JPH01173639A - Solid-state image sensing device - Google Patents
Solid-state image sensing deviceInfo
- Publication number
- JPH01173639A JPH01173639A JP62330577A JP33057787A JPH01173639A JP H01173639 A JPH01173639 A JP H01173639A JP 62330577 A JP62330577 A JP 62330577A JP 33057787 A JP33057787 A JP 33057787A JP H01173639 A JPH01173639 A JP H01173639A
- Authority
- JP
- Japan
- Prior art keywords
- package
- thermal expansion
- ccd imager
- glass
- imager chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011521 glass Substances 0.000 claims abstract description 24
- 239000005394 sealing glass Substances 0.000 claims abstract description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000002241 glass-ceramic Substances 0.000 claims abstract description 8
- 238000003384 imaging method Methods 0.000 claims description 11
- 239000002245 particle Substances 0.000 abstract description 6
- 238000007789 sealing Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract 1
- 230000005260 alpha ray Effects 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241000519995 Stachys sylvatica Species 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
この発明は、ＣＣＤイメージャーチップを用いた固体撮
像素子に関し、特にパッケージ材料に係るものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a solid-state imaging device using a CCD imager chip, and particularly to a package material.
［発明の概要＝
この発明は、ＣＣＤイメージャーチップを、ガラスセラ
ミックからなるパッケージに載置すると共に、該パッケ
ージにシールガラスを接着してなる固体撮像装置におい
て、
シールガラスを高純度石英ガラスで形成し、前記パッケ
ージの熱膨張率を、ＣＣＤイメージャーチップの熱膨張
率と前記シールガラスの熱膨張率との中間の値にしたこ
とにより、
ＣＣＤイメージャーチップに入射するα線の粒子数を大
幅に低減し、画像に与える悪影響を防止したものである
。[Summary of the Invention = This invention provides a solid-state imaging device in which a CCD imager chip is placed in a package made of glass ceramic, and a sealing glass is bonded to the package, in which the sealing glass is made of high-purity quartz glass. By setting the thermal expansion coefficient of the package to an intermediate value between the thermal expansion coefficient of the CCD imager chip and the thermal expansion coefficient of the seal glass, the number of alpha particles incident on the CCD imager chip can be greatly reduced. This reduces the amount of noise and prevents negative effects on images.
［従来の技術］
従来、この種の固体撮像装置としては、アルミナ製のセ
ラミックパッケージ内にＣＣＤイメージャーチップを載
置し、さらに、ケイ酸塩ガラスよりなるシールガラスを
もって前記チップを封入した構造のものがある。[Prior Art] Conventionally, this type of solid-state imaging device has a structure in which a CCD imager chip is placed in a ceramic package made of alumina, and the chip is further enclosed with a seal glass made of silicate glass. There is something.
［発明が解決しようとする問題点］
しかしながら、このような従来例にあっては、以下に示
すような問題点を有している。[Problems to be Solved by the Invention] However, such conventional examples have the following problems.
即ち、シールガラスに含まれるα線放出核に起因してα
線が、ＣＣＤイメージヤ−チップの受光部分、垂直・水
平転送レジスタに入射することによって、正孔・電子対
が誘起され、これが信号源となり瞬間的に画像に輝点や
白線を生じさせる問題点がある。In other words, α due to α-ray emitting nuclei contained in the seal glass
When the line enters the light-receiving part of the CCD imager chip and the vertical and horizontal transfer registers, hole-electron pairs are induced, which becomes a signal source and instantly causes bright spots and white lines on the image. There is.
また、α線が入射することにより、ＣＣＤイメージヤ−
チップ側に永久損傷が発生し、例えば暗信号時に、微小
で不安定な白点が生じる等の問題点がある。In addition, due to the incidence of alpha rays, the CCD imager
There is a problem that permanent damage occurs on the chip side and, for example, minute and unstable white spots appear during dark signals.
