JP7146018B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP7146018B2 JP7146018B2 JP2021083736A JP2021083736A JP7146018B2 JP 7146018 B2 JP7146018 B2 JP 7146018B2 JP 2021083736 A JP2021083736 A JP 2021083736A JP 2021083736 A JP2021083736 A JP 2021083736A JP 7146018 B2 JP7146018 B2 JP 7146018B2
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- 238000007254 oxidation reaction Methods 0.000 claims description 50
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 23
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 23
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
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- 229910052799 carbon Inorganic materials 0.000 description 3
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- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
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- 229920005591 polysilicon Polymers 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
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- 229910052757 nitrogen Inorganic materials 0.000 description 2
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- 230000001681 protective effect Effects 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
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- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
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- 239000010409 thin film Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Description
本実施の形態の半導体装置について、図1および図2を用いて説明する。図1は、本実施の形態の半導体装置の平面図および断面図である。なお、図1の断面図は、後述する半導体装置の製造方法における、ゲート絶縁膜GI1を形成した状態を示している。平面図では、デバイス領域DRにハッチングを付している。図2は、図1のA-A線に沿う断面図である。
変形例1は、上記実施の形態1の変形例である。図14は、変形例1の半導体装置の製造方法を示す断面図である。
変形例2は、上記実施の形態1の変形例である。図15は、変形例2の半導体装置の製造方法を示す断面図である。
実施の形態2は、上記実施の形態1の変形例である。図16~図18は、実施の形態2の半導体装置の製造方法を示す断面図である。図16および図17は、上記実施の形態1の図8および図9に対応し、図18は、図2に対応している。
変形例3は、上記実施の形態2の変形例である。図19は、変形例3の半導体装置の製造方法を示す断面図である。変形例3は、上記変形例1に対応している。
変形例4は、上記実施の形態2の変形例である。図20は、変形例4の半導体装置の製造方法を示す断面図である。変形例4は、上記変形例2に対応している。
変形例5は、上記実施の形態1または2の変形例である。図21~図24は、変形例5の半導体装置の断面図である。図21~図24は、上記実施の形態1または2の終端領域TRにおけるエッジターミネーション領域ET、リサーフ層RS1およびRS2の位置関係の変形例である。以下、上記実施の形態1と比べて説明する。
変形例6は、上記実施の形態1または2の変形例である。図25および図26は、変形例6の半導体装置の断面図である。図25および図26は、上記実施の形態1または2の終端領域TRの変形例である。以下、上記実施の形態1と比べて説明する。
[付記1]
主面と、裏面とを有し、前記主面に、デバイス領域と、前記デバイス領域の周囲を囲む終端領域と、前記終端領域に対して、前記デバイス領域の反対側に位置する辺と、を有し、炭化珪素からなる第1導電型の半導体基板と、
前記デバイス領域において、前記半導体基板の前記主面に形成され、前記第1導電型とは反対の導電型である第2導電型の第1半導体領域と、
前記第1半導体領域の内部に形成された前記第1導電型の第2半導体領域と、
前記半導体基板と前記第2半導体領域との間であって、前記第1半導体領域上にゲート絶縁膜を介して形成されたゲート電極と、
前記終端領域において、前記半導体基板の前記主面に形成され、前記第2導電型を有し、平面視にて、前記デバイス領域の周囲を囲む環状の第3半導体領域と、
前記終端領域において、前記第3半導体領域と前記辺との間に形成され、前記第2導電型を有し、平面視にて、前記第3半導体領域の周囲を囲む環状の第4半導体領域と、
前記半導体基板の前記主面上に形成され、前記第1半導体領域、前記第2半導体領域および前記第3半導体領域に接続された第1電極と、
前記半導体基板の前記裏面上に形成された第2電極と、
を有し、
前記主面において、前記半導体基板は、前記第3半導体領域に接し、前記第3半導体領域の周囲を囲む環状の第5半導体領域を含み、
前記第4半導体領域は、前記第5半導体領域の内部に形成され、
前記第3半導体領域と前記辺との間において、前記第4半導体領域および前記第5半導体領域は、前記主面上に形成された耐酸化性絶縁膜で覆われている、半導体装置。
BR ボディ領域
CH コンタクトホール
DR デバイス領域
EP エピタキシャル層
ET エッジターミネーション領域
GE ゲート電極
GI1,GI2 ゲート絶縁膜
GR1,GR2,GR3 ガードグリング
M1、M2 電極
MK1,MK2,MK3,MK4,MK5 マスク膜
MK6,MK7,MK8 マスク膜
Q1 MOSFET
RS1,RS2 リサーフ層
S 辺(側面)
SR ソース領域
SB SiC基板
SUB 半導体基板
TR 終端領域
ZM1R、ZM6R 耐酸化性絶縁膜
ZM2R、ZM5R 絶縁膜
ZM1,ZM2,ZM3,ZM4 絶縁膜
Claims (8)
- 主面と、裏面とを有し、前記主面に、デバイス領域と、前記デバイス領域の周囲を囲む終端領域と、前記終端領域に対して、前記デバイス領域の反対側に位置する辺と、を有し、炭化珪素からなる第1導電型の半導体基板と、
前記デバイス領域において、前記半導体基板の前記主面に形成され、前記第1導電型とは反対の導電型である第2導電型の第1半導体領域と、
前記第1半導体領域の内部に形成された前記第1導電型の第2半導体領域と、
