JPH0371662U - - Google Patents
Info
- Publication number
- JPH0371662U JPH0371662U JP13270789U JP13270789U JPH0371662U JP H0371662 U JPH0371662 U JP H0371662U JP 13270789 U JP13270789 U JP 13270789U JP 13270789 U JP13270789 U JP 13270789U JP H0371662 U JPH0371662 U JP H0371662U
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- light
- semiconductor
- semiconductor integrated
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 11
- 230000004888 barrier function Effects 0.000 claims 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 238000002955 isolation Methods 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
Description
第１図Ａは本考案の半導体集積回路の平面図、
第１図Ｂは、第１図ＡのＸ−Ｘ′線における断面
図、第２図は従来の半導体集積回路の断面図であ
る。
FIG. 1A is a plan view of the semiconductor integrated circuit of the present invention;
FIG. 1B is a sectional view taken along line XX' in FIG. 1A, and FIG. 2 is a sectional view of a conventional semiconductor integrated circuit.
Claims (1)
気信号を処理する半導体素子領域とを一つの半導
体層内に形成した半導体集積回路において、 前記受光領域はシヨツトキーバリアーダイオー
ドにより構成され、このシヨツトキーバリアーダ
イオードのアノード電極は櫛歯あるいは格子状の
アルミニウムよりなることを特徴とした半導体集
積回路。 (2) 前記受光領域以外は、前記カソード電極と
実質的に同一材料の遮光膜が形成されていること
を特徴とした請求項第１項記載の半導体集積回路
。 (3) 一導電型の半導体基板上に形成された逆導
電型のエピタキシヤル層と、 このエピタキシヤル層を複数のアイランドに分
割する一導電型の分離領域と、 このアイランドに形成された半導体素子と、 他のアイランドに形成されたシヨツトキーバリ
アーダイオードとを備え、 前記シヨツトキーバリアーダイオードのアノー
ド電極は、前記半導体素子に形成される電極と実
質的に同一材料の櫛歯あるいは格子状のアルミニ
ウム電極よりなることを特徴とした半導体集積回
路。[Claims for Utility Model Registration] (1) In a semiconductor integrated circuit in which a light-receiving region that converts light into an electrical signal and a semiconductor element region that processes this electrical signal are formed in one semiconductor layer, the light-receiving region is a silicon A semiconductor integrated circuit comprising a Yottoky barrier diode, the anode electrode of which is made of comb-teeth or lattice-shaped aluminum. (2) The semiconductor integrated circuit according to claim 1, wherein a light shielding film made of substantially the same material as the cathode electrode is formed in areas other than the light receiving area. (3) an epitaxial layer of an opposite conductivity type formed on a semiconductor substrate of one conductivity type, an isolation region of one conductivity type that divides this epitaxial layer into a plurality of islands, and a semiconductor element formed on this island. and a shot key barrier diode formed on another island, wherein the anode electrode of the shot key barrier diode is a comb-like or lattice-shaped anode made of substantially the same material as the electrode formed on the semiconductor element. A semiconductor integrated circuit characterized by being made of aluminum electrodes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13270789U JPH0371662U (en) | 1989-11-15 | 1989-11-15 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13270789U JPH0371662U (en) | 1989-11-15 | 1989-11-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0371662U true JPH0371662U (en) | 1991-07-19 |
Family
ID=31680152
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13270789U Pending JPH0371662U (en) | 1989-11-15 | 1989-11-15 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0371662U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000017941A1 (en) * | 1998-09-18 | 2000-03-30 | Mitsubishi Cable Industries, Ltd. | Semiconductor photodetector |
-
1989
- 1989-11-15 JP JP13270789U patent/JPH0371662U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000017941A1 (en) * | 1998-09-18 | 2000-03-30 | Mitsubishi Cable Industries, Ltd. | Semiconductor photodetector |
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