JP7240221B2 - パワー半導体装置 - Google Patents
パワー半導体装置 Download PDFInfo
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- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5385—Assembly of a plurality of insulating substrates
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- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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Description
本実施形態1に係るパワー半導体装置100を図1から10を用いて説明する。
本発明に係る実施形態2を図11及び図12を用いて説明する。
本発明に係る第3の実施形態を図13及び図14を用いて説明する。
信号中継導体703を用いることにより、正極センス端子204U、負極センス端子205U、高電位側端子201、及び低電位側端子202の端子の高さを全て揃えることができる。正極センス端子204Lと、負極センス端子205Lと、交流出力端子203の端子の高さを全て揃えることができる。信号中継導体703を用いることによって、上下アームの形状を同一にしながら、ワイヤボンディング工程を短縮することができる。したがって、生産性が向上する。
図15は、実施形態4に係る、図1に示されたパワー半導体装置100の一点鎖線A-A’を通る断面を矢印方向から見た断面図である。実施形態4は、実施形態1と信号中継導体701を除いて同等の接続を有する。
500…パワー半導体素子、501…低電位側電極、502…高電位側電極、503…正極センス電極、504…負極センス電極、505…第1パワー半導体素子、506…第2パワー半導体素子、601…ワイヤボンディング、602…半田材、701…信号中継導体、702…非積層部、703…信号中継導体、704…固定用配線、705…信号中継ワイヤ、801…交流出力側基板、802…直流入力側基板、U…上アーム、L…下アーム
Claims (4)
- 第1パワー半導体素子を有する第1サブモジュールと、
第2パワー半導体素子を有する第2サブモジュールと、
正極側導体部及び負極側導体部と、
前記第1サブモジュールを挟んで前記負極側導体部と対向する負極側対向部及び前記第2サブモジュールを挟んで前記正極側導体部と対向する正極側対向部を形成する中間基板と、
前記第1パワー半導体素子又は前記第2パワー半導体素子を制御するため信号を伝達する複数の信号端子と、を備え、
前記第2サブモジュールは、前記第2パワー半導体素子の電極面と前記第1パワー半導体素子の電極面の向きが反転するように配置され、
前記第2サブモジュールの高さ方向であって当該第2サブモジュールの一部と前記中間基板に挟まれた空間には信号中継導体部が配置され、
前記中間基板は、前記信号中継導体部と接続されかつ前記信号端子と電気的に接続される配線を有するパワー半導体装置。 - 請求項1に記載されたパワー半導体装置であって、
前記中間基板に設けられる配線と前記信号端子を接続するボンディングワイヤを備え、
前記中間基板は、前記第1サブモジュールと前記第2サブモジュールを挟む第1中間基板と第2中間基板とにより構成され、
前記第2パワー半導体素子の電極面の直角方向から見た場合、
前記第1中間基板は、前記第2中間基板とは重ならない非積層部を有し、
前記配線とボンディングワイヤとの接続部が、前記非積層部に設けられるパワー半導体装置。 - 請求項1に記載されたパワー半導体装置であって、
前記信号中継導体部は、信号中継ワイヤであるパワー半導体装置。 - 第1パワー半導体素子を有する第1サブモジュールと、
第2パワー半導体素子を有する第2サブモジュールと、
正極側導体部及び負極側導体部と、
前記第1サブモジュールと前記第2サブモジュールを挟む第1中間基板と第2中間基板と、
前記第1パワー半導体素子又は前記第2パワー半導体素子を制御するため信号を伝達する複数の信号端子と、を備えるパワー半導体装置の製造方法であって、
前記第1サブモジュールと前記第2サブモジュールを、前記第2パワー半導体素子の電極面と前記第1パワー半導体素子の電極面の向きが反転するように半田材を介して前記第1中間基板に並べて配置する第1工程と、
前記第1中間基板が配置された側とは反対側であって、前記第1サブモジュールと前記第2サブモジュールに半田材を介して前記第2中間基板を、当該第2中間基板と前記第1中間基板とは重ならない非積層部を設けるように配置する第2工程と、
前記半田材を溶融して前記第1サブモジュールと前記第2サブモジュールと前記第1中間基板と前記第2中間基板を接合する第3工程と、
ボンディングワイヤを介して、前記非積層部に設けられた配線と複数の信号端子を接続する第4工程と、を備えるパワー半導体装置の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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JP2019062196A JP7240221B2 (ja) | 2019-03-28 | 2019-03-28 | パワー半導体装置 |
CN202080019736.7A CN113614917A (zh) | 2019-03-28 | 2020-01-30 | 功率半导体装置 |
