JPS6326312A - Apparatus for producing steel sheet - Google Patents
Apparatus for producing steel sheetInfo
- Publication number
- JPS6326312A JPS6326312A JP16805386A JP16805386A JPS6326312A JP S6326312 A JPS6326312 A JP S6326312A JP 16805386 A JP16805386 A JP 16805386A JP 16805386 A JP16805386 A JP 16805386A JP S6326312 A JPS6326312 A JP S6326312A
- Authority
- JP
- Japan
- Prior art keywords
- base material
- steel sheet
- silicon steel
- zone
- sheet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910000831 Steel Inorganic materials 0.000 title claims abstract description 13
- 239000010959 steel Substances 0.000 title claims abstract description 13
- 229910000976 Electrical steel Inorganic materials 0.000 claims abstract description 41
- 239000000463 material Substances 0.000 claims abstract description 31
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 22
- 239000010703 silicon Substances 0.000 claims abstract description 22
- 238000002791 soaking Methods 0.000 claims abstract description 19
- 230000001590 oxidative effect Effects 0.000 claims abstract description 14
- 238000010438 heat treatment Methods 0.000 claims abstract description 13
- 238000007740 vapor deposition Methods 0.000 claims abstract description 9
- 238000004519 manufacturing process Methods 0.000 claims description 17
- 238000001816 cooling Methods 0.000 claims description 10
- 238000005019 vapor deposition process Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 abstract description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 21
- 239000013078 crystal Substances 0.000 abstract description 12
- 238000000034 method Methods 0.000 abstract description 12
- 238000009792 diffusion process Methods 0.000 abstract description 11
- 239000011261 inert gas Substances 0.000 abstract description 4
- 230000008020 evaporation Effects 0.000 abstract description 3
- 238000001704 evaporation Methods 0.000 abstract description 3
- 239000012159 carrier gas Substances 0.000 abstract description 2
- 229910003910 SiCl4 Inorganic materials 0.000 abstract 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 abstract 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000005049 silicon tetrachloride Substances 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- 208000032843 Hemorrhage Diseases 0.000 description 1
- 206010040844 Skin exfoliation Diseases 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 208000034158 bleeding Diseases 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Landscapes
- Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
- Chemical Vapour Deposition (AREA)
- Manufacturing Of Steel Electrode Plates (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は、鋼板、特に、電磁材料用の電気鉄板として
用いられる鋼板の製造装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an apparatus for manufacturing steel plates, particularly steel plates used as electrical iron plates for electromagnetic materials.
変圧器等の鉄心用電気鉄板には、高珪素鋼板が使用され
ている。高珪素鋼板においては、珪素の含有量が多いほ
ど鉄損が低減し、そして、珪素の含有量が約６．５ｗｔ
＋≠ になると、磁気歪がほぼ０となると共に最大透磁
率がピークになる。このように高珪素鋼板は、優れた磁
気特性を有する。High-silicon steel plates are used for electrical iron plates for cores of transformers and the like. In high-silicon steel sheets, the higher the silicon content, the lower the iron loss, and the silicon content is approximately 6.5wt.
When +≠, the magnetostriction becomes almost 0 and the maximum magnetic permeability reaches its peak. In this way, high-silicon steel sheets have excellent magnetic properties.
従来、上記高珪素鋼板の製造方法として、次の方法、所
謂、番珪処理法か知られている。即ち、普通鋼板捷たは
４．ｗｔ楚 以下の珪素を含有する低珪素鋼板（以下、
母材板と云う）に対し、４塩化珪素ガス（ｓｉ、ｃｆ４
） ｋ含有する無酸化ガス中において、高温度下でＣ
ＶＤ法（化学気相蒸着法）あるいはＰＶＤ （物理気相
蒸着法）により蒸着処理を施し、これにより、母材板の
表面に珪素を蒸着し、次いで、４塩化珪素ガスを含有し
ない無酸化ガス中において、蒸着した珪素を母材板中に
拡散させ、かくして、母材板中に珪素を浸透させる。Conventionally, as a method for producing the above-mentioned high-silicon steel sheet, the following method, the so-called silica treatment method, has been known. That is, ordinary steel plate cutting or 4. wt Chu Low-silicon steel plate containing silicon below (hereinafter referred to as
silicon tetrachloride gas (si, cf4)
) C at high temperature in a non-oxidizing gas containing K.
