JPH02288221A - Peripheral exposure device for semiconductor substrate - Google Patents
Peripheral exposure device for semiconductor substrateInfo
- Publication number
- JPH02288221A JPH02288221A JP11023189A JP11023189A JPH02288221A JP H02288221 A JPH02288221 A JP H02288221A JP 11023189 A JP11023189 A JP 11023189A JP 11023189 A JP11023189 A JP 11023189A JP H02288221 A JPH02288221 A JP H02288221A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- cam
- semiconductor substrate
- resist
- motor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000002093 peripheral effect Effects 0.000 title claims abstract description 15
- 239000004065 semiconductor Substances 0.000 title claims description 16
- 239000000758 substrate Substances 0.000 title claims description 14
- 238000001514 detection method Methods 0.000 claims description 3
- 239000000835 fiber Substances 0.000 abstract description 5
- 239000000843 powder Substances 0.000 abstract description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052753 mercury Inorganic materials 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体基板の周辺露光装置に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a peripheral exposure apparatus for semiconductor substrates.
半導体基板（以下ウェハという）にフォトレジストを塗
布したのち、ウェハ周辺部の余分なフォトレジストを現
像により除去するために用いられる周辺露光装置では、
ウェハの端部をフォトセンサやＣＣＤで検出し、その信
号に応じてランプハウスに接続され光を照射するための
ファイバを動かし、ウェハの周囲を露光する様な機構と
なっていた。A peripheral exposure device is used to coat a semiconductor substrate (hereinafter referred to as a wafer) with photoresist and then remove the excess photoresist around the wafer by development.
The end of the wafer was detected by a photosensor or CCD, and in response to the signal, a fiber connected to a lamp house for irradiating light was moved to expose the periphery of the wafer.
この場合ウェハ上の露光部２０は第３図に示すように、
同一の幅で形成されていた。In this case, the exposure section 20 on the wafer is as shown in FIG.
They were formed with the same width.
上述した従来の周辺露光装置は、ウェハ１の端部を全周
にわたって同一幅で露光するような機構となっているた
め、ウェハ端部上の任意の場所のレジストを現像により
除去する事が不可能であった。このため、従来の周辺露
光装置で除去されない部分のレジストをはがす必要があ
る場合、はがされレジストの粉末がウニへ表面上に付着
し、半導体装置の歩留を低下させるという欠点がある。The conventional peripheral exposure device described above has a mechanism that exposes the edge of the wafer 1 with the same width over the entire circumference, so it is impossible to remove the resist at any location on the wafer edge by development. It was possible. For this reason, when it is necessary to peel off the resist in areas that are not removed by conventional peripheral exposure equipment, there is a drawback that powder of the peeled resist adheres to the surface of the resist, reducing the yield of semiconductor devices.
本発明の半導体装置の周辺露光装置は、半導体基板を吸
着する基体と、前記基体に接続し半導体基板を回転させ
るためのモータと、前記半導体基板の周辺部を検出する
周辺部検出手段と、水平方向に移動可能に設けられた光
照財部を有する半導体基板の周辺部露光手段とを含んで
構成される。A peripheral exposure apparatus for a semiconductor device according to the present invention includes a base that attracts a semiconductor substrate, a motor that is connected to the base and rotates the semiconductor substrate, a peripheral part detection means that detects a peripheral part of the semiconductor substrate, and a horizontal and a semiconductor substrate peripheral area exposure means having a light illumination part provided movably in the direction.
次に、本発明の実施例について図面を参照して説明する
。Next, embodiments of the present invention will be described with reference to the drawings.
第１図は本発明の第１の実施例の斜視図である。FIG. 1 is a perspective view of a first embodiment of the invention.
ウェハ１を真空吸着する基体２は、ウェハ回転モータ５
に接続されている。そして、この基板２のウェハ吸着部
の下部には、ウェハ１と同一形状のカム３が設けられて
おり、モータ６に接続されたカム８により、光照財部で
あるレンズユニット４がウェハ１の周辺部を露光できる
ように構成されている。特に、ランプハウス１０がらフ
ァイバ９により導かれる光を照射するこのレンズユニッ
ト４は、モータ６により水平方向に移動できるように構
成されている。以下その動作について説明する。The base body 2 that vacuum-chucks the wafer 1 is connected to a wafer rotation motor 5.