DE112020000532.1T DE112020000532T5 (de) | 2019-03-28 | 2020-01-30 | Leistungshalbleitervorrichtung |
PCT/JP2020/003314 WO2020195140A1 (ja) | 2019-03-28 | 2020-01-30 | パワー半導体装置 |
US17/439,048 US11894348B2 (en) | 2019-03-28 | 2020-01-30 | Power semiconductor device |
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JP2019062196A JP7240221B2 (ja) | 2019-03-28 | 2019-03-28 | パワー半導体装置 |
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JP2020161752A JP2020161752A (ja) | 2020-10-01 |
JP7240221B2 true JP7240221B2 (ja) | 2023-03-15 |
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JP (1) | JP7240221B2 (ja) |
CN (1) | CN113614917A (ja) |
DE (1) | DE112020000532T5 (ja) |
WO (1) | WO2020195140A1 (ja) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2006066895A (ja) | 2004-07-29 | 2006-03-09 | Yamaha Motor Co Ltd | パワーモジュールおよびこれを用いた電動輸送機器 |
JP2013115167A (ja) | 2011-11-28 | 2013-06-10 | Toyota Motor Corp | 半導体装置 |
WO2017168992A1 (ja) | 2016-03-30 | 2017-10-05 | 日立オートモティブシステムズ株式会社 | 半導体装置 |
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US20060022355A1 (en) | 2004-07-29 | 2006-02-02 | Takayuki Murai | Power module and electric transportation apparatus incorporating the same |
JP5953152B2 (ja) | 2012-07-20 | 2016-07-20 | 日立オートモティブシステムズ株式会社 | パワー半導体モジュール及びそれを用いた電力変換装置 |
JP5975180B2 (ja) * | 2013-10-03 | 2016-08-23 | 富士電機株式会社 | 半導体モジュール |
JP2017183430A (ja) | 2016-03-29 | 2017-10-05 | アイシン・エィ・ダブリュ株式会社 | スイッチング素子ユニット |
KR101786343B1 (ko) * | 2016-05-04 | 2017-10-18 | 현대자동차주식회사 | 양면냉각형 파워모듈 |
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- 2020-01-30 CN CN202080019736.7A patent/CN113614917A/zh active Pending
- 2020-01-30 WO PCT/JP2020/003314 patent/WO2020195140A1/ja active Application Filing
- 2020-01-30 DE DE112020000532.1T patent/DE112020000532T5/de active Pending
- 2020-01-30 US US17/439,048 patent/US11894348B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2006066895A (ja) | 2004-07-29 | 2006-03-09 | Yamaha Motor Co Ltd | パワーモジュールおよびこれを用いた電動輸送機器 |
JP2013115167A (ja) | 2011-11-28 | 2013-06-10 | Toyota Motor Corp | 半導体装置 |
WO2017168992A1 (ja) | 2016-03-30 | 2017-10-05 | 日立オートモティブシステムズ株式会社 | 半導体装置 |
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Publication number | Publication date |
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DE112020000532T5 (de) | 2021-10-07 |
JP2020161752A (ja) | 2020-10-01 |
WO2020195140A1 (ja) | 2020-10-01 |
US20220157788A1 (en) | 2022-05-19 |
CN113614917A (zh) | 2021-11-05 |
US11894348B2 (en) | 2024-02-06 |
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