JPH0283816A - Magnetic recording medium - Google Patents
Magnetic recording mediumInfo
- Publication number
- JPH0283816A JPH0283816A JP23548388A JP23548388A JPH0283816A JP H0283816 A JPH0283816 A JP H0283816A JP 23548388 A JP23548388 A JP 23548388A JP 23548388 A JP23548388 A JP 23548388A JP H0283816 A JPH0283816 A JP H0283816A
- Authority
- JP
- Japan
- Prior art keywords
- carbon
- layer
- magnetic recording
- base material
- recording medium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 39
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 38
- 239000010410 layer Substances 0.000 claims abstract description 23
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 8
- 239000011241 protective layer Substances 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 15
- 229910006992 Si1-xCx Inorganic materials 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 238000010030 laminating Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 14
- 238000000576 coating method Methods 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 3
- 239000005977 Ethylene Substances 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 150000002500 ions Chemical group 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- -1 etc. from (5) Chemical compound 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910021385 hard carbon Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
Landscapes
- Magnetic Record Carriers (AREA)
Abstract
Description
【発明の詳細な説明】
「発明の利用分野」
本発明は、炭素系被膜を保護層として応用する上で、酸
化物の磁気記録媒体表面を有する基材に対し、界面特性
、特に密着性を向上させ、炭素系被膜の特徴である耐摩
耗性、高平滑性、高硬度等の緒特性を最大限に引き出す
ものである。Detailed Description of the Invention "Field of Application of the Invention" The present invention is directed to the application of a carbon-based film as a protective layer to a base material having an oxide magnetic recording medium surface by improving interfacial properties, particularly adhesion. This is to maximize the characteristics of carbon-based coatings, such as wear resistance, high smoothness, and high hardness.
「従来技術」
従来より、多種多様な基材に炭素または炭素を主成分と
する被膜を形成することが試みられているが、下地基材
の違いによって必ずしも満足のいく密着性が得られてい
ないのが現状である。"Prior Art" Previous attempts have been made to form carbon or carbon-based coatings on a wide variety of substrates, but satisfactory adhesion has not always been achieved due to differences in the underlying substrates. is the current situation.
特に、酸化物の磁気記録媒体を表面に有する基材に関し
ては、本質的に炭素系被膜と良好な界面特性、主に密着
性が得られないことから、新しい技術の開発が急がれる
。In particular, with respect to base materials having oxide magnetic recording media on their surfaces, it is essentially impossible to obtain good interfacial properties, mainly adhesion, with carbon-based coatings, so there is an urgent need to develop new techniques.
「従来技術の問題点Ｊ
界面密着性が良好でない原因として、カーボン系有機汚
染物あるいは酸化性汚染物が下地基材に含浸または表面
に吸着している為と考えられているが、これらがどのよ
うに作用しているかは不明な点が多い。``Problems with conventional technology J: It is believed that the reason for poor interfacial adhesion is that carbon-based organic contaminants or oxidative contaminants are impregnated into the base material or adsorbed on the surface. There are many unknowns about how it works.
そして上記汚染物に関してはＵＶ （紫外線）を用いた
オゾン処理または真空加熱処理およびイオンボンバード
処理等で軽減できることは周知のことである。It is well known that the above contaminants can be reduced by ozone treatment using UV (ultraviolet light), vacuum heat treatment, ion bombardment treatment, or the like.
しかし基材自身が酸化物の場合、基材表面には酸素を介
した結合を有している。そこに炭素系被膜を形成する際
、界面付近において、炭素と酸素が反応し、ｃｏが形成
されこの界面に吸着または含有される。これは本来、気
体であるために表面から離脱する。結果として、これら
の上面に炭素または炭素を主成分とする被膜が形成され
たとしても、界面にＣ−０結合が混在していればこの結
合は本来気体性であるため、初期及び経時に密着性が低
下することは明らかである。However, when the base material itself is an oxide, the base material surface has bonds via oxygen. When a carbon-based film is formed there, carbon and oxygen react near the interface, and co is adsorbed or contained in the interface. Since this is originally a gas, it separates from the surface. As a result, even if carbon or a film containing carbon as a main component is formed on the upper surface of these, if C-0 bonds are present at the interface, this bond is gaseous in nature, so it will not adhere well initially and over time. It is clear that the quality is reduced.
