JP6978335B2 - 電子部品内蔵基板及びその製造方法と電子部品装置 - Google Patents
電子部品内蔵基板及びその製造方法と電子部品装置 Download PDFInfo
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Description
図4〜図17は実施形態の電子部品内蔵基板の製造方法を説明するための図、図18は実施形態の電子部品内蔵基板を示す図、図19及び図20は実施形態の電子部品装置を説明するための図である。
Claims (12)
- 第1絶縁層と、
前記第1絶縁層に形成された四角形のキャビティと、
前記キャビティに配置された電子部品と
を有し、
前記キャビティは、
隣り合う2つの内壁面と、
前記2つの内壁面からそれぞれ内側に突出する突起部と、
前記2つの内壁面の反対側に配置され、内側に向かって下方に傾斜する隣り合う2つの傾斜内壁面と
を有し、
前記電子部品が前記キャビティの突起部に当接していることを特徴とする電子部品内蔵基板。 - 前記電子部品の横領域に配置され、前記第1絶縁層で被覆された配線層と、
前記第1絶縁層及び前記電子部品の上に形成された第2絶縁層と
前記第2絶縁層に形成され、前記電子部品の接続端子に到達する第1ビアホールと、
前記第2絶縁層及び前記第1絶縁層に形成され、前記配線層に到達する第2ビアホールと、
前記第2絶縁層の上に形成され、前記第1ビアホールを介して前記電子部品の接続端子に接続される第1パッドと、
前記第2絶縁層の上に形成され、前記第2ビアホールを介して前記配線層に接続される第2パッドと
を有することを特徴とする請求項1に記載の電子部品内蔵基板。 - 前記突起部は、半円柱状で形成され、かつ、前記キャビティの内壁面と同じ高さで形成されることを特徴とする請求項1又は2に記載の電子部品内蔵基板。
- 前記突起部は、前記2つの内壁面にそれぞれ2箇所に分離されて形成されていることを特徴とする請求項1乃至3のいずれか一項に記載の電子部品内蔵基板。
- 前記傾斜内壁面には前記突起部が形成されていないことを特徴とする請求項1乃至4のいずれか一項に記載の電子部品内蔵基板。
- 第1絶縁層と、
前記第1絶縁層に形成された四角形のキャビティと、
前記キャビティに配置された第1電子部品と、
前記第1電子部品の横領域に配置され、前記第1絶縁層で被覆された配線層と、
前記第1絶縁層及び前記第1電子部品の上に形成された第2絶縁層と
前記第2絶縁層に形成され、前記第1電子部品の接続端子に到達する第1ビアホールと、
前記第2絶縁層及び前記第1絶縁層に形成され、前記配線層に到達する第2ビアホールと、
前記第2絶縁層の上に形成され、前記第1ビアホールを介して前記第1電子部品の接続端子に接続される第1パッドと、
前記第2絶縁層の上に形成され、前記第2ビアホールを介して前記配線層に接続される第2パッドと
を有し、
前記キャビティは、
隣り合う2つの内壁面と、
前記2つの内壁面からそれぞれ内側に突出する突起部と、
前記2つの内壁面の反対側に配置され、内側に向かって下方に傾斜する隣り合う2つの傾斜内壁面と
を有し、
前記第1電子部品が前記キャビティの突起部に当接している電子部品内蔵基板と、
前記電子部品内蔵基板の第1パッド及び第2パッドに接続された第2電子部品と
を有することを特徴とする電子部品装置。 - 前記傾斜内壁面には前記突起部が形成されていないことを特徴とする請求項6に記載の電子部品装置。
- 第1絶縁層を備えた配線部材を用意する工程と、
前記第1絶縁層に四角形のキャビティを形成する工程であって、
前記キャビティは、
隣り合う2つの内壁面と、
前記2つの内壁面からそれぞれ内側に突出する突起部と、
前記2つの内壁面の反対側に配置され、内側に向かって下方に傾斜する隣り合う2つの傾斜内壁面とを有して形成され、
前記キャビティを形成する工程の後に、
前記キャビティに電子部品を配置する工程と、
前記配線部材を傾けることにより、前記電子部品を前記キャビティの突起部に当接させる工程とを有することを特徴とする電子部品内蔵基板の製造方法。 - 前記配線部材を用意する工程において、
前記配線部材は、前記キャビティが配置される部分の横領域に、前記第1絶縁層で被覆された配線層を備え、
前記電子部品を前記キャビティの突起部に当接させる工程の後に、
前記第1絶縁層及び前記電子部品の上に、第2絶縁層を形成する工程と、
前記第2絶縁層に、前記電子部品の接続端子に到達する第1ビアホールを形成すると共に、前記第2絶縁層及び前記第1絶縁層に、前記配線層に到達する第2ビアホールを形成する工程と、
前記第2絶縁層の上に、前記第1ビアホールを介して前記電子部品の接続端子に接続される第1パッドと、前記第2ビアホールを介して前記配線層に接続される第2パッドとを形成する工程と
を有することを特徴とする請求項8に記載の電子部品内蔵基板の製造方法。 - 前記第2絶縁層を形成する工程において、
前記キャビティの傾斜内壁面側から突起部側に向けて樹脂フィルムを貼り付けることを特徴とする請求項9に記載の電子部品内蔵基板の製造方法。 - 前記キャビティの傾斜内壁面は、前記第1絶縁層をレーザで加工することによって形成され、
前記レーザの照射を前記第1絶縁層の表面に対してデフォーカスした状態で行うことにより、前記傾斜内壁面が得られることを特徴とする請求項8乃至10のいずれか一項に記載の電子部品内蔵基板の製造方法。 - 前記キャビティを形成する工程において、
前記突起部は、半円柱状で形成され、かつ、前記キャビティの内壁面と同じ高さで形成されることを特徴とする請求項8乃至11のいずれか一項に記載の電子部品内蔵基板の製造方法。
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