JPH0521519A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPH0521519A
JPH0521519A JP3175113A JP17511391A JPH0521519A JP H0521519 A JPH0521519 A JP H0521519A JP 3175113 A JP3175113 A JP 3175113A JP 17511391 A JP17511391 A JP 17511391A JP H0521519 A JPH0521519 A JP H0521519A
Authority
JP
Japan
Prior art keywords
electrodes
chip
substrate
wiring
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP3175113A
Other languages
English (en)
Inventor
Hisashi Shin
久司 新
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP3175113A priority Critical patent/JPH0521519A/ja
Priority to DE4223280A priority patent/DE4223280A1/de
Publication of JPH0521519A publication Critical patent/JPH0521519A/ja
Withdrawn legal-status Critical Current

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Abstract

(57)【要約】 【構成】 チップ電極７と基板電極１１との間に応力吸
収球１３が配置されている。応力吸収球１３は高分子球
の表面にＰｂ−Ｓｎ共晶ハンダをメッキしたものであ
る。Ｐｂ−Ｓｎ共晶ハンダと電極１１、７とは拡散接合
している。 【効果】 熱応力が発生しても応力吸収球１３の高分子
球が吸収するので、チップ電極７と基板電極１１との接
続が不良となることはない。また、拡散接合で接続され
ているので電気抵抗を下げることができる。

Description

【発明の詳細な説明】
【０００１】
【産業上の利用分野】この発明は半導体装置に関するも
のであり、特にフェイスダウンボンディングによって接
続されている部品を有する半導体装置に関するものであ
る。
【０００２】
【従来の技術】従来、各種の配線基板上に半導体ベアチ
ップを搭載する技術としてＩＢＭ社によって開発された
ハンダバンプを用いたものがよく知られている（いわゆ
るＣ４接続法、Ｐ．Ａ．Ｔｏｔｔａ ａｎｄ Ｒ．Ｐ．
Ｓｏｐｈｅｒ：ＩＢＭ Ｊｏｕｒｎａｌ ｏｆ Ｒｅｓ
ｅａｒｃｈ ａｎｄ Ｄｅｖｅｌｏｐｍｅｎｔ，Ｖｏ
ｌ．１３（１９６９）ｐ．２２６）。この技術を図３を
用いて説明する。
【０００３】半導体装置１は半導体チップ３と配線基板
５とを備えている。半導体チップ３には電子回路が形成
されており、この電子回路はチップ電極７と接続されて
いる。配線基板５には配線が形成されており、この配線
は基板電極１１と接続されている。
【０００４】チップ電極７と基板電極１１とはハンダバ
ンプ９によって接続されている。すなわち、半導体チッ
プ３は配線基板５にフェイスダウンボンディングによっ
て接続されている。
【０００５】しかし、この技術では温度変化が激しい条
件下で使用した場合、チップ電極７と基板電極１１との
接続が不良になることが多い。すなわち、半導体チップ
３、配線基板５、ハンダバンプ９それぞれの線膨張係数
やヤング率の差に起因する熱応力のため、ハンダバンプ
９が破損したり、ハンダバンプ９と電極７、１１との接
続が外れることがあるのである。
【０００６】この欠点を解決する１つの技術として、半
導体チップ３と配線基板５との界面にハンダバンプ９と
ほぼ等しい線膨張係数をもつエポキシ樹脂を封入するこ
とが考えられる。このようにすれば熱応力はハンダバン
プ９とエポキシ樹脂とに作用するので、ハンダバンプ９
に作用する熱応力が小さくなる。しかし、このようなエ
ポキシ樹脂を開発する期間や材料コストの点で不利であ
る。
【０００７】接続が不良になるという欠点を解消する他
の技術として、Ｍ．Ｍａｓｕｄａｅｔ ａｌ：Ｐｒｏｃ
ｅｅｄｉｎｇｓ ｏｆ １９８９ Ｉｎｔｅｒｎａｔｉ
ｏｎａｌ Ｅｌｅｃｔｒｏｎｉｃｓ Ｍａｎｕｆａｃｔ
ｕｒｉｎｇ Ｔｅｃｈｎｏｌｏｇｙ Ｓｙｍｐｏｓｉｕ
ｍ（１９８９）ｐ．５７がある。この技術を図４、図５
を用いて説明する。
【０００８】この技術はチップ電極７と基板電極１１と
の間に応力吸収球１３を介在させている。応力吸収球１
３は図５に示すように、弾性を有する高分子球１５の表
面にＡｕメッキ１７を施したものである。熱応力が発生
しても高分子球１５が吸収してくれるので、チップ電極
７と基板電極１１との接続が不良になることはない。
【０００９】
【発明が解決しようとする課題】しかし、図４に示す技
術は応力吸収球１３と電極７、１１とを接着剤で加圧接
触させているだけなので、接続部の電気抵抗値が０．１
〜１Ωと大きくなる欠点を有している。
【００１０】この発明は係る従来の問題点を解決するた
めになされたものである。この発明の目的は、熱応力が
原因で電極部の接続が不良になることなく、かつ電極間
部の電気抵抗値を下げることができる半導体装置を提供
することである。
【００１１】
【課題を解決するための手段】この発明に従った半導体
装置はフェイスダウンボンディングによって接続されて
いる部品を有する半導体装置であって、電子回路および
電子回路と接続した電極が形成された第１基板と、配線
が形成された第２基板と、電極と配線との間に位置し、
第１基板の線膨張係数と第２基板の線膨張係数との差が
原因で生じる応力を吸収する応力吸収部材と、を備えて
いる。応力吸収部材は表面に導電部材を有し、導電部材
は電極および配線と拡散接合している。
【００１２】
【作用】この発明に従った半導体装置は、電極と配線と
の間に第１基板の線膨張係数と第２基板の線膨張係数と
の差が原因で生じる応力を吸収する応力吸収部材があ
る。このため電極と配線との接続部に熱応力が作用して
も応力吸収部材が熱応力を吸収するので、接続が不良に
なることはない。
【００１３】また、応力吸収部材は表面に導電部材を有
し、導電部材は電極および配線と拡散接合しているの
で、第１，第２基板を接着剤で加圧接触させる場合に比
べ接続部の電気抵抗を下げることができる。
【００１４】なお、ここでいう第２基板には電子回路を
形成した基板および配線回路を形成した基板が含まれ
る。また、配線には電極も含まれる。
【００１５】
【実施例】図１はこの発明に従った半導体装置の一実施
例の断面図である。半導体装置１は半導体チップ３と配
線基板５とを備えている。半導体チップ３には電子回路
が形成されており、この電子回路はチップ電極７と接続
されている。配線基板５には配線が形成されており、こ
の配線は基板電極１１と接続されている。
【００１６】チップ電極７は最表層から順にＡｕ、Ｃ
ｕ、Ｎｉなどの親ハンダ金属層、Ｔｉ−Ｗ、Ｔｉ、Ｃｒ
のなどの拡散防止金属層、Ａｌ−Ｓｉ、Ａｌ−Ｓｉ−Ｃ
ｕなどの金属層からなる。金属層が半導体チップ３に形
成された配線層と接続している。拡散防止金属層は、親
ハンダ金属層中の原子が電子回路に拡散するのを防ぐ層
である。基板電極１１はＡｕ、Ｃｕ、Ｎｉなどの親ハン
ダ金属である。親ハンダ金属で配線が構成されている。