原子間結合エネルギを以下に示す。The interatomic bond energy is shown below.
Ｃ−０２５６Ｋｃａｌ／ｍｏｌ
Ｃ−Ｃ１４４Ｋｃａｌ／ｍｏｌ
Ｏ−Ｈ１０２
ｅ−０９８
Ｃ−Ｈ８１／／
５ｉ−０１９２
Ｓｉ−Ｃ１０４〃
Ｈ−Ｈ１０４〃
５ｉ−Ｈ７５〃
「問題を解決すべき手段」
本発明は、炭素または炭素を主成分とする被膜を酸化物
磁気記録媒体表面を有する基材上に積層するに際し、こ
の中間層として応力歪を緩和する目的でＳｉ＋−ｘｃｘ
（０＜ ｘ ＜１）で示され得るバッファ層を設けるこ
とが主である。そしてこのＸの値を磁気記録媒体側で小
さく、また炭素側で大きくすることにより、グレーティ
ングをさせたものである。C-0256Kcal/mol C-C144Kcal/mol O-H102 e-098 C-H81// 5i-0192 Si-C104〃 H-H104〃 5i-H75〃 "Means to solve the problem" The present invention provides When a film mainly composed of carbon is laminated on a base material having an oxide magnetic recording medium surface, Si+-xcx is used as an intermediate layer for the purpose of alleviating stress strain.
The main thing is to provide a buffer layer that can be expressed as (0<x<1). A grating is created by making the value of X smaller on the magnetic recording medium side and larger on the carbon side.
特に−５〜−２０Ｘ １０９ｄｙｎ／ｃｍ”の圧縮応力
を有す炭素系被膜と下地酸化物表面を有する基材との間
での応力緩和と、下地基材との密着性向上のため直接Ｃ
−Ｏ結合を排除することで、従来困難とされていた酸化
物基材上にＳｉ＋−ｘｃｘ（０＜ ｘ ＜１ ｘを可変
）とその上に炭素または炭素を主成分とする被膜形成を
可能としたものである。In particular, direct C is used to relieve stress between a carbon-based coating having a compressive stress of -5 to -20X 109 dyn/cm and a base material having an underlying oxide surface, and to improve adhesion to the underlying base material.
By eliminating -O bonds, it is now possible to form Si+-xcx (0 < x < 1 x variable) on oxide substrates, which was previously considered difficult, and a film containing carbon or carbon as the main component. That is.
炭素膜のコーティングに介しては、本発明人の出願にな
る特許願「炭素または炭素を主成分とする被膜を形成す
る方法」 （昭和６３年３月２日出願）が知られている
。上記の目的を達成する為に、本発明の実施に使用した
バッファ層および炭素系被膜の作製装置の概要を実施例
に従って説明する。Regarding carbon film coating, a patent application filed by the present inventor entitled ``Method of Forming Carbon or a Film Containing Carbon as a Main Component'' (filed on March 2, 1988) is known. In order to achieve the above object, an outline of a buffer layer and carbon-based coating manufacturing apparatus used in carrying out the present invention will be explained according to examples.
「実施例」
第１図は平行平板型プラズマ装置で、ガス系（１）にお
いて、キャリアガスである水素を（２）より、反応性気
体である珪化水素気体、例えばシラン、ジシランを（３
）より、炭化水素気体、例えばメタン、エチレンを（４
）、それらのエツチング用気体である弗化物気体、例え
ば三弗化窒素、六弗化硫黄等を（５）より、また炭素系
被膜専用のエツチング気体として酸素を（６）より、バ
ルブ（７）、流量計（８）を介して反応系（９）中のノ
ズル（１０）より導入する。``Example'' Figure 1 shows a parallel plate plasma apparatus, in which hydrogen as a carrier gas is transferred from (2) to hydrogen silicide gas as a reactive gas, such as silane or disilane (3), in a gas system (1).
