JPH02230672A - 電極上への導電性粒子の配置方法 - Google Patents

電極上への導電性粒子の配置方法

Info

Publication number
JPH02230672A
JPH02230672A JP1050904A JP5090489A JPH02230672A JP H02230672 A JPH02230672 A JP H02230672A JP 1050904 A JP1050904 A JP 1050904A JP 5090489 A JP5090489 A JP 5090489A JP H02230672 A JPH02230672 A JP H02230672A
Authority
JP
Japan
Prior art keywords
electrode
conductive particles
layer
resin
resin layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1050904A
Other languages
English (en)
Other versions
JPH0740496B2 (ja
Inventor
Koji Matsubara
浩司 松原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP5090489A priority Critical patent/JPH0740496B2/ja
Priority to US07/485,745 priority patent/US5034245A/en
Priority to EP19900302214 priority patent/EP0385787B1/en
Priority to DE69020009T priority patent/DE69020009T2/de
Publication of JPH02230672A publication Critical patent/JPH02230672A/ja
Publication of JPH0740496B2 publication Critical patent/JPH0740496B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
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    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13452—Conductors connecting driver circuitry and terminals of panels
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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、たとえば半導体集８１回路基板、プリント基
板、ガラス基板、フレキシブル基板、あるいはセラミッ
ク基板などの回路基板の電極を相互に圧接によって電気
的に接続するために好適に実施される電極上への導電性
粒子の配置方法に関する． 従来の技術 従来、回路基板同士の電極を電気的に接続する方法とし
ては、通常、半田付けが行われている。
半田付けによる方法では、一方の回路基板の電極上にめ
っき法や印刷法などによって半田層を形成し、この半田
層を２００〜２５０℃程度の高温に加熱し、溶融して他
方の回路基板の電極に接続する。したがって電極材料と
して゛、予めＡｕ．Ｃｕ、Ｎｉなどの親半田金属を用い
る必要がある。
このような半田付けという高温処理による回路基板など
への熱的な弊害や、親半田金属を用いることによるコス
ト高を回避するために、最近では、接着剤中に導電性粒
子を分散させて成る異方性導電シートを用いる傾向にあ
る。異方性導電シートは、このシートに加えられる圧力
方向に対してのみ・導電性を示し、それ以外の方向に対
しては非導電性であるという異方性を利用し、接続した
い電極や端子などの間にこの異方性導電シートを介在し
、電極間に介在したシーｌ・部分をシー１・厚み方向に
わたって加圧および加熱して両電極間の電気的接続を行
う。特に、配線材料としてＩＴＯ（Ｉｎｄｉｕｍ　Ｔｉ
ｎ　Ｏｘｉｄｅ）を使用する液晶表示板の端子の接続に
は、その接続の容易性および熱的条件の点から異方性導
電シー１〜が多く用いられている．発明が解決しようと
する課題 上記した異方性導電シートは、樹脂中に導電性粒子を分
散させた構成である．したがって隣接端子間のピッチ幅
が微細となった場合、シート中に存在する導電性粒子に
起因して電気的短絡が生じ、微小ピッチ幅での接続が困
難であるという問題点がある． 本発明の目的は、上記問題点を解決して、接続すべき電
極上にのみ導電性の粒子を配置することができ、したが
って電極の微細化に対応することができるとともに、接
続の信頼性を向上することができる電極上への導電性粒
子の配置方法をｔｉ供することである． 課題を解決するための手段 本発明は、電極が形成された回路基板」二に、硬化が可
能であるか、または、硬化およびその後の再軟化が可能
であるかのいずれか一方の特性に選ばれる樹脂材料を塗
布して樹脂層を形成し、前記電極上の樹脂材料のみが軟
化した状態で、この軟化した樹脂層の屑厚より大径の導
電性の粒子を前記回路基板」二に散布して、電極上の樹
脂層に付着させ、電極上以外に付薯した前記粒子は除去
するようにしたことを特徴とする電極上への導電性粒子
の配置方法である． 作　　用 本発明に従えば、電極を含む回路基板上には樹脂材料が
