JP7273279B2 - ガリウム窒化物又は他の窒化物ベースの半導体デバイスの裏側応力補償 - Google Patents
ガリウム窒化物又は他の窒化物ベースの半導体デバイスの裏側応力補償 Download PDFInfo
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- JP7273279B2 JP7273279B2 JP2021111294A JP2021111294A JP7273279B2 JP 7273279 B2 JP7273279 B2 JP 7273279B2 JP 2021111294 A JP2021111294 A JP 2021111294A JP 2021111294 A JP2021111294 A JP 2021111294A JP 7273279 B2 JP7273279 B2 JP 7273279B2
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- 239000004065 semiconductor Substances 0.000 title claims description 44
- 229910002601 GaN Inorganic materials 0.000 title claims description 14
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title description 8
- 150000004767 nitrides Chemical class 0.000 title description 4
- 239000000758 substrate Substances 0.000 claims description 64
- 230000035882 stress Effects 0.000 claims description 57
- 238000000034 method Methods 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 21
- 230000008646 thermal stress Effects 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 17
- 229910052710 silicon Inorganic materials 0.000 description 17
- 239000010703 silicon Substances 0.000 description 17
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 11
- 230000004888 barrier function Effects 0.000 description 7
- 230000006911 nucleation Effects 0.000 description 6
- 238000010899 nucleation Methods 0.000 description 6
- 238000013459 approach Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 230000032798 delamination Effects 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- -1 aluminum nitrides Chemical class 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000013080 microcrystalline material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
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- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
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- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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Description
Claims (4)
- 方法であって、
半導体基板の第1の側の上に応力補償層を形成することであって、
前記半導体基板の第1の側の上に非結晶又は微結晶のIII族窒化物材料を形成することと、
後続する前記半導体基板の第2の側の上への1つ又はそれ以上の層の形成の間に前記非結晶又は微結晶のIII族窒化物材料を結晶化することと、
を含む、前記応力補償層を形成することと、
前記半導体基板の第2の側の上にIII族窒化物層を形成することであって、異なるガリウム濃度を有する第1及び第2のアルミニウムガリウム窒化物層を含む熱応力管理層を形成することを含む、前記III族窒化物層を形成することと、
を含み、
前記III族窒化物層により前記半導体基板上につくられる応力が、前記応力補償層により前記半導体基板上につくられる応力によって少なくとも部分的に低減される、方法。 - 請求項1に記載の方法であって、
前記非結晶又は微結晶のIII族窒化物材料を結晶化することが、後続する前記III族窒化物層の形成の間に前記非結晶又は微結晶のIII族窒化物材料を結晶化することを含む、方法。 - 請求項1に記載の方法であって、
前記非結晶又は微結晶のIII族窒化物材料を結晶化することが、アニールプロセスの間に前記非結晶又は微結晶のIII族窒化物材料を結晶化することを含む、方法。 - 請求項1に記載の方法であって、
前記非結晶又は微結晶のIII族窒化物材料が前記半導体基板上に応力を全くつくらないか又はつくる応力の量が小さく、
前記結晶化されたIII族窒化物材料が前記半導体基板上に一層大きな応力をつくる、方法。
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US28406909P | 2009-12-11 | 2009-12-11 | |
US61/284,069 | 2009-12-11 | ||
JP2018121536A JP6923859B2 (ja) | 2009-12-11 | 2018-06-27 | ガリウム窒化物又は他の窒化物ベースの半導体デバイスの裏側応力補償 |
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JP2018121536A Active JP6923859B2 (ja) | 2009-12-11 | 2018-06-27 | ガリウム窒化物又は他の窒化物ベースの半導体デバイスの裏側応力補償 |
JP2021111294A Active JP7273279B2 (ja) | 2009-12-11 | 2021-07-05 | ガリウム窒化物又は他の窒化物ベースの半導体デバイスの裏側応力補償 |
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JP2018121536A Active JP6923859B2 (ja) | 2009-12-11 | 2018-06-27 | ガリウム窒化物又は他の窒化物ベースの半導体デバイスの裏側応力補償 |
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US (2) | US8785305B2 (ja) |
JP (3) | JP2013513944A (ja) |
CN (1) | CN102549716B (ja) |
TW (1) | TW201131618A (ja) |
WO (1) | WO2011071717A2 (ja) |
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JP6923859B2 (ja) | 2021-08-25 |
TW201131618A (en) | 2011-09-16 |
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CN102549716B (zh) | 2016-08-03 |
WO2011071717A2 (en) | 2011-06-16 |
JP2013513944A (ja) | 2013-04-22 |
CN102549716A (zh) | 2012-07-04 |
JP2018190988A (ja) | 2018-11-29 |
US8785305B2 (en) | 2014-07-22 |
US20140295651A1 (en) | 2014-10-02 |
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US9111753B2 (en) | 2015-08-18 |
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