JPS6212963U - - Google Patents

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本考案の実施例のメサ型半導体整流装
置の断面図、第２図ＡないしＣは本考案の前記整
流装置の製造工程の要部を示す断面図、第３図は
本考案の他の実施例のメサ型半導体整流装置の断
面図、第４図は従来のメサ型半導体整流装置の断
面図である。 １……メサ型半導体基板、２……平板主電極（
カソード電極）、３……平板主電極（熱緩衝板）
、４……表面保護用絶縁膜、５……流れ止めリン
グ、６……基板主面の外周縁の肩、７……環状の
切欠部、ｄ……平板主電極の露出平面から切欠部
の底面までの深さ、ｄ_１……基板主面から切欠部
の底面までの深さ。 FIG. 1 is a cross-sectional view of a mesa-type semiconductor rectifier according to an embodiment of the present invention, FIGS. 2A to C are cross-sectional views showing the main parts of the manufacturing process of the rectifier according to the present invention, and FIG. 3 is a cross-sectional view of a mesa-type semiconductor rectifier according to an embodiment of the present invention. A cross-sectional view of a mesa-type semiconductor rectifier according to another embodiment, and FIG. 4 is a cross-sectional view of a conventional mesa-type semiconductor rectifier. 1... Mesa type semiconductor substrate, 2... Flat main electrode (
cathode electrode), 3... flat main electrode (thermal buffer plate)
, 4... Insulating film for surface protection, 5... Stop ring, 6... Shoulder on the outer periphery of the main surface of the substrate, 7... Annular notch, d... From the exposed plane of the flat main electrode to the notch Depth to the bottom surface, _d1 ...Depth from the main surface of the board to the bottom surface of the notch.

Claims (1)

【実用新案登録請求の範囲】 １ 少なくとも１つのＰＮ接合を有するメサ型の
半導体基板のメサ面を表面保護用絶縁物で被覆し
且つ前記メサ型基板の２つの主面にそれぞれ平板
主電極を形成してなる半導体装置において、少な
くとも１つの前記基板主面の外周縁の肩を切り欠
いた環状の切欠部を具備することを特徴とする半
導体装置。 ２ メサ型基板の１つの主面に形成される平板主
電極の露出平面から前記切欠部の底面までの深さ
が５μｍ以上であり且つ前記基板主面から前記切
欠部の底面までの深さが前記肩の属する一導電型
半導体層の厚さより浅い実用新案登録請求の範囲
第１項記載の半導体装置。[Claims for Utility Model Registration] 1. The mesa surface of a mesa-type semiconductor substrate having at least one PN junction is covered with a surface protection insulator, and flat main electrodes are formed on each of the two main surfaces of the mesa-type semiconductor substrate. 1. A semiconductor device comprising: an annular notch formed by cutting out a shoulder of an outer peripheral edge of at least one main surface of the substrate. 2. The depth from the exposed plane of the flat main electrode formed on one main surface of the mesa-type substrate to the bottom surface of the notch is 5 μm or more, and the depth from the main surface of the substrate to the bottom surface of the notch is 5 μm or more. The semiconductor device according to claim 1, which is shallower than the thickness of one conductivity type semiconductor layer to which the shoulder belongs.