JPS63186469A - Semiconductor device having light transmission window - Google Patents
Semiconductor device having light transmission windowInfo
- Publication number
- JPS63186469A JPS63186469A JP62019011A JP1901187A JPS63186469A JP S63186469 A JPS63186469 A JP S63186469A JP 62019011 A JP62019011 A JP 62019011A JP 1901187 A JP1901187 A JP 1901187A JP S63186469 A JPS63186469 A JP S63186469A
- Authority
- JP
- Japan
- Prior art keywords
- light
- light transmitting
- light transmission
- window
- light receiving
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- 230000005540 biological transmission Effects 0.000 title abstract description 14
- 230000002093 peripheral effect Effects 0.000 claims abstract description 18
- 229920005989 resin Polymers 0.000 claims abstract description 12
- 239000011347 resin Substances 0.000 claims abstract description 12
- 239000000428 dust Substances 0.000 abstract description 12
- 231100000241 scar Toxicity 0.000 abstract description 7
- 208000032544 Cicatrix Diseases 0.000 abstract description 6
- 230000037387 scars Effects 0.000 abstract description 6
- 239000000463 material Substances 0.000 description 10
- 238000000465 moulding Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 229920002379 silicone rubber Polymers 0.000 description 3
- 239000004945 silicone rubber Substances 0.000 description 3
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、光透過窓を有する半導体装置に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device having a light-transmitting window.
（従来の技術〕
従来例でのこの種の光透過窓を有する半導体装置の概要
構成を第３図に示し、また、同上装置の一例による製造
プロセスを第４図に示す。(Prior Art) FIG. 3 shows a schematic configuration of a conventional semiconductor device having a light transmitting window of this kind, and FIG. 4 shows a manufacturing process of an example of the above device.
こ〜で、第３図（ａ）は同上従来例装置を示す平面図、
同図（ｂ）および（ｃ）はその縦断面図および横断面図
であり、第４図（ａ）ないしくｆ）は同上装置の製造プ
ロセスを工程順に表わす模式的に示したそれぞれ断面説
明図である。Here, FIG. 3(a) is a plan view showing the conventional example device as above;
4(b) and 4(c) are a vertical cross-sectional view and a cross-sectional view thereof, and FIGS. 4(a) to 4(f) are cross-sectional explanatory views schematically showing the manufacturing process of the above device in the order of steps. It is.
すなわち、まず、これらの第３図（ａ） 、 （ｂ）
、 （ｃ）に示す従来例による装置構成おいて、符号１
は二次元イメージセンサなどの光検出素子を高集積化し
た半導体チップ、２は同上チップ１の各光検出素子を集
積しである受光部、３は同上チップ１面の各ポンディン
グパッド、４は同上チップ１を搭載するグイポンド用の
リードフレーム、５はそれぞれにそのリードフレームか
らなる各足部、６は前記各ポンディングパー２ド３とリ
ードフレーム４の各該当部分とを接続するそれぞれに金
あるいは銅合金からなるポンディングワイヤである。That is, first of all, these figures 3 (a) and (b)
, In the device configuration according to the conventional example shown in (c), reference numeral 1
2 is a semiconductor chip with highly integrated photodetection elements such as a two-dimensional image sensor, 2 is a light receiving section that integrates each photodetection element of chip 1, 3 is each bonding pad on the surface of the chip 1, and 4 is a A lead frame for the Gui-pond on which the same chip 1 is mounted; 5 is each leg made of the lead frame; 6 is a gold plate connecting each of the bonding pads 2 and 3 to each corresponding part of the lead frame 4; Alternatively, it is a bonding wire made of copper alloy.
また、７は前記受光部２の周囲を囲んで、スクリーン印
刷などにより形成されたシリコンゴムなどの壁部、２１
はこの壁部７を介して受光部２を覆う光透過窓部として
の適当な厚さの透明ガラス板などの光透過部材であり、
さらに、９は前記各足部５．ならびに少なくとも光透過
窓部を外部に残してこれらを一体的にモールドするモー
ルド樹脂である。Further, reference numeral 7 includes a wall portion 21 surrounding the light receiving portion 2 and made of silicone rubber formed by screen printing or the like.
is a light transmitting member such as a transparent glass plate having an appropriate thickness as a light transmitting window portion that covers the light receiving portion 2 through this wall portion 7;
Further, reference numeral 9 indicates each leg portion 5. and a molding resin for integrally molding these parts while leaving at least the light transmitting window portion outside.
