなっている。Most electromagnetic iron plates used as cores of rotating machines such as transformers and generators are made of high-silicon steel plates.
この種の高ケイ素鋼板は、ケイ素含有量が増すにつれて
鉄損が低くな９、ケイ素含有量が６．５ｗｔ％付近では
、磁歪が０となり最大透磁率もピークになるなど、最も
優れた磁気特性を示すことが知られている。This type of high-silicon steel sheet has the best magnetic properties, with iron loss decreasing as the silicon content increases9, and magnetostriction reaching 0 and maximum magnetic permeability reaching a peak when the silicon content is around 6.5 wt%. is known to show.
このような高ケイ素鋼板の製造方法の１つとして、滲珪
法が知られている。この方法は、普通鋼板または４ｗｔ
％以下のケイ素を含有する低ケイ素鋼板に対して、Ｓｉ
Ｃ１＋を含有する無酸化ガス雰囲気中で、蒸着処理を
施して、鋼板の表面にケイ素を蒸着させ、次いで、５ｉ
Ｃ１４を含有しない無酸化ガス雰囲気中で、鋼板に対し
て拡散処理を施して、蒸着させたケイ素を鋼板中に拡散
させ、かくして、ケイ素を均質に含有させた高ケイ素鋼
板を得るものである。As one of the methods for producing such high-silicon steel sheets, the silica process is known. This method uses ordinary steel plate or 4wt
% or less of silicon, Si
Silicon is vapor-deposited on the surface of the steel plate by vapor deposition in a non-oxidizing gas atmosphere containing C1+, and then 5i
In a non-oxidizing gas atmosphere that does not contain C14, the steel plate is subjected to a diffusion treatment to diffuse the vapor-deposited silicon into the steel plate, thus obtaining a high-silicon steel plate containing silicon homogeneously.
しかしながら、このような従来の滲珪法によって得られ
た高ケイ素鋼板は、ケイ素の蒸着処理に続く拡散処理時
に、組織の結晶粒が成長して粒度が大きくなっているた
めに、加工性が悪く粒界破断を生じ易いので、これに行
なう加工の程度が大きい場合には、加工が容易でないと
いう問題があつた。However, high-silicon steel sheets obtained by the conventional silica method have poor workability because the crystal grains of the structure grow and the grain size becomes large during the diffusion treatment following the silicon vapor deposition treatment. Since grain boundary fractures are likely to occur, there is a problem that processing is not easy when the degree of processing is large.
この発明の目的は、上述の現状に鑑み、ケイ素を蒸着し
た鋼板の拡散処理時に、組織の結晶粒の成長を抑制して
結晶粒を小さい粒度にさせた、切断等の加工性に富んだ
高ケイ素鋼板を得ることができる、製造方法を提供する
ことにある。In view of the above-mentioned current situation, the purpose of the present invention is to suppress the growth of crystal grains in the structure and reduce the grain size during the diffusion treatment of silicon-deposited steel sheets, and to provide a highly workable material with excellent workability such as cutting. An object of the present invention is to provide a manufacturing method capable of obtaining a silicon steel plate.
この発明の方法は、鋼板に対して蒸着処理を施すことに
より、前記鋼板の表面にケイ素を蒸着させ、次いで、常
圧より高い圧力の無酸化ガス雰囲気中で前記鋼板に対し
て拡散処理を施すことにょ９、前記蒸着させたケイ素を
前記鋼板中に拡散させることに特徴を有するものである
。In the method of the present invention, silicon is vapor-deposited on the surface of the steel plate by subjecting the steel plate to a vapor deposition process, and then a diffusion process is performed on the steel plate in a non-oxidizing gas atmosphere at a pressure higher than normal pressure. Particularly 9, the method is characterized in that the vapor-deposited silicon is diffused into the steel sheet.
以下、この発明の製造方法について詳述する。 The manufacturing method of the present invention will be described in detail below.
この発明において用いられる鋼板の成分紹或は特に限定
されないが、優れた磁気特性を得るためには、以下に述
べる成分組成を有していることが望ましい。Although the composition of the steel sheet used in this invention is not particularly limited, in order to obtain excellent magnetic properties, it is desirable that the steel sheet has the following composition.
（１）ケイ素含有量が３〜６．５ｗｔ％の高ケイ素鋼板
を製造する場合；
炭素：０．０１ｗｔ％以下、ケイ素：４ｗｔ％以下、マ
ンガン：２ｗｔ％以下。不可避不純物はできるだけ少な
い方が望ましい。(1) When manufacturing a high-silicon steel sheet with a silicon content of 3 to 6.5 wt%; carbon: 0.01 wt% or less, silicon: 4 wt% or less, manganese: 2 wt% or less. It is desirable to have as few unavoidable impurities as possible.
