JP7192968B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP7192968B2 JP7192968B2 JP2021511799A JP2021511799A JP7192968B2 JP 7192968 B2 JP7192968 B2 JP 7192968B2 JP 2021511799 A JP2021511799 A JP 2021511799A JP 2021511799 A JP2021511799 A JP 2021511799A JP 7192968 B2 JP7192968 B2 JP 7192968B2
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- 239000004065 semiconductor Substances 0.000 title claims description 75
- 239000000758 substrate Substances 0.000 claims description 39
- 239000010410 layer Substances 0.000 description 73
- 238000011084 recovery Methods 0.000 description 14
- 238000010586 diagram Methods 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 230000001965 increasing effect Effects 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 238000002076 thermal analysis method Methods 0.000 description 4
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 230000032823 cell division Effects 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
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- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
図1は、実施の形態1に係る半導体装置を示す上面図である。この半導体装置は、同じ半導体基板1にIGBT2、ダイオード3、ウェル領域4、及び終端領域5が設けられたRC-IGBTである。IGBT2がチップ中央付近に設けられ、ダイオード3はIGBT2よりも半導体基板1の外側に設けられている。ウェル領域4は、ダイオード3より半導体基板1の外側に設けられている。ウェル領域4の更に外側に終端領域5が設けられている。
図11は、実施の形態2に係る半導体装置のダイオードを示す断面図である。ダイオード3のトレンチゲート6のサイドにn+型エミッタ層10が設けられている。なお、ウェル領域4のトレンチゲート6のサイドにもn+型エミッタ層10を設けてもよい。
図12は、実施の形態3に係る半導体装置を示す断面図である。断面箇所は実施の形態1の図6と同じである。半導体基板1の第2主面側のn+型カソード層20とp+型層23の境界は、第1主面側のp型アノード層19とp+型ウェル層21の境界よりも半導体基板1の中心側に配置されている。
図13は、実施の形態4に係る半導体装置を示す断面図である。断面箇所は実施の形態1の図6と同じである。ダイオード3のp型アノード層19とウェル領域4のp+型ウェル層21の下方に、ヘリウム又はプロトン等の粒子線照射により結晶欠陥を局在させたライフタイムコントロール層24が設けられている。
Claims (7)
- 互いに反対側の第1主面と第2主面を有する半導体基板と、
前記半導体基板に設けられたIGBT、ダイオード、及びウェル領域とを備え、
前記IGBTは、前記半導体基板の前記第1主面に設けられたトレンチゲートを有し、
前記ダイオードは、前記半導体基板の前記第1主面に設けられたp型アノード層を有し、
前記ウェル領域は、前記半導体基板の前記第1主面に設けられ、前記p型アノード層よりも濃度が濃く、前記トレンチゲートよりも深さが深いp型ウェル層を有し、
前記トレンチゲートの終端は前記ウェル領域に設けられ、前記p型ウェル層で囲まれ、
前記ダイオードは前記IGBTよりも前記半導体基板の外側に設けられ、
前記ウェル領域は、前記ダイオードより前記半導体基板の外側に設けられ、
ゲート配線が前記ウェル領域に設けられ、
前記トレンチゲートの終端は、前記ウェル領域で前記ゲート配線に接続され、前記トレンチゲートの他の部分よりも深さが浅い引き上げ部を有することを特徴とする半導体装置。 - 前記ダイオードは前記ウェル領域に接していることを特徴とする請求項1に記載の半導体装置。
- 前記ウェル領域は、前記半導体基板の前記第2主面に設けられたp型層を有することを特徴とする請求項1又は2に記載の半導体装置。
- 前記ダイオードにおいて前記トレンチゲートのサイドにn型エミッタ層が設けられていることを特徴とする請求項1~3の何れか1項に記載の半導体装置。
- 前記ダイオードは、前記半導体基板の前記第2主面に設けられたn型カソード層を有し、
前記第2主面側の前記n型カソード層と前記p型層の境界は、前記第1主面側の前記p型アノード層と前記p型ウェル層の境界よりも前記半導体基板の中心側に配置されていることを特徴とする請求項3に記載の半導体装置。 - 前記ダイオードの前記p型アノード層と前記ウェル領域の前記p型ウェル層の下方にライフタイムコントロール層が設けられていることを特徴とする請求項1~5の何れか1項に記載の半導体装置。
- 前記半導体基板はワイドバンドギャップ半導体によって形成されていることを特徴とする請求項1~6の何れか1項に記載の半導体装置。
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PCT/JP2019/014449 WO2020202430A1 (ja) | 2019-04-01 | 2019-04-01 | 半導体装置 |
