JPS5633855A - Semiconductor device and its manufacture - Google Patents
Semiconductor device and its manufactureInfo
- Publication number
- JPS5633855A JPS5633855A JP10909579A JP10909579A JPS5633855A JP S5633855 A JPS5633855 A JP S5633855A JP 10909579 A JP10909579 A JP 10909579A JP 10909579 A JP10909579 A JP 10909579A JP S5633855 A JPS5633855 A JP S5633855A
- Authority
- JP
- Japan
- Prior art keywords
- layers
- metal films
- substrate
- silicon oxide
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To stabilize the semiconductor device electrically, mechanically, electrochemically and thermally by a method wherein the first metal films to be distributed on a semiconductor substrate at the substrate side and the second metal films to be distributed at the opposite side against the substrate interlaying an interlayer insulating film between them are made to have specific structures. CONSTITUTION:A base region 2 and an emitter region 3 are formed in a silicon substrate 1, and a planar surface is covered with a silicon oxide film 4. The first metal films 5 and 6 are formed on the silicon oxide film 4. The metal films 5, 6 are constituted by stacking from the substrate side titanium layers 51, 61, platinum layers 52, 62, gold layers 53, 63, molybdenum layers 54, 64. A silicon oxide film 8 is formed as the interlayer insulating film on the whole surface of this constitution, openings are formed at opening regions 91, 92 and the second metal films 10 and 11 are formed. The metal films 10, 11 are constituted by stacking titanium layers 101, 111, platinum layers 102, 112, gold layers 103, 113.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10909579A JPS5633855A (en) | 1979-08-29 | 1979-08-29 | Semiconductor device and its manufacture |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10909579A JPS5633855A (en) | 1979-08-29 | 1979-08-29 | Semiconductor device and its manufacture |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5633855A true JPS5633855A (en) | 1981-04-04 |
Family
ID=14501455
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10909579A Pending JPS5633855A (en) | 1979-08-29 | 1979-08-29 | Semiconductor device and its manufacture |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5633855A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60160120A (en) * | 1984-01-30 | 1985-08-21 | Nec Corp | Formation of electrode for semiconductor element |
US5031822A (en) * | 1989-02-01 | 1991-07-16 | Marconi Electronic Devices Limited | Methods of joining components |
-
1979
- 1979-08-29 JP JP10909579A patent/JPS5633855A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60160120A (en) * | 1984-01-30 | 1985-08-21 | Nec Corp | Formation of electrode for semiconductor element |
US5031822A (en) * | 1989-02-01 | 1991-07-16 | Marconi Electronic Devices Limited | Methods of joining components |
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