JPH0428454U - - Google Patents
Info
- Publication number
- JPH0428454U JPH0428454U JP1990069531U JP6953190U JPH0428454U JP H0428454 U JPH0428454 U JP H0428454U JP 1990069531 U JP1990069531 U JP 1990069531U JP 6953190 U JP6953190 U JP 6953190U JP H0428454 U JPH0428454 U JP H0428454U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor chip
- light
- receiving surface
- solid
- lead frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 10
- 239000011347 resin Substances 0.000 claims description 5
- 229920005989 resin Polymers 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 4
- 238000000465 moulding Methods 0.000 claims 3
- 238000006243 chemical reaction Methods 0.000 claims 2
- 239000011159 matrix material Substances 0.000 claims 2
- 239000011358 absorbing material Substances 0.000 claims 1
- 238000003384 imaging method Methods 0.000 claims 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
第１図は本考案の一実施例を示す断面図、第２
図は本考案の他の実施例を示す断面図、第３図は
従来の固体撮像素子及び鏡筒の断面図である。
１０，３０……固体撮像素子、１１，３１……
半導体チツプ、１２……セラミツクパツケージ、
１３，３２……リード、１４，３４……ワイヤ、
１５，１６……シールガラス、１７，３６……回
折格子、２０……鏡筒、２１……光学レンズ、２
２……絞り、２３……フイルタ、３３……アイラ
ンド、３５……モールド樹脂、３７……透光性樹
脂。
Fig. 1 is a sectional view showing one embodiment of the present invention;
The figure is a sectional view showing another embodiment of the present invention, and FIG. 3 is a sectional view of a conventional solid-state image sensor and lens barrel. 10, 30... Solid-state image sensor, 11, 31...
Semiconductor chip, 12...ceramic package,
13, 32... Lead, 14, 34... Wire,
15, 16... Seal glass, 17, 36... Diffraction grating, 20... Lens barrel, 21... Optical lens, 2
2...Aperture, 23...Filter, 33...Island, 35...Mold resin, 37...Transparent resin.
Claims (1)
状に配列されてなる半導体チツプと、 この半導体チツプを凹部の底面に固着して収納
するパツケージと、 このパツケージに埋設され上記半導体チツプと
電気的に接続されるリードフレームと、 上記パツケージの凹部を密閉すると共に特定の
波長より長い波長の光を吸収するシールガラスと
、 上記半導体チツプの受光面を覆うようにして上
記シールガラスの表面に装着された回折格子と、 を備えたことを特徴とする固体撮像素子。 (2) 受光面に複数の光電変換素子がマトリクス
状に配列されてなる半導体チツプと、この半導体
チツプが固着されるアイランド部及び上記半導体
チツプに電気的に接続される リード部からなる
リードフレームと、 上記半導体チツプを上記リードフレームと共に
モールドする透光性のモールド樹脂と、 上記半導体チツプの受光面と覆うようにして上
記モールド樹脂の表面に装着された回折格子と、 を備えたことを特徴とする固体撮像素子。 (3) 上記モールド樹脂が、特定の波長より長い
波長の光を吸収する吸収材料を含有することを特
徴とする請求項第１項記載の固体撮像素子。[Claims for Utility Model Registration] (1) A semiconductor chip in which a plurality of photoelectric conversion elements are arranged in a matrix on a light-receiving surface, a package for storing the semiconductor chip by fixing it to the bottom of a recess, and a lead frame buried and electrically connected to the semiconductor chip; a seal glass that seals the recess of the package and absorbs light with a wavelength longer than a specific wavelength; and a seal glass that covers the light-receiving surface of the semiconductor chip. A solid-state imaging device comprising: a diffraction grating mounted on the surface of the seal glass. (2) A lead frame consisting of a semiconductor chip having a plurality of photoelectric conversion elements arranged in a matrix on a light-receiving surface, an island portion to which the semiconductor chip is fixed, and a lead portion electrically connected to the semiconductor chip; , a light-transmitting molding resin for molding the semiconductor chip together with the lead frame; and a diffraction grating attached to the surface of the molding resin so as to cover the light-receiving surface of the semiconductor chip. solid-state image sensor. (3) The solid-state image sensor according to claim 1, wherein the mold resin contains an absorbing material that absorbs light with a wavelength longer than a specific wavelength.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990069531U JPH0428454U (en) | 1990-06-28 | 1990-06-28 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990069531U JPH0428454U (en) | 1990-06-28 | 1990-06-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0428454U true JPH0428454U (en) | 1992-03-06 |
Family
ID=31604915
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1990069531U Pending JPH0428454U (en) | 1990-06-28 | 1990-06-28 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0428454U (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6464254A (en) * | 1987-09-03 | 1989-03-10 | Toshiba Corp | Solid-state image sensor and manufacture thereof |
| JPH01173639A (en) * | 1987-12-26 | 1989-07-10 | Sony Corp | Solid-state image sensing device |
| JPH01248673A (en) * | 1988-03-30 | 1989-10-04 | Canon Inc | Image sensor |
| JPH01254912A (en) * | 1988-04-04 | 1989-10-11 | Nippon Hoso Kyokai <Nhk> | Optical low-pass filter |
-
1990
- 1990-06-28 JP JP1990069531U patent/JPH0428454U/ja active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6464254A (en) * | 1987-09-03 | 1989-03-10 | Toshiba Corp | Solid-state image sensor and manufacture thereof |
| JPH01173639A (en) * | 1987-12-26 | 1989-07-10 | Sony Corp | Solid-state image sensing device |
| JPH01248673A (en) * | 1988-03-30 | 1989-10-04 | Canon Inc | Image sensor |
| JPH01254912A (en) * | 1988-04-04 | 1989-10-11 | Nippon Hoso Kyokai <Nhk> | Optical low-pass filter |
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