A vapor deposition process is performed using the VD method (chemical vapor deposition method) or PVD (physical vapor deposition method), thereby depositing silicon on the surface of the base material plate, and then using a non-oxidizing gas that does not contain silicon tetrachloride gas. Therein, the deposited silicon is diffused into the base plate, thus penetrating the silicon into the base plate.
上述した材珪処理法によって製造される高珪素鋼板にお
いては、母材板の表面に蒸着された珪素を拡散させる過
程で結晶粒が成長して粒径が大きくなる。この結果、上
述したように磁気特性が良好になる反面、粒界割れが生
じゃすくなる。In the high-silicon steel sheet manufactured by the above-described silicon treatment method, crystal grains grow and the grain size increases during the process of diffusing silicon deposited on the surface of the base material sheet. As a result, although the magnetic properties are improved as described above, grain boundary cracks are more likely to occur.
このようなことから、上述した滲珪処理法によって製造
された高珪素鋼板に加える加工の程度が小さい場合には
、高珪素鋼板を若干（２００〜３００°Ｃ）加熱すれば
加工できるので問題は生じないが、高珪素鋼板に大きな
加工を加える場合には、上述した理由によってこれが行
なえない。For this reason, if the degree of processing to be applied to the high-silicon steel plate manufactured by the above-mentioned silicon-bleeding treatment method is small, the problem is not that it can be processed by slightly heating the high-silicon steel plate (200 to 300°C). Although this does not occur, when large-scale processing is applied to a high-silicon steel plate, this cannot be done for the reasons mentioned above.
そこで、滲珪処理法によって高珪素鋼板を連続的に製造
する場合に、製造後に施す加工の程度に応じて結晶粒の
粒径を変えることができる、鋼板の製造装置の開発が望
捷れているが、かかる装置は寸だ提案されていない。Therefore, when manufacturing high-silicon steel sheets continuously using the silica treatment method, it is desirable to develop a steel sheet manufacturing device that can change the grain size of the crystal grains depending on the degree of processing performed after manufacturing. However, no such device has been proposed.
従って、この発明の目的は、滲珪処理法によって高珪素
鋼板を連続的に製造する場合に、製造後に施す加工の程
度に応じて結晶粒の粒径を変えることができる、鋼板の
製造装置を提供することにある。Therefore, an object of the present invention is to provide a steel sheet manufacturing apparatus that can change the grain size of crystal grains depending on the degree of processing performed after manufacturing when high-silicon steel sheets are continuously manufactured by the silicon exfoliation treatment method. It is about providing.
この発明は、コイル状に巻かれた低珪素鋼板からなる母
材板を繰り出すだめのアンコイラ−と、前記アンコイラ
−に続いて設けられた、前記母材板を加熱するための加
熱帯と、前記加熱帯に続いて設けられた、前記加熱帯内
で加熱された前記母材板に蒸着処理を施すための蒸着帯
と、前記蒸着帯に続いて設けられた、前記蒸着帯内で前
記母材板の表面に蒸着された珪素を前記母材板中に拡散
させて、高珪素鋼板ケ得るための均熱帯と、前記均熱帯
内を還元性または酸化性雰囲気に維持するためのガス供
給手段と、前記均熱帯に絖いて設はられ／ζ、前記高珪
素鋼板を冷却するための冷却帯と、前記冷却帯に続いて
設けられた、前記冷却帯内で冷却された前記高珪素鋼板
を巻き取るだめのコイラーとからなることに特徴を有す
るものである。The present invention includes: an uncoiler for unwinding a base material plate made of a low-silicon steel plate wound into a coil; a heating zone provided following the uncoiler for heating the base material plate; a vapor deposition zone provided following the heating zone for performing a vapor deposition process on the base material plate heated within the heating zone; A soaking zone for diffusing silicon deposited on the surface of the plate into the base material plate to obtain a high-silicon steel plate; and a gas supply means for maintaining the soaking zone in a reducing or oxidizing atmosphere. , a cooling zone provided in the soaking zone for cooling the high silicon steel plate, and a cooling zone provided following the cooling zone to wind the high silicon steel plate cooled in the cooling zone. It is characterized in that it consists of a coiler with a coiler.
