JP7221860B2 - インダクタ構造体およびインダクタ構造体を形成する方法 - Google Patents
インダクタ構造体およびインダクタ構造体を形成する方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 32
- 239000000696 magnetic material Substances 0.000 claims description 29
- 238000000151 deposition Methods 0.000 claims description 26
- 239000003989 dielectric material Substances 0.000 claims description 22
- 235000012239 silicon dioxide Nutrition 0.000 claims description 16
- 239000000377 silicon dioxide Substances 0.000 claims description 16
- 239000011810 insulating material Substances 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 13
- 238000005137 deposition process Methods 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 10
- -1 CoZrTi Inorganic materials 0.000 claims description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910003321 CoFe Inorganic materials 0.000 claims description 3
- 229910019236 CoFeB Inorganic materials 0.000 claims description 3
- 229910019586 CoZrTa Inorganic materials 0.000 claims description 3
- 229910002555 FeNi Inorganic materials 0.000 claims description 3
- 229910005435 FeTaN Inorganic materials 0.000 claims description 3
- 239000000395 magnesium oxide Substances 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 2
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 2
- 238000009713 electroplating Methods 0.000 claims description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 2
- 229910052810 boron oxide Inorganic materials 0.000 claims 1
- 229910001936 tantalum oxide Inorganic materials 0.000 claims 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 102
- 239000000463 material Substances 0.000 description 18
- 238000002955 isolation Methods 0.000 description 10
- 230000008021 deposition Effects 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000010949 copper Substances 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000001186 cumulative effect Effects 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000003853 Pinholing Methods 0.000 description 1
- 229910020286 SiOxNy Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000011143 downstream manufacturing Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/10—Inductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
- H01L28/26—Resistors with an active material comprising an organic conducting material, e.g. conducting polymers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
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- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Integrated Circuits (AREA)
- Coils Or Transformers For Communication (AREA)
- Thin Magnetic Films (AREA)
Description
Claims (20)
- インダクタ構造体であって、
磁気材料と多層絶縁材料との交互層を備える積層膜スタックを備え、前記多層絶縁材料は近接する磁気材料層の中間にあって、少なくとも1つの追加の絶縁層に隣接する第1の絶縁層を備え、前記第1の絶縁層および前記少なくとも1つの追加の絶縁層は、異なる誘電体材料を備える、または異なる堆積プロセスによって形成される、あるいはその両方である、
インダクタ構造体。 - 複数の金属線をさらに備え、
前記積層膜スタックは、磁気材料および前記金属線を封入する多層絶縁材料の交互層を備える、
請求項1に記載のインダクタ構造体。 - 前記第1の絶縁層または前記少なくとも1つの追加の絶縁層あるいはその両方は、1つまたは複数のピンホールを備え、前記第1の絶縁層と前記少なくとも1つの追加の絶縁層との間で不連続である、請求項1に記載のインダクタ構造体。
