JPS5633855A - Semiconductor device and its manufacture - Google Patents

Semiconductor device and its manufacture

Info

Publication number
JPS5633855A
JPS5633855A JP10909579A JP10909579A JPS5633855A JP S5633855 A JPS5633855 A JP S5633855A JP 10909579 A JP10909579 A JP 10909579A JP 10909579 A JP10909579 A JP 10909579A JP S5633855 A JPS5633855 A JP S5633855A
Authority
JP
Japan
Prior art keywords
layers
metal films
substrate
silicon oxide
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10909579A
Other languages
Japanese (ja)
Inventor
Toshiro Sakamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10909579A priority Critical patent/JPS5633855A/en
Publication of JPS5633855A publication Critical patent/JPS5633855A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To stabilize the semiconductor device electrically, mechanically, electrochemically and thermally by a method wherein the first metal films to be distributed on a semiconductor substrate at the substrate side and the second metal films to be distributed at the opposite side against the substrate interlaying an interlayer insulating film between them are made to have specific structures. CONSTITUTION:A base region 2 and an emitter region 3 are formed in a silicon substrate 1, and a planar surface is covered with a silicon oxide film 4. The first metal films 5 and 6 are formed on the silicon oxide film 4. The metal films 5, 6 are constituted by stacking from the substrate side titanium layers 51, 61, platinum layers 52, 62, gold layers 53, 63, molybdenum layers 54, 64. A silicon oxide film 8 is formed as the interlayer insulating film on the whole surface of this constitution, openings are formed at opening regions 91, 92 and the second metal films 10 and 11 are formed. The metal films 10, 11 are constituted by stacking titanium layers 101, 111, platinum layers 102, 112, gold layers 103, 113.
JP10909579A 1979-08-29 1979-08-29 Semiconductor device and its manufacture Pending JPS5633855A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10909579A JPS5633855A (en) 1979-08-29 1979-08-29 Semiconductor device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10909579A JPS5633855A (en) 1979-08-29 1979-08-29 Semiconductor device and its manufacture

Publications (1)

Publication Number Publication Date
JPS5633855A true JPS5633855A (en) 1981-04-04

Family

ID=14501455

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10909579A Pending JPS5633855A (en) 1979-08-29 1979-08-29 Semiconductor device and its manufacture

Country Status (1)

Country Link
JP (1) JPS5633855A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60160120A (en) * 1984-01-30 1985-08-21 Nec Corp Formation of electrode for semiconductor element
US5031822A (en) * 1989-02-01 1991-07-16 Marconi Electronic Devices Limited Methods of joining components

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60160120A (en) * 1984-01-30 1985-08-21 Nec Corp Formation of electrode for semiconductor element
US5031822A (en) * 1989-02-01 1991-07-16 Marconi Electronic Devices Limited Methods of joining components

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