次に、この発明の、鋼板の製造装置の一実施態様を図面
を参照しながら説明する。Next, one embodiment of the steel plate manufacturing apparatus of the present invention will be described with reference to the drawings.
第１図は、この発明の、鋼板の製造装置の一実施態様を
示すブロック図である。FIG. 1 is a block diagram showing one embodiment of a steel plate manufacturing apparatus of the present invention.
第１図において、アンコイラ−１は、低珪素鋼板からな
るコイル状に巻かれた母材板２を繰り出す。In FIG. 1, an uncoiler 1 unwinds a base material plate 2 made of a low-silicon steel plate and wound into a coil shape.
加熱帯３は、後述する蒸着帯内で母材板２に、例えば、
ＣＶＤ法により蒸着が行なえるように、母材板２を１１
００〜１２００℃に加熱する。蒸着帯４は、母材板２の
表面に向けて吹付はノズルからアルゴンガス等のキャリ
ヤガスと共にＳ ｉ Ｃ４ガスを吹き付けて、無酸化ガ
ス中で母材板２の表面に珪素を蒸着する。The heating zone 3 is applied to the base material plate 2 within the vapor deposition zone described below, for example.
In order to perform vapor deposition using the CVD method, the base material plate 2 is
Heat to 00-1200°C. In the vapor deposition zone 4, silicon is vapor-deposited on the surface of the base material plate 2 in a non-oxidizing gas by spraying SiC4 gas together with a carrier gas such as argon gas from a nozzle toward the surface of the base material plate 2.
均熱帯５は、蒸着帯４によって表面に珪素が蒸着された
母材板ｚｆ１２００〜１４００℃に加熱して、母材板２
０表面に蒸着された珪素を母材板２中に拡散させ、例え
ば、６．５ ｗｔ％の珪素を母材板２中に浸透させ、か
くして、高珪素鋼板８を製造する。The soaking zone 5 heats the base material plate zf on the surface of which silicon is vapor-deposited by the vapor deposition zone 4 to 1200 to 1400°C.
The silicon deposited on the 0 surface is diffused into the base material plate 2, for example, 6.5 wt % silicon is infiltrated into the base material plate 2, thus producing the high silicon steel plate 8.
ガス供給手段６は、Ａｒ、Ｈｅ等の不活性ガスと共にＨ
，、、ＣＨ，、ＣｎＨｎ 、 ＮＨ，等の還元性ガス、
または、空気、Ｏ，、、Ｈ２Ｏ、Ｃｏ２等の酸化性ガス
を均熱帯５に供給して、均熱帯５内を還元性または酸化
性雰囲気に維持する。The gas supply means 6 supplies H along with inert gas such as Ar and He.
Reducing gases such as , , CH, , CnHn, NH, etc.
Alternatively, an oxidizing gas such as air, O, H2O, Co2, etc. is supplied to the soaking zone 5 to maintain the inside of the soaking zone 5 in a reducing or oxidizing atmosphere.
冷却帯７は、均熱帯５によって得られた高珪素鋼板８を
所定温度に冷却する。コイラー９は、冷却帯７によって
冷却された高珪素鋼板８をコイル状に巻き取る。The cooling zone 7 cools the high silicon steel plate 8 obtained in the soaking zone 5 to a predetermined temperature. The coiler 9 winds up the high silicon steel plate 8 cooled by the cooling zone 7 into a coil shape.
上述した、この発明の、鋼板の製造装置の一実施態様に
よって、製造後に大きな加工を施す高珪素鋼板ｋＮ造す
るには、ガス供給手段６から不活性ガスと共に酸化性ガ
スを均熱帯５内に供給する。According to the above-described embodiment of the steel sheet manufacturing apparatus of the present invention, in order to manufacture a high silicon steel sheet which undergoes extensive processing after manufacturing, an oxidizing gas is supplied from the gas supply means 6 together with an inert gas into the soaking zone 5. supply
これによって、蒸着帯４内で母材板２の表面に蒸着され
た珪素は、酸化性ガス雰囲気に維持された均熱帯５内で
母材板２中に拡散して高珪素鋼板８が連続的に製造され
るが、酸化性ガス雰囲槃下で拡散が行なわれるので、高
珪素鋼板８の結晶粒は余り成長しない。この結果、高珪
素鋼板８に大きな加工を施すことができる。なお、加工
を施した後の高珪素鋼板８には、磁気特性を高珪素によ
る作用と相俟って向上させるために高温下で焼鈍を施し
て、その結晶粒の粒径を大きくする。As a result, the silicon deposited on the surface of the base material plate 2 in the vapor deposition zone 4 is diffused into the base material plate 2 in the soaking zone 5 maintained in an oxidizing gas atmosphere, and the high silicon steel plate 8 is continuously formed. However, since the diffusion is performed in an oxidizing gas atmosphere, the crystal grains of the high silicon steel sheet 8 do not grow much. As a result, large-scale processing can be performed on the high-silicon steel plate 8. Note that the processed high-silicon steel plate 8 is annealed at high temperature to increase the grain size of its crystal grains in order to improve the magnetic properties together with the effect of high silicon content.
