JPH0470736U - - Google Patents

Info

Publication number
JPH0470736U
JPH0470736U JP11387590U JP11387590U JPH0470736U JP H0470736 U JPH0470736 U JP H0470736U JP 11387590 U JP11387590 U JP 11387590U JP 11387590 U JP11387590 U JP 11387590U JP H0470736 U JPH0470736 U JP H0470736U
Authority
JP
Japan
Prior art keywords
electrode
conductivity type
epitaxial layer
insulating film
type formed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11387590U
Other languages
Japanese (ja)
Other versions
JP2528031Y2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1990113875U priority Critical patent/JP2528031Y2/en
Publication of JPH0470736U publication Critical patent/JPH0470736U/ja
Application granted granted Critical
Publication of JP2528031Y2 publication Critical patent/JP2528031Y2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本考案を説明するための平面図、第２
図は第１図のＡＡ線断面図、第３図は従来例を説
明するための平面図、第４図は第３図のＢＢ線断
面図である。 Figure 1 is a plan view for explaining the present invention, Figure 2 is a plan view for explaining the present invention;
The figures are a sectional view taken along the line AA in FIG. 1, FIG. 3 is a plan view for explaining a conventional example, and FIG. 4 is a sectional view taken along the line BB in FIG.

Claims (1)

【実用新案登録請求の範囲】 (1) 一導電型の半導体基板上に形成した逆導電
型のエピタキシヤル層と、 前記エピタキシヤル
層の表面に形成した一導電型のベース領域と、 前記ベース領域の表面に形成した逆導電型のス
トライプ状のエミツタ領域と、 前記エピタキシヤル層表面を被覆する絶縁膜と
、 前記絶縁膜にほぼ一定間隔で開孔した第１のコ
ンタクトホールを介して前記エミツタ領域の表面
にコンタクトするシリコンを含有する第１の電極
と、 前記第１の電極を被覆する第２の絶縁膜と、 前記第２の絶縁膜に前記第１のコンタクトホー
ルとは互い違いとなるように開孔した第２のコン
タクトホールを介して前記第１の電極の表面にコ
ンタクトするシリコンを含有しない第２の電極と
を具備することを特徴とする半導体集積回路。 (2) 前記第１の電極はＡｌ−Ｓｉ、前記第２の
電極は純粋なＡｌであることを特徴とする請求項
第１項に記載の半導体集積回路。[Claims for Utility Model Registration] (1) An epitaxial layer of opposite conductivity type formed on a semiconductor substrate of one conductivity type, a base region of one conductivity type formed on the surface of the epitaxial layer, and the base region. a striped emitter region of opposite conductivity type formed on the surface of the epitaxial layer; an insulating film covering the surface of the epitaxial layer; a first electrode containing silicon in contact with a surface of the first electrode; a second insulating film covering the first electrode; and the first contact holes in the second insulating film are arranged alternately. A semiconductor integrated circuit comprising: a second electrode that does not contain silicon and contacts the surface of the first electrode through a second contact hole. (2) The semiconductor integrated circuit according to claim 1, wherein the first electrode is made of Al-Si and the second electrode is made of pure Al.
JP1990113875U 1990-10-29 1990-10-29 Semiconductor integrated circuit Expired - Lifetime JP2528031Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1990113875U JP2528031Y2 (en) 1990-10-29 1990-10-29 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1990113875U JP2528031Y2 (en) 1990-10-29 1990-10-29 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPH0470736U true JPH0470736U (en) 1992-06-23
JP2528031Y2 JP2528031Y2 (en) 1997-03-05

Family

ID=31861499

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1990113875U Expired - Lifetime JP2528031Y2 (en) 1990-10-29 1990-10-29 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JP2528031Y2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010056159A (en) * 2008-08-26 2010-03-11 Sanyo Electric Co Ltd Semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5248366U (en) * 1975-10-01 1977-04-06
JPS63258065A (en) * 1987-04-15 1988-10-25 Rohm Co Ltd Semiconductor device
JPH02159040A (en) * 1988-12-12 1990-06-19 Nec Corp Semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5248366U (en) * 1975-10-01 1977-04-06
JPS63258065A (en) * 1987-04-15 1988-10-25 Rohm Co Ltd Semiconductor device
JPH02159040A (en) * 1988-12-12 1990-06-19 Nec Corp Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010056159A (en) * 2008-08-26 2010-03-11 Sanyo Electric Co Ltd Semiconductor device

Also Published As

Publication number Publication date
JP2528031Y2 (en) 1997-03-05

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