次に、第４図（ａ）ないしくｆ）に示す製造プロセスに
おいて、まず、ウェハ状態の半導体チー、プｌでの受光
部２の周囲には、スクリーン印刷などを用い、シリコン
ゴムなどによって壁部７を一連に形成する（同図（ａ）
）、この壁部７の断面寸法は、通常の場合、巾が数１０
ＪＬｍ〜数１００７ｔ■程度、高さが５ＪＬ１１〜５０
用ｍ程度である。Next, in the manufacturing process shown in FIGS. 4(a) to 4(f), first, the area around the light receiving part 2 of the semiconductor chip in the wafer state is covered with a wall using silicone rubber or the like using screen printing or the like. The part 7 is formed in series (FIG. (a)
), the cross-sectional dimension of this wall portion 7 is usually several tens of thousands in width.
JLm~several 1007t■, height 5JL11~50
It is about m.
ついで、スクライブを行ない、半導体チップｌを切り出
して（同図（ｂ））、リードフレーム４上の所定位置に
グイポンドすると共に（同図（Ｃ））、半導体チップ１
の各ポンディングパッド３とリードフレーム４の各該当
部分との間を、それぞれポンディングワイヤ６によりワ
イヤポンディングした後に（同図（ｄ））、壁部７上に
光透過部材２１を密着させて受光部２を覆う（同図（ｅ
））、 Ｌかしてご覧でも、通常の場合、リードフレー
ム４には、厚さ１００ 角層〜２００ル層程度のものを
用い、光透過部材２１としては、光学的に研摩された厚
さｉ］程度のものを用いる。Next, the semiconductor chip 1 is cut out by scribing ((b) in the same figure), and is placed in a predetermined position on the lead frame 4 ((c) in the same figure).
After wire bonding is performed between each bonding pad 3 and each corresponding part of the lead frame 4 using a bonding wire 6 (FIG. 1(d)), a light transmitting member 21 is tightly attached to the wall portion 7. to cover the light receiving part 2 ((e)
)), As you can see, in normal cases, the lead frame 4 is made of a material with a thickness of about 100 to 200 layers, and the light transmitting member 21 is made of an optically polished thickness. i] grade is used.
そして最後に、リードフレーム４の各足部５を外部に残
した状態で、これらをモールド樹脂９によって一体的に
モールドし、かつ各足部５を折り曲げ加工するなどの各
工程を経て、所期の光透過窓を有する半導体装置を完成
する（同図（ｆ））のである。Finally, with each leg 5 of the lead frame 4 left outside, these are integrally molded with mold resin 9, and through various steps such as bending each leg 5, the desired shape is formed. A semiconductor device having a light transmitting window is completed (FIG. 6(f)).
なお、前記半導体チップ１をＶＴＲカメラ用のイメージ
センサに適用する場合、その光検出部である受光部２に
は、画素寸法１ＯＩＬ量角程度の光検出素子が、お覧よ
そ２０万〜４０万画素分に亘って微細に集積されている
のが普通である。In addition, when the semiconductor chip 1 is applied to an image sensor for a VTR camera, the light receiving section 2, which is the light detecting section, has a photodetecting element with a pixel size of about 1 OIL amount angle, which is about 200,000 to 400,000 yen. Usually, they are minutely integrated over a pixel.
前記したように、従来例による光透過窓を有する半導体
装置においては、受光部２に微細な光検出素子が数多く
集積されており、この受光部２を覆う光透過部材２１の
裏面にあって、例えば、傷跡が存在したり、あるいは塵
埃などが付着していたりすると、たとえそれらの大きさ
が１０ｇ諺程麻の小さいものであったとしても、壁部７
の厚さによって決まる受光部２と光透過部材２１との間
隔が、こ＼では、数１０１Ｌ膿程度のように極めて小さ
いた。As described above, in the conventional semiconductor device having a light-transmitting window, a large number of fine photodetecting elements are integrated in the light-receiving section 2. For example, if there are scratches or dust attached, even if the size of the scratches is as small as 10g, the wall 7
In this case, the distance between the light receiving part 2 and the light transmitting member 21, which is determined by the thickness of the light receiving part 2, is extremely small, on the order of several 101 liters.