塗布されて樹脂層が形成される．この樹脂材料は、硬化
が可能であるか、または、硬化およびその後の再軟化が
可能であるかのいずれが−方の特性に選ばれる．この回
路基板上の樹脂層を、電極上の樹脂材料のみが軟化した
状態とし、この軟化した樹脂層にその層厚より大径の導
電性粒子を散布して付着させるとともに、電極上以外に
付着した粒子は除去する．ＩＫ極上の樹脂材料のみが軟
化した状態にあるので、散布された導電性粒子は容易に
電極上の樹脂層に付着し、１！極上以外に付着した導電
性粒子は除去されて、導電性粒子は選択的に電極上へ配
置される． したがってこの電極上へ配置された導電性粒子を樹脂層
に埋設して保持し、突起した電極を形成することができ
る．これによって回路基板上に突起した電極を＠栖に形
成することができ、ｔ極の微細化に対応して高い信頼性
で他の回路基板に接続することができる回路基板が構成
される。
また、両回路基板の少なくとも一方の回路基板に前記突
起した電極を形成して圧接する場合に、両回路基板間に
比較的低温度で硬化する接着剤を充填してこの接着剤を
硬化させれば、前記突起した電極から成る電気的な接続
部分が樹脂によって封止され、接続の信頼性がさらに向
上する．実施例 第１図は、本発明の一実施例である半導体装置６の横成
を示す断面図である．半導体装置６は、基板１と、この
基板１上に予め形成される電極２と、接着Ｍ　Ｍ　８　
ａと、導電性粒子５とを含む．半導体装置６の電極２と
しては、通常、ＡＩにＳｔを１％程度添加したＡＩ−　
Ｓ　ｉが使用されている．ＡＩ−Ｓｔは、その表面にご
く薄いアルミナなどの絶縁性の酸化膜を形成し、接続時
の抵抗が高くなり易い．この接続抵抗を低減するために
、ＡＩ・Ｓｔの電極２上にＣｒ，Ｔｉ，Ｗ．Ｃｕ，Ｎｉ
、Ａｕ．Ａｇ，ＰｔおよびＰ　ｄなどのうちのいずれか
の金属、あるいはこれら金属の合金を材料として、１層
もしくは２層以上の金属層を被覆するようにしてもよい
． 被覆の方法としては５上記金属を半導体装置６」二にス
パッタリング法あるいはエレクトロンビーム法などによ
って蒸着し、その後フォトリソグラフィ法によってパタ
ーン形成して、電ｆｉ！２上に選択的に金属層を被覆す
る．あるいは、ＡＩ−Ｓｉから成る電極２上には、Ｎｉ
は直接無電解めっきできないので、まずＰ　ｄを電極２
上に選゛択的に無電解めっきし、その後、Ｐｄに対して
Ｎ１を無電解めっきによって置換し、電ｆｉ２上にＮｉ
の金属層を被覆することもできる． 基板１上の電極２が形成されていない領域には表面保護
層３が形成されている．この表面保護層３は、たとえば
ＳｉＮ，Ｓｉｎ，，あるいはポリイミドなどから成る． 半導体装１ｊ６のさらに第１図上層′には、接着剤Ｍ　
８　ａが形成されている．この接着剤７１１８　ａは、
後述する方法によって、導電性粒子５の一端が電極２の
表面に接触し、他端が接着剤Ｍ８ａから突出した状態で
硬化される。接着剤屑８は、たとえばアクリル系制Ｌポ
リエステル系樹脂、ウレタン系樹脂、エボキシ系樹脂、
あるいはシリコーン系樹脂などの各種合成樹脂を使用す
ることができる． また、導電性粒子５としては、Ａｕ，Ａｇ、Ｐｔ．Ｃｕ
．Ｎｉ，Ｃ、Ｉ　ｎ．Ｓｎ．ＰｂおよびＰｄなどの金属
あるいはこれらの２種類以上の合金を使用することがで
きる．また第１図に示したように、高分子材料か、らな
る弾性粒子５ｂの表面に導電性材料からなる被覆屑５ａ
を形成した導電性粒子５を用いてもよい．この場合、弾
性粒子５ｂとしてはポリイミド系樹脂、エボキシ系樹脂
、アクリル系樹脂などの合成樹脂、およびシリコーンゴ
ム、ウレタンゴムなどの合成ゴムが使用できる． また被覆層５ａの導電性材料としては、Ａ　Ｉ１、Ａｇ
，Ｐｔ．Ｃｕ．Ｎｉ＝　Ｃ．Ｉｎ．Ｓｎ，ＰｂおよびＰ
ｄなどの金属、あるいはこれらの合金を１層もしくは２
層以上として使用することができる．２層以上で被覆層
５ａを形成する場合には、弾性粒子５ｂへの密着性に優
れるたとえばＮｉなとの金属層を先に形成し、さらにそ
のような金属の酸化防止のために、Ａｕなとの金属層を
被覆することが好ましい．被覆の方法としては、スパッ
タリング法、エレク）〜ロンビーム法などに１よる蒸着
法、あるいは無電解めっきなどの方法を用いることがで
きる． 第２図は、第１図に示した半導体装置６を製造する工程
を説明する断面図である．第２図（】）に示されるよう
に、予め電極２および表面保護層３が形成されている基
板１において、この電極２および表面保護層３の表面に
、たとえばスビンコートあるいはロールコートなどの方
法によって、たとえば光硬化性樹脂を全面に塗布し、樹
脂層８を形成する． 樹脂層８とＩ−では、たどえばアクリル系やポリエステ
ル系の熱可塑性樹脂を基材としてそれに光硬化剤を混入
するか、または基材に光反応性の基を付加したもの、あ
るいは基材として光硬化性樹脂を用い、それに熱可塑性
樹脂を混入したものなどを用いることができる。
樹脂層８が形成された基板１に対して、第２図（２）に
示されるように、マスク９を介して紫外線２０を照射ず
る．マスク９には、紫外線２０を遮断する遮断部９ａと
紫外線２０が通過可能な透孔９ｂとが形成されている．
基板１の電極２が形成された領域とマスク９の透孔９ｂ
とが位置合わせされ、紫外線２０が照射される６これに
よって電極２が形成された領域の樹脂層８ａのみが硬化
され、紫外線２０の照射が行われなかった樹脂屑８ｂは
未硬化の状態に残される。
次に、このように選択的に紫外線２０が照射された樹脂
層８に対して溶剤を用いて現像を行う。
溶剤としては、アセトンやメチルエチルケトンなどのケ
トン類およびアルコール類が使用される．一般に、硬化