前記半導体基板と前記第2半導体領域との間であって、前記第1半導体領域上にゲート絶縁膜を介して形成されたゲート電極と、
前記終端領域において、前記半導体基板の前記主面に形成され、前記第2導電型を有し、平面視にて、前記デバイス領域の周囲を囲む環状の第3半導体領域と、
前記終端領域において、前記第3半導体領域と前記辺との間に形成され、前記第2導電型を有し、平面視にて、前記第3半導体領域の周囲を囲む環状の第4半導体領域と、
前記半導体基板の前記主面上に形成され、前記第1半導体領域、前記第2半導体領域および前記第3半導体領域に接続された第1電極と、
前記半導体基板の前記裏面上に形成された第2電極と、
を有し、
前記主面において、前記半導体基板は、前記第3半導体領域に接し、前記第3半導体領域の周囲を囲む環状の第5半導体領域を含み、
前記第4半導体領域は、前記第5半導体領域の内部に形成され、
前記第3半導体領域と前記辺との間において、前記第4半導体領域および前記第5半導体領域は、前記主面上に形成された耐酸化性絶縁膜で覆われており、
前記ゲート絶縁膜は、熱酸化シリコン膜とCVD法による酸化シリコン膜との積層膜からなり、
前記耐酸化性絶縁膜は、前記CVD法による酸化シリコン膜で覆われている、半導体装置。 - 請求項1記載の半導体装置において、
前記耐酸化性絶縁膜は、窒化シリコン膜または酸窒化シリコン膜からなる、半導体装置。 - 請求項1記載の半導体装置において、
前記第3半導体領域の内部に形成され、前記第2導電型を有し、平面視にて、前記デバイス領域の周囲を囲む環状の第6半導体領域をさらに有し、
前記第6半導体領域は、前記ゲート絶縁膜で覆われた第1領域と、前記耐酸化性絶縁膜で覆われた第2領域と、を有する、半導体装置。 - 請求項3記載の半導体装置において、
前記第1領域の表面は、前記第2領域の表面よりも、前記半導体基板の前記裏面に近い、半導体装置。 - 請求項1記載の半導体装置において、
前記第3半導体領域は、平面視にて、前記デバイス領域の周囲を囲む環状の第7半導体領域および第8半導体領域を有し、
前記第7半導体領域は、前記第8半導体領域よりも前記デバイス領域側に位置し、
前記第7半導体領域および前記第8半導体領域は、前記第2導電型を有し、前記第8半導体領域の不純物濃度は、前記第7半導体領域の不純物濃度よりも低い、半導体装置。 - 請求項5記載の半導体装置において、
前記第8半導体領域は、前記第7半導体領域と重なる領域を有する、半導体装置。 - 請求項3記載の半導体装置において、
前記第4半導体領域は、複数形成されており、
複数の前記第4半導体領域は、前記第6半導体領域よりも前記デバイス領域から離れており、
複数の前記第4半導体領域の不純物濃度は、前記第3半導体領域の不純物濃度よりも高い、半導体装置。 - 請求項7記載の半導体装置において、
さらに、
前記第5半導体領域の内部に形成され、前記デバイス領域の周囲を囲む環状の複数の第9半導体領域、
を有し、
前記複数の第9半導体領域は、前記第2導電型を有し、前記第9半導体領域の不純物濃度は、前記第6半導体領域の不純物濃度よりも低い、半導体装置。
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JP6284840B2 (ja) | 2014-06-26 | 2018-02-28 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法および半導体装置 |
JP2016181591A (ja) * | 2015-03-24 | 2016-10-13 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
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JP6289738B2 (ja) * | 2015-03-26 | 2018-03-07 | 三菱電機株式会社 | 半導体装置の製造方法 |
US20180001913A1 (en) * | 2016-06-30 | 2018-01-04 | Trinityrail Maintenance Services, Inc. | Tank car top platform assembly closure plate |
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- 2016-12-09 JP JP2016239283A patent/JP6887244B2/ja active Active
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2017
- 2017-10-23 US US15/790,195 patent/US10468496B2/en active Active
- 2017-11-06 EP EP17200145.5A patent/EP3336880B1/en active Active
- 2017-12-04 TW TW106142316A patent/TWI742210B/zh active
- 2017-12-06 CN CN201711276325.2A patent/CN108231895B/zh active Active
- 2017-12-06 CN CN202311371926.7A patent/CN117410338A/zh active Pending
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JP2008103529A (ja) | 2006-10-19 | 2008-05-01 | Toyota Central R&D Labs Inc | 半導体装置 |
JP2009289904A (ja) | 2008-05-28 | 2009-12-10 | Toshiba Corp | 半導体装置 |
JP2013098316A (ja) | 2011-10-31 | 2013-05-20 | Mitsubishi Electric Corp | 炭化珪素半導体装置 |
JP2016086002A (ja) | 2014-10-23 | 2016-05-19 | サンケン電気株式会社 | 半導体装置及びその製造方法 |
JP2016157761A (ja) | 2015-02-24 | 2016-09-01 | 株式会社東芝 | 半導体装置及びその製造方法 |
WO2016166808A1 (ja) | 2015-04-14 | 2016-10-20 | 三菱電機株式会社 | 半導体装置 |
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EP3336880A1 (en) | 2018-06-20 |
TWI742210B (zh) | 2021-10-11 |
CN117410338A (zh) | 2024-01-16 |
JP2018098288A (ja) | 2018-06-21 |
EP3336880B1 (en) | 2023-05-24 |
US20200020781A1 (en) | 2020-01-16 |
JP6887244B2 (ja) | 2021-06-16 |
US10468496B2 (en) | 2019-11-05 |
CN108231895B (zh) | 2023-11-17 |
TW201834033A (zh) | 2018-09-16 |
CN108231895A (zh) | 2018-06-29 |
US20180166554A1 (en) | 2018-06-14 |
JP2021119639A (ja) | 2021-08-12 |
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