It is connected to the. A cam 3 having the same shape as the wafer 1 is provided at the bottom of the wafer adsorption section of the substrate 2. A cam 8 connected to a motor 6 moves a lens unit 4, which is a light source, around the wafer 1. The structure is such that the area can be exposed to light. In particular, this lens unit 4, which irradiates light guided by the fiber 9 from the lamp house 10, is configured to be movable in the horizontal direction by a motor 6. The operation will be explained below.
ランプハウス１０内に取り付けられた水銀灯によるＵ■
光は、ファイバ９にてレンズユニット４に導かれ、レジ
ストの塗布されたウェハ１上へ照射される。ウェハ回転
モータ５によりウェハｌとカム３を回転させることによ
り、ウェハ１の周辺部のレジストは一定の幅で露光され
る。この時、ウェハ１のオリエンテーションフラット部
もカム３とこのカム３に押しつけられたカム８との倣い
により露光される。すなわち、必要な露光量が得られる
までウェハ１を回転させた後、ウェハオリエンテーショ
ンフラットの端部ＩＡをカム８にて検知し、その端部Ｉ
Ａを原点とし、次で角度コントローラ（図示せず）によ
り指定された角度迄ウェハ回転モータ５を用いてウェハ
１を回転させる。次にレンズユニット４をモータ６によ
りウェハ内部に動かし第４図に示すように所定の領域を
選択的に露光する。この操作によりウェハ１には、例え
ばイオン注入装置の保持具が接触する部分に露光部２Ｏ
Ａが形成され、この部分のレジストは現像により除去さ
れる。U■ by the mercury lamp installed in the lamp house 10
The light is guided to the lens unit 4 through a fiber 9 and is irradiated onto the wafer 1 coated with resist. By rotating the wafer 1 and the cam 3 by the wafer rotation motor 5, the resist on the periphery of the wafer 1 is exposed with a constant width. At this time, the orientation flat portion of the wafer 1 is also exposed by the tracing of the cam 3 and the cam 8 pressed against the cam 3. That is, after rotating the wafer 1 until the required exposure amount is obtained, the end IA of the wafer orientation flat is detected by the cam 8, and the end IA of the wafer orientation flat is detected by the cam 8.
With A as the origin, the wafer 1 is then rotated using the wafer rotation motor 5 to an angle specified by an angle controller (not shown). Next, the lens unit 4 is moved inside the wafer by the motor 6 to selectively expose a predetermined area as shown in FIG. Through this operation, the wafer 1 is exposed to the exposed portion 2O, for example, in the portion that is in contact with the holder of the ion implantation device.
A is formed, and this portion of the resist is removed by development.
第２図（ａ）、（ｂ）は本発明の第２の実施例の上面図
及び正面図である。FIGS. 2(a) and 2(b) are a top view and a front view of a second embodiment of the present invention.
ウェハ１はウェハ回転モータ５に接続された基体２に真
空吸着される。ウェハ１の端部はウェハ端部センサ７に
て検知され、その位置に応じてモータ６を第１の実施例
と同様に動かしウェハｌの周囲を任意にかつ選択的に露
光する。The wafer 1 is vacuum-adsorbed onto a base 2 connected to a wafer rotation motor 5. The edge of the wafer 1 is detected by the wafer edge sensor 7, and the motor 6 is moved in accordance with the detected position in the same manner as in the first embodiment to arbitrarily and selectively expose the periphery of the wafer 1.
本箱２の実施例では、ウェハ端部センサ７の検知範囲内
であれば、いかなる形状のものでも処理可能である。従
って第１の実施例のように、カム３とウェハ１との整合
などのプリアライメントの必要もないため、処理時間の
短縮化を図ることができる。In the embodiment of the bookcase 2, any shape can be processed as long as it is within the detection range of the wafer edge sensor 7. Therefore, unlike the first embodiment, there is no need for pre-alignment such as alignment between the cam 3 and the wafer 1, so that the processing time can be shortened.
