JPH04258113A - Peripheral exposure method - Google Patents
Peripheral exposure methodInfo
- Publication number
- JPH04258113A JPH04258113A JP1973091A JP1973091A JPH04258113A JP H04258113 A JPH04258113 A JP H04258113A JP 1973091 A JP1973091 A JP 1973091A JP 1973091 A JP1973091 A JP 1973091A JP H04258113 A JPH04258113 A JP H04258113A
- Authority
- JP
- Japan
- Prior art keywords
- resist film
- semiconductor wafer
- light
- exposure
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000002093 peripheral effect Effects 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims description 14
- 239000004065 semiconductor Substances 0.000 claims abstract description 38
- 238000005286 illumination Methods 0.000 abstract 2
- 239000010408 film Substances 0.000 description 31
- 230000007246 mechanism Effects 0.000 description 12
- 230000002411 adverse Effects 0.000 description 4
- 239000000428 dust Substances 0.000 description 4
- 239000013307 optical fiber Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007723 transport mechanism Effects 0.000 description 2
- 238000000576 coating method Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は露光装置に関し、特に感
光性レジストを塗布した半導体ウェハの周辺部の不要な
レジストを除去する周辺露光方法に係わる。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure apparatus, and more particularly to a peripheral exposure method for removing unnecessary resist from the peripheral area of a semiconductor wafer coated with a photosensitive resist.
【０００２】0002
【従来技術】従来から、半導体集積回路素子製造工程で
半導体ウェハ上に積層された薄膜を所望のパターンに形
成する工程では、薄膜上にレジスト膜を塗布し、所望の
パターンに形成したマスクを通し前記レジスト膜を露光
した後、現像、エッチングして薄膜をパターンに形成し
ている。薄膜にレジストを塗布するレジスト塗布工程で
は、半導体ウェハ上にレジスト液を滴下して半導体ウェ
ハを高速回転させ塗布するスピンコータが用いられるた
め、パターン形成されている中心部からパターンが形成
されていない周辺部までレジスト膜は塗布されてしまう
。そのため、搬送機構等で半導体ウェハの周辺部を支持
する際に周辺部の余剰のレジスト膜が剥離され、ゴミ、
パーティクル発生の原因となってしまった。ゴミ、パー
ティクル発生を防止するため、周辺に塗布された余剰の
レジストを除去するため半導体ウェハの周辺部のみを露
光し、現像を行う周辺露光装置がある（特開平１−１８
７８２２号、特開平１−１９４３２４号、特開平１−２
１７９１６号、特開平１−２５１６１４号公報等）。[Prior Art] Conventionally, in the process of forming thin films laminated on a semiconductor wafer into a desired pattern in the manufacturing process of semiconductor integrated circuit elements, a resist film is coated on the thin film, and a resist film formed in the desired pattern is passed through the film. After the resist film is exposed, it is developed and etched to form a thin film into a pattern. In the resist coating process of applying resist to a thin film, a spin coater is used to drop resist solution onto the semiconductor wafer and rotate the semiconductor wafer at high speed. The resist film is coated up to the exposed area. Therefore, when supporting the periphery of the semiconductor wafer with a transport mechanism, excess resist film on the periphery is peeled off, and dust and dirt are removed.
This caused particles to be generated. In order to prevent the generation of dust and particles, there is a peripheral exposure device that exposes only the peripheral area of a semiconductor wafer and develops it to remove excess resist applied to the peripheral area (Japanese Patent Laid-Open No. 1-18).
No. 7822, JP-A-1-194324, JP-A-1-2
17916, JP-A-1-251614, etc.).