一方、製造後にそれほど大きな加工を施さない高珪素鋼
板を製造するには、ガス供給手段６から不活性ガスと共
に還元性ガスを均熱帯５に供給する。On the other hand, in order to manufacture a high-silicon steel sheet that does not require much processing after manufacturing, a reducing gas is supplied from the gas supply means 6 to the soaking zone 5 together with an inert gas.
これによって、蒸着帯４内で母材板２の表面に蒸着され
た珪素は、還元性ガス雰囲気に維持された均熱帯５内で
母材板２中に拡散して高珪素鋼板８が連続的に製造され
る。このように、母材板２の表面に蒸着された珪素が還
元性ガス雰囲気下で母材板２中に拡散すると、得られた
高珪素鋼板８の結晶粒が成長して、その粒径が大きくな
るので、高珪素による作用と相俟って磁気特性の優れた
高珪素鋼板８が連続的に製造される。As a result, silicon deposited on the surface of the base material plate 2 in the vapor deposition zone 4 is diffused into the base material plate 2 in the soaking zone 5 maintained in a reducing gas atmosphere, and the high silicon steel plate 8 is continuously formed. Manufactured in As described above, when the silicon deposited on the surface of the base material plate 2 is diffused into the base material plate 2 in a reducing gas atmosphere, the crystal grains of the obtained high silicon steel plate 8 grow, and the grain size increases. Since the size increases, together with the effect of high silicon content, high silicon steel plates 8 with excellent magnetic properties are continuously manufactured.
次に、均熱帯５内の雰囲気をアルゴン：９Ｂ係、酸素：
２％の酸化性ガス雰囲気に維持し、拡散処理温度を１２
００ ”Ｃおよび１３００°Ｃにそれぞれ保持し、得ら
れた高珪素鋼板８の平均結晶粒径と拡散処理温度との関
係について調べ、そして、均熱帯５内の雰囲気ケアルゴ
ンー７５係、水素：２５係の還元性ガス雰囲気に維持し
、拡散処理温度を１２００ ”Ｃおよび１３００℃にそ
れぞれ保持し、得られた高珪素鋼板８の平均結晶粒径と
拡散処理時間との関係について調べた。これらの結果を
第２図に示す。Next, the atmosphere in the soaking zone 5 is argon: 9B, oxygen:
Maintaining a 2% oxidizing gas atmosphere, the diffusion treatment temperature was set to 12%.
The relationship between the average grain size of the obtained high silicon steel sheet 8 and the diffusion treatment temperature was investigated, and the atmosphere in the soaking zone 5 was maintained at temperatures of 75% and 25%. The reducing gas atmosphere was maintained at 1200''C and the diffusion treatment temperature was maintained at 1300°C, respectively, and the relationship between the average grain size of the obtained high silicon steel sheet 8 and the diffusion treatment time was investigated. These results are shown in FIG.
第２図から明らかなように、酸化性ガス雰囲気下で拡散
処理を施した場合には、拡散処理時間が経過しても結晶
粒径はほとんど変らず、一方、還元性ガス雰囲気下で拡
散処理を施した場合には、拡散処理時間が経過するにつ
れて結晶粒径が大きくなることがわかる。As is clear from Figure 2, when diffusion treatment is performed in an oxidizing gas atmosphere, the crystal grain size hardly changes even after the diffusion treatment time elapses; It can be seen that when the diffusion treatment is performed, the crystal grain size becomes larger as the diffusion treatment time elapses.