配線基板５には電子回路が形成されていないので拡散防
止金属層は形成されていない。
【００１７】応力吸収球１３は図２に示すようにスチレ
ンやジビニルベンゼンなどを重合させた高分子球１５の
表面にＰｂ−Ｓｎ共晶ハンダ１９をメッキしたものであ
る。ハンダのメッキ方法としては、たとえば河内他：第
５回プリント回路学会学術講演会論文集に記載されてい
る。熱応力が発生しても高分子球１５が吸収してくれる
のでチップ電極７と基板電極１１との接続が不良になる
ことはない。
【００１８】Ｐｂ−Ｓｎ共晶ハンダ１９と電極７、１１
の親ハンダ金属とが拡散接合している。したがって、チ
ップ電極７と基板電極１１との接続部の電気抵抗を下げ
ることができる。ハンダの材料によって電極７、１１の
親ハンダ金属を変える必要がある。表１はハイブリッド
マイクロエレクトロニクス用材料すなわちここでいう親
ハンダ金属とハンダの成分元素との関係を示すものであ
る。表の縦の金属と表の横の金属との組合わせのうち、
合金組成の記載がある組合わせを用いる。この表は、ハ
イブリッドマイクロエレクトロニクス協会（編集）：
「ハイブリッドマイクロエレクトロニクスハンドブッ
ク」（１９８９・工業調査会）ｐ．７９０から引用した
ものである。
【００１９】
【表１】
【００２０】応力吸収球１３は基板電極１１またはチッ
プ電極７上に配置する必要があるが、応力吸収球１３を
半導体チップ３のうちチップ電極７上に選択的に配置す
る技術として、たとえば次の３つがある。回路基板５の
うち基板電極１１上に選択的に配置する場合も同じであ
る。
【００２１】 先に従来例で挙げたＭ．Ｍａｓｕｄａ
ｅｔ ａｌ：Ｐｒｏｃｅｅｄｉｎｇｓ ｏｆ １９８
９ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｅｌｅｃｔｒｏｎｉ
ｃｓＭａｎｕｆａｃｔｕｒｉｎｇ Ｔｅｃｈｎｏｌｏｇ
ｙ Ｓｙｍｐｏｓｉｕｍ（１９８９）ｐ．５７に示され
ているように熱硬化性樹脂や光硬化性樹脂の中に応力吸
収球１３を混ぜたものを印刷法によって電極１１上にだ
け供給する。この場合、熱硬化性樹脂あるいは光硬化性
樹脂は半導体チップ３と配線基板５との界面の封止の役
割もする。
【００２２】 特開平０１−２２７４４４，特開平０
２−２３６２３に示されているように、予め半導体ウエ
ハの表面に塗布した応力吸収球１３の直径よりも薄い膜
厚の光硬化性樹脂層にマスク露光を施し、照射部と非照
射部とへの光硬化性樹脂の粘着力の差を利用してチップ
電極７上にだけ応力吸収球１３を供給する。この場合、
光硬化性樹脂は半導体チップ３と配線基板５との界面の
封止の役割もする。
【００２３】 Ｍ．Ｋｉｎｏｓｈｉｔａ ｅｔ ａ
ｌ：Ｐｒｏｃｅｅｄｉｎｇｓ ｏｆｔｈｅ ６ｔｈ Ｉ
ｎｔｅｒｎａｔｉｏｎａｌ Ｍｉｃｒｏｅｌｅｃｔｒｏ
ｎｉｃｓ Ｓｙｍｐｏｓｉｕｍ（１９９０）ｐ．２４３
に示されているようにメタルマスクを用いてチップ電極
７上だけに応力吸収球１３を供給する。
【００２４】たとえば直径８０μｍの電極をもつ半導体
チップ３にの方法を採用して直径１０μｍの応力吸収
球１３をチップ電極７上に配置した場合、約３０〜４０
個の応力吸収球１３を配置することができた。この半導
体チップ３と配線基板５とをフリップチップボンダーに
より加圧・加熱接続すると図１に示す半導体装置１が得
られた。加圧・加熱条件は、２００個のチップ電極７を
もつ１３ｍｍ×６ｍｍの半導体チップ３の場合、６Ｋｇ
ｆ、２００℃で適当である。
【００２５】この実施例では配線基板に半導体チップを
フェイスダウンボンディングによって接続していれば、
半導体チップ同士をフェイスダウンボンディングによっ
て接続してもよい。
【００２６】また、高分子球は任意の大きさにできるの
で、電極とほぼ同じ大きさの高分子球も用いることがで
きる。
【００２７】さらに、高分子球はその重合度を変えるこ
とにより弾性係数を変えることができるので、ボンディ
ング時に必要な加圧力に応じて最適なる弾性係数をもつ
高分子球を採用すればよい。
【００２８】この実施例では応力吸収球は球状している
が、熱応力を吸収でき、かつ拡散接合できるものであれ
ばいかなる形状でもよい。
【００２９】この実施例では、電極７，１１間に介在さ
せた材料を球形としたが、これ以外の形状でも機能が満
たされれば何ら問題はない。
【００３０】この実施例では応力吸収球は高分子球とＰ
ｂ−Ｓｎ共晶ハンダからなるが、電極と拡散接合し、か
つ熱応力を吸収できれば１つの材料でもよい。
【００３１】
【発明の効果】以上説明したようにこの発明によれば、
フェイスダウンボンディングによって接続されている接
続部を有する半導体装置であっても、熱応力によって接
続部の接続が不良となったりすることはない。また、接
続部の電気抵抗を下げることができる。
【図面の簡単な説明】
【図１】この発明に従った半導体装置の一実施例の断面
図である。
【図２】この発明に従った半導体装置の一実施例に使わ
れる応力吸収球の断面図である。
【図３】従来の半導体装置の一例の断面図である。
【図４】従来の半導体装置の他の例の断面図である。
【図５】従来の半導体装置の他の例に使われる応力吸収
球の斜視図である。
【符号の説明】
１ 半導体装置 ３ 半導体チップ ５ 配線基板 ７ チップ電極 １１ 基板電極 １３ 応力吸収球