【０００３】0003
【発明が解決すべき課題】周辺露光装置は、光源からの
Ｕ．Ｖ光を光ファイバー等の光導管等で導き、位置セン
サで半導体の位置を検知して半導体ウェハあるいは光フ
ァイバーを移動、回転させて半導体ウェハの周辺の露光
を行うものである。しかしながらこれらの周辺露光装置
ではレジストの半導体ウェハへの密着力と、露光のため
の光の強度が適当でないことが多かった。また半導体ウ
ェハのエッジ部は研磨精度が悪く、さらに半導体ウェハ
搬送時のゴミ等が付着しやすくレジスト膜の密着が低い
。また前記露光の光の強度が強すぎるとレジスト膜から
例えばＮ２等の気体が激しく発生し、その結果レジスト
膜が割れてレジストの破片が飛散し、光ファイバーの先
端に設けたレンズ等に付着したりあるいはレジスト膜が
変形し、照射距離が変って照射強度にムラが生じてしま
った。また、さらにレジスト膜がめくれ上がってパター
ン形成部まで悪影響を及ぼしてしまうこともあった。Problems to be Solved by the Invention A peripheral exposure device is designed to reduce the amount of U.S. from a light source. The V light is guided through a light conduit such as an optical fiber, the position of the semiconductor is detected by a position sensor, and the semiconductor wafer or optical fiber is moved and rotated to expose the periphery of the semiconductor wafer. However, in these peripheral exposure devices, the adhesion of the resist to the semiconductor wafer and the intensity of light for exposure are often inadequate. Furthermore, the polishing accuracy of the edge portion of the semiconductor wafer is poor, and furthermore, the adhesion of the resist film is poor because dust and the like are likely to adhere thereto during the transportation of the semiconductor wafer. Furthermore, if the intensity of the exposure light is too strong, gases such as N2 will be violently generated from the resist film, and as a result, the resist film will crack and fragments of the resist will scatter, and may adhere to the lens etc. provided at the tip of the optical fiber. Alternatively, the resist film is deformed, the irradiation distance changes, and the irradiation intensity becomes uneven. Furthermore, the resist film may be rolled up, which may adversely affect the pattern forming area.
【０００４】本発明は上記の欠点を解消するためになさ
れたものであって、半導体ウェハの周辺部に塗布された
余剰レジスト膜を適度な強度で露光して除去し、歩留り
良くパターン形成を行う周辺露光方法を提供することを
目的とする。The present invention has been made to eliminate the above-mentioned drawbacks, and involves removing the excess resist film coated on the periphery of a semiconductor wafer by exposing it to light at a moderate intensity, thereby forming a pattern with a high yield. The purpose is to provide a peripheral exposure method.
【０００５】[0005]
【課題を解決するための手段】上記の目的を達成するた
め、本発明の周辺露光方法は、半導体ウェハと光源から
の光とを相対的に移動して前記半導体ウェハの周辺部に
塗布されたレジスト膜を露光する露光装置において、前
記周辺部の露光領域を同心状に複数に分割し、前記同心
円の内側と、外側とをそれぞれ前記光の照射強度及び照
射時間を調整し、周辺程照射強度を相対的に弱く露光す
るものである。[Means for Solving the Problems] In order to achieve the above object, the peripheral exposure method of the present invention involves relatively moving light from a semiconductor wafer and a light source to apply light to the peripheral portion of the semiconductor wafer. In an exposure apparatus that exposes a resist film, the peripheral exposure area is concentrically divided into a plurality of parts, and the irradiation intensity and irradiation time of the light are adjusted inside and outside the concentric circles, respectively, so that the irradiation intensity increases as the periphery increases. It exposes the light relatively weakly.
【０００６】[0006]
【作用】レジスト塗布した半導体ウェハの周辺を露光し
て余剰のレジストを除去する際に、レジスト膜の半導体
ウェハへの密着力に応じて露光の強度及び時間を調整し
て行う。そのため、周辺部の露光領域を同心状に分割し
、中心部に近いレジスト膜の密着が強い部分は短時間に
強く照射し、端縁部のレジスト膜の密着が弱い部分は弱
い光を長時間照射することによりパターン形成部のレジ
スト膜に悪影響を与えることなく露光できる。しかも全
体では露光時間の短縮を図ることができるので歩留りの
良いパターン形成を行うことができる。[Operation] When removing excess resist by exposing the periphery of a semiconductor wafer coated with resist, the intensity and time of exposure are adjusted depending on the adhesion of the resist film to the semiconductor wafer. Therefore, the exposure area at the periphery is divided concentrically, and areas near the center where the resist film has strong adhesion are irradiated strongly for a short period of time, while areas near the edges where the adhesion of the resist film is weak are irradiated with weak light for a long time. By irradiating the resist film, the resist film in the pattern forming area can be exposed to light without adversely affecting it. Furthermore, since the overall exposure time can be shortened, patterns can be formed with a high yield.
