JP7279354B2 - 半導体素子及び半導体素子の識別方法 - Google Patents
半導体素子及び半導体素子の識別方法 Download PDFInfo
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- JP7279354B2 JP7279354B2 JP2018235395A JP2018235395A JP7279354B2 JP 7279354 B2 JP7279354 B2 JP 7279354B2 JP 2018235395 A JP2018235395 A JP 2018235395A JP 2018235395 A JP2018235395 A JP 2018235395A JP 7279354 B2 JP7279354 B2 JP 7279354B2
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Description
<半導体素子>
本発明の実施形態に係る半導体素子は、図1に示すように、一対の第1外部接続電極5a及び第2外部接続電極5b、並びに中継配線5cが並ぶ方向を長手方向とする矩形形状の平面パターンを有する抵抗素子である。平面パターンとして中継配線5cは、第1外部接続電極5aと第2外部接続電極5bの間に配置されている。実施形態に係る半導体素子のチップサイズは例えば2.8mm×2.5mm程度である。図1に示すように、左側に配置した第1外部接続電極5aと右側に配置した第2外部接続電極5bとは、ほぼ互いに相似形をなしている。第1外部接続電極5aと第2外部接続電極5bは離間して並列して配置されている。例えば、一対の第1外部接続電極5a及び第2外部接続電極5bは、図1の上下方向を長手方向とする矩形の平面パターンを有し、長さは2.1mm程度、幅は1.0mm程度、間隔は0.5mm程度以上である。図1に示すように、第1抵抗層3a及び第2抵抗層3b及び中継配線5cも、図1の上下方向を長手方向とする矩形の平面パターンを有する。
また、3つの平面パターン間において、それぞれが異なる平面パターンと認識するためには、3つの平面パターンから選ばれる2つの平面パターンの基点間の距離全て(3つ)を50μmより大きく設定する必要がある。
実施形態に係る半導体素子の識別方法の一例を、図7に示したフローチャートを参照して説明する。組立ラインにおいて、図5に平面パターンを示した従来の半導体素子の組立工程が、図6に示したボンディング装置を用いて既に実施されている。この組立ラインに、従来の半導体素子とは異なる抵抗値を有する新たな半導体素子として、図1に平面パターンを示した実施形態に係る半導体素子が投入される。
上記では、従来の半導体素子とは異なる抵抗値を有する新たな半導体素子の抵抗値が1つの場合について示した。しかし、新たな半導体素子の抵抗値が2つ以上ある場合もある。1つの新たな半導体素子を他の新たな半導体素子および従来の半導体素子と識別する場合、例えば、抵抗値が3種類ある場合は、それぞれの半導体素子の対角長DLが他の半導体素子の対角長DLと50μm以上異なるように製造する。例えば、1つの新たな半導体素子の対角長DLが従来の半導体素子と100μm異なり、他の新たな半導体素子の対角長DLが従来の半導体素子と200μm異なるように製造する。以下、図8及び図9に示すフローチャートを参照して2つの識別方法の変形例について説明する。
上記のように、本発明は、抵抗素子を例示的に取り上げて記載したが、明細書の一部をなす実施形態等の論述及び図面は本発明を限定するものであると理解すべきではない。本発明の明細書や図面の開示から当業者には様々な代替実施形態、実施例及び運用技術が明らかとなろう。
2a,2b…下層絶縁膜
3a…第1抵抗層
3b…第2抵抗層
4…層間絶縁膜
5a…第1外部接続電極
5b…第2外部接続電極
5c…中継配線
6a,6b,6c,6d,6e…コンタクト領域
7a…第1保護膜
7b…第2保護膜
8a,8c,8e…第1開口部
