JP7101370B2 - 面発光レーザ及び面発光レーザの製造方法 - Google Patents
面発光レーザ及び面発光レーザの製造方法 Download PDFInfo
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Description
(a)基板上に第1導電型の第1のクラッド層を成長する工程と、
(b)前記第1のクラッド層上に前記第1導電型の第1のガイド層を成長する工程と、
(c)前記第1のガイド層に、エッチングにより前記第1のガイド層に平行な面内において2次元的な周期性を有する空孔を形成する工程と、
(d)III族原料及び窒素源を含むガスを供給して、前記空孔の開口上部に所定の面方位のファセットを有する凹部が形成されるように成長を行って、前記空孔の開口部を塞ぐ工程と、
(e)前記空孔の前記開口部を塞いだ後、マストランスポートによって前記凹部を平坦化する工程と、を有し、
前記工程(e)の実行後における前記空孔の側面のうち少なくとも1つが{10-10}ファセットであることを特徴としている。
基板上に形成された第1導電型の第1のクラッド層と、
前記第1のクラッド層上に形成され、層に平行な面内において2次元的な周期性を有して配された空孔を内部に有する前記第1導電型の第1のガイド層と、
前記第1のガイド層上に形成された発光層と、
前記発光層上に形成された、前記第1導電型と反対導電型の第2導電型の第2のガイド層と、
前記第2のガイド層上に形成された前記第2導電型の第2のクラッド層と、を有し、
前記空孔の側面のうち少なくとも1つが{10-10}ファセットであることを特徴としている。
[フォトニック結晶面発光レーザの共振効果]
フォトニック結晶部を備えた面発光レーザ(以下、単にフォトニック結晶面発光レーザという場合がある。)において共振効果を得るためには、フォトニック結晶部での回折効果が高いことが望まれる。
(1)発振波長をλ、フォトニック結晶部の実効的な屈折率をneffとしたとき、フォトニック結晶部における2次元的な屈折率周期Pが、正方格子2次元フォトニック結晶の場合はP=mλ/neff(mは自然数)を、三角格子2次元フォトニック結晶の場合はP=mλ×2/(31/2×neff)(mは自然数)を満たす、
(2)フォトニック結晶部における母材に対する異屈折率領域の占める割合(FF:フィリングファクタ)が十分に大きい、
(3)フォトニック結晶面発光レーザにおける光強度分布のうち、フォトニック結晶部に分布する光強度の割合(ΓPC:閉じ込め係数)が十分に大きい、
ことが望まれる。
[クラッド層及びガイド層の成長]
半導体構造層11の作製工程について以下に詳細に説明する。結晶成長方法としてMOVPE(Metalorganic Vapor Phase Epitaxy)法を用い、常圧(大気圧)成長により成長基板11上に半導体構造層11を成長した。
n-ガイド層14を成長後の基板、すなわちガイド層付きの基板(以下、ガイド層基板という。)をMOVPE装置から取り出し、n-ガイド層14に微細な空孔(ホール)を形成した。図3及び図4を参照して、空孔の形成について以下に詳細に説明する。なお、図3は当該空孔CHの形成工程を模式的に示す断面図である。また、図4は、空孔CHの形成後の工程におけるガイド層基板の表面及び断面の走査型電子顕微鏡(SEM:Scanning Electron Microscope)の像を示している。なお、図4の上段にはガイド層基板の表面SEM像が示され、下段に表面SEM像中に示した破線(白色)に沿った断面SEM像が示されている。
n-ガイド層14に2次元的な周期性を持つ空孔CHを形成したガイド層基板のSiNx膜SNをフッ酸(HF)を用いて除去し(図3、(vi))、脱脂洗浄を行って清浄表面を得、再度MOVPE装置内に導入した。
空孔CHが{10-11}ファセットで閉塞された後、III族材料ガスの供給を停止し、V族材料ガス(NH3)を供給しながら100℃/minの昇温速度で1200℃まで昇温し、温度を保持した。1200℃で1分保持(熱処理)した後の空孔の表面は図4に示すように変化した(図4、(b))。すなわち、n-ガイド層14の表面に形成されていた{10-11}ファセットは消失し、表面は平坦な(0001)面となった。すなわち、マストランスポートによって表面が平坦化され、n-ガイド層14の表面を(0001)面に変化させた。
続いて活性層15として、5層の量子井戸層を含む多重量子井戸(MQW) 層を成長した。多重量子井戸のバリア層及び井戸層はそれぞれGaN及びInGaNで構成され、それぞれの層厚は、5.0nm、3.5nmであった。また、本実施例における活性層からのPL発光の中心波長は405nmであった。
上記実施例1においては、{10-11}ファセットを成長させることで、空孔CHを閉塞した。閉塞された空孔CHの上面には(000-1)面が現れ、側面には{10-10}面が現れる。
表面平坦化においては、埋め込まれた空孔CHの上部の{10-11}ファセットを、マストランスポートによって平坦化させ、ガイド層の表面を(0001)面に変化させる。
比較例1として、実施例1の平坦化工程(マストランスポート)と同様な工程のみによって空孔CHの埋め込みを行った。すなわち、III族原料の供給を停止し、窒素源を供給しながら昇温・加熱する工程のみによって空孔CHの埋め込みを行った。
12:基板
13:n-クラッド層
14:n-ガイド層
14P:フォトニック結晶層
14C:空孔
15:活性層
16:ガイド層
18:p-クラッド層
Claims (6)
- MOVPE法によりIII族窒化物半導体からなる面発光レーザを製造する製造方法であって、
(a)基板上に第1導電型の第1のクラッド層を成長する工程と、
(b)前記第1のクラッド層上に前記第1導電型の第1のガイド層を成長する工程と、
(c)前記第1のガイド層に、エッチングにより前記第1のガイド層に平行な面内において2次元的な周期性を有する空孔を形成する工程と、
(d)III族原料及び窒素源を含むガスを供給して、前記空孔の開口上部に所定の面方位のファセットを有する凹部が形成されるように成長を行って、前記空孔の開口部を塞ぐ工程と、
(e)前記空孔の前記開口部を塞いだ後、マストランスポートによって前記凹部を平坦化する工程と、を有し、
前記平坦化する工程の実行後における前記空孔の側面のうち少なくとも1つが{10-10}ファセットである面発光レーザの製造方法。 - マストランスポートによって前記凹部を平坦化する工程(e)の後に、前記第1のガイド層上に活性層を成長する工程(f)を含み、
前記第1のガイド層の成長表面は(0001)面であり、前記工程(e)の後における前記空孔の前記活性層側の面が(000-1)面である請求項1に記載の製造方法。 - 前記工程(e)の後における前記空孔の前記第1のクラッド層側の面が{1-102}ファセットを含む請求項1又は2に記載の製造方法。
- 前記工程(d)において、前記所定の面方位のファセットは{10-11}ファセットを含む請求項1ないし3のいずれか1に記載の製造方法。
- 前記工程(d)における成長温度は900℃以上、1100℃以下である請求項1ないし4のいずれか1に記載の製造方法。
- 前記工程(e)における前記マストランスポートの温度は1100℃以上である請求項1ないし5のいずれか1に記載の製造方法。
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