Claims (1)

  1. 【特許請求の範囲】 【請求項１】 フェイスダウンボンディングによって接
    続されている部品を有する半導体装置であって、 電子回路および前記電子回路と接続した電極が形成され
    た第１基板と、 配線が形成された第２基板と、 前記電極と前記配線との間に位置し、前記第１基板の線
    膨張係数と前記第２基板の線膨張係数との差が原因で生
    じる応力を吸収する応力吸収部材と、を備え、前記応力
    吸収部材は表面に導電部材を有し、 前記導電部材は前記電極および前記配線と拡散接合して
    いる半導体装置。
JP3175113A 1991-07-16 1991-07-16 半導体装置 Withdrawn JPH0521519A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP3175113A JPH0521519A (ja) 1991-07-16 1991-07-16 半導体装置
DE4223280A DE4223280A1 (de) 1991-07-16 1992-07-15 Schaltkreistraeger-baueinheit und verfahren zu deren herstellung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3175113A JPH0521519A (ja) 1991-07-16 1991-07-16 半導体装置

Publications (1)

Publication Number Publication Date
JPH0521519A true JPH0521519A (ja) 1993-01-29

Family

ID=15990503

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3175113A Withdrawn JPH0521519A (ja) 1991-07-16 1991-07-16 半導体装置

Country Status (2)

Country Link
JP (1) JPH0521519A (ja)
DE (1) DE4223280A1 (ja)

Cited By (3)

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KR100349896B1 (ko) * 1994-12-28 2002-12-26 삼성에스디아이 주식회사 집적회로칩의실장구조체및그실장방법
KR100376044B1 (ko) * 1999-05-13 2003-03-15 한오근 반도체 패키지의 솔더 및 이를 이용한 반도체 패키지
US8120188B2 (en) 2006-11-28 2012-02-21 Panasonic Corporation Electronic component mounting structure and method for manufacturing the same

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FR2722916A1 (fr) * 1994-02-22 1996-01-26 Nec Corp Element de connexion et procede de connexion mettant en oeuvre cet element
US5393697A (en) * 1994-05-06 1995-02-28 Industrial Technology Research Institute Composite bump structure and methods of fabrication
EP0827190A3 (en) * 1994-06-24 1998-09-02 Industrial Technology Research Institute Bump structure and methods for forming this structure
US5578527A (en) * 1995-06-23 1996-11-26 Industrial Technology Research Institute Connection construction and method of manufacturing the same
FR2736569B1 (fr) * 1995-07-13 1997-08-08 Thomson Csf Dispositif de connexion et procede de connexion
FI970822A (fi) * 1997-02-27 1998-08-28 Nokia Mobile Phones Ltd Menetelmä ja järjestely komponentin liittämiseksi
WO1999049536A1 (en) * 1998-03-24 1999-09-30 Raytheon Company Stacked electrical circuit having an improved interconnect and alignment system

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US4667219A (en) * 1984-04-27 1987-05-19 Trilogy Computer Development Partners, Ltd. Semiconductor chip interface
JPS61173471A (ja) * 1985-01-28 1986-08-05 シャープ株式会社 熱圧着コネクタ−
US4902857A (en) * 1988-12-27 1990-02-20 American Telephone And Telegraph Company, At&T Bell Laboratories Polymer interconnect structure
JPH0793342B2 (ja) * 1988-12-29 1995-10-09 シャープ株式会社 電極の形成方法
JPH0740496B2 (ja) * 1989-03-01 1995-05-01 シャープ株式会社 電極上への導電性粒子の配置方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100349896B1 (ko) * 1994-12-28 2002-12-26 삼성에스디아이 주식회사 집적회로칩의실장구조체및그실장방법
KR100376044B1 (ko) * 1999-05-13 2003-03-15 한오근 반도체 패키지의 솔더 및 이를 이용한 반도체 패키지
US8120188B2 (en) 2006-11-28 2012-02-21 Panasonic Corporation Electronic component mounting structure and method for manufacturing the same

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