めに、これらの傷跡、塵埃などが、受光部２の一部に影
をおとして画素を覆うことになり、結果的に、これが撮
像画面に黒い点、もしくは黒い傷として表わされるもの
で、イメージセンサとしての歩留りを著るしく低下させ
ると云う問題点があった。Therefore, these scratches, dust, etc. cast shadows on a part of the light-receiving section 2 and cover the pixels.As a result, this appears as black dots or black scratches on the image capture screen, and the image is distorted. There was a problem in that the yield rate as a sensor was significantly reduced.
この発明は、従来のこのような問題点を解消するために
なされたものであって、その目的とするところは、受光
部を覆う光透過部材の裏面での。This invention has been made to solve these conventional problems, and its purpose is to solve the problems on the back side of the light transmitting member that covers the light receiving section.
傷跡の存在、塵埃などの付着による歩留り低下を抑制し
た。この種の光透過窓を有する半導体装置を提供するこ
とである。Reduced yield loss due to the presence of scars and adhesion of dust, etc. An object of the present invention is to provide a semiconductor device having a light transmitting window of this type.
前記目的を達成するために、この発明に係る光透過窓を
有する半導体装置は、光透過部材にあって、光透過窓部
から突出する周壁部を設け、この周壁部を壁部に突当て
一樹脂モールドし、受光部と光透過窓部との間に、充分
な間隔を与えた構成にしたものである。In order to achieve the above object, a semiconductor device having a light-transmitting window according to the present invention includes a light-transmitting member that includes a peripheral wall portion that protrudes from the light-transmitting window portion, and abuts the peripheral wall portion against a wall portion. The light receiving part and the light transmitting window part are molded with resin and are configured to have a sufficient distance between them.
すなわち、この発明においては、光透過窓部から突出す
る周壁部を設けた光透過部材を用い、受先部と光透過窓
部との間に、充分な間隔を与えた構成にしたから、光透
過窓部の内面に傷跡が存在したり、塵埃などが付着した
りしていても、これらの傷跡、塵埃などの影による受光
部への影響を格段に少なくし得る。That is, in this invention, a light transmitting member having a peripheral wall protruding from a light transmitting window is used, and a sufficient distance is provided between the receiving part and the light transmitting window. Even if there are scars or dust attached to the inner surface of the transmission window, the influence of the shadows of these scars, dust, etc. on the light receiving section can be significantly reduced.
以下、この発明に係る光透過窓を有する半導体装置の各
別の実施例につき、第１図および第２図を参照して詳細
に説明する。Hereinafter, different embodiments of a semiconductor device having a light transmitting window according to the present invention will be described in detail with reference to FIGS. 1 and 2.
これらの第１図および第２図に示す各実施例構成におい
て、前記第３図従来例構成と同一符号は同一または相当
部分を表わしている。In each of the embodiments shown in FIGS. 1 and 2, the same reference numerals as in the conventional structure shown in FIG. 3 represent the same or corresponding parts.
第１図はこの発明の一実施例による装置構成の概要を示
しており、同図（ａ）は同上一実施例装置を示す平面図
、同図（ｂ）および（Ｃ）はその縦断面図および横断面
図である。FIG. 1 shows an outline of the configuration of a device according to an embodiment of the present invention, and FIG. 1(a) is a plan view showing the device according to the embodiment, and FIG. and a cross-sectional view.
すなわち、この第１図実施例装置においても、符号１は
二次元イメージセンサなどの各光検出素子、つまりこ−
では、画素としての微細な各光検出素子を高集端化した
半導体チップ、２は同上チップ１の各光検出素子を集積
しである受光部、３は同上チップ１面の各ポンディング
パッド、４は同上チップ１を搭載するグイポンド用のリ
ードフレーム、５はそれぞれにそのリードフレームから
なる各足部、６は前記各ポンディングパッド３とリード
フレーム４の各該当部分とを接続するそれぞれに金ある
いは銅合金からなるポンディングワイヤである。That is, in the apparatus of the embodiment shown in FIG.
Here, 2 is a semiconductor chip in which fine photodetecting elements as pixels are highly concentrated, 2 is a light receiving part in which each of the photodetecting elements of chip 1 is integrated, 3 is each bonding pad on one side of the same chip, Reference numeral 4 denotes a lead frame for the Gui-pond on which the chip 1 is mounted, 5 indicates each leg of the lead frame, and 6 indicates a gold plate connecting each of the bonding pads 3 and corresponding parts of the lead frame 4. Alternatively, it is a bonding wire made of copper alloy.
また、７は前記受光部２の周囲を囲んで、スクリーン印
刷などにより形成され、前記と同様な断面寸法としたシ
リコンゴムなどの壁部、８はこの壁部７を介して受光部
２を覆う透明ガラス板などの光透過部材であって、光透
過窓部８ａと、その周縁部下面から下方に突出して延長
された周壁部８ｂとを有し、これらの両部８ａ、８ｂを
一体成形によって構成したものであり、さらに、８は前
記各足部５、ならびに少なくとも光透過窓部８ａを外部
に残してこれらを一体的にモールドするモールド樹脂で
ある。Further, 7 is a wall made of silicone rubber that surrounds the light receiving part 2 and is formed by screen printing or the like and has the same cross-sectional dimensions as above, and 8 covers the light receiving part 2 through this wall part 7. It is a light transmitting member such as a transparent glass plate, and has a light transmitting window portion 8a and a peripheral wall portion 8b extending downwardly from the lower surface of the periphery thereof, and both of these portions 8a and 8b are integrally molded. Further, reference numeral 8 denotes a molding resin for integrally molding each leg portion 5 and at least the light transmitting window portion 8a while leaving them outside.
そして、この第１図実施例構成にあっても、モールド時
に用いる金型を光透過部材８の形態に合わせて変更する
必要のあるほかは、前記第４図従来例の場合と全く同一
の工程により製造し得るのである。Even in the configuration of the embodiment shown in FIG. 1, the process is exactly the same as that of the conventional example shown in FIG. It can be manufactured by
従って、この第１図実施例構成の場合には、光透過窓部
８ａと周壁部８ｂとの一体構成からなる光透過部材８を
用い、その周壁部８ｂの突出端を壁部７に突当て一樹脂
モールドすることによって、同光透過部材８の裏面と受
光部２の表面との間隔を、充分に大きくとり得るもので
、このために、例えば、光透過部材８の裏面に傷跡が存
在したり、あるいは塵埃などが付着したりしていたとし
ても、その影が受光部２の面上、ひいては、各画素とし
ての個々の光検出素子の面上に焦点を結んで、その撮像
に影響を与える慣れが解消、もしくは格段に少なくされ
、あるいは目立ち難くなって、これらが黒い点、黒い傷
などで表現されず、イメージセンサとしての歩留り向上
に大きく寄与し得るのである。Therefore, in the case of the configuration of the embodiment shown in FIG. By molding the light-transmitting member 8 with a resin, the distance between the back surface of the light-transmitting member 8 and the surface of the light-receiving portion 2 can be made sufficiently large. Even if there is dirt or dust attached, the shadow will be focused on the surface of the light receiving section 2, and eventually on the surface of each photodetector as each pixel, affecting the imaging. This eliminates or significantly reduces the habit of giving the image, or makes it less noticeable, and these do not appear as black dots or scratches, which can greatly contribute to improving the yield of image sensors.
つまりこ＼で、−例を挙げると、人間の肉眼にとって、
１０％程度の影は、撮像画面上の狭い範囲内であれば、
これを認識することが困難であることから、想定される
光透過部材８の裏面での傷跡とか塵埃などの大きさに対
して、その影が、撮像信号に関し、 １０％程度以下の
影響になるように、光透過部材８の裏面と受光部２の表
面との間隔を設定すれば良い、すなわち、同間隔の一応
の目安としては、光透過部材８の裏面での傷跡、塵埃な
どの大きさを、１０ルｌ〜２０ル鳳程度に想定する場合
、この間隔を１００ｕＬ■〜５００用■程度に設定すれ
ば足りるもので、実質的には、 １ｍｍ程度以上の間隔
をとるのが望ましい。In other words, - for example, to the human eye,
If a shadow of about 10% is within a narrow range on the imaging screen,
Since it is difficult to recognize this, the shadow will have an effect of about 10% or less on the imaging signal, compared to the size of the assumed scar or dust on the back surface of the light transmitting member 8. It is sufficient to set the distance between the back surface of the light transmitting member 8 and the front surface of the light receiving part 2 as shown in FIG. When the distance is assumed to be approximately 10 to 20 μL, it is sufficient to set this interval to approximately 100 μL to 500 μL, and it is practically desirable to set the distance to approximately 1 mm or more.
また、前記第１図実施例構成においては、光透過窓部８
ａと周壁部８ｂとを一体成形させた構造の光透過部材８
を適用する場合について述べたが、各別に形成したこれ
らの両部８ａ、８ｂを一体的に結合させるようにしても
良く、この別体構造による実施例を第２図に示す、同図
（ａ）は同上他の実施例による光透過部材の縦断面図、
同図（ｂ）はその底面図である。In addition, in the configuration of the embodiment shown in FIG.
A light transmitting member 8 having a structure in which a and a peripheral wall portion 8b are integrally molded.
Although we have described the case in which the two parts 8a and 8b, which are formed separately, may be integrally joined together, an embodiment with this separate structure is shown in FIG. 2 (a). ) is a vertical cross-sectional view of a light transmitting member according to another embodiment of the same as above,
Figure (b) is its bottom view.
すなわち、この第２図実施例装置において、符号１１は
別体構造による光透過部材を示し、ご覧では、透明ガラ
ス板などを用いた光透過窓材１２と、金属、あるいは合
成樹脂などからなるスペーサとしての周壁材１３とを、
接着剤１４などによって一体的に結合させたものである
。That is, in the embodiment device shown in FIG. 2, reference numeral 11 indicates a light-transmitting member having a separate structure, and as shown, a light-transmitting window material 12 made of a transparent glass plate or the like, and a spacer made of metal, synthetic resin, etc. The peripheral wall material 13 as
They are integrally connected using an adhesive 14 or the like.
従って、この第２図実施例装置の場合にも、前記第１図
実施例装置と同様に、光透過窓材１２と周壁材１３とを
一体的に結合させた構成からなる光透過部材１１を用い
、その周壁材１３の突出端を壁部７に突当て〜樹脂モー
ルドすることにより、同党透過部材８の裏面と受光部２
の表面との間隔を、充分に大きくできて、同様な作用、
効果を達成し得るのである。Therefore, in the case of the device according to the embodiment shown in FIG. 2, the light transmitting member 11 is constructed by integrally combining the light transmitting window material 12 and the surrounding wall material 13, as in the device according to the embodiment shown in FIG. By abutting the protruding end of the peripheral wall material 13 against the wall portion 7 and molding it with resin, the back surface of the transparent member 8 and the light receiving portion 2
The same effect can be achieved by making the distance between the surface and the surface sufficiently large.
effect can be achieved.
また、この場合、光透過部材１１を構成する周壁材１３
の内周面には、内部での入射光の乱反射を避けるために
、黒色塗装を施すなどの非反射加工をなすのが望ましく
、さらにまた、モールド樹脂によるパッケージで問題と
なる耐湿岬、つまりこへでは、前記第１図実施例におけ
るところの、光透過部材８の周壁部８ｂとモールド樹脂
９との接触面に沿う水分の侵入を阻止し、かつ併せて、
同接触面での密着性を高める目的で、この第２図実施例
の場合にあっては、周壁材１３の外周面に対し、これを
粗面仕上げにしたり、あるいは溝１３ａ仕上げにすると
か、もしくは密着コーティング仕上げにするなどの手段
を講するのが好ましい。Further, in this case, the surrounding wall material 13 that constitutes the light transmitting member 11
In order to avoid diffuse reflection of incident light inside, it is desirable to apply a non-reflective treatment such as black coating to the inner circumferential surface of the device.Furthermore, it is desirable to apply a non-reflective treatment such as applying black paint to the inner circumferential surface of the package. In the example shown in FIG.
In order to improve the adhesion on the contact surface, in the case of the embodiment shown in FIG. 2, the outer peripheral surface of the peripheral wall material 13 is given a rough surface finish, or the groove 13a is finished. Alternatively, it is preferable to take measures such as applying an adhesive coating finish.