（２）センダスト合金高ケイ素鋼板を製造する場合：炭
素： ０．０１ｗｔ％以下、ケイ素：４ｗｔ％以下、ア
ルミニウム：３〜８ｗｔ％、ニッケル：’４ｗｔ％以下
、マンガン：２ｗｔ％以下、クロムおよびチタン等の耐
食性を増す元素：５ｗｔ％以下。不可避不純物はできる
だけ少ない方が望ましい。(2) When manufacturing Sendust alloy high silicon steel sheet: Carbon: 0.01 wt% or less, Silicon: 4 wt% or less, Aluminum: 3 to 8 wt%, Nickel: 4 wt% or less, Manganese: 2 wt% or less, chromium and titanium. Elements that increase corrosion resistance such as: 5 wt% or less. It is desirable to have as few unavoidable impurities as possible.
鋼板は、切板状鋼板でも帯板状鋼板（銅帯）でもよく、
また、釧片の熱間圧延−冷間圧延によって得られたもの
でも、溶鋼の直接鋳造・急冷凝固法によって得られたも
のでもよい。ケイ素の蒸着をＣＶＤ法により行なうとき
には、蒸着時に鋼板の板厚が減少するから、製品板厚に
対し減少板厚分を付加した板厚のものを用いる必要があ
る。The steel plate may be a cut steel plate or a strip steel plate (copper strip),
Further, it may be obtained by hot rolling/cold rolling of a piece, or by direct casting/rapid solidification of molten steel. When silicon is vapor-deposited by the CVD method, the thickness of the steel plate decreases during vapor deposition, so it is necessary to use a steel plate with a thickness equal to the reduced thickness added to the product thickness.
この発明は、このような鋼板に対して、ケイ素を蒸着さ
せたのち拡散処理する隙に、常圧より高い圧力の無酸化
ガス雰囲気中で拡散処理を行ない、これによって鋼板中
にケイ素を拡散させると同時に組織の結晶粒の成長を抑
制して、結晶粒を小さい粒度にさせた高ケイ素鋼板を得
るものである。In this invention, after silicon is vapor-deposited on such a steel sheet, a diffusion treatment is performed in a non-oxidizing gas atmosphere at a pressure higher than normal pressure, thereby diffusing silicon into the steel sheet. At the same time, the growth of crystal grains in the structure is suppressed to obtain a high-silicon steel sheet in which the crystal grains have a small grain size.
第１図は、この発明の製造方法の１実施態様を示す説明
図である。第１図において、１は加熱炉、２はＣＶＤ炉
、３は拡散炉、４は冷却帯、５および６はそれぞれ拡散
炉３の入側および出側の雰囲気分離室、７は連続的に搬
送される帯板状鋼板（銅帯）である。FIG. 1 is an explanatory diagram showing one embodiment of the manufacturing method of the present invention. In Fig. 1, 1 is a heating furnace, 2 is a CVD furnace, 3 is a diffusion furnace, 4 is a cooling zone, 5 and 6 are atmosphere separation chambers on the entrance and exit sides of the diffusion furnace 3, respectively, and 7 is a continuous conveyance This is a strip-shaped steel plate (copper strip).
鋼板Ｓは、加熱炉１に導かれ、そこで１０２３〜１２０
０°Ｃ近辺の温度まで無酸化加熱されたのち、ＣＶＤ炉
２に導かれ、そこでｍｏ１分率で５ｉＣｊ、を５〜３５
％含んだ無酸化ガス雰囲気中で、１０２３〜１２００℃
の温度でＣＶＤ法（化学的気相蒸着法）により、その表
面にケイ素の蒸着が行なわれる。The steel plate S is guided to the heating furnace 1, where the steel plate S has a temperature of 1023 to 120
After being heated without oxidation to a temperature around 0°C, it is led to a CVD furnace 2, where it is heated to 5 to 35 molar fractions of 5iCj.
1023-1200℃ in a non-oxidizing gas atmosphere containing %
Silicon is deposited on the surface by CVD (chemical vapor deposition) at a temperature of .