そこで、このような問題点を解消するためにα線放出核
の少ない高純度石英ガラスでなるシールガラスを用いた
場合、パッケージを形成するアルミナの熱膨張率７ ｘ
１０−’／”Ｃに対して高純度石英ガラスの熱膨張率
が５０ｘｌ（Ｉ’／’Ｃと、その差が大き過ぎるため、
これらを組合わせた場合にシールガラスに割れ等の損傷
が生ずる問題点があり、高純度石英ガラスをシールガラ
スとして使用出来ないものであった。Therefore, in order to solve this problem, when sealing glass made of high-purity quartz glass with few α-ray emitting nuclei is used, the thermal expansion coefficient of alumina forming the package is 7 x
The thermal expansion coefficient of high-purity quartz glass is 50xl (I'/'C, and the difference is too large for 10-'/'C, so
When these are combined, there is a problem that damage such as cracks occurs to the seal glass, and high purity quartz glass cannot be used as the seal glass.
本発明は、このような従来の問題点に着目して創案され
たものであって、ＣＣＤイメージヤ−チップに入射する
α線の粒子数を大幅に低減した固体撮像装置を得んとす
るものである。The present invention has been devised by focusing on these conventional problems, and aims to provide a solid-state imaging device in which the number of α-ray particles incident on a CCD imager chip is significantly reduced. It is.
［問題点を解決するための手段］
そこで、本発明は、ＣＣＤイメージヤ−チップをガラス
セラミックからなるパッケージに載置すると共に、該パ
ッケージに高純度石英ガラスよりなるシールガラスを接
着し、前記パッケージの熱膨張率が、前記ＣＣＤイメー
ジヤ−チップの熱膨張率と前記シールガラスの熱膨張率
との中間の値であることを、その構成としている。[Means for Solving the Problems] Therefore, the present invention includes mounting a CCD imager chip in a package made of glass ceramic, bonding a sealing glass made of high-purity quartz glass to the package, and attaching a seal glass made of high purity quartz glass to the package. The thermal expansion coefficient of the CCD imager chip is an intermediate value between the thermal expansion coefficient of the CCD imager chip and the thermal expansion coefficient of the seal glass.
［作用コ
パッケージは、ＣＣＤイメージヤ−チップと高純度石英
ガラスでなるシールガラスの夫々の熱膨張率の中間の値
をとる熱膨張率に設定されているため、ＣＣＤイメージ
ヤ−チップ及びシールガラスの熱膨張に伴う不均衡を緩
和し、シールガラスに割れ等の損傷が生じるのを防止す
る。そのため、シールガラスに高純度石英ガラスを使用
することが可能となり、ＣＣＤイメージヤ−チップに入
射するα線の粒子数を大幅に減少させる。[The co-package is set to have a thermal expansion coefficient that is intermediate between the coefficients of thermal expansion of the CCD imager chip and the seal glass made of high-purity silica glass. This reduces the imbalance caused by thermal expansion of the glass and prevents damage such as cracks to the seal glass. Therefore, it becomes possible to use high-purity quartz glass for the sealing glass, and the number of α-ray particles incident on the CCD imager chip is greatly reduced.
［実施例］
以下、本発明に係る固体撮像装置の詳細を図面に示す実
施例に基づいて説明する。[Example] Hereinafter, details of a solid-state imaging device according to the present invention will be described based on an example shown in the drawings.
第１図中、１は固体撮像装置を示しており、この固体撮
像装置ａは、パッケージｌと、ＣＣＤイメージヤ−チッ
プ２と、該パッケージ１を封止するシールガラス３とか
ら大略構成されている。In FIG. 1, 1 indicates a solid-state imaging device, and this solid-state imaging device a is roughly composed of a package 1, a CCD imager chip 2, and a sealing glass 3 for sealing the package 1. There is.
前記パッケージｌは、硼ケイ酸アルカリ土類ガラスとア
ルミナとで構成されるガラスセラミックで形成されてい
る。このパッケージ１は、−側表面の中央にチップ収容
凹部１ａを形成すると共に、シールガラス３を装着する
装着段部ｔｂと該チップ収容凹部１ａの開口周縁に形成
した構造となっており、所定の電極４を備えて構成され
ている。The package 1 is made of glass ceramic made of borosilicate alkaline earth glass and alumina. This package 1 has a structure in which a chip accommodating recess 1a is formed in the center of the negative side surface, and a mounting step tb for mounting the seal glass 3 is formed at the opening periphery of the chip accommodating recess 1a. It is configured to include an electrode 4.