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US (1) | US11973132B2 (ja) |
JP (1) | JP7192968B2 (ja) |
CN (1) | CN113632238A (ja) |
DE (1) | DE112019007159T5 (ja) |
WO (1) | WO2020202430A1 (ja) |
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JP7395844B2 (ja) * | 2019-05-14 | 2023-12-12 | 富士電機株式会社 | 半導体装置および製造方法 |
US20220416077A1 (en) * | 2021-06-24 | 2022-12-29 | Wolfspeed, Inc. | Power semiconductor die with improved thermal performance |
WO2023189059A1 (ja) * | 2022-03-31 | 2023-10-05 | ローム株式会社 | 半導体装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2012033897A (ja) | 2010-07-01 | 2012-02-16 | Denso Corp | 半導体装置 |
JP2013026534A (ja) | 2011-07-25 | 2013-02-04 | Toyota Central R&D Labs Inc | 半導体装置 |
JP2017224685A (ja) | 2016-06-14 | 2017-12-21 | 株式会社デンソー | 半導体装置 |
JP2018186111A (ja) | 2017-04-24 | 2018-11-22 | 三菱電機株式会社 | 半導体装置及び半導体装置の製造方法 |
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JP3410286B2 (ja) * | 1996-04-01 | 2003-05-26 | 三菱電機株式会社 | 絶縁ゲート型半導体装置 |
JP3906504B2 (ja) * | 1996-11-27 | 2007-04-18 | 株式会社デンソー | 絶縁分離型半導体装置 |
JP2011134951A (ja) * | 2009-12-25 | 2011-07-07 | Toyota Motor Corp | 半導体装置 |
CN202796960U (zh) * | 2012-07-12 | 2013-03-13 | 宁波比亚迪半导体有限公司 | 一种具有内置二极管的igbt结构 |
KR101422953B1 (ko) * | 2012-12-14 | 2014-08-13 | 삼성전기주식회사 | 전력 반도체 소자 및 그 제조 방법 |
DE112013007576B4 (de) | 2013-11-05 | 2022-02-03 | Denso Corporation | Halbleitereinrichtung |
JP6459791B2 (ja) * | 2014-07-14 | 2019-01-30 | 株式会社デンソー | 半導体装置およびその製造方法 |
JP6197773B2 (ja) * | 2014-09-29 | 2017-09-20 | トヨタ自動車株式会社 | 半導体装置 |
JP6801324B2 (ja) | 2016-09-15 | 2020-12-16 | 富士電機株式会社 | 半導体装置 |
WO2018105744A1 (ja) * | 2016-12-08 | 2018-06-14 | 富士電機株式会社 | 半導体装置 |
JP7013668B2 (ja) * | 2017-04-06 | 2022-02-01 | 富士電機株式会社 | 半導体装置 |
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- 2019-04-01 US US17/311,544 patent/US11973132B2/en active Active
- 2019-04-01 CN CN201980094734.1A patent/CN113632238A/zh active Pending
- 2019-04-01 WO PCT/JP2019/014449 patent/WO2020202430A1/ja active Application Filing
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JP2012033897A (ja) | 2010-07-01 | 2012-02-16 | Denso Corp | 半導体装置 |
JP2013026534A (ja) | 2011-07-25 | 2013-02-04 | Toyota Central R&D Labs Inc | 半導体装置 |
JP2017224685A (ja) | 2016-06-14 | 2017-12-21 | 株式会社デンソー | 半導体装置 |
JP2018186111A (ja) | 2017-04-24 | 2018-11-22 | 三菱電機株式会社 | 半導体装置及び半導体装置の製造方法 |
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DE112019007159T5 (de) | 2021-12-16 |
US11973132B2 (en) | 2024-04-30 |
WO2020202430A1 (ja) | 2020-10-08 |
CN113632238A (zh) | 2021-11-09 |
JPWO2020202430A1 (ja) | 2021-12-16 |
US20220109062A1 (en) | 2022-04-07 |
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