), hydrocarbon gases, such as methane and ethylene, can be converted to (4
), fluoride gas as an etching gas such as nitrogen trifluoride, sulfur hexafluoride, etc. from (5), oxygen as an etching gas exclusively for carbon-based coatings from (6), and a valve (7). , is introduced from a nozzle (10) into the reaction system (9) via a flowmeter (8).
反応系（９）では減圧下にて珪素系被膜、炭化珪素系被
膜および炭素系被膜の成膜およびそれらのエツチング処
理を行う。反応系（９）では第１の電極（１１）、第２
の電極（１２）を有し、一対の電極（１１）、（１２）
間には高周波電源（１３） 、マツチングトランス（１
４）、直流バイアス電源（１５）より電気エネルギが加
えられ、プラズマが発生する。反応性気体のより一層の
分解を促進する為には、２．４５ＧＨｚのマイクロ波に
て、２００〜２に−のマイクロ波励起を用いるのはよい
。In the reaction system (9), a silicon-based film, a silicon carbide-based film, and a carbon-based film are formed and etched under reduced pressure. In the reaction system (9), the first electrode (11), the second
has a pair of electrodes (11) and (12).
In between is a high frequency power supply (13) and a matching transformer (1
4) Electrical energy is applied from the DC bias power supply (15) to generate plasma. In order to promote further decomposition of the reactive gas, it is preferable to use microwave excitation of 200 to 2 - at 2.45 GHz microwave.
本実施例によると、酸化物磁性記録媒体、例えばアルミ
ニウム基板上にγ−Ｆｅｚｅｓまたはこれに添加物を加
えた磁性材料を第１の電極即ち切り換えスイッチ（１Ｂ
） 、 （１９）を選択して、接地側にセットした。次
にこの反応系をＩ Ｘｌ０−’ｔｏｒｒ以下に真空引き
して基材上および反応容器内の残存気体を除去した。そ
の後、反応性気体であるモノシラン、例えばＨ２ベース
３％シランとエチレンとを導入し、０．０１〜１ｔｏｒ
ｒ、代表的には０．１ｔｏｒｒに圧力調整パル＝５
ブ（２１）にて調整し、高周波電圧を印加し、反応性気
体をプラズマ化させ、周知の如＜ 、５ｉ−３ｔおよび
Ｓ ｉ −ＩＩ結合を多数形成したアモルファス構造の
Ｓｉ＋−ｘＣｘ（０＜ ｘ ＜１）を形成する。この形
成に際して、連続的にグレーティングをさせる場合、エ
チレンの導入量をまずＣＪ４／５ｉＨ４＝０．１ とし
た。これを成膜とともに漸増して１〜１０にまでした。According to this embodiment, a magnetic material such as γ-Fezes or γ-Fezes to which additives are added is placed on an oxide magnetic recording medium, for example, an aluminum substrate, and is connected to the first electrode, that is, the changeover switch (1B
), (19) was selected and set to the ground side. Next, the reaction system was evacuated to below I Xl0 -'torr to remove residual gas on the substrate and in the reaction vessel. Then, monosilane as a reactive gas, such as 3% silane based on H2, and ethylene are introduced, and the
r, typically 0.1 torr, is adjusted with the pressure adjustment pulse (21), and a high frequency voltage is applied to turn the reactive gas into plasma. An amorphous structure Si+-xCx (0<x<1) is formed with a large number of II bonds. When forming the grating continuously, the amount of ethylene introduced was first set to CJ4/5iH4=0.1. This number was gradually increased to 1 to 10 as the film was formed.
この成膜速度は概略１０人／分と遅くし、この厚さは２
０〜１００ＯＡ、代表的には２００人とした。The film forming speed is approximately 10 people/min, and the thickness is 2
0 to 100OA, typically 200 people.
この後、第１図において基材をカソード側として、炭素
を５００〜５０００人形成した。そして第２図を得た。Thereafter, 500 to 5,000 carbon layers were formed using the base material as the cathode side in FIG. And I obtained Figure 2.