なお、パッケージ１を形成するガラスセラミックは、８
００℃〜８５０℃の低温焼成が可能であり、電極４を備
えて同時形成することが出来るため、低コスト化を可能
としている。また、ガラスセラミックの膨張率は、３０
Ｘ １０−’／”Ｃ以下であり、硼ケイ酸アルカリ土
類ガラスとアルミナの混合比を変化させることにより、
膨張率を２０×１０−’／’Ｃまで低くすることができ
る。Note that the glass ceramic forming the package 1 is 8
Low-temperature firing of 00° C. to 850° C. is possible, and the electrode 4 can be formed at the same time, making it possible to reduce costs. In addition, the expansion coefficient of glass ceramic is 30
X 10-'/''C or less, and by changing the mixing ratio of borosilicate alkaline earth glass and alumina,
The expansion coefficient can be as low as 20x10-'/'C.
また、ＣＣＤイメージヤ−チップ２を形成するシリコン
の膨張率は、４ Ｘ １０−’／”Ｃであり、前記パッ
ケージｌの膨張率２０〜３０ｘｌＯ−’／’Ｃは、当該
ＣＣＤイメージヤ−チップ２の４０Ｘ１０−’／℃とシ
ールガラス３の５ ｘ ｌ Ｏ−’／℃の中間の値をと
る。即ち、パッケージ１がＣＣＤイメージヤ−チップ２
とシールガラス３との膨張変化を緩和する作用を有して
いる。Further, the expansion coefficient of silicon forming the CCD imager chip 2 is 4 x 10-'/'C, and the expansion coefficient of the package 1 is 20 to 30 x lO-'/'C. The value is between 40 x 10-'/°C for the seal glass 3 and 5 x l O-'/°C for the seal glass 3. That is, the package 1 is the CCD imager chip 2.
It has the effect of mitigating expansion changes between the seal glass 3 and the seal glass 3.
なお、図中５はオンチップカラーフィルタである。Note that 5 in the figure is an on-chip color filter.
このように、ソールガラス３に高純度石英ガラスを用い
ることを可能としたことにより、シールガラス３からＣ
ＣＤイメージヤ−チップ２へと入射するα線の数を、従
来の硼ケイ酸アルカリ土類ガラスでシールガラスを形成
したものに比してｌ／１０〜１／１００に減少させるこ
とが出来る。In this way, by making it possible to use high-purity quartz glass for the sole glass 3, carbon can be removed from the seal glass 3.
The number of alpha rays incident on the CD imager chip 2 can be reduced to 1/10 to 1/100 compared to a seal glass made of conventional borosilicate alkaline earth glass.
以上、実施例について説明したが、この他に各種の設計
変更が可能である。Although the embodiments have been described above, various other design changes are possible.
上記実施例にあっては、パッケージをガラスセラミック
で形成したが、これに限らず、熱膨張率が、ＣＣＤイメ
ージヤ−チップを形成するシリコンの熱膨張率と、高純
度石英ガラスの熱膨張率との中間の値をとるものであれ
ば他の材料を用いてもよい。In the above embodiment, the package is made of glass ceramic, but the thermal expansion coefficient is not limited to this, and the thermal expansion coefficient is the same as that of silicon forming the CCD imager chip and that of high-purity quartz glass. Other materials may be used as long as they take a value intermediate between .
「発明の効果］
以上の説明から明らかなように、本発明に係る固体撮像
装置にあっては、パッケージの熱膨張率を、ＣＣＤイメ
ージヤ−チップの熱膨張率と、高純度石英ガラスでなる
シールガラスの熱膨張率との中間の値であるようにした
ことにより、シールガラスとＣＣＤイメージヤ−チップ
の熱膨張に伴う変形較差をパッケージで緩和し、シール
ガラスの割れ等の損傷及びＣＣＤイメージヤ−チップ側
の配線接続部等の破損を確実に防止出来、しかもＣＣＤ
イメージヤ−チップへ入射するα線の粒子数を大幅に低
減して画像の安定性並びに信頼性を向上する効果がある
。"Effects of the Invention" As is clear from the above description, in the solid-state imaging device according to the present invention, the thermal expansion coefficient of the package is equal to the thermal expansion coefficient of the CCD imager chip and the package made of high-purity quartz glass. By setting the coefficient of thermal expansion to an intermediate value between that of the sealing glass, the package alleviates the difference in deformation caused by thermal expansion between the sealing glass and the CCD imager chip, and prevents damage such as cracks in the sealing glass and CCD image. It is possible to reliably prevent damage to the wiring connections on the side of the ear chip, and also
This has the effect of significantly reducing the number of alpha ray particles incident on the imager chip and improving image stability and reliability.