【０００７】[0007]
【実施例】本発明の周辺露光方法を適用した一実施例を
図面を参照して説明する。図１に示す周辺露光装置１は
、半導体ウェハ２を図示しない真空ポンプ等に接続され
て吸着固定する載置台３を備える。載置台３はモータ等
の回転機構４に接続され、半導体ウェハ２を回転できる
ようになっている。さらに周辺露光装置１は半導体ウェ
ハ２の位置を検知するセンサ５を備える。センサ５は投
光素子６と、投光素子６からの光を収束するレンズ７と
、レンズ７を通過した光を受光する受光素子８とから成
り、受光素子８から出力を入力する制御部９により半導
体ウェハ２の周辺を検知し、半導体ウェハ２の有無及び
オリフラ部１０を検知可能となっている。DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment to which the peripheral exposure method of the present invention is applied will be described with reference to the drawings. A peripheral exposure apparatus 1 shown in FIG. 1 includes a mounting table 3 that is connected to a vacuum pump (not shown) or the like and holds a semiconductor wafer 2 therein by suction. The mounting table 3 is connected to a rotation mechanism 4 such as a motor so that the semiconductor wafer 2 can be rotated. Furthermore, the peripheral exposure apparatus 1 includes a sensor 5 that detects the position of the semiconductor wafer 2. The sensor 5 consists of a light projecting element 6, a lens 7 that converges the light from the light projecting element 6, and a light receiving element 8 that receives the light that has passed through the lens 7, and a control section 9 that receives the output from the light receiving element 8. The area around the semiconductor wafer 2 can be detected, and the presence or absence of the semiconductor wafer 2 and the orientation flat portion 10 can be detected.
【０００８】このようなセンサ５により位置が検知され
る半導体ウェハ２の周辺部２１を露光する照射部１１は
、光源１２と光源１２からの光を周辺部２１に伝播する
光ファイバ等の光導管１３と、光導管１３からの光を収
光するレンズ機構１４と、光導管１３を支持して直径方
向（Ｘ方向）に移動可能なボールネジ等の水平移動機構
１５と、水平移動機構１５の移動方向と垂直な方向（Ｙ
方向）に水平移動機構１５を移動させる移動機構１６と
を備える。照射部１１及び載置台３は半導体ウェハ２の
位置センサ５からの情報により制御部９により制御され
るようになっている。The irradiation unit 11 that exposes the peripheral portion 21 of the semiconductor wafer 2 whose position is detected by such a sensor 5 includes a light source 12 and a light pipe such as an optical fiber that propagates the light from the light source 12 to the peripheral portion 21. 13, a lens mechanism 14 that collects light from the light pipe 13, a horizontal movement mechanism 15 such as a ball screw that supports the light pipe 13 and is movable in the diametrical direction (X direction), and movement of the horizontal movement mechanism 15. Direction perpendicular to the direction (Y
a moving mechanism 16 that moves the horizontal moving mechanism 15 in the direction). The irradiation unit 11 and the mounting table 3 are controlled by a control unit 9 based on information from a position sensor 5 of the semiconductor wafer 2.
【０００９】このような構成の周辺露光装置１を用いた
周辺露光方法を説明する。図示しないハンドリングアー
ム等の搬送機構により全面にレジスト膜２２が塗布され
た半導体ウェハ２を搬入し、載置台３の回転軸と同軸的
に位置決めして載置台３上に載置する。半導体ウェハ２
は載置台３に吸着等により固定される。そして回転機構
４により載置台３を回転させ位置センサ５を作動させる
。位置センサ５の投光素子６からの光を受光素子６が受
光し、制御部９により半導体ウェハ２の回転中心からの
距離を測定する。制御部９からの出力信号により水平移
動機構１５を動作させて光導管１３及びレンズ機構１４
を露光位置に移動させて半導体ウェハ２の周辺部２１を
露光する。この時、半導体ウェハ２の周辺部２１を図２
に示すように同心状に複数、例えば内側２１１及び外側
２１２に２分割し例えば周辺部２１の幅が２ｍｍならば
各１ｍｍに分割し、光導管１３からの光をまず高速回転
する半導体ウェハ２の内側２１１に例えば照度１０００
ｍＷ／ｃｍ２で９秒照射する。この時、照射強度が強い
とＮ２等の気体が発生することがあるが、半導体ウェハ
２の周辺部２１における半導体ウェハ２とレジスト膜２
２との密着強度は内側２１１の領域が外側２１２領域よ
りも相対的に強いことが確認されており、この実施例の
場合、内側２１１を照度１０００ｍＷ／ｃｍ２で光照射
した時、発生した気体はレジスト膜２２にダメージを与
えることなく大気中に発散し、従ってレジスト膜２２が
割れてレンズ機構１４を汚したり、パーテイクルとなっ
てレジスト膜２２に付着したり、また剥離することはな
い。そのためパターン形成部のレジスト膜を剥離したり
悪影響を及ぼすことはない。次に制御部９から水平移動
機構１５を作動させ光導管１３の位置を外側２１２に設
定する。
外側２１２は内側２１１を照射する照度よりも相対的に
少ない照度例えば３００ｍＷで３０秒照射するようにす
る。この時も内側２１１と同様に、照射強度が強いとＮ
２等の気体が発生することがあるが、内側２１１より密
着強度の弱い外側２１２においても照射強度を内側より
弱くして照射すればレジスト膜２２を剥離することはな
く、周辺部２１の中で内側と外側で照度を変えて露光す
る。レジスト膜の密着強度の強い内側２１１では照度を
強く短時間で照射することができ、密着強度の弱い外側
２１２では照度を下げて長時間照射するようにできる。
このように外側と内側で照射強度を調整すれば適当な強
度で効率的に照射できるので、光照度が強すぎてレジス
ト膜が剥離したりすることがなく、また従来の周辺露光