第３図（八）はこの成膜した構造をＳＩＭＳ（二次イオ
ン型質量分析機）で測定したものである。鉄（３１）シ
リコン（３３）、炭素（３４）である。FIG. 3 (8) shows the structure thus formed, measured by SIMS (secondary ion mass spectrometer). They are iron (31), silicon (33), and carbon (34).
第２図のγ−ＦｅｚＯｓ（２４）、５ｉｔ−１ｌＣｘ（
０＜ ｘ ＜１）（２５）。γ-FezOs (24), 5it-1lCx (
0<x<1) (25).
炭素（２６）における深さ分布、特にＡ−Ａ’での分布
を調べた。The depth distribution of carbon (26), especially the distribution at AA', was investigated.
またこのＳ＋＋−ｘＣｘ（０＜ ｘ ＜１）のバッファ
層として、炭化珪素をｘ ＝Ｏ，ｌ、０．３と多層構造
とするには、成膜中にＣｚ Ｈ４／ Ｓ ｊ ＋Ｉ ＜
を０．３および１．０と可変すればよい。Furthermore, in order to use silicon carbide as a buffer layer of S++-xCx (0<x<1) to form a multilayer structure with x=O, l, 0.3, Cz H4/ S j +I<
may be varied between 0.3 and 1.0.
次に切り換えスイッチ（１８） 、 （１９）を選択し
て、基材が高周波印加電極側になるようにする。この状
態で反応性気体であるメタンと水素とを２：１の割合で
導入し、０．０１〜１．０ｔｏｒｒ代表的にはＱ、 ｌ
Ｌｏｒｒに調整し、高周波電圧を印加して反応性気体
をプラズマ化させた。すると、プラズマ中の電子がイオ
ンと移動度の差および質量の差により、高周波が印加さ
れた電極に電荷が蓄積される。するとプラズマの電位と
の間に電界が発生し、プラズマ中にとり残された正イオ
ン（例えばＣ，Ｃ１（、ＣＩｌ□、Ｈ）が加速され、炭
素系被膜の堆積過程において耐エツチング性の低いグラ
ファイト成分がエツチング除去されながらｓｐ”結合を
有するアモルファスカーボンを堆積させることが可能と
なる。その結果、硬質の炭素性被膜が２０人／ｎ＋ｉｎ
、の成膜速度で１００〜５０００人代表的には１０００
人形成される。反応後の不要物は排気系（２０）より圧
力調整バルブ（２１）、タボ分子ポンプ（２２）、ロー
タリーポンプ（２３）を経て排気される。こうして得ら
れた炭素系被膜はビッカース硬度が１０００〜７０００
Ｋｇ／ＩＩＩＩＩｌ！代表的に＋１−２０００〜２５０
０Ｋｇ／ｍｍ”前後である。Next, select the changeover switches (18) and (19) so that the base material is on the high frequency application electrode side. In this state, methane and hydrogen, which are reactive gases, are introduced at a ratio of 2:1, and the pressure is typically 0.01 to 1.0 torr.
Lorr, and a high frequency voltage was applied to turn the reactive gas into plasma. Then, due to the difference in mobility and mass between the electrons in the plasma and the ions, charges are accumulated on the electrode to which the high frequency is applied. Then, an electric field is generated between the plasma potential and the positive ions (for example, C, C1 (, CIl□, H) left behind in the plasma are accelerated, and during the deposition process of the carbon-based film, graphite with low etching resistance is It becomes possible to deposit amorphous carbon having sp" bonds while the components are etched away. As a result, a hard carbon film can be formed at a rate of 20 people/n+in.
, typically 100 to 5000 people at a deposition rate of .
A person is formed. Unwanted substances after the reaction are exhausted from the exhaust system (20) via the pressure regulating valve (21), the Tavo molecular pump (22), and the rotary pump (23). The carbon-based coating thus obtained has a Vickers hardness of 1000 to 7000.
Kg/III! Typically +1-2000~250
It is around 0Kg/mm".
第３図（Ｂ）において、バッファ層（２５）は５ｔｌ−
Ｘｃｘ（０＜ｘ＜１）で示されるＣを２層とした。この
ため、下地の酸化物磁気記録媒体と炭素との間の応力歪
を少なくし、またこのバッファ層の炭素の平均濃度は実
験でバラツキはあったが、Ｉ ＸＩＯ”〜２×１０”ｃ
ｍ−’の範囲に入っていた。In FIG. 3(B), the buffer layer (25) is 5tl-
There were two layers of C represented by Xcx (0<x<1). For this reason, stress strain between the underlying oxide magnetic recording medium and carbon is reduced, and although the average concentration of carbon in this buffer layer varies in experiments,
It was in the range m-'.
「効果」
本発明によれば、従来能しいとされていた基材、特に酸
化物基材上に対し、界面応力緩和効果、即ち応力を階段
状に制御可変すること、および本質的に整合性の悪いと
される酸化物と炭化物を直接接触させないことによる界
面Ｃ−Ｏ結合の阻止効果がバッファ層により期待できる
。"Effects" According to the present invention, it is possible to achieve an interfacial stress relaxation effect, that is, to controllably vary the stress in a stepwise manner, on a substrate, in particular an oxide substrate, which has been thought to be possible in the past. The buffer layer can be expected to have the effect of preventing interfacial C--O bonds by preventing direct contact between oxides and carbides, which are considered to be bad.
以上により、界面特性、特に密着性の初期および経時変
化に対し、多大な改善効果があることを見出したもので
ある。As a result of the above, it has been found that there is a significant improvement effect on interfacial properties, particularly on initial changes in adhesion and changes over time.
第１図は本発明の実施に使用した平行平板型プラズマ装
置の概要を示す。
第２図は本発明により作製されたバッファ層を介して形
成した炭素系被膜の断面を示す。
第３図は本発明により作製された磁気記録媒体の深さ方
向の濃度の分布を示す。FIG. 1 shows an outline of a parallel plate type plasma apparatus used in carrying out the present invention. FIG. 2 shows a cross section of a carbon-based coating formed through a buffer layer prepared according to the present invention. FIG. 3 shows the concentration distribution in the depth direction of the magnetic recording medium manufactured according to the present invention.
Claims (1)
ｉ＿１＿−＿ｘＣｘ（０＜ｘ＜１）で示され得るシリコ
ン炭化物層と、該シリコン炭化珪素層上の炭素または炭
素を主成分とする層からなる保護層とを有するとともに
、前記ｘは磁気記録層側で小さく、炭素または炭素を主
成分とする側で大きな値を有することを特徴とする磁気
記録媒体。 ２、特許請求の範囲第１項において、Ｓｉ＿１＿−＿ｘ
Ｃｘ（０＜ｘ＜１）で示されるシリコン炭素化物は炭素
を１×１０＾１＾９〜２×１０＾２＾１ｃｍ＾−＾３の
濃度にその平均濃度で含有するとともに、水素が１×１
０＾２＾０〜２×１０＾２＾２ｃｍ＾−＾３の濃度に添
加された非晶質層よりなることを特徴とする磁気記録媒
体。 ３、特許請求の範囲第１項において、Ｓｉ＿１＿−＿ｘ
Ｃｘ（０＜ｘ＜１）で示されるシリコン炭化物層はｘが
少なくとも２積層を有する多層構造を有することを特徴
とする磁気記録媒体。[Claims] 1. A magnetic recording layer on a substrate and an S provided on the recording layer.
