JP7243094B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP7243094B2 JP7243094B2 JP2018170108A JP2018170108A JP7243094B2 JP 7243094 B2 JP7243094 B2 JP 7243094B2 JP 2018170108 A JP2018170108 A JP 2018170108A JP 2018170108 A JP2018170108 A JP 2018170108A JP 7243094 B2 JP7243094 B2 JP 7243094B2
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Description
本発明にかかる半導体装置は、シリコンよりもバンドギャップが広い半導体(以下、ワイドバンドギャップ半導体とする)を用いて構成される。ここでは、ワイドバンドギャップ半導体として例えば炭化珪素(SiC)を用いた半導体装置(炭化珪素半導体装置)の構造を例に説明する。
次に、実施の形態にかかる半導体装置の製造方法について説明する。図2~図15は、実施の形態にかかる炭化珪素半導体装置の製造途中の状態を示す断面図である。まず、図2に示すように、n+型ドレイン領域となるn+型炭化珪素基板2を用意する。次に、n+型炭化珪素基板2のおもて面に、上述したn-型ドリフト層1をエピタキシャル成長させる。例えば、1200V耐圧クラスの場合、n-型ドリフト層1を形成するためのエピタキシャル成長の条件を、n-型ドリフト層1の不純物濃度が5×1015/cm3~1×1016/cm3とし、形成する厚さ(深さ)が8~12μm程度となるように設定してもよい。
2 n+型炭化珪素基板
3 第1p+型領域
4 第2p+型領域
15 n型領域
15a 下側n型領域
15b 上側n型領域
16 p型ベース層
17 n+型ソース領域
18 p+型領域
19 ゲート絶縁膜
20 ゲート電極
21 層間絶縁膜
22 ソース電極
25 酸化膜
31 トレンチゲート
32 トレンチSBD
33 金属膜
33a オーミック電極
35 金属膜
Claims (6)
- 第1導電型の半導体基板と、
前記半導体基板のおもて面に設けられた、前記半導体基板よりも不純物濃度の低い第1導電型の第1半導体層と、
前記第1半導体層の内部に選択的に設けられた、第2導電型の第1半導体領域と、
前記第1半導体層の、前記半導体基板側に対して反対側の表面に選択的に設けられた、第2導電型の第2半導体領域と、
前記第1半導体層の、前記半導体基板側に対して反対側に設けられた第2導電型の第2半導体層と、
前記第2導電型の第2半導体層の内部に選択的に設けられた、前記半導体基板よりも不純物濃度の高い第1導電型の第3半導体領域と、
前記第1導電型の第3半導体領域および前記第2導電型の第2半導体層を貫通して前記第1半導体層に達し、底面が前記第1半導体領域と接する第1トレンチおよび第2トレンチと、
前記第1トレンチの内部にゲート絶縁膜を介して設けられたゲート電極と、
前記第2トレンチの内部に設けられ、ソース電極に接続されたショットキー電極と、
を備え、
前記第2トレンチの側部に、前記第2導電型の第2半導体層よりも不純物濃度の高い第2導電型の第3半導体領域を設け、
前記第1トレンチの側部と他方の側部は、前記第1トレンチの形成方向に沿って前記第1導電型の第3半導体領域が連続的に設けられ、
前記第2トレンチを中心に一方の側部と他方の側部は、前記第2トレンチの形成方向に沿って前記第2導電型の第3半導体領域と前記第1導電型の第3半導体領域とが交互または間欠的に設けられることを特徴とする半導体装置。 - 前記第2導電型の第3半導体領域は、
前記ソース電極と前記第2導電型の第2半導体層の間に設けたことを特徴とする請求項1に記載の半導体装置。 - 前記第2導電型の第3半導体領域は、
前記第1導電型の第3半導体領域に接して設けたことを特徴とする請求項1または2に記載の半導体装置。 - 前記第2導電型の第3半導体領域を、
前記第2導電型の第2半導体層に設けたことを特徴とする請求項1または2に記載の半導体装置。 - 前記第2導電型の第3半導体領域を、
前記第2導電型の第2半導体層および前記第1導電型の第3半導体領域に設けたことを特徴とする請求項1または2に記載の半導体装置。 - 第1導電型の半導体基板と、
前記半導体基板のおもて面に設けられた、前記半導体基板よりも不純物濃度の低い第1導電型の第1半導体層と、
前記第1半導体層の内部に選択的に設けられた、第2導電型の第1半導体領域と、
前記第1半導体層の、前記半導体基板側に対して反対側の表面に選択的に設けられた、第2導電型の第2半導体領域と、
前記第1半導体層の、前記半導体基板側に対して反対側に設けられた第2導電型の第2半導体層と、
前記第2導電型の第2半導体層の内部に選択的に設けられた、前記半導体基板よりも不純物濃度の高い第1導電型の第3半導体領域と、
前記第1導電型の第3半導体領域および前記第2導電型の第2半導体層を貫通して前記第1半導体層に達し、底面が前記第1半導体領域と接する第1トレンチおよび第2トレンチと、
前記第1トレンチの内部にゲート絶縁膜を介して設けられたゲート電極と、
前記第2トレンチの内部に設けられ、ソース電極に接続されたショットキー電極と、
を備え、
前記第2トレンチの側部に、前記第2導電型の第2半導体層よりも不純物濃度の高い第2導電型の第3半導体領域を設け、
前記第2導電型の第3半導体領域は、
前記第2トレンチを中心に一方の側部と他方の側部に、前記第2トレンチの形成方向に沿って連続、交互または間欠的に、かつ、前記第1半導体領域と前記第2導電型の第2半導体層を繋げる位置に設けたことを特徴とする半導体装置。
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