方法によれば露光に１分必要であったところ２／３に短
縮することができる。またオリフラ部９の部分は、周辺
部２１の外側２１２及び内側２１１の何れの場合も位置
センサからの検知により移動機構１６を作動して自動的
に行うことができる。A peripheral exposure method using the peripheral exposure device 1 having such a configuration will be explained. A semiconductor wafer 2 whose entire surface is coated with a resist film 22 is carried in by a transport mechanism such as a handling arm (not shown), positioned coaxially with the rotation axis of the mounting table 3, and placed on the mounting table 3. semiconductor wafer 2
is fixed to the mounting table 3 by suction or the like. Then, the mounting table 3 is rotated by the rotation mechanism 4, and the position sensor 5 is activated. The light receiving element 6 receives light from the light emitting element 6 of the position sensor 5, and the distance from the center of rotation of the semiconductor wafer 2 is measured by the control unit 9. The horizontal movement mechanism 15 is operated by the output signal from the control section 9 to move the light pipe 13 and the lens mechanism 14.
is moved to the exposure position and the peripheral portion 21 of the semiconductor wafer 2 is exposed. At this time, the peripheral part 21 of the semiconductor wafer 2 is shown in FIG.
As shown in FIG. 2, the light from the light pipe 13 is first divided concentrically into two parts, an inner part 211 and an outer part 212, and if the width of the peripheral part 21 is 2 mm, each part is divided into 1 mm parts. For example, the illuminance is 1000 on the inside 211.
Irradiate for 9 seconds at mW/cm2. At this time, if the irradiation intensity is strong, gas such as N2 may be generated.
It has been confirmed that the adhesion strength between the inner side 211 and the outer 212 area is relatively stronger than that of the outer 212 area. It is dispersed into the atmosphere without damaging the resist film 22, so that the resist film 22 does not crack and contaminate the lens mechanism 14, or become particles that adhere to the resist film 22, or peel off. Therefore, the resist film in the pattern forming area will not be peeled off or have any adverse effects. Next, the horizontal movement mechanism 15 is operated from the control unit 9 to set the position of the light pipe 13 to the outside 212. The outside 212 is irradiated for 30 seconds at a relatively lower illuminance than the inside 211, for example, 300 mW. At this time, as well as inside 211, if the irradiation intensity is strong, N
However, if the irradiation intensity is lower than that of the inner side even on the outer side 212 where the adhesion strength is weaker than the inner side 211, the resist film 22 will not be peeled off, and it will not peel off in the peripheral area 21. Expose by changing the illuminance on the inside and outside. The inner side 211, where the adhesion strength of the resist film is strong, can be irradiated with a strong illuminance for a short time, and the outer side 212, where the adhesion strength is weak, can be irradiated with a lower illuminance for a long time. By adjusting the irradiation intensity on the outside and inside in this way, it is possible to irradiate efficiently with an appropriate intensity, so the resist film does not peel off due to the light irradiance being too strong, and the conventional peripheral exposure method does not allow exposure. It used to take 1 minute to do this, but it can be reduced to 2/3. Further, the orientation flat portion 9 can be automatically moved by operating the moving mechanism 16 based on detection from the position sensor in both the outer side 212 and inner side 211 of the peripheral portion 21.