8b,8d,8f…第2開口部
9…対向電極
10a、10b…実効接続領域
11a,11c,11e…第1交点
11b,11d,11f…第2交点
30…位置調整ユニット
31…撮像部
32…画像処理部
33…識別部
34…記憶部
40…ボンディングユニット
41…保持部
42…ヘッド部
45…入力装置
46…出力装置
Claims (9)
- チップの上面側に設けられた第1外部接続電極と、
前記第1外部接続電極から離間して、前記第1外部接続電極と並列に設けられた第2外部接続電極と、
前記第1及び第2外部接続電極を覆い、一部に前記第1及び第2外部接続電極の上面の一部をそれぞれ露出させる第1開口部及び第2開口部を有する保護膜
とを備え、前記第1及び第2開口部の平面パターンは、前記第1及び第2外部接続電極を内包する領域の中心点に関して2回回転対称で、且つ前記第1及び第2外部接続電極の間の中心線に関して非対称であり、
前記第1及び第2開口部のそれぞれの平面パターンの角部において、内側に向かう凹部が設けられることを特徴とする半導体素子。 - チップの上面側に設けられた第1外部接続電極と、
前記第1外部接続電極から離間して、前記第1外部接続電極と並列に設けられた第2外部接続電極と、
前記第1及び第2外部接続電極を覆い、一部に前記第1及び第2外部接続電極の上面の一部をそれぞれ露出させる第1開口部及び第2開口部を有する保護膜
とを備え、前記第1及び第2開口部の平面パターンは、前記第1及び第2外部接続電極を内包する領域の中心点に関して2回回転対称で、且つ前記第1及び第2外部接続電極の間の中心線に関して非対称であり、
前記第1及び第2開口部が矩形状であり、前記第1及び第2開口部のそれぞれの長手方 向において、前記第1及び第2開口部のそれぞれの端部の位置が異なり、
前記チップの一部をなす半導体基板と、
前記半導体基板上に設けられた下層絶縁膜と、
前記下層絶縁膜上に設けられた第1抵抗層と、
前記下層絶縁膜上に設けられ、前記第1抵抗層と離間して並列する第2抵抗層と、
前記第1及び第2抵抗層を被覆する層間絶縁膜と、
前記第1及び第2抵抗層にそれぞれ接続され、且つ前記半導体基板にオーミック接続される中継配線と、
前記半導体基板下に設けられた対向電極
とを更に備え、
前記第1外部接続電極が、前記第1抵抗層に接続されて前記層間絶縁膜上に配置され、
前記第2外部接続電極が、前記第2抵抗層に接続されて前記層間絶縁膜上に配置されることを特徴とする半導体素子。 - 前記チップの一部をなす半導体基板と、
前記半導体基板上に設けられた下層絶縁膜と、
前記下層絶縁膜上に設けられた第1抵抗層と、
前記下層絶縁膜上に設けられ、前記第1抵抗層と離間して並列する第2抵抗層と、
前記第1及び第2抵抗層を被覆する層間絶縁膜と、
前記第1及び第2抵抗層にそれぞれ接続され、且つ前記半導体基板にオーミック接続される中継配線と、
前記半導体基板下に設けられた対向電極
とを更に備え、
前記第1外部接続電極が、前記第1抵抗層に接続されて前記層間絶縁膜上に配置され、
前記第2外部接続電極が、前記第2抵抗層に接続されて前記層間絶縁膜上に配置される
ことを特徴とする請求項1に記載の半導体素子。 - 参照チップの上面に設けられた第1参照外部接続電極、前記参照チップの上面に、前記第1参照外部接続電極と同一形状で離間して並列に設けられた第2参照外部接続電極、前記第1及び第2参照外部接続電極の一部をそれぞれ露出させ、前記第1及び第2参照外部接続電極の間の中心線に関して対称である矩形状の第1参照開口部及び第2参照開口部を有し、前記参照チップの上面を覆う参照保護膜とを備える参照半導体素子の平面画像を取得し、前記第1及び第2参照開口部の平面パターンにおいて、前記第1及び第2開口部の対面する側の反対側に位置し、前記第1及び第2参照外部接続電極を内包する領域の中心 点に関して2回回転対称な第1参照交点及び第2参照交点の間の長さを参照対角長として登録するステップと、
