JP2013201397A - 半導体装置の製造方法、半導体装置及び半導体結晶成長用基板 - Google Patents
半導体装置の製造方法、半導体装置及び半導体結晶成長用基板 Download PDFInfo
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- JP2013201397A JP2013201397A JP2012070383A JP2012070383A JP2013201397A JP 2013201397 A JP2013201397 A JP 2013201397A JP 2012070383 A JP2012070383 A JP 2012070383A JP 2012070383 A JP2012070383 A JP 2012070383A JP 2013201397 A JP2013201397 A JP 2013201397A
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- 239000000758 substrate Substances 0.000 title claims abstract description 118
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Abstract
【解決手段】基板の裏面を研削する研削工程と、前記研削工程の後、前記基板の表面に窒化物半導体層をエピタキシャル成長させる窒化物半導体層形成工程と、を有し、前記形成される窒化物半導体層には、圧縮応力が生じていることを特徴とする半導体装置の製造方法により上記課題を解決する。
【選択図】 図5
Description
ところで、Si等の基板10の表面に、MOCVDにより窒化物半導体層20をエピタキシャル成長させた場合においては、図1に示されるように、窒化物半導体層20に圧縮応力が生じる場合と引張応力が生じる場合とがある。このように、窒化物半導体層20に生じる圧縮応力または引張応力は、MOCVDにおける成膜条件に依存して生じるものであり、このような窒化物半導体層20に圧縮応力または引張応力が生じることにより、基板10に反りが発生する。
次に、本実施の形態における半導体装置の製造方法について図5に基づき説明する。
次に、第2の実施の形態について説明する。本実施の形態は、半導体デバイス、電源装置及び高周波増幅器である。
(付記1)
基板の裏面を研削する研削工程と、
前記研削工程の後、前記基板の表面に窒化物半導体層をエピタキシャル成長させる窒化物半導体層形成工程と、
を有し、
前記形成される窒化物半導体層には、圧縮応力が生じていることを特徴とする半導体装置の製造方法。
(付記2)
前記基板は、シリコン基板、サファイア基板、SiC基板であることを特徴とする付記1に記載の半導体装置の製造方法。
(付記3)
前記基板は、シリコン(111)面基板であることを特徴とする付記1に記載の半導体装置の製造方法。
(付記4)
前記研削工程により、前記基板の表面が凹状となるものであることを特徴とする付記1から3のいずれかに記載の半導体装置の製造方法。
(付記5)
前記研削工程は、前記基板の裏面を2μm以上研削するものであることを特徴とする付記1から4のいずれかに記載の半導体装置の製造方法。
(付記6)
前記研削工程は、スクライブ装置により、基板の裏面を研削することにより行なわれるものであることを特徴とする付記1から5のいずれかに記載の半導体装置の製造方法。
(付記7)
前記窒化物半導体層は、MOCVDにより形成されるものであることを特徴とする付記1から6のいずれかに記載の半導体装置の製造方法。
(付記8)
前記窒化物半導体層は、エピタキシャル成長により形成されるものであることを特徴とする付記1から7のいずれかに記載の半導体装置の製造方法。
(付記9)
前記窒化物半導体層は、バッファ層、電子走行層、電子供給層が順次積層形成されているものであることを特徴とする付記1から8のいずれかに記載の半導体装置の製造方法。
(付記10)
前記バッファ層は、第1のバッファ層と第2のバッファ層を有しており、前記基板上に、前記第1のバッファ層、前記第2のバッファ層の順に形成されるものであって、
前記第1のバッファ層は、AlNを含む材料により形成されており、
前記第2のバッファ層は、AlGaNを含む材料により形成されているものであることを特徴とする付記9に記載の半導体装置の製造方法。
(付記11)
前記電子走行層は、GaNを含む材料により形成されているものであることを特徴とする付記9または10に記載の半導体装置の製造方法。
(付記12)
前記電子供給層は、AlGaNを含む材料により形成されているものであることを特徴とする9から11のいずれかに記載の半導体装置の製造方法。
(付記13)
前記窒化物半導体層形成工程の後、前記電子供給層の上に、ゲート電極、ソース電極及びドレイン電極を形成する電極形成工程を有するものであることを特徴とする付記1から12のいずれかに記載の半導体装置の製造方法。
(付記14)
シリコン、サファイア、SiCのいずれかにより形成された基板と、
前記基板の裏面に研削により形成された破砕層と、
前記基板の表面の上に窒化物半導体により形成されたバッファ層と、
前記バッファ層の上に窒化物半導体により形成された電子走行層と、
前記電子走行層の上に窒化物半導体により形成された電子供給層と、
前記電子供給層の上に形成されたゲート電極、ソース電極及びドレイン電極と、