した樹脂は溶剤に対して溶け難くなるので、現像は容易
である。
すなわち、紫外線２０が照射されて硬化した接着剤層８
ａにおいては、紫外線２０に基づく架橋反応などが生じ
ており、溶剤に対しては不溶性または難溶性である．一
方、紫外線２０が照射されずに未硬化の接着剤７１８　
１）においては、前記反応は生じておらず、溶剤によっ
て容易に溶出し除去される９これによって電極２上にの
み接着剤層８ａを形成することができる。
次に、基板１を５０〜２００℃程度にまで加熱し、硬化
した接着剤層８ａを熱によって再軟化させる，この状態
で、第２図（３》に示されるように、前記導電性粒子５
を散布し、電極２」二の樹脂屑８ａに付着させる．この
とき熱軟化した樹脂層８ａは粘着性を有しており、これ
によって導電性粒子５を吸着する９一方、接薯剤屑８ａ
が形成されていない表面保護層３上などでは、導電性粒
子５が単に付着した状態である．したがって電極２以外
の他の領域に静電気力などによって付着した不要な導電
性粒子５は、エアブローによって、またははけなどを使
用して容易に除去することができる。
上述のようにして電極２上の樹脂７１１　８　ａに配置
された導電性粒子５は、導電性粒子５の一端が電掻２表
面に接触し、その他端は樹脂層８ａから突出するように
樹脂Ｍ８ａに埋設される。あるいは、導電性粒子５が電
極上に配置された半導体装置６を、他の回路基板に圧接
によって接続する際に、両回路基板に加えられた圧力に
よって導電性粒子５が樹脂Ｍ８ａを貫通して、その一端
が電極２に接触するようにしてもよい．また導電性粒子
５を介して両回路基板の相互に対応する電極が接続され
るように加圧する際に、予め両回路基板間に接着剤を充
填して硬化させるようにしてもよい．これによって電気
的な接続部分が樹脂によって封止され、接続の信頼性が
向上する． 第３図は、本発明の半導体装置６が実装された液晶表示
装置１０の断面図である．また第４図は第３図の切断面
線■一■から見た一部断面図であり、第５図は第４図の
細部を詳細に示す拡大断面図である． 第３図を参照して、表面に電極１３および対向電極】６
がそれぞれ形成された一対の液晶表示板１１．１２は、
シール樹脂１５′を介して貼りｈわされており、その間
に液晶１７が封入されている。
液晶表示装置１０において、電極１３は液晶表示板１１
上を図面右方に延び、液晶表示装２１０の表示駆動を行
うために実装された半導体装置６と導電性粒子５を介し
て接続されている．また、半導体装置６と液晶表示板１
１との接続部分は接着剤１４によって封止されている． 半導体装置６は、シリコンあるいはガリウムヒ素などの
基板上に拡散層（図示せず）が形成され、これによって
多数のトランジスタやダイオードなどが構成されて液晶
表示装置１０の表示駆動を行う機能を有する。半導体装
置６は、前述した本発明に従って、電極２上に導電性粒
子５が樹脂層８ａによって埋設して保持されている．一
方、液晶表示板１１の電極１３は、たとえばソーダガラ
スなどの表面上にＩ　Ｔ　Ｏ　（　Ｉｎｄｉｕｍ　Ｔｉ
ｎ　Ｏｘｉｄｅ）　．あるいは接触抵抗を低減するため
にＮｉでめっきしたＩＴＯなどが形成されて成り、通常
厚みは５０〜２００ｎｍ程度である。
第６図に示されるように、半導体装置６の導電性粒子５
から成る突起電極が形成された表面ど、液晶表示板１１
の電極１３が形成された表面とは対向され、導電性粒子
５と電極１３とが位置合わせされる．位置合わぜされた
基板１，１１間には、接着剤１４が充填され、半導体装
Ｗ６は液晶表示板１１に対して導電性粒子５および接着
剤１４を介して矢符１９方向に、電極２，１３間が第５
図示の所定の間隔ｌ１となるまで加圧される。この加圧
状態において接着剤１４を硬化させることによって、半
導体装Ｗ．６が液晶表示板１１に実装される。
接着剤１４としては，たとえば反応硬化性、嫌気硬化性
、熱硬化性、光硬化性などの各種接着剤を使用すること
ができる．特に本実施例においては，液晶表示板１１が
透光性材料であるガラスから成るので、接着剤１４には
、高速接合可能な光硬化性接着剤を使用することが有効
である．以上説明したように、本発明に従って配置され
た導電性粒子５を有する半導体装置６は、第２図の液晶
表示装Ｗ．１０のように、他の回路基板に圧接した状態
で、予め両回路基板間に充填された接着剤を硬化して回
路基板相互を接続し、実装することができる． また上記実施例においては、半導体装置６上に導電性杓
子５を配置する場合について説明したけれども、半導体
装置に限定する必要はなく、他の回路基板上に導電性粒
子を配置して圧接する場今についても本発明は実施する
ことができる．発明の効果 以上説明したように本発明によれば、簡単な方法によっ
て回路基板の電極−］こに導電性粒子を配置することが
できる．これによって電極の微細化に対応して、この導
電性粒子によって突起した電極が形成された回路基板と
他の回路基板とを圧接によって接続する場合の信頼性が
向Ｊ二する．したがって生産性が向上し、コスｌ・を低
減することができる．
【図面の簡単な説明】
第１図は本発明の一実施例の半導体装置６の断面図、第
２図は第１図示の半導体装置６の製造工程を説明する断
面図、第３図は半導体装Ｗ．６が実装された液晶表示装
置１０の断面図、第４図は第３図の切断面線■−ＩＶか
ら見た断面図、第５図は第４図の一部拡大断面図、第６
図は圧接によって第４図示の接続を得るための断面図で
ある。 １・・・基板、２，１３．１６・・・電極、５・・・導
電性粒子、６・・半導体装置、８・・・樹脂層、１０・
・・液晶表示装置，１９・加圧方向、２０・・・紫外線
代理人　　弁理士　西教　圭一郎 亀 図 第 図

