JP7020311B2 - 基板処理装置及び基板処理方法 - Google Patents

基板処理装置及び基板処理方法 Download PDF

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Publication number
JP7020311B2
JP7020311B2 JP2018113686A JP2018113686A JP7020311B2 JP 7020311 B2 JP7020311 B2 JP 7020311B2 JP 2018113686 A JP2018113686 A JP 2018113686A JP 2018113686 A JP2018113686 A JP 2018113686A JP 7020311 B2 JP7020311 B2 JP 7020311B2
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Prior art keywords
substrate
voltage
electrostatic adsorption
adsorption electrode
electrode
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JP2018113686A
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English (en)
Japanese (ja)
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JP2019216215A (ja
Inventor
康史 宇津木
利洋 東条
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2018113686A priority Critical patent/JP7020311B2/ja
Priority to CN201910500004.9A priority patent/CN110610892B/zh
Priority to KR1020190069728A priority patent/KR102263417B1/ko
Publication of JP2019216215A publication Critical patent/JP2019216215A/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H01L21/67265—Position monitoring, e.g. misposition detection or presence detection of substrates stored in a container, a magazine, a carrier, a boat or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
JP2018113686A 2018-06-14 2018-06-14 基板処理装置及び基板処理方法 Active JP7020311B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2018113686A JP7020311B2 (ja) 2018-06-14 2018-06-14 基板処理装置及び基板処理方法
CN201910500004.9A CN110610892B (zh) 2018-06-14 2019-06-11 基片处理装置和基片处理方法
KR1020190069728A KR102263417B1 (ko) 2018-06-14 2019-06-13 기판 처리 장치 및 기판 처리 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018113686A JP7020311B2 (ja) 2018-06-14 2018-06-14 基板処理装置及び基板処理方法

Publications (2)

Publication Number Publication Date
JP2019216215A JP2019216215A (ja) 2019-12-19
JP7020311B2 true JP7020311B2 (ja) 2022-02-16

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JP (1) JP7020311B2 (zh)
KR (1) KR102263417B1 (zh)
CN (1) CN110610892B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021091168A1 (ko) 2019-11-07 2021-05-14 주식회사 엘지화학 Lno 함량이 상이한 이중층 구조의 합제층을 포함하는 양극 및 이를 포함하는 이차전지

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004327875A (ja) 2003-04-28 2004-11-18 Hitachi High-Technologies Corp 静電吸着方法，静電吸着装置、及びそれを用いた半導体製造装置
JP2016174081A (ja) 2015-03-17 2016-09-29 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP6204325B2 (ja) 2014-11-07 2017-09-27 京セラドキュメントソリューションズ株式会社 画像走査ユニットの支持構造、画像形成装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2965176B2 (ja) * 1991-07-26 1999-10-18 日本電信電話株式会社 静電チャックの過渡特性評価方法
JPH06204325A (ja) * 1992-12-28 1994-07-22 Hitachi Ltd 静電吸着装置およびその吸着方法
CN1178392A (zh) * 1996-09-19 1998-04-08 株式会社日立制作所 静电吸盘和应用了静电吸盘的样品处理方法及装置
JP2005116821A (ja) * 2003-10-08 2005-04-28 Tokyo Electron Ltd プラズマ処理装置、プラズマ処理方法及びプラズマ生成方法
JP4421874B2 (ja) * 2003-10-31 2010-02-24 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
KR20060022151A (ko) * 2004-09-06 2006-03-09 삼성전자주식회사 정전 흡착 장치
KR101153118B1 (ko) * 2005-10-12 2012-06-07 파나소닉 주식회사 플라즈마 처리장치 및 플라즈마 처리방법
JP5315942B2 (ja) * 2008-05-21 2013-10-16 東京エレクトロン株式会社 載置台機構、これを用いたプラズマ処理装置及び静電チャックへの電圧印加方法
JP6401901B2 (ja) * 2013-11-13 2018-10-10 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP2016225439A (ja) * 2015-05-29 2016-12-28 東京エレクトロン株式会社 プラズマ処理装置及び基板剥離検知方法
JP2017147278A (ja) * 2016-02-15 2017-08-24 東京エレクトロン株式会社 基板載置台および基板処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004327875A (ja) 2003-04-28 2004-11-18 Hitachi High-Technologies Corp 静電吸着方法，静電吸着装置、及びそれを用いた半導体製造装置
JP6204325B2 (ja) 2014-11-07 2017-09-27 京セラドキュメントソリューションズ株式会社 画像走査ユニットの支持構造、画像形成装置
JP2016174081A (ja) 2015-03-17 2016-09-29 東京エレクトロン株式会社 基板処理方法及び基板処理装置

Also Published As

Publication number Publication date
CN110610892A (zh) 2019-12-24
KR20190141609A (ko) 2019-12-24
KR102263417B1 (ko) 2021-06-09
CN110610892B (zh) 2023-01-31
JP2019216215A (ja) 2019-12-19

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