It has a silicon carbide layer that can be represented by i_1_−_xCx (0<x<1), and a protective layer made of carbon or a layer mainly composed of carbon on the silicon carbide layer, and the x is a magnetic recording layer. A magnetic recording medium characterized by having a small value on the side and a large value on the side containing carbon or carbon as a main component. 2. In claim 1, Si_1_-_x
Silicon carbide represented by Cx (0<x<1) contains carbon at an average concentration of 1 x 10^1^9 to 2 x 10^2^1 cm^-^3 and hydrogen at 1 ×1
A magnetic recording medium comprising an amorphous layer doped with a concentration of 0^2^0 to 2x10^2^2 cm^-^3. 3. In claim 1, Si_1_-_x
A magnetic recording medium characterized in that the silicon carbide layer represented by Cx (0<x<1) has a multilayer structure in which x has at least two stacked layers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63235483A JP2744970B2 (en) | 1988-09-19 | 1988-09-19 | Magnetic recording media |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63235483A JP2744970B2 (en) | 1988-09-19 | 1988-09-19 | Magnetic recording media |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0283816A true JPH0283816A (en) | 1990-03-23 |
| JP2744970B2 JP2744970B2 (en) | 1998-04-28 |
Family
ID=16986730
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63235483A Expired - Lifetime JP2744970B2 (en) | 1988-09-19 | 1988-09-19 | Magnetic recording media |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2744970B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04313812A (en) * | 1991-04-12 | 1992-11-05 | Nec Corp | Magnetic disk |
| US6165582A (en) * | 1992-11-19 | 2000-12-26 | Semiconductor Energy Laboratory Co., Ltd. | Magnetic recording medium |
| US6171674B1 (en) * | 1993-07-20 | 2001-01-09 | Semiconductor Energy Laboratory Co., Ltd. | Hard carbon coating for magnetic recording medium |
| US6805941B1 (en) | 1992-11-19 | 2004-10-19 | Semiconductor Energy Laboratory Co., Ltd. | Magnetic recording medium |
| US6835523B1 (en) | 1993-05-09 | 2004-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Apparatus for fabricating coating and method of fabricating the coating |
| US7255220B2 (en) | 2002-12-20 | 2007-08-14 | Honda Motor Co., Ltd. | Conveyance system |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62125522A (en) * | 1985-11-27 | 1987-06-06 | Hitachi Ltd | Protective film for thin film magnetic disk |
-
1988
- 1988-09-19 JP JP63235483A patent/JP2744970B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62125522A (en) * | 1985-11-27 | 1987-06-06 | Hitachi Ltd | Protective film for thin film magnetic disk |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04313812A (en) * | 1991-04-12 | 1992-11-05 | Nec Corp | Magnetic disk |
| US6165582A (en) * | 1992-11-19 | 2000-12-26 | Semiconductor Energy Laboratory Co., Ltd. | Magnetic recording medium |
| US6194047B1 (en) * | 1992-11-19 | 2001-02-27 | Semiconductor Energy Laboratory Co., Ltd. | Magnetic recording medium |
| US6623836B1 (en) | 1992-11-19 | 2003-09-23 | Semiconductor Energy Laboratory Co., Ltd. | Magnetic recording medium |
| US6805941B1 (en) | 1992-11-19 | 2004-10-19 | Semiconductor Energy Laboratory Co., Ltd. | Magnetic recording medium |
| US7083873B2 (en) | 1992-11-19 | 2006-08-01 | Semiconductor Energy Laboratory Co., Ltd. | Magnetic recording medium including a diamond-like carbon protective film with hydrogen and at least two additional elements |
| US7391592B2 (en) | 1992-11-19 | 2008-06-24 | Semiconductor Energy Laboratory Co., Ltd. | Magnetic recording medium including a diamond-like carbon protective film and at least two additional elements |
| US6835523B1 (en) | 1993-05-09 | 2004-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Apparatus for fabricating coating and method of fabricating the coating |
| US6171674B1 (en) * | 1993-07-20 | 2001-01-09 | Semiconductor Energy Laboratory Co., Ltd. | Hard carbon coating for magnetic recording medium |
| US6183816B1 (en) | 1993-07-20 | 2001-02-06 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating the coating |
| US6468617B1 (en) | 1993-07-20 | 2002-10-22 | Semiconductor Energy Laboratory Co., Ltd. | Apparatus for fabricating coating and method of fabricating the coating |
| US7255220B2 (en) | 2002-12-20 | 2007-08-14 | Honda Motor Co., Ltd. | Conveyance system |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2744970B2 (en) | 1998-04-28 |
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