次いで、鋼板Ｓは、雰囲気分離室５を通って拡散炉３に
導かれ、そこで５ｉＣｊ？、を含まない無酸化ガス雰囲
気中で、１２００〜１４００℃の温度で均熱され、銅板
Ｓの表面に蒸着したケイ素を鋼板Ｓ中へ拡散する拡散処
理が行なわれる。The steel plate S is then led through the atmosphere separation chamber 5 to the diffusion furnace 3 where 5iCj? The copper plate S is soaked at a temperature of 1200 to 1400° C. in a non-oxidizing gas atmosphere that does not contain , and a diffusion treatment is performed to diffuse silicon deposited on the surface of the copper plate S into the steel plate S.
ここで、拡散炉３は、無酸化ガス雰囲気の圧力が常圧よ
シ高くなるように、雰囲気制御が行なわれている。拡散
炉３の入側および出側の雰囲気分離室５および６は、拡
散炉３の雰囲気と外部の雰囲気とを分離するだめの手段
、例えばラビランスやシールロール等を備えている。拡
散炉３の雰囲気を特に高圧にする場合には、入側および
出側の雰囲気分離室５および６は多段に設けることがで
きる。拡散炉３の雰囲気ガスとしては、Ａｒ 、 Ｎ２
。Here, the atmosphere of the diffusion furnace 3 is controlled so that the pressure of the non-oxidizing gas atmosphere is higher than normal pressure. The atmosphere separation chambers 5 and 6 on the inlet and outlet sides of the diffusion furnace 3 are equipped with means for separating the atmosphere of the diffusion furnace 3 from the outside atmosphere, such as a labyrinth or a seal roll. If the atmosphere in the diffusion furnace 3 is to be under particularly high pressure, the atmosphere separation chambers 5 and 6 on the inlet and outlet sides can be provided in multiple stages. The atmospheric gas in the diffusion furnace 3 includes Ar, N2
.
Ｈｅ等の不活性ガスや、Ｈ２、ＣＨ４等の還元性ガスが
用いられる。拡散処理時に、鋼板Ｓの表面に酸化膜を形
成させず、また不純物を取除くという観点からは、Ｈ２
の使用が有効である。An inert gas such as He or a reducing gas such as H2 or CH4 is used. From the viewpoint of not forming an oxide film on the surface of the steel sheet S and removing impurities during the diffusion treatment, H2
is effective.
一般に、ケイ素を蒸着した鋼板は、ケイ素の拡散処理時
のガス雰囲気の条件の違いによって、拡散処理時に組織
の結晶粒の成長が著しく異なることが知られていたが、
ガス雰囲気の圧力による影響については明らかでなかっ
た。本発明者等の研究によれば、ＣＶＤ法によりケイ素
を蒸着した鋼板に対して、Ａｒを用いた無酸化ガス雰囲
気の圧力を変えて拡散処理を施した場合、結晶粒の平均
粒径は、常圧のとき０．４〜０．５ｍ、１．５気圧のと
き０．３ｍ７Ｉ１前後、２気圧以上のとき０，２ ｙｎ
ｓより小になることがわかった。これは、拡散処理時の
雰囲気が高圧になるにつれて、結晶粒の成長に必要な駆
動力たる、鋼板表面での界面エネルギーが増加すること
が原因であると考えられる。従って、ケイ素を蒸着した
鋼板Ｓに対する拡散処理時に、拡散炉３の無酸化ガス雰
囲気の圧力を常圧よシ高い適宜の圧力に制御することに
よって、組織の結晶粒を容易に小さい粒度に抑制するこ
とができる。In general, it has been known that the growth of crystal grains in silicon-deposited steel sheets differs markedly during the diffusion process depending on the gas atmosphere conditions during the silicon diffusion process.
The influence of the pressure of the gas atmosphere was not clear. According to research conducted by the present inventors, when a steel plate on which silicon has been deposited by the CVD method is subjected to diffusion treatment by changing the pressure of a non-oxidizing gas atmosphere using Ar, the average grain size of the crystal grains is 0.4 to 0.5 m at normal pressure, 0.3 m7I1 at 1.5 atm, 0.2 yn at 2 atm or more
It turns out that it is smaller than s. This is thought to be due to the fact that as the atmosphere during the diffusion process becomes higher pressure, the interfacial energy on the surface of the steel sheet, which is the driving force required for grain growth, increases. Therefore, during the diffusion treatment of the silicon-deposited steel sheet S, by controlling the pressure of the non-oxidizing gas atmosphere in the diffusion furnace 3 to an appropriate pressure higher than normal pressure, the crystal grains in the structure can be easily suppressed to a small grain size. be able to.