を有するものであることを特徴とする半導体装置。
(付記15)
前記バッファ層、前記電子走行層及び前記電子供給層により形成される窒化物半導体層には、圧縮応力が生じていることを特徴とする付記14に記載の半導体装置。
(付記16)
前記半導体装置は、HEMTであることを特徴とする14または15に記載の半導体装置。
(付記17)
シリコン、サファイア、SiCのいずれかにより形成されている半導体結晶成長用基板において、
裏面には研削により破砕層が形成されており、
表面の形状は凹状となっており、
前記表面上に、窒化物半導体層をエピタキシャル成長させるものであることを特徴とする半導体結晶成長用基板。
(付記18)
付記14から16のいずれかに記載の半導体装置を有することを特徴とする電源装置。
(付記19)
付記14から16のいずれかに記載の半導体装置を有することを特徴とする増幅器。
11 破砕層
20 窒化物半導体層
21 第1のバッファ層
22 第2のバッファ層
23 電子走行層
23a 2DEG
24 電子供給層
31 ゲート電極
32 ソース電極
33 ドレイン電極
Claims (9)
- 基板の裏面を研削する研削工程と、
前記研削工程の後、前記基板の表面に窒化物半導体層をエピタキシャル成長させる窒化物半導体層形成工程と、
を有し、
前記形成される窒化物半導体層には、圧縮応力が生じていることを特徴とする半導体装置の製造方法。 - 前記基板は、シリコン基板、サファイア基板、SiC基板であることを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記研削工程により、前記基板の表面が凹状となるものであることを特徴とする請求項1または2に記載の半導体装置の製造方法。
- 前記窒化物半導体層は、MOCVDにより形成されるものであることを特徴とする請求項1から3のいずれかに記載の半導体装置の製造方法。
- 前記窒化物半導体層は、バッファ層、電子走行層、電子供給層が順次積層形成されているものであることを特徴とする請求項1から4のいずれかに記載の半導体装置の製造方法。
- 前記窒化物半導体層形成工程の後、前記電子供給層の上に、ゲート電極、ソース電極及びドレイン電極を形成する電極形成工程を有するものであることを特徴とする請求項1から5のいずれかに記載の半導体装置の製造方法。
- シリコン、サファイア、SiCのいずれかにより形成された基板と、
前記基板の裏面に研削により形成された破砕層と、
前記基板の表面の上に窒化物半導体により形成されたバッファ層と、
前記バッファ層の上に窒化物半導体により形成された電子走行層と、
前記電子走行層の上に窒化物半導体により形成された電子供給層と、
前記電子供給層の上に形成されたゲート電極、ソース電極及びドレイン電極と、
を有するものであることを特徴とする半導体装置。 - 前記バッファ層、前記電子走行層及び前記電子供給層により形成される窒化物半導体層には、圧縮応力が生じていることを特徴とする請求項7に記載の半導体装置。
- シリコン、サファイア、SiCのいずれかにより形成されている半導体結晶成長用基板において、
裏面には研削により破砕層が形成されており、
表面の形状は凹状となっており、
前記表面上に、窒化物半導体層をエピタキシャル成長させるものであることを特徴とする半導体結晶成長用基板。
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WO2019188901A1 (ja) * | 2018-03-30 | 2019-10-03 | 株式会社フジミインコーポレーテッド | 半導体基板の製造方法および研磨用組成物セット等のセット |
JPWO2019188901A1 (ja) * | 2018-03-30 | 2021-04-22 | 株式会社フジミインコーポレーテッド | 半導体基板の製造方法および研磨用組成物セット等のセット |
JP7421470B2 (ja) | 2018-03-30 | 2024-01-24 | 株式会社フジミインコーポレーテッド | 半導体基板の製造方法および研磨用組成物セット等のセット |
JP2020031093A (ja) * | 2018-08-21 | 2020-02-27 | 富士ゼロックス株式会社 | 半導体基板の製造方法 |
JP7200537B2 (ja) | 2018-08-21 | 2023-01-10 | 富士フイルムビジネスイノベーション株式会社 | 半導体基板の製造方法 |
CN117476743A (zh) * | 2023-10-27 | 2024-01-30 | 中环领先半导体材料有限公司 | 一种氮化镓外延片及其制备方法 |
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KR101371933B1 (ko) | 2014-03-07 |
US20130248932A1 (en) | 2013-09-26 |
US9136344B2 (en) | 2015-09-15 |
TWI518746B (zh) | 2016-01-21 |
CN103367112A (zh) | 2013-10-23 |
TW201340175A (zh) | 2013-10-01 |
CN103367112B (zh) | 2017-03-01 |
KR20130108968A (ko) | 2013-10-07 |
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