以上詳述したようにこの発明によれば、半導体チップ上
に、微細な光検出素子を数多く集積して受光部を形成さ
せると共に、壁部を介してこの受光部を覆う光透過部材
を設け、かつ少なくともこれらの周囲を樹脂モールドし
た光透過窓を有する半導体装置において、光透過窓部か
ら突出する周壁部を設けた光透過部材を用い、受光部と
光透過窓部との間に、充分な間隔を与えた構成にしたか
ら、光透過窓部の内面に傷跡が存在したり、塵埃などが
付着したりしていても、これらの傷跡、塵埃などの影に
よる受光部への影響を解消、もしくは格段に少なくでき
て、その欠陥を見え難くし得られ、これによってイメー
ジセンサとしての歩留りを向上でき、しかも構造的にも
比較的簡単で容易に実施可能であるなどの優れた特長を
有するものである。As detailed above, according to the present invention, a light receiving section is formed by integrating a large number of fine photodetecting elements on a semiconductor chip, and a light transmitting member is provided to cover the light receiving section through a wall. In a semiconductor device having a light transmitting window whose periphery is resin-molded, a light transmitting member having a peripheral wall protruding from the light transmitting window is used, and a sufficient space is provided between the light receiving part and the light transmitting window. Because of the spaced configuration, even if there are scratches or dust attached to the inner surface of the light transmitting window, the influence of shadows from these scratches and dust on the light receiving area can be eliminated. Or, it has excellent features such as being able to significantly reduce the number of defects, making the defects difficult to see, improving the yield of image sensors, and being relatively simple in structure and easy to implement. It is.
第１図はこの発明に係る光透過窓を有する半導体装置の
一実施例構成を示し、同図（ａ）は同上一実施例装置を
示す平面図、同図（ｂ）および（Ｃ）はその縦断面図お
よび横断面図であり、第２図は同上能の実施例による光
透過部材の構成を示し、同図（ａ）は同上光透過部材の
縦断面図、同図（ｂ）はその底面図である。
また、第３図は従来例による光透過窓を有する半導体装
置の構成を示し、同図（ａ）は同上従来例装置を示す平
面図、同図（ｂ）および（ｃ）はその縦断面図および横
断面図であり、第４図（ａ）ないしくｆ）は同上装置の
製造プロセスを工程順に表わす模式的に示したそれぞれ
断面説明図である。
１・・・・半導体チップ、２・・・・受光部、３・・・
・ボンデインクハツト、４・・・・リードフレーム、５
・・・・リードフレームの足部、６・・・・ポンディン
グワイヤ、７・・・・壁部、８および１１・・・・光透
過部材、８ａ・・・・光透過窓部、８ｂ・・・・周壁部
、９・・・・モールド樹脂、１２・・・・光透過窓材、
１３・・・・周壁材、１３ａ・・・・溝、１４・・・・
接着剤。
代理人 大 岩 増 雄
第２図
（ａ）
１３：用壓耳
１３Ｑｒ５鉢
１４ｉ、□４利
（ｂ）
第３図
第４図
手続補正書（自発）
昭和 ６髭、艮、１」３日
−」FIG. 1 shows the structure of an embodiment of a semiconductor device having a light transmitting window according to the present invention, FIG. 1(a) is a plan view showing the same embodiment, and FIG. FIG. 2 shows the configuration of a light transmitting member according to an embodiment of the same, FIG. It is a bottom view. FIG. 3 shows the structure of a semiconductor device having a light transmission window according to a conventional example, and FIG. 3(a) is a plan view of the conventional device, and FIG. 3(b) and FIG. FIGS. 4(a) to 4(f) are cross-sectional explanatory views schematically showing the manufacturing process of the above device in the order of steps. 1... Semiconductor chip, 2... Light receiving section, 3...
・Bonde ink hat, 4...Lead frame, 5
. . . Foot portion of lead frame, 6 . . . Bonding wire, 7 . . . Wall portion, 8 and 11 . . . Light transmission member, 8a . ... Peripheral wall part, 9 ... Mold resin, 12 ... Light transmission window material,
13... Peripheral wall material, 13a... Groove, 14...