以上説明したように本発明は、ウェハ周囲の任意の場所
を選択的に検出し露光する手段を設ける事により、現像
後の工程でのレジストの剥離によるウェハ表面への粉末
の付着を無くすことができる。従って半導体装置の歩留
りを向上させることができる。As explained above, the present invention eliminates the adhesion of powder to the wafer surface due to resist peeling in the post-development process by providing means for selectively detecting and exposing arbitrary locations around the wafer. can. Therefore, the yield of semiconductor devices can be improved.
第１図は本発明の第１の実施例の斜視図、第２図（ａ）
、（ｂ）は本発明の第２の実施例の上面図及び正面図、
第３図及び第４図は従来例及び実施例によるウェハ周辺
の露光部を説明するためのウェハの上面図である。
１・・・ウェハ、ＩＡ・・・端部、２・・・基体、３・
・・カム、４・・・レンズユニット、５・・・ウェハ回
転モータ、６・・・モータ、７・・・ウェハ端部センサ
、８・・・カム、９・・・ファイバ、１０・・・ランプ
ハウス。Fig. 1 is a perspective view of the first embodiment of the present invention, Fig. 2(a)
, (b) is a top view and a front view of the second embodiment of the present invention,
FIG. 3 and FIG. 4 are top views of a wafer for explaining an exposure section around a wafer according to a conventional example and an embodiment. DESCRIPTION OF SYMBOLS 1... Wafer, IA... End part, 2... Base body, 3...
...Cam, 4...Lens unit, 5...Wafer rotation motor, 6...Motor, 7...Wafer edge sensor, 8...Cam, 9...Fiber, 10... lamp house.
Claims (1)
基板を回転させるためのモータと、前記半導体基板の周
辺部を検出する周辺部検出手段と、水平方向に移動可能
に設けられた光照射部を有する半導体基板の周辺部露光
手段とを含むことを特徴とする半導体基板の周辺露光装
置。A base body that attracts a semiconductor substrate, a motor that is connected to the base body and that rotates the semiconductor substrate, a peripheral area detection means that detects a peripheral area of the semiconductor substrate, and a light irradiation unit that is movable in a horizontal direction. 1. A peripheral exposure apparatus for a semiconductor substrate, comprising: a semiconductor substrate peripheral area exposure means having a semiconductor substrate peripheral area exposure means.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11023189A JPH02288221A (en) | 1989-04-27 | 1989-04-27 | Peripheral exposure device for semiconductor substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11023189A JPH02288221A (en) | 1989-04-27 | 1989-04-27 | Peripheral exposure device for semiconductor substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02288221A true JPH02288221A (en) | 1990-11-28 |
Family
ID=14530421
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11023189A Pending JPH02288221A (en) | 1989-04-27 | 1989-04-27 | Peripheral exposure device for semiconductor substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02288221A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04291938A (en) * | 1991-03-20 | 1992-10-16 | Ushio Inc | Aligner and exposure method for inessential resist on wafer |
| US5982474A (en) * | 1996-06-06 | 1999-11-09 | Dainippon Screen Mfg. Co., Ltd. | Periphery exposing apparatus and method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63160332A (en) * | 1986-12-24 | 1988-07-04 | Mitsubishi Electric Corp | Resist-removing system |
| JPH0258213A (en) * | 1988-08-23 | 1990-02-27 | Seiko Epson Corp | Manufacture of semiconductor device |
| JPH02114628A (en) * | 1988-10-25 | 1990-04-26 | Ushio Inc | Peripheral exposure of wafer |
-
1989
- 1989-04-27 JP JP11023189A patent/JPH02288221A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63160332A (en) * | 1986-12-24 | 1988-07-04 | Mitsubishi Electric Corp | Resist-removing system |
| JPH0258213A (en) * | 1988-08-23 | 1990-02-27 | Seiko Epson Corp | Manufacture of semiconductor device |
| JPH02114628A (en) * | 1988-10-25 | 1990-04-26 | Ushio Inc | Peripheral exposure of wafer |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04291938A (en) * | 1991-03-20 | 1992-10-16 | Ushio Inc | Aligner and exposure method for inessential resist on wafer |
| US5982474A (en) * | 1996-06-06 | 1999-11-09 | Dainippon Screen Mfg. Co., Ltd. | Periphery exposing apparatus and method |
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