ケイ素を蒸着した鋼板Ｓは、無酸化ガス雰囲気の圧力が
常圧より高い圧力に制御された拡散炉３での拡散処理に
よって、ケイ素の拡散と同時に組織の結晶粒の成長の抑
制が行なわれ、組織の結晶粒を小さな粒度にさせた高ケ
イ素鋼板となる。次いで、鋼板Ｓば、雰囲気分離室６を
通って冷却帯４に導かれ、そこで冷却されたのち、巻取
られる。The silicon-deposited steel sheet S is subjected to a diffusion treatment in a diffusion furnace 3 in which the pressure of a non-oxidizing gas atmosphere is controlled to be higher than normal pressure, thereby simultaneously diffusing silicon and suppressing the growth of crystal grains in the structure. This results in a high-silicon steel sheet with a small crystal grain structure. Next, the steel sheet S is guided through the atmosphere separation chamber 6 to the cooling zone 4, where it is cooled and then wound up.
以上の実施態様では、帯板状の鋼板Ｓに対して、連続し
たＣＶＤ炉２および拡散炉３で蒸危処理および拡散処理
を連続的に行なつプこが、切板状の鋼板の場合には、１
つの炉の雰囲気等を切換えることによって、蒸着処理お
よび拡散処理を連続的に行なうこともできる。また、鋼
板に対するケイ素の蒸着もＣＶＤ法に限らず、Ｉ）Ｖ
、Ｄ法（物理的気相蒸着法）等を用いることもできる。In the embodiment described above, the vapor hazard treatment and the diffusion treatment are continuously performed on the strip-shaped steel plate S in the continuous CVD furnace 2 and the diffusion furnace 3, but in the case of the cut plate-shaped steel plate, is 1
By switching the atmosphere of the two furnaces, the vapor deposition process and the diffusion process can be performed continuously. In addition, silicon vapor deposition on steel sheets is not limited to the CVD method;
, D method (physical vapor deposition method), etc. can also be used.
小型のＣＶＤ炉−拡散炉を用い、０．３ｕ厚の３ｗｔ％
ケイ素鋼板に対して、モル分率２０％の５ｉＣ１４を含
有するＡｒ ＳｉＣ＆混合ガスの無酸化ガス雰囲気中
で、ＣＶＤ法によりケイ素の蒸着処理を行ない、次いで
、Ｓ ＩＣ１ｈを含まないＡｒの無酸化ガス雰囲気の圧
力を、常圧および高圧側に変えた条件下で、１２００°
Ｃ２２０分の拡散処′ＰＩを行なって、高ケイ素鋼板を
製造した。そして、筒ケイ素鋼板の組織の平均結晶粒径
と拡散処理時の雰囲気の圧力との関係を調べた。その結
果全第２図に示す。寸／こ、高ケイ素鋼板から切り出し
だ試験片について３点曲げ試験を行ない、そのときの破
断に至る件での曲げ半径を測定して、粒界破断の起こり
すらさ１、即ち、粒界破断を起こさずに塑性加工できる
加工性の良好さを調べた。その結果を第３図に示す。Using a small CVD furnace-diffusion furnace, 3wt% of 0.3u thickness
A silicon steel plate is subjected to a silicon vapor deposition process using a CVD method in an Ar SiC and mixed gas non-oxidizing gas atmosphere containing 5iC14 at a mole fraction of 20%, and then an Ar non-oxidizing gas containing no SIC1h is applied. 1200° under conditions where the atmospheric pressure was changed to normal pressure and high pressure side.
A high-silicon steel plate was manufactured by performing a diffusion treatment 'PI' for C220 minutes. Then, the relationship between the average grain size of the structure of the cylindrical silicon steel sheet and the pressure of the atmosphere during the diffusion treatment was investigated. The results are shown in Figure 2. A three-point bending test was performed on a test piece cut from a high-silicon steel plate, and the bending radius at which fracture occurred was measured to determine the likelihood of intergranular rupture (1), that is, intergranular rupture. We investigated the good workability of plastic working without causing any problems. The results are shown in FIG.
第２図に示されるように、従来法通り、拡散処理時の雰
囲気の圧力が常圧であるときには、鋼板組織の結晶が拡
散処理時に成長するので、平均結晶粒径は０．４〜ｏ、
ｓｍの大きなものに々っている。As shown in Fig. 2, as in the conventional method, when the pressure of the atmosphere during the diffusion treatment is normal pressure, the crystals of the steel sheet structure grow during the diffusion treatment, so the average grain size is 0.4~0.
It is suitable for large size SM.