- 前記磁気材料は、CoFe、CoFeB、CoZrTi、CoZrTa、CoZr、CoZrNb、CoZrMo、CoTi、CoNb、CoHf、CoW、FeCoN、FeCoAlN、CoP、FeCoP、CoPW、CoBW、CoPBW、FeTaN、FeCoBSi、FeNi、CoFeHfO、CoFeSiO、CoZrO、CoFeAlO、およびそれらの組合せからなるグループから選択される、請求項1に記載のインダクタ構造体。
- 前記誘電体材料は、二酸化ケイ素、熱酸化物Si、酸窒化ケイ素、酸化マグネシウム、酸化アルミニウム、酸化ホウ素、酸化タンタル、酸化チタン、窒化ケイ素、およびそれらの組合せからなるグループから選択される、請求項1に記載のインダクタ構造体。
- 前記多層絶縁材料は、前記磁気材料層の厚みの半分の厚みを有する、請求項1に記載のインダクタ構造体。
- 前記多層絶縁材料は、前記インダクタ構造体内の他の磁気材料層から各磁気材料層を電気的に分離するのに有効な厚みを有する、請求項1に記載のインダクタ構造体。
- 第1の絶縁層は二酸化ケイ素を含み、少なくとも1つの追加の絶縁層に隣接する前記絶縁層は窒化ケイ素を含む、請求項1に記載のインダクタ構造体。
- 前記多層絶縁材料は、窒化ケイ素層を覆う第1の二酸化ケイ素層を含み、前記窒化ケイ素層は第2の二酸化ケイ素層を覆う、請求項1に記載のインダクタ構造体。
- 前記多層絶縁材料は、二酸化ケイ素層を覆う第1の窒化ケイ素層を含み、前記二酸化ケイ素層は第2の窒化ケイ素層を覆う、請求項1に記載のインダクタ構造体。
- 前記インダクタ構造体は閉ヨーク・インダクタであり、金属ワイヤに巻き付いている、請求項1に記載のインダクタ構造体。
- 前記インダクタ構造体はソレノイド・インダクタであり、金属ワイヤが前記インダクタ構造体に巻き付いている、請求項1に記載のインダクタ構造体。
- インダクタ構造体を形成する方法であって、
磁気材料と多層絶縁材料との交互層を備える積層膜スタックを堆積させることを含み、前記多層絶縁材料は近接する磁気材料層の中間にあって、少なくとも1つの追加の絶縁層に隣接する第1の絶縁層を備え、前記第1の絶縁層および前記少なくとも1つの追加の絶縁層は、異なる誘電体材料を備える、または異なる堆積プロセスによって形成される、あるいはその両方である、
インダクタ構造体を形成する方法。 - 前記第1の絶縁層および前記隣接する少なくとも1つの追加の絶縁層を堆積させることは、CVD、PECVD、またはそれらの組合せを備える、請求項13に記載の方法。
- 前記第1の絶縁層および前記隣接する少なくとも1つの追加の絶縁層を堆積させることは、300℃未満の温度においてである、請求項13に記載の方法。
- 前記磁気材料を堆積させることは電気めっきプロセスを含む、請求項13に記載の方法。
- 前記磁気材料層は、CoFe、CoFeB、CoZrTi、CoZrTa、CoZr、CoZrNb、CoZrMo、CoTi、CoNb、CoHf、CoW、FeCoN、FeCoAlN、CoP、FeCoP、CoPW、CoBW、CoPBW、FeTaN、FeCoBSi、FeNi、CoFeHfO、CoFeSiO、CoZrO、CoFeAlO、またはそれらの組合せを含む、請求項13に記載の方法。
- 前記第1の絶縁層または前記少なくとも1つの追加の絶縁層あるいはその両方は、1つまたは複数のピンホールを備え、前記第1の絶縁層と前記少なくとも1つの追加の絶縁層との間で不連続である、請求項13に記載の方法。
- 前記絶縁層は、二酸化ケイ素、窒化ケイ素、酸窒化ケイ素、およびそれらの組合せからなるグループから選択される、請求項13に記載の方法。
- 第1の絶縁層は二酸化ケイ素を含み、少なくとも1つの追加の絶縁層に隣接する前記絶縁層は窒化ケイ素を含む、請求項13に記載の方法。
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US15/209,803 US9859357B1 (en) | 2016-07-14 | 2016-07-14 | Magnetic inductor stacks with multilayer isolation layers |
US15/209,803 | 2016-07-14 | ||
PCT/IB2017/053495 WO2018011643A1 (en) | 2016-07-14 | 2017-06-13 | Magnetic inductor stacks with multilayer isolation layers |
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JP2019527476A JP2019527476A (ja) | 2019-09-26 |
JP7221860B2 true JP7221860B2 (ja) | 2023-02-14 |
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US (2) | US9859357B1 (ja) |
JP (1) | JP7221860B2 (ja) |
CN (1) | CN109416969B (ja) |
DE (1) | DE112017003523T5 (ja) |
GB (1) | GB2566664B (ja) |
WO (1) | WO2018011643A1 (ja) |
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CN117275897A (zh) * | 2023-10-26 | 2023-12-22 | 淮安顺络文盛电子有限公司 | 一种电感间隙控制方法及电感装置 |
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CN109416969A (zh) | 2019-03-01 |
US9859357B1 (en) | 2018-01-02 |
GB2566664A8 (en) | 2019-03-27 |
CN109416969B (zh) | 2021-06-11 |
GB2566664B (en) | 2020-03-11 |
WO2018011643A1 (en) | 2018-01-18 |
US10177213B2 (en) | 2019-01-08 |
JP2019527476A (ja) | 2019-09-26 |
US20180047805A1 (en) | 2018-02-15 |
GB201901265D0 (en) | 2019-03-20 |
GB2566664A (en) | 2019-03-20 |
DE112017003523T5 (de) | 2019-04-18 |
US20180019295A1 (en) | 2018-01-18 |
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