第１図はこの発明に係る固体撮像装置の実施例を示す断
面図である。
ａ・・・固体撮像装置、ｌ・・・パッケージ、２・・・
ＣＣＤイメージヤ−チップ、３・・・シールガラス。FIG. 1 is a sectional view showing an embodiment of a solid-state imaging device according to the present invention. a...Solid-state imaging device, l...Package, 2...
CCD imager chip, 3... seal glass.
Claims (1)
るパッケージに載置すると共に、該パッケージに高純度
石英ガラスよりなるシールガラスを接着し、前記パッケ
ージの熱膨張率が、前記ＣＣＤイメージャーチップの熱
膨張率と前記シールガラスの熱膨張率との中間の値であ
ることを特徴とする固体撮像装置。A CCD imager chip is placed in a package made of glass ceramic, and a sealing glass made of high-purity quartz glass is adhered to the package, so that the thermal expansion coefficient of the package is equal to the thermal expansion coefficient of the CCD imager chip and the A solid-state imaging device characterized in that the coefficient of thermal expansion is intermediate between that of seal glass.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62330577A JP2666310B2 (en) | 1987-12-26 | 1987-12-26 | Solid-state imaging device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62330577A JP2666310B2 (en) | 1987-12-26 | 1987-12-26 | Solid-state imaging device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01173639A true JPH01173639A (en) | 1989-07-10 |
| JP2666310B2 JP2666310B2 (en) | 1997-10-22 |
Family
ID=18234208
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62330577A Expired - Lifetime JP2666310B2 (en) | 1987-12-26 | 1987-12-26 | Solid-state imaging device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2666310B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0428454U (en) * | 1990-06-28 | 1992-03-06 | ||
| JPH05279074A (en) * | 1992-01-08 | 1993-10-26 | Toshiba Glass Co Ltd | Window glass for solid-state image pickup element package |
| JPH0697304A (en) * | 1992-03-05 | 1994-04-08 | Toshiba Glass Co Ltd | Window glass for ep-rom package |
| JPH0725640A (en) * | 1993-07-09 | 1995-01-27 | Asahi Glass Co Ltd | Cover glass |
| US5616949A (en) * | 1993-04-09 | 1997-04-01 | Kabushiki Kaisha Toshiba | Solid-state image sensing device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52156457U (en) * | 1977-05-11 | 1977-11-28 | ||
| JPS56138370A (en) * | 1980-03-31 | 1981-10-28 | Toshiba Corp | Sealing method for solidstate image sensor |
-
1987
- 1987-12-26 JP JP62330577A patent/JP2666310B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52156457U (en) * | 1977-05-11 | 1977-11-28 | ||
| JPS56138370A (en) * | 1980-03-31 | 1981-10-28 | Toshiba Corp | Sealing method for solidstate image sensor |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0428454U (en) * | 1990-06-28 | 1992-03-06 | ||
| JPH05279074A (en) * | 1992-01-08 | 1993-10-26 | Toshiba Glass Co Ltd | Window glass for solid-state image pickup element package |
| JPH0697304A (en) * | 1992-03-05 | 1994-04-08 | Toshiba Glass Co Ltd | Window glass for ep-rom package |
| JP2562803B2 (en) * | 1992-03-05 | 1996-12-11 | 東芝硝子株式会社 | Window glass for EP-ROM package |
| US5616949A (en) * | 1993-04-09 | 1997-04-01 | Kabushiki Kaisha Toshiba | Solid-state image sensing device |
| JPH0725640A (en) * | 1993-07-09 | 1995-01-27 | Asahi Glass Co Ltd | Cover glass |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2666310B2 (en) | 1997-10-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term | ||
| FPAY | Renewal fee payment (event date is renewal date of database) |
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