これに対し、この発明の方法通シ、拡散処理時の雰囲気
の圧力が常圧より高くなると、それにつれて鋼板表面で
の界面エネルギーが増加するために、鋼板組織の結晶が
拡散処理時に成長を抑制され、平均結晶粒径は次第に小
さくなっている。そして、雰囲気の圧力が２気圧以上で
は、平均結晶粒径は０．２ｕ弱程度と非常に小さくなる
。On the other hand, according to the method of the present invention, when the pressure of the atmosphere during the diffusion treatment becomes higher than normal pressure, the interfacial energy on the surface of the steel sheet increases accordingly, which suppresses the growth of crystals in the steel sheet structure during the diffusion treatment. The average grain size is gradually decreasing. When the atmospheric pressure is 2 atmospheres or more, the average crystal grain size becomes very small, about 0.2 μ or less.
第３図に示されるように、この発明の方法通り、拡散処
理時の努囲気の圧力が常圧より高いときには、平均結晶
粒径が小さいために、３点曲げ試験での曲げ半径は小さ
く、加工性が良好になっている。そして、雰囲気の圧力
が２気圧以上では、曲げ半径が１０ｕ弱程度と非常に小
さく、加工性が著しく良好になる。この曲げ半径の小さ
い高ケイ素鋼板では、小型のトロイダルコイルの鉄心の
製造が可能である。As shown in FIG. 3, according to the method of the present invention, when the pressure of the surrounding atmosphere during the diffusion treatment is higher than normal pressure, the bending radius in the three-point bending test is small because the average crystal grain size is small. Good workability. When the pressure of the atmosphere is 2 atmospheres or more, the bending radius is very small, about 10 microns, and the workability is extremely good. This high-silicon steel plate with a small bending radius makes it possible to manufacture a small toroidal coil core.
この発明によれば、組織の結晶粒を容易に小さい粒度に
させた、切断等の加工性に富んだ高ケイ素鋼板を製造す
ることができる。According to the present invention, it is possible to produce a high-silicon steel sheet that has easy crystal grains in its structure and is highly workable in cutting and the like.
第１図は、この発明の製造方法の１実施態様を示す説明
図、第２図は、高ケイ素鋼板の組織の平均結晶粒径と拡
散処理時のＹ囲気の圧力との関係を示すグラフ、第３図
は、高ケイ素鋼板の組織の平均結晶粒径と破断に至る壕
での曲げ半径との関係を示すグラフである。図面におい
て、１・加熱炉、 ２− ＣＶ Ｄ炉、３ 拡
散炉、 ４ ・冷却帯、５．６・雰囲気分離
室、 Ｓ・鋼板。FIG. 1 is an explanatory diagram showing one embodiment of the manufacturing method of the present invention, and FIG. 2 is a graph showing the relationship between the average grain size of the structure of a high-silicon steel sheet and the pressure of the Y surrounding atmosphere during diffusion treatment. FIG. 3 is a graph showing the relationship between the average grain size of the structure of a high-silicon steel plate and the bending radius at the groove that leads to fracture. In the drawings, 1. Heating furnace, 2. CVD furnace, 3. Diffusion furnace, 4. Cooling zone, 5.6. Atmosphere separation chamber, S. Steel plate.
Claims (1)
圧力の無酸化雰囲気中で、前記蒸着させたケイ素を前記
鋼板中に拡散させることを特徴とする、処理鋼板の製造
方法。A method for producing a treated steel sheet, which comprises depositing silicon on the surface of a steel sheet, and then diffusing the deposited silicon into the steel sheet in a non-oxidizing atmosphere at a pressure higher than normal pressure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16805586A JPH076024B2 (en) | 1986-07-18 | 1986-07-18 | Method of manufacturing treated steel sheet |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16805586A JPH076024B2 (en) | 1986-07-18 | 1986-07-18 | Method of manufacturing treated steel sheet |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6326324A true JPS6326324A (en) | 1988-02-03 |
| JPH076024B2 JPH076024B2 (en) | 1995-01-25 |
Family
ID=15860993
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16805586A Expired - Fee Related JPH076024B2 (en) | 1986-07-18 | 1986-07-18 | Method of manufacturing treated steel sheet |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH076024B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008012077A (en) * | 2006-07-06 | 2008-01-24 | Kojima Kiyoko | Toe pad |
-
1986
- 1986-07-18 JP JP16805586A patent/JPH076024B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008012077A (en) * | 2006-07-06 | 2008-01-24 | Kojima Kiyoko | Toe pad |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH076024B2 (en) | 1995-01-25 |
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