glue. Agent Masuo Oiwa Diagram 2 (a) 13: Yotsumi 13Qr5 Pot 14i, □4ri (b) Diagram 3 Diagram 4 Procedural amendment (voluntary) Showa 6 Hige, garb, 1'' 3 days - ”
Claims (4)
積して受光部を形成させると共に、壁部を介してこの受
光部を覆う光透過部材を設け、かつ少なくともこれらの
周囲を樹脂モールドした光透過窓を有する半導体装置に
おいて、前記光透過部材には、光透過窓部から突出する
周壁部を設け、前記壁部にこの周壁部を突当てゝ樹脂モ
ールドし、前記受光部と光透過窓部との間に、充分な間
隔を与えて構成したことを特徴とする光透過窓を有する
半導体装置。(1) A light-receiving section is formed by integrating a large number of fine photodetecting elements on a semiconductor chip, and a light-transmitting member is provided to cover this light-receiving section through a wall, and at least the periphery of these is molded with resin. In a semiconductor device having a light transmitting window, the light transmitting member is provided with a peripheral wall portion protruding from the light transmitting window portion, the peripheral wall portion is abutted against the wall portion and resin molded, and the light receiving portion and the light transmitting window are connected to each other. 1. A semiconductor device having a light transmitting window, characterized in that the window is configured with a sufficient distance between the window and the window.
透過部材を用いることを特徴とする特許請求の範囲第１
項に記載の光透過窓を有する半導体装置。(2) Claim 1, characterized in that a light transmitting member is used in which the light transmitting window portion and the peripheral wall portion are integrally molded.
A semiconductor device having a light transmitting window according to 1.
的に結合した構成の光透過部材を用いることを特徴とす
る特許請求の範囲第１項に記載の光透過窓を有する半導
体装置。(3) A semiconductor having a light transmitting window according to claim 1, which uses a light transmitting member having a structure in which a separately provided light transmitting window portion and a peripheral wall portion are integrally combined. Device.
を高める溝、粗面などを形成したことを特徴とする特許
請求の範囲第１項、第２項、または第３項に記載の光透
過窓を有する半導体装置。(4) A groove, a rough surface, etc. are formed on the peripheral wall of the light transmitting member to improve adhesion to the mold resin, as set forth in claim 1, 2, or 3. A semiconductor device having a light transmitting window.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62019011A JPS63186469A (en) | 1987-01-28 | 1987-01-28 | Semiconductor device having light transmission window |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62019011A JPS63186469A (en) | 1987-01-28 | 1987-01-28 | Semiconductor device having light transmission window |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63186469A true JPS63186469A (en) | 1988-08-02 |
Family
ID=11987559
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62019011A Pending JPS63186469A (en) | 1987-01-28 | 1987-01-28 | Semiconductor device having light transmission window |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63186469A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5127655A (en) * | 1990-07-27 | 1992-07-07 | Sumitomo Rubber Industries, Ltd. | Golf ball |
| WO2002056388A2 (en) * | 2001-01-15 | 2002-07-18 | Stmicroelectronics Sa | Sensor semiconductor package, provided with an insert, and method for making same |
| EP1420458A2 (en) | 2002-11-15 | 2004-05-19 | STMicroelectronics Pte Ltd. | Semiconductor device package and method of manufacture |
| JP2007214186A (en) * | 2006-02-07 | 2007-08-23 | Denso Corp | Mold package and its manufacturing method |
-
1987
- 1987-01-28 JP JP62019011A patent/JPS63186469A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5127655A (en) * | 1990-07-27 | 1992-07-07 | Sumitomo Rubber Industries, Ltd. | Golf ball |
| WO2002056388A2 (en) * | 2001-01-15 | 2002-07-18 | Stmicroelectronics Sa | Sensor semiconductor package, provided with an insert, and method for making same |
| FR2819634A1 (en) * | 2001-01-15 | 2002-07-19 | St Microelectronics Sa | SEMICONDUCTOR PACKAGE WITH SENSOR PROVIDED WITH AN INSERT AND MANUFACTURING METHOD THEREOF |
| WO2002056388A3 (en) * | 2001-01-15 | 2003-01-03 | St Microelectronics Sa | Sensor semiconductor package, provided with an insert, and method for making same |
| EP1420458A2 (en) | 2002-11-15 | 2004-05-19 | STMicroelectronics Pte Ltd. | Semiconductor device package and method of manufacture |
| EP1420458A3 (en) * | 2002-11-15 | 2005-05-04 | STMicroelectronics Pte Ltd. | Semiconductor device package and method of manufacture |
| JP2007214186A (en) * | 2006-02-07 | 2007-08-23 | Denso Corp | Mold package and its manufacturing method |
| JP4513758B2 (en) * | 2006-02-07 | 2010-07-28 | 株式会社デンソー | Mold package and manufacturing method thereof |
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