対象チップの上面に設けられた第1外部接続電極、前記対象チップの上面に、前記第1外部接続電極と同形状で離間して並列に設けられた第2外部接続電極、前記第1及び第2外部接続電極の一部をそれぞれ露出させる第1開口部及び第2開口部を有し、前記対象チップの上面を覆う保護膜を備え、平面パターンにおいて、前記第1及び第2開口部は、前記第1及び第2外部接続電極を内包する領域の中心点に関して点対称であり、前記第1及び第2外部接続電極の間の中心線に関して非対称である対象半導体素子の平面画像を取得して、前記第1及び第2開口部の対面する側の反対側に位置するそれぞれの長辺が短辺と交叉する第1交点及び第2交点の間の長さを対象対角長として登録するステップと、
前記対象対角長と前記参照対角長と差が、予め登録した規定値以上であれば、適正品と判定するステップ
とを含むことを特徴とする半導体素子の識別方法。 - 特性が互いに異なる複数の半導体素子それぞれの上面に設けられた第1外部接続電極、前記複数の半導体素子それぞれの上面に、前記第1外部接続電極と同形状で離間して並列に設けられた第2外部接続電極、前記第1及び第2外部接続電極の一部をそれぞれ露出させる第1開口部及び第2開口部を有し、前記半導体素子の上面を覆う保護膜を備え、前記第1及び第2開口部の平面パターンにおいて、前記第1及び第2開口部の対面する側の反対側に位置し、前記第1及び第2外部接続電極を内包する領域の中心点に関して2回回転対称な第1交点及び第2交点の間の長さである対角長がそれぞれ異なる前記複数の半導体素子の識別方法であって、
前記複数の半導体素子それぞれについて、平面画像を取得して、前記対角長を参照対角 長として予め登録するステップと、
前記複数の半導体素子の内の1つを対象半導体素子として登録するステップと、
前記対象半導体素子の新たなチップを供給して、該チップの平面画像を取得して、前記対角長を対象対角長として登録するステップと、
前記対象半導体素子の前記参照対角長以外の前記参照対角長と前記対象対角長との差が、予め登録した規定値以上であれば、適正品と判定するステップ
とを含むことを特徴とする半導体素子の識別方法。 - 特性が互いに異なる複数の半導体素子それぞれの上面に設けられた第1外部接続電極、前記複数の半導体素子それぞれの上面に、前記第1外部接続電極と同形状で離間して並列に設けられた第2外部接続電極、前記第1及び第2外部接続電極の一部をそれぞれ露出させる第1開口部及び第2開口部を有し、前記半導体素子の上面を覆う保護膜を備え、前記第1及び第2開口部の平面パターンにおいて、前記第1及び第2開口部の対面する側の反対側に位置し、前記第1及び第2外部接続電極を内包する領域の中心点に関して2回回転対称な第1交点及び第2交点の間の長さである対角長がそれぞれ異なる前記複数の半導体素子の識別方法であって、
前記複数の半導体素子それぞれについて、平面画像を取得して、前記対角長を参照対角 長として予め登録するステップと、
前記複数の半導体素子の内の1つを対象半導体素子として登録するステップと、
前記対象半導体素子の新たなチップを供給して、該チップの平面画像を取得して、前記対角長を対象対角長として登録するステップと、 前記対象対角長と前記対象半導体素子の前記参照対角長との差が、予め登録した規定値未満であれば、適正品と判定するステップ
とを含むことを特徴とする半導体素子の識別方法。 - 前記第1及び第2開口部が矩形状であり、前記第1及び第2開口部のそれぞれの長手方 向において、前記第1及び第2開口部のそれぞれの端部の位置が異なることを特徴とする請求項4~6のいずれか1項に記載の半導体素子の識別方法。
- 前記第1及び第2交点のそれぞれが、平面パターンにおいて、前記第1及び第2開口部のそれぞれの角部が内部に向かって凹部となる位置に設けられることを特徴とする請求項4~6のいずれか1項に記載の半導体素子の識別方法。
- 前記規定値が50μmであることを特徴とする請求項4~8のいずれか1項に記載の半導体素子の識別方法。
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