【００１０】このように周辺を露光された半導体ウェハ
２は現像されて周辺部の余剰のレジスト膜が除去される
のでゴミ、パーティクルの発生が生じることがない。上
記説明では、周辺部を２分割する方法を述べたが、レジ
スト膜の密着強度の状態に応じてもっと照射強度を細分
化して露光を行ってもよい。[0010] The semiconductor wafer 2 whose periphery has been exposed in this way is developed and the excess resist film on the periphery is removed, so that no dust or particles are generated. In the above description, the method of dividing the peripheral area into two parts has been described, but the exposure may be performed by dividing the irradiation intensity into smaller parts depending on the state of the adhesion strength of the resist film.
【００１１】[0011]
【発明の効果】以上の説明からも明らかなように、本発
明の周辺露光方法によれば、パターン形成部のレジスト
膜に悪影響を及ぼすことなく半導体ウェハの周辺部のレ
ジスト膜の密着強度に応じて露光を行うため高品位なパ
ターン成形を行うことができる。また、露光時間を短縮
できるため、歩留りの良い製造を行うことができる。Effects of the Invention As is clear from the above explanation, the peripheral exposure method of the present invention can improve the adhesion strength of the resist film in the peripheral area of the semiconductor wafer without adversely affecting the resist film in the pattern forming area. Since the exposure is carried out using the same method, high-quality pattern formation can be performed. Furthermore, since the exposure time can be shortened, manufacturing with high yield can be performed.
【図１】本発明の周辺露光方法を適用した一実施例の構
成図FIG. 1 is a configuration diagram of an embodiment to which the peripheral exposure method of the present invention is applied.
【図２】図１に示す一実施例による露光方法を説明する
図FIG. 2 is a diagram illustrating the exposure method according to the embodiment shown in FIG. 1;
１・・・・・・周辺露光装置 ２・・・・・・半導体ウェハ ２１・・・・・周辺部 ２２・・・・・レジスト膜 1... Peripheral exposure device 2... Semiconductor wafer 21...peripheral area 22...Resist film
Claims (1)
移動して前記半導体ウェハの周辺部に塗布されたレジス
ト膜を露光する露光装置において、前記周辺部の露光領
域を同心状に複数に分割し、前記同心円の内側と、外側
とをそれぞれ前記光の照射強度及び照射時間を調整し、
周辺程照射強度を相対的に弱く露光することを特徴とす
る周辺露光方法。1. An exposure apparatus that exposes a resist film coated on a peripheral portion of the semiconductor wafer by relatively moving light from a semiconductor wafer and a light source, wherein a plurality of concentric exposure areas are formed on the peripheral portion of the semiconductor wafer. and adjusting the irradiation intensity and irradiation time of the light on the inside and outside of the concentric circles, respectively,
A periphery exposure method characterized by exposing the irradiation intensity to a relatively lower irradiation intensity toward the periphery.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1973091A JP2845629B2 (en) | 1991-02-13 | 1991-02-13 | Exposure method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1973091A JP2845629B2 (en) | 1991-02-13 | 1991-02-13 | Exposure method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04258113A true JPH04258113A (en) | 1992-09-14 |
| JP2845629B2 JP2845629B2 (en) | 1999-01-13 |
Family
ID=12007434
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1973091A Expired - Fee Related JP2845629B2 (en) | 1991-02-13 | 1991-02-13 | Exposure method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2845629B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016072543A (en) * | 2014-10-01 | 2016-05-09 | Ｈｏｙａ Ｃａｎｄｅｏ Ｏｐｔｒｏｎｉｃｓ株式会社 | Light radiation device for periphery exposure device |
-
1991
- 1991-02-13 JP JP1973091A patent/JP2845629B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016072543A (en) * | 2014-10-01 | 2016-05-09 | Ｈｏｙａ Ｃａｎｄｅｏ Ｏｐｔｒｏｎｉｃｓ株式会社 | Light radiation device for periphery exposure device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2845629B2 (en) | 1999-01-13 |
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