Claims (1)

  1. 【特許請求の範囲】 電極が形成された回路基板上に、硬化が可能であるか、
    または、硬化およびその後の再軟化が可能であるかのい
    ずれか一方の特性に選ばれる樹脂材料を塗布して樹脂層
    を形成し、 前記電極上の樹脂材料のみが軟化した状態で、この軟化
    した樹脂層の層厚より大径の導電性の粒子を前記回路基
    板上に散布して、電極上の樹脂層に付着させ、電極上以
    外に付着した前記粒子は除去するようにしたことを特徴
    とする電極上への導電性粒子の配置方法。
JP5090489A 1989-03-01 1989-03-01 電極上への導電性粒子の配置方法 Expired - Fee Related JPH0740496B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP5090489A JPH0740496B2 (ja) 1989-03-01 1989-03-01 電極上への導電性粒子の配置方法
US07/485,745 US5034245A (en) 1989-03-01 1990-02-27 Method of producing connection electrodes
EP19900302214 EP0385787B1 (en) 1989-03-01 1990-03-01 Method of producing connection electrodes
DE69020009T DE69020009T2 (de) 1989-03-01 1990-03-01 Verfahren zum Herstellen von Verbindungselektroden.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5090489A JPH0740496B2 (ja) 1989-03-01 1989-03-01 電極上への導電性粒子の配置方法

Publications (2)

Publication Number Publication Date
JPH02230672A true JPH02230672A (ja) 1990-09-13
JPH0740496B2 JPH0740496B2 (ja) 1995-05-01

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Country Link
US (1) US5034245A (ja)
EP (1) EP0385787B1 (ja)
JP (1) JPH0740496B2 (ja)
DE (1) DE69020009T2 (ja)

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Also Published As

Publication number Publication date
JPH0740496B2 (ja) 1995-05-01
EP0385787B1 (en) 1995-06-14
EP0385787A3 (en) 1990-10-31
US5034245A (en) 1991-07-23
DE69020009D1 (de) 1995-07-20
DE69020009T2 (de) 1995-11-23
EP0385787A2 (en) 1990-09-05

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