一８＝
以−に説明したように、この発明によれば、滲珪処理法
によって、高珪素鋼板を連続的に製造する場合に、製造
後に施す加工の程度に応じて結晶粒の粒径を変えること
ができるといったきわめて有用な効果がもたらされる。18= As explained above, according to the present invention, when high-silicon steel sheets are continuously produced by the silica treatment method, the grain size of the crystal grains can be adjusted according to the degree of processing performed after production. This has the extremely useful effect of being able to change things.
第１図は、この発明の、鋼板の製造装置の一実施態様を
示すブロック図、第２図は、平均結晶粒径と拡散処理時
間との関係を示すグラフである。
図面において、
］・・・アンコイラ−１２・・・母材板、３・・・加熱
帯、 ４・・・蒸着処理帯、５・・・均熱帯、
６・・・ガス供給手段、７・・・冷却帯、
８・・・高珪素鋼板１．９・・コイラー。FIG. 1 is a block diagram showing one embodiment of the steel sheet manufacturing apparatus of the present invention, and FIG. 2 is a graph showing the relationship between average grain size and diffusion treatment time. In the drawings, ]... Uncoiler 12... Base material plate, 3... Heating zone, 4... Evaporation treatment zone, 5... Soaking zone,
6... Gas supply means, 7... Cooling zone,
8...High silicon steel plate 1.9...Coiler.
Claims (1)
すためのアンコイラーと、前記アンコイラーに続いて設
けられた、前記母材板を加熱するための加熱帯と、前記
加熱帯に続いて設けられた、前記加熱帯内で加熱された
前記母材板に蒸着処理を施すための蒸着帯と、前記蒸着
帯に続いて設けられた、前記蒸着帯内で前記母材板の表
面に蒸着された珪素を前記母材板中に拡散させて、高珪
素鋼板を得るための均熱帯と、前記均熱帯内を還元性ま
たは酸化性雰囲気に維持するためのガス供給手段と、前
記均熱帯に続いて設けられた、前記高珪素鋼板を冷却す
るための冷却帯と、前記冷却帯に続いて設けられた、前
記冷却帯内で冷却された前記高珪素鋼板を巻き取るため
のコイラーとからなることを特徴とする、鋼板の製造装
置。an uncoiler for unwinding a base material plate made of a low-silicon steel plate wound into a coil; a heating zone provided following the uncoiler for heating the base material plate; and a heating zone provided subsequent to the heating zone. a vapor deposition zone for performing a vapor deposition process on the base material plate heated in the heating zone; a soaking zone for diffusing silicon into the base material plate to obtain a high-silicon steel sheet; a gas supply means for maintaining the soaking zone in a reducing or oxidizing atmosphere; a cooling zone for cooling the high-silicon steel plate provided at Steel plate manufacturing equipment featuring:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16805386A JPS6326312A (en) | 1986-07-18 | 1986-07-18 | Apparatus for producing steel sheet |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16805386A JPS6326312A (en) | 1986-07-18 | 1986-07-18 | Apparatus for producing steel sheet |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6326312A true JPS6326312A (en) | 1988-02-03 |
| JPH0465901B2 JPH0465901B2 (en) | 1992-10-21 |
Family
ID=15860956
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16805386A Granted JPS6326312A (en) | 1986-07-18 | 1986-07-18 | Apparatus for producing steel sheet |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6326312A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3120859B2 (en) * | 1991-09-03 | 2000-12-25 | テネコ・オートモーティブ・インコーポレーテッド | Switchable roll stabilizer bar |
| KR101404136B1 (en) * | 2012-03-19 | 2014-06-10 | 한국기계연구원 | Method of forming electrical steel sheet having high silicon concentration and system for fabricating electrical steel sheet |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4893522A (en) * | 1972-03-13 | 1973-12-04 |
-
1986
- 1986-07-18 JP JP16805386A patent/JPS6326312A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4893522A (en) * | 1972-03-13 | 1973-12-04 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3120859B2 (en) * | 1991-09-03 | 2000-12-25 | テネコ・オートモーティブ・インコーポレーテッド | Switchable roll stabilizer bar |
| KR101404136B1 (en) * | 2012-03-19 | 2014-06-10 | 한국기계연구원 | Method of forming electrical steel sheet having high silicon concentration and system for fabricating electrical steel sheet |